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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N06S3L-06

Name: IPB80N06S3L-06
Brand: Infineon Technologies
SKU: IPB80N06S3L-06
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N06S3L-06

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N06S3L-06.pdf

Description:: MOSFET N-CH 55V 80A TO263-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPB80N06S3L-06 from Infineon Technologies is an N-channel enhancement-mode automotive-grade MOSFET in PG-TO263-3-2 package, rated for 55 V V_DS, 80 A continuous drain current at T_C = 25 °C, and R_DS(on) ≤ 5.6 mΩ at V_GS = 10 V. It is AEC-Q101 qualified, 100% avalanche tested, and operates up to 175 °C - deployed in high-current DC-DC converters and motor control stages of EV onboard chargers.

For engineers reviewing the IPB80N06S3L-06 datasheet, IPB80N06S3L-06 pinout, IPB80N06S3L-06 application, or IPB80N06S3L-06 equivalent, key selection criteria include its 1.1 K/W junction-to-case thermal resistance, 4.4 V gate plateau voltage, 131–196 nC total gate charge, and SMD-optimized thermal performance on 6 cm² PCB copper area.

Technical Context

This OptiMOS®-T2 power transistor uses trench-gate superjunction architecture to achieve low R_DS(on) × Q_g figure-of-merit while maintaining robust avalanche ruggedness (E_AS = 455 mJ at I_D = 40 A). Its gate threshold voltage (1.2–2.2 V) enables compatibility with 3.3 V and 5 V logic-level drivers.

The device integrates a fast-recovery body diode (t_rr = 55 ns, Q_rr = 70 nC) and exhibits stable R_DS(on) over temperature (≤ 10.1 mΩ at 175 °C, V_GS = 5 V), supporting high-efficiency synchronous rectification and bidirectional switching in 48 V mild-hybrid systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - maximum blocking voltage for 48 V automotive bus applications with 20 % safety margin
R_DS(on) max	5.6 mΩ @ V_GS = 10 V - enables <1.5 W conduction loss at 80 A in TO263 package
I_D cont.	80 A @ T_C = 25 °C - supported by 1.1 K/W R_thJC and 136 W P_tot rating
E_AS	455 mJ - single-pulse avalanche energy sufficient for unclamped inductive switching in motor drives
Q_g	131–196 nC - defines gate drive power requirement and switching speed trade-off in hard-switched topologies
t_r/t_f	43 ns / 39 ns - fast edge rates support >100 kHz PWM operation with minimized switching losses
V_GS(th)	1.2–2.2 V - ensures reliable turn-on with standard microcontroller GPIOs without level-shifting

Pinout & Package

IPB80N06S3L-06 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal enhancement. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires ≤16 V absolute max; 4.4 V plateau enables predictable Miller transition
Pin 2 (Drain)	High-side power node	Internally connected to exposed copper tab; must be soldered to ≥6 cm² PCB copper for R_thJA = 40 K/W
Pin 3 (Source)	Reference return path	Serves as local ground reference for gate driver; low-inductance layout critical for dV/dt immunity

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive underhood use up to 175 °C junction temperature with MSL1 reflow capability
100% avalanche tested	Each unit subjected to single-pulse E_AS stress at 455 mJ - guarantees ruggedness in inductive load switching
Optimized body diode	Q_rr = 70 nC and t_rr = 55 ns enable efficient synchronous rectification without external Schottky
Green product	RoHS-compliant, halogen-free construction meeting automotive environmental compliance requirements
Thermal design support	Specified R_thJC = 1.1 K/W and validated cooling data for 40 mm × 40 mm FR4 PCB with 6 cm² copper

Applications

Onboard Charger (OBC) DC-DC Stage

48 V Mild-Hybrid Motor Inverter

Use Scenario: High-efficiency isolated DC-DC conversion from 400 V battery to 12/48 V auxiliary rail.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier MOSFET in phase-shifted full-bridge topology.

Use Value: 5.6 mΩ R_DS(on) and low Q_rr reduce conduction and reverse recovery losses, improving system efficiency by ≥0.8 % at 5 kW output.

Use Scenario: Traction inverter half-bridge leg for 48 V belt-driven starter-generator (BISG).

IC Role / Device Role / Timing Role: Low-side switching element handling peak currents up to 320 A pulsed.

Use Value: 175 °C rating and 1.1 K/W R_thJC allow sustained 80 A operation in compact underhood enclosures without derating.

Automotive LED Headlamp Driver

12 V Battery Disconnect Switch

Use Scenario: Constant-current dimming control for adaptive front-lighting systems (AFS) with PWM modulation.

IC Role / Device Role / Timing Role: High-side switch regulating current through multi-string LED arrays.

Use Value: Fast 43 ns rise time and 1.2–2.2 V V_GS(th) enable precise 1–10 kHz PWM dimming without shoot-through risk.

Use Scenario: Solid-state replacement for mechanical relay in battery management systems (BMS) for load isolation.

IC Role / Device Role / Timing Role: Bidirectional power switch enabling controlled hot-swap and fault current limiting.

Use Value: Integrated body diode with 0.6–1.3 V V_SD supports reverse polarity protection and regenerative braking energy recapture.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N06S3L-06	Same die, PG-TO220-3-1 through-hole package; R_thJC = 1.1 K/W identical, but R_thJA = 62 K/W (no PCB copper dependency)	Suitable for prototyping or lower-volume industrial SMPS where manual assembly and heatsink mounting are preferred	Select when board space allows TO220 footprint and thermal interface to external heatsink is available
STL80N55M5	55 V, 80 A, R_DS(on) = 6.5 mΩ; not AEC-Q101 qualified; higher Q_g (220 nC); no avalanche test guarantee	Targeted at cost-sensitive industrial motor drives, not automotive environments requiring reliability validation	Choose only for non-automotive applications where qualification and guaranteed ruggedness are not required

Compared with IPP80N06S3L-06 and STL80N55M5, IPB80N06S3L-06 uniquely delivers automotive-grade reliability in an SMD package with best-in-class R_DS(on) × Q_g and verified avalanche performance - essential for production-critical 48 V vehicle systems.

Availability

IPB80N06S3L-06 is available at Aetrix Electronics and suitable for automotive onboard chargers, 48 V mild-hybrid inverters, and LED headlamp drivers requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPB80N06S3L-06 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS®-T2 power MOSFET product line, engineered specifically for high-current, high-temperature automotive power conversion where avalanche ruggedness and AEC-Q101 compliance are mandatory.

FAQ

Is IPB80N06S3L-06 pin-compatible with IPP80N06S3L-06?

No - IPB80N06S3L-06 uses PG-TO263-3-2 (D²PAK) with gull-wing leads, while IPP80N06S3L-06 uses PG-TO220-3-1 with through-hole leads. Pin numbering differs: IPB has Gate-Drain-Source (1-2-3), IPP has Gate-Drain-Source (1-2-3) but physical layout and mounting are incompatible. PCB redesign is required for substitution.

What is the maximum allowable gate-source voltage during transient conditions?

The absolute maximum V_GS is ±16 V per datasheet Rev. 1.1, qualified at –5 V and +16 V. Exceeding this risks oxide breakdown. Gate drivers must include clamping (e.g., Zener diodes) to limit overshoot during fast switching, especially with high dv/dt on drain nodes.

Does IPB80N06S3L-06 support paralleling for higher current?

Yes - its positive temperature coefficient of R_DS(on) (increases with junction temperature) enables stable current sharing. Layout must ensure matched gate drive loop inductance and symmetrical thermal paths; derating to 70 A per device recommended for 2× parallel