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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N06S3-07

Name: IPB80N06S3-07
Brand: Infineon Technologies
SKU: IPB80N06S3-07
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N06S3-07

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N06S3-07.pdf

Description:: MOSFET N-CH 55V 80A TO263-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPB80N06S3-07 from Infineon Technologies is an N-channel enhancement-mode OptiMOS®-T2 power MOSFET in PG-TO263-3-2 package, rated for 55 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 6.5 mΩ max R_DS(on) at V_GS = 10 V. It is AEC-Q101 qualified for automotive applications, operates up to 175 °C junction temperature, and features 100% single-pulse avalanche testing with 455 mJ E_AS.

For engineers reviewing the IPB80N06S3-07 datasheet, IPB80N06S3-07 pinout, IPB80N06S3-07 application, or IPB80N06S3-07 equivalent, key selection criteria include its low R_DS(on) at high current, robust thermal resistance (R_thJC = 1.1 K/W), integrated body diode with 55 ns t_rr, and suitability for high-efficiency DC-DC converters, motor control H-bridges, and automotive load switching.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in high-current, high-temperature environments. Its gate threshold voltage (2.1–4.0 V) ensures reliable turn-on with standard 5 V or 10 V logic drivers, while the 113–170 nC total gate charge supports efficient PWM operation at frequencies up to several hundred kHz.

The device integrates a fast-recovery body diode (t_rr = 55 ns, Q_rr = 70 nC) and exhibits stable R_DS(on) over temperature (4.5 mΩ at −55 °C, 12.5 mΩ at 175 °C @ I_D = 80 A), enabling predictable performance in thermally constrained automotive and industrial power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage for 12 V/24 V automotive systems and 48 V industrial supplies
R_DS(on), max	6.5 mΩ @ V_GS = 10 V - Enables ≤520 mW conduction loss at 80 A, critical for thermal management
I_D, cont	80 A @ T_C = 25 °C - Supports high-current loads such as starter relays and HVAC blowers
E_AS	455 mJ - Withstands inductive energy spikes without failure in motor drive freewheeling paths
t_rr	55 ns - Minimizes reverse recovery loss and cross-conduction risk in synchronous rectification
R_thJC	1.1 K/W - Allows direct heatsink mounting for >100 W power dissipation with minimal ΔT
Q_g	113–170 nC - Determines gate driver strength requirement; compatible with common 2 A peak drivers

Pinout & Package

IPB80N06S3-07 uses the PG-TO263-3-2 surface-mount package (D²PAK), featuring isolated drain tab for PCB thermal relief and mechanical stability. The three terminals are arranged in standard D²PAK layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 0–10 V logic-level signal; requires <170 nC charge for full enhancement
Pin 2 (Drain)	High-side or low-side power path	Exposed copper tab - must be soldered to large PCB copper area (≥6 cm²) for thermal conduction
Pin 3 (Source)	Reference node for gate drive and current sensing	Common return for load current; used for Kelvin source connection in precision current monitoring

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive underhood use including temperature cycling, humidity, and vibration stress
100% avalanche tested	Each unit verified to withstand 455 mJ single-pulse avalanche energy without parametric shift
MSL1 rating	Compatible with lead-free reflow up to 260 °C peak, eliminating moisture sensitivity handling
RoHS-compliant green product	Meets EU Directive 2011/65/EU with no restricted substances above threshold limits
Optimized body diode	Q_rr = 70 nC and soft recovery reduce EMI and switching loss in hard-commutated topologies

Applications

Automotive Body Control Module (BCM)

48 V Mild Hybrid DC-DC Converter

Use Scenario: Switching headlamp, fog lamp, and seat heater loads in centralized vehicle power distribution units.

IC Role / Device Role / Timing Role: Low-side power switch controlling up to 80 A resistive/inductive loads with PWM dimming capability.

Use Value: 6.5 mΩ R_DS(on) reduces heat generation by >30% vs. legacy 10 mΩ devices, enabling smaller heatsinks and higher channel density.

Use Scenario: Synchronous rectification in bidirectional buck-boost converter between 12 V battery and 48 V Li-ion storage.

IC Role / Device Role / Timing Role: High-efficiency secondary-side switch operating at 200–300 kHz with zero-voltage switching assist.

Use Value: 55 ns t_rr and 70 nC Q_rr minimize dead-time loss and improve conversion efficiency to ≥97.2% at 3 kW.

