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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N06S2L-H5

Name: IPB80N06S2L-H5
Brand: Infineon Technologies
SKU: IPB80N06S2L-H5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N06S2L-H5

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N06S2L-H5.pdf

Description:: MOSFET N-CH 55V 80A TO263-3

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Product details

Overview

IPB80N06S2L-H5 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET optimized for automotive and industrial high-current switching. It delivers 80 A continuous drain current at T_C = 25 °C, 55 V V_DS, ultra-low 4.7 mΩ R_DS(on) (SMD version, V_GS = 10 V), and is AEC-Q101 qualified for under-hood applications such as DC-DC converter primary-side switches.

For engineers reviewing the IPB80N06S2L-H5 datasheet, IPB80N06S2L-H5 pinout, IPB80N06S2L-H5 application, or IPB80N06S2L-H5 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, 175 °C maximum junction temperature, 100% avalanche energy rating (700 mJ), and TO263-3 package thermal resistance (R_thJC = 0.5 K/W).

Technical Context

This OptiMOS® power transistor uses trench-based silicon technology to achieve low conduction loss and fast switching with controlled gate charge (Q_g = 145–190 nC, Q_gd = 53–80 nC). Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from 3.3 V/5 V microcontrollers without level-shifting.

The integrated body diode supports synchronous rectification and freewheeling in buck converters and motor drives, with verified t_rr = 76–95 ns and Q_rr = 169–210 nC at 30 V reverse bias and 100 A/µs di/dt - critical for minimizing switching losses in hard-commutated topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage for 48 V automotive and industrial bus systems
R_DS(on) max	4.7 mΩ @ V_GS = 10 V, SMD version - Enables <1 W conduction loss at 80 A DC
I_D cont.	80 A @ T_C = 25 °C - Rated for high-current power stages with external heatsinking
E_AS	700 mJ - 100% production-tested single-pulse avalanche capability for inductive load protection
T_j max	+175 °C - Supports operation in engine bay and industrial enclosures without derating
Q_g	145–190 nC - Determines gate driver power requirement and switching speed trade-off
V_GS(th)	1.2–2.0 V - Ensures reliable turn-on with standard logic-level MCU outputs

Pinout & Package

IPB80N06S2L-H5 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with isolated drain tab for PCB thermal management. The case is rated MSL1 up to 260 °C peak reflow and features green (lead-free) finish.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (low-side reference)	Connected to ground or low-side switch node; carries full load current return path
Pin 2 (Gate)	Control input	Receives logic-level PWM signal; requires <200 nF gate capacitance buffering for stable switching
Pin 3 (Drain)	Power output / high-side connection	Exposed copper tab - must be soldered to ≥6 cm² PCB copper area for R_thJA = 40 K/W thermal performance

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate driver ICs in 3.3 V/5 V control systems
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements
Ultra-low R_DS(on)	4.7 mΩ (SMD) at 10 V - reduces conduction loss by >30% vs. legacy 60 V MOSFETs in same package
100% avalanche tested	Each unit subjected to single-pulse E_AS = 700 mJ - ensures robustness against inductive kickback in motor and solenoid loads
175 °C operation	Rated junction temperature allows use in sealed enclosures without active cooling

Applications

Automotive DC-DC Converters

Industrial Motor Drives

Use Scenario: Primary-side high-side switch in 12 V → 48 V bidirectional DC-DC converters for 48 V mild hybrid vehicles.

IC Role / Device Role / Timing Role: High-current synchronous rectifier switch operating at 100–200 kHz with forced-air or conduction-cooled heatsinking.

Use Value: 4.7 mΩ R_DS(on) limits conduction loss to <3 W at 80 A, enabling >96% peak efficiency at full load.

Use Scenario: Half-bridge leg in 3-phase BLDC motor inverters for HVAC blowers and industrial pumps.

IC Role / Device Role / Timing Role: Low-side switching element with fast t_f = 22 ns and low Q_gd/Q_gs ratio for reduced shoot-through risk.

Use Value: Verified t_rr = 76–95 ns and Q_rr = 169–210 nC minimize diode recovery losses during commutation.

Server PSU Primary Switches

Renewable Energy Inverters

Use Scenario: Primary-side switch in LLC resonant converters for 48 V server power supplies.

IC Role / Device Role / Timing Role: Hard-switched MOSFET handling 80 A pulsed currents with 320 A I_D,pulse rating.

