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Infineon Technologies IPB80N06S2LH5ATMA4

Name: IPB80N06S2LH5ATMA4
Brand: Infineon Technologies
SKU: IPB80N06S2LH5ATMA4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N06S2LH5ATMA4

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N06S2LH5ATMA4.pdf

Description:: MOSFET N-CH 55V 80A TO263-3

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Product details

Overview

IPB80N06S2LH5ATMA4 from Infineon is an N-channel logic-level enhancement-mode MOSFET optimized for automotive and industrial high-current switching. It delivers 80 A continuous drain current at T_C = 25 °C, 55 V V_DS, and ultra-low R_DS(on) of 4.7 mΩ (SMD version, V_GS = 10 V), with AEC-Q101 qualification and 175 °C operation-used in DC-DC converters, motor control inverters, and battery disconnect circuits.

For engineers reviewing the IPB80N06S2LH5ATMA4 datasheet, IPB80N06S2LH5ATMA4 pinout, IPB80N06S2LH5ATMA4 application, or IPB80N06S2LH5ATMA4 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, avalanche energy rating (700 mJ), thermal resistance (R_thJC = 0.5 K/W), diode forward voltage (V_SD = 0.9–1.3 V), and gate charge profile (Q_g = 145–190 nC).

Technical Context

This OptiMOS® power transistor employs trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from microcontrollers without level-shifting, and its 100% avalanche-tested structure supports robust unclamped inductive switching in motor drives and solenoid controls.

The device integrates a co-packaged body diode with low reverse recovery charge (Q_rr = 169–210 nC) and short t_rr (76–95 ns), reducing switching losses in synchronous rectification and half-bridge topologies. Thermal design is enabled by a low junction-to-case resistance (0.5 K/W) and MSL1-rated lead-free PG-TO263-3-2 package suitable for automated reflow up to 260 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - maximum blocking voltage for 12 V/24 V automotive and industrial bus applications
R_DS(on) max (V_GS = 10 V)	4.7 mΩ - ensures <1.5 W conduction loss at 80 A, enabling compact heatsink design
I_D continuous (T_C = 25 °C)	80 A - rated for high-current load switching without derating at board-level cooling
E_AS (single pulse)	700 mJ - supports reliable operation under unclamped inductive turn-off in motor drivers
Q_g total	145–190 nC - defines gate driver power requirement and switching speed trade-off
V_GS(th)	1.2–2.0 V - enables direct 3.3 V/5 V MCU GPIO drive without external level shifters
t_r/t_f	23 ns / 22 ns - supports >500 kHz PWM operation in high-efficiency SMPS designs

Pinout & Package

IPB80N06S2LH5ATMA4 is housed in a surface-mount PG-TO263-3-2 (D²PAK) package with exposed drain pad for thermal management. The three terminals are arranged as Drain (pins 1 & 2, tab), Source (pin 3), and Gate (pin 1, isolated lead).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab + Pin 1)	Main current path input	Electrically and thermally connected to PCB copper pour; primary heat dissipation path
Source (Pin 3)	Reference node for gate drive and current sensing	Low-inductance return path; used for shunt-based current monitoring in half-bridge legs
Gate (Pin 1, isolated)	Control electrode	Requires <20 V absolute rating; sensitive to ESD; routed away from noisy power traces

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis systems per stress test requirements
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V, compatible with standard 3.3 V/5 V digital outputs
100% avalanche tested	Guarantees single-pulse ruggedness up to 700 mJ without parameter shift or failure
Green (lead-free) package	Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 MSL1 reflow profile
Ultra-low R_DS(on)	4.7 mΩ at 10 V drive reduces I²R loss by >30% vs. legacy 60 V MOSFETs in same footprint

Applications

Automotive DC-DC Converters

Industrial Motor Drives

Use Scenario: 12 V to 48 V bidirectional buck-boost converter in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200–300 kHz PWM frequency.

Use Value: Low R_DS(on) and fast t_r/t_f minimize conduction and switching losses, improving conversion efficiency above 96%.

Use Scenario: Three-phase inverter stage driving 3 kW BLDC motors in HVAC compressors.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid bridge with active freewheeling.

Use Value: Robust body diode (Q_rr = 169–210 nC) and 175 °C rating ensure reliability under high ambient temperature and transient overload.

Battery Management Systems

Server Power Supply OR-ing

Use Scenario: Active cell balancing and main contactor replacement in EV traction battery packs.

IC Role / Device Role / Timing Role: High-current bidirectional switch controlling charge/discharge paths between modules.