Industrial Motor Drive Inverter Stage

Server PSU OR-ing FET

Use Scenario: Half-bridge leg in 3-phase BLDC driver for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: High-current, high-temperature switching element with integrated freewheeling diode.

Use Value: 175 °C max T_j and 1.1 K/W R_thJC allow sustained 74 A operation at 100 °C case temperature without derating.

Use Scenario: Hot-swap and redundancy control in 12 V server backplane power rails.

IC Role / Device Role / Timing Role: Low-R_DS(on) ideal diode replacement with fast turn-off to prevent backfeed during rail failure.

Use Value: 80 A continuous rating and 320 A pulsed capability support 2× N+1 redundant power supply configurations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N06S3-07	Same die, PG-TO220-3-1 through-hole package; R_thJA = 62 K/W (leaded), no exposed drain tab	Better suited for prototyping and lower-volume industrial controls where manual assembly is preferred	Select when board space allows TO-220 footprint and thermal design relies on clip-on heatsinks
IPB80N06S4-05	Newer OptiMOS®-T4 generation; 5.0 mΩ R_DS(on) max, 105 nC Q_g, same PG-TO263-3-2 package	Enables higher efficiency in high-frequency SMPS but requires updated gate drive tuning due to lower V_GS(th)	Choose for new designs targeting >98% efficiency at 500 kHz; not drop-in for legacy layouts with marginal gate drive margin

Compared with IPP80N06S3-07, IPB80N06S3-07 offers superior thermal performance via surface-mount thermal pad; versus IPB80N06S4-05, it trades 1.5 mΩ higher R_DS(on) for proven field reliability and wider V_GS(th) tolerance in noisy automotive environments.

Availability

IPB80N06S3-07 is available at Aetrix Electronics and suitable for automotive body electronics, 48 V mild hybrid power conversion, and industrial motor control requiring stable component supply across multi-year production cycles.

Supply support for IPB80N06S3-07 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and RF solutions, headquartered in Munich.

This device belongs to the OptiMOS®-T2 power transistor family, engineered specifically for high-current, high-temperature switching in automotive and industrial power systems where reliability under thermal and electrical stress is critical.

FAQ

What is the maximum allowable gate-source voltage for IPB80N06S3-07?

The absolute maximum V_GS is ±20 V, with qualification testing performed at −5 V and +20 V per specification. Operation beyond this range risks permanent gate oxide damage. For robust design, keep steady-state V_GS ≤ 15 V and transient overshoots ≤ 18 V using clamping circuits or RC snubbers.

Can IPB80N06S3-07 be used in synchronous rectification without external diode protection?

Yes - its integrated body diode is fully characterized with t_rr = 55 ns and Q_rr = 70 nC, and is rated for 80 A continuous forward current. However, for hard-switched topologies above 200 kHz, external Schottky clamping may further reduce EMI and improve efficiency.

How does the 1.1 K/W R_thJC translate to practical PCB layout requirements?

This value assumes direct thermal coupling from the drain tab to ≥6 cm² of 70 µm thick copper on FR4, vertically mounted in still air. To achieve it, use multiple thermal vias (≥8 × 0.3 mm) under the tab, connect to internal ground/power planes, and avoid narrow traces interrupting the thermal path.

Is IPB80N06S3-07 suitable for linear mode (saturation region) operation?

No - it is optimized for switching operation only. Linear mode use causes localized hot-spot formation due to non-uniform current distribution across the die, leading to premature failure. For analog pass elements, select dedicated lateral or DMOS linear FETs with SOA curves validated for safe operating area in saturation.

IPB80N06S3-07 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 51A, 10V

Vgs(th) (Max) @ Id:: 4V @ 80µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7768 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 135W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N06S3-07 FAQ

1.How can I place an order for IPB80N06S3-07 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N06S3-07 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N06S3-07 reliable?

The price and inventory of IPB80N06S3-07 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N06S3-07 is usually 5 days.

3.What payment methods are accepted for IPB80N06S3-07?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N06S3-07 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N06S3-07?

IPB80N06S3-07 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N06S3-07 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N06S3-07?

For technical support, including IPB80N06S3-07 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N06S3-07 requirements.

6.How does Aetrix verify that IPB80N06S3-07 is sourced from the original manufacturer or authorized distributors?

All IPB80N06S3-07 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N06S3-07 meets industry standards.

7.What is the process for return or replacement of IPB80N06S3-07?

All IPB80N06S3-07 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N06S3-07, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N06S3-07 part is unused and in its original packaging.

Return procedure for IPB80N06S3-07:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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