Use Value: 0.5 K/W R_thJC enables direct mounting to cold plate, supporting >500 W/in² power density.

Use Scenario: MPPT boost stage switch in solar microinverters and battery storage systems.

IC Role / Device Role / Timing Role: High-efficiency unidirectional switch operating at 50–100 kHz with 55 V blocking capability.

Use Value: 175 °C T_j,max and AEC-Q101 qualification support outdoor deployment in harsh ambient conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N06S2L-H5	TO-220-3 through-hole package; identical die, higher R_thJA (62 K/W) in free air	Better suited for prototyping and low-volume industrial controls where manual assembly is preferred	Select when board space permits larger footprint and thermal design relies on heatsink clamping rather than PCB copper area
IPB80N06S4-04	Newer OptiMOS™ 4 generation; 3.8 mΩ R_DS(on) at 10 V but higher Q_g (220 nC); not AEC-Q101 qualified	Targeted at non-automotive high-efficiency SMPS where qualification is not required	Choose only if 0.9 mΩ R_DS(on) reduction justifies 15% higher gate drive power and absence of automotive qualification

Compared with IPP80N06S2L-H5, the TO263 variant offers superior thermal performance via PCB conduction, while IPB80N06S4-04 trades qualification and gate drive simplicity for marginal conduction loss improvement - making IPB80N06S2L-H5 optimal for cost-constrained, thermally demanding automotive and industrial designs requiring proven reliability.

Availability

IPB80N06S2L-H5 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and renewable energy inverters requiring stable component supply across extended product lifecycles.

Supply support for IPB80N06S2L-H5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS® power transistor family, engineered specifically for high-current, high-efficiency switching in automotive and industrial power conversion systems where low R_DS(on), logic-level drive, and ruggedness are mandatory.

FAQ

What is the maximum gate-source voltage rating for IPB80N06S2L-H5?

The absolute maximum gate-source voltage is ±20 V, qualified at both −20 V and +20 V per datasheet Rev. 1.0. Exceeding this rating risks permanent gate oxide damage. Recommended operating range is −10 V to +15 V for reliable long-term performance under transient conditions.

Does IPB80N06S2L-H5 have an integrated body diode, and what are its key parameters?

Yes, it includes a monolithic body diode rated for 80 A continuous forward current and 320 A pulsed current. Key parameters include V_SD = 0.9–1.3 V at 80 A and 25 °C, t_rr = 76–95 ns, and Q_rr = 169–210 nC under specified test conditions (V_R = 30 V, dI/dt = 100 A/µs).

Can IPB80N06S2L-H5 be used in synchronous rectification topologies?

Yes - its low R_DS(on) (4.7 mΩ), fast switching (t_r = 23 ns, t_f = 22 ns), and well-characterized body diode make it suitable for synchronous rectification in buck, boost, and LLC converters, especially where gate drive voltage is limited to 4.5–10 V.

What is the thermal resistance from junction to case (R_thJC) and how should it be applied in layout design?

R_thJC is 0.5 K/W, measured from die junction to the drain tab surface. To achieve this value, the exposed drain pad must be soldered to ≥6 cm² of 70 µm thick copper on FR4 PCB, oriented vertically in still air - insufficient copper area increases effective R_thJC and risks thermal runaway at full load.

IPB80N06S2L-H5 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 3

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 190 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N06S2L-H5 FAQ

1.How can I place an order for IPB80N06S2L-H5 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N06S2L-H5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N06S2L-H5 reliable?

The price and inventory of IPB80N06S2L-H5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N06S2L-H5 is usually 5 days.

3.What payment methods are accepted for IPB80N06S2L-H5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N06S2L-H5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N06S2L-H5?

IPB80N06S2L-H5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N06S2L-H5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N06S2L-H5?

For technical support, including IPB80N06S2L-H5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N06S2L-H5 requirements.

6.How does Aetrix verify that IPB80N06S2L-H5 is sourced from the original manufacturer or authorized distributors?

All IPB80N06S2L-H5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N06S2L-H5 meets industry standards.

7.What is the process for return or replacement of IPB80N06S2L-H5?

All IPB80N06S2L-H5 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N06S2L-H5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N06S2L-H5 part is unused and in its original packaging.

Return procedure for IPB80N06S2L-H5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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