Use Value: 80 A continuous rating and 700 mJ avalanche capability prevent failure during fault-induced inductive kickback.

Use Scenario: Hot-swap OR-ing FET in redundant 12 V server PSU outputs.

IC Role / Device Role / Timing Role: Low-loss pass element replacing ideal diodes in parallel power rail architectures.

Use Value: Sub-5 mΩ R_DS(on) cuts forward drop to <0.4 V at 80 A, eliminating thermal runaway risk in multi-rail configurations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N06S2LH5ATMA1	Same die, TO-220-3-1 package; higher R_thJA (62 K/W vs. 40 K/W on PCB); no exposed drain tab	Suitable for lower-power, through-hole prototyping; not recommended for >50 A continuous SMT designs	Select when manual assembly or legacy socket compatibility is required over thermal performance
IPB80N06S4-04	Newer OptiMOS™ 4 generation; R_DS(on) = 3.8 mΩ @ 10 V; Q_g = 125 nC; same PG-TO263-3-2 footprint	Enables higher-frequency operation and lower gate drive loss; requires updated layout for improved thermal via density	Choose for new designs targeting >97% efficiency or tighter thermal budgets

Compared with IPP80N06S2LH5ATMA1, IPB80N06S2LH5ATMA4 offers superior thermal performance in SMT layouts; versus IPB80N06S4-04, it trades slightly higher R_DS(on) for proven field reliability and broader gate drive margin in legacy 5 V systems.

Availability

IPB80N06S2LH5ATMA4 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and battery management systems requiring stable component supply across extended product lifecycles.

Supply support for IPB80N06S2LH5ATMA4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers.

This part belongs to the OptiMOS® 2nd-generation power MOSFET product line, engineered specifically for high-current, high-reliability switching in automotive and industrial power conversion systems.

FAQ

What is the maximum safe operating temperature for IPB80N06S2LH5ATMA4?

The device is rated for continuous operation from –55 °C to +175 °C junction temperature. Its 175 °C rating allows use in engine bay and under-hood automotive environments without derating, provided thermal design maintains T_j ≤ 175 °C using the specified R_thJC = 0.5 K/W path to heatsink or PCB copper.

Does IPB80N06S2LH5ATMA4 support 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 1.2–2.0 V and full enhancement at V_GS ≥ 4.5 V, it operates reliably with 3.3 V logic when paired with a gate driver that can source/sink sufficient peak current (≥2 A) to charge Q_g quickly, minimizing transition time losses.

Is the body diode suitable for synchronous rectification?

Yes. The integrated body diode has a typical forward voltage of 0.9–1.3 V at 80 A and reverse recovery characteristics (t_rr = 76–95 ns, Q_rr = 169–210 nC) validated for use in synchronous rectification topologies up to 300 kHz, especially when combined with adaptive gate timing control.

How does the PG-TO263-3-2 package differ from TO-220 in thermal performance?

The PG-TO263-3-2 (D²PAK) package achieves R_thJA = 40 K/W with 6 cm² PCB copper area, versus 62 K/W for TO-220 on identical conditions. This 35% improvement stems from direct thermal coupling of the exposed drain tab to the PCB, making it essential for high-current SMT applications where heatsink mounting is impractical.

IPB80N06S2LH5ATMA4 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 3

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 190 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N06S2LH5ATMA4 FAQ

1.How can I place an order for IPB80N06S2LH5ATMA4 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N06S2LH5ATMA4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N06S2LH5ATMA4 reliable?

The price and inventory of IPB80N06S2LH5ATMA4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N06S2LH5ATMA4 is usually 5 days.

3.What payment methods are accepted for IPB80N06S2LH5ATMA4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N06S2LH5ATMA4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N06S2LH5ATMA4?

IPB80N06S2LH5ATMA4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N06S2LH5ATMA4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N06S2LH5ATMA4?

For technical support, including IPB80N06S2LH5ATMA4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N06S2LH5ATMA4 requirements.

6.How does Aetrix verify that IPB80N06S2LH5ATMA4 is sourced from the original manufacturer or authorized distributors?

All IPB80N06S2LH5ATMA4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N06S2LH5ATMA4 meets industry standards.

7.What is the process for return or replacement of IPB80N06S2LH5ATMA4?

All IPB80N06S2LH5ATMA4 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N06S2LH5ATMA4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N06S2LH5ATMA4 part is unused and in its original packaging.

Return procedure for IPB80N06S2LH5ATMA4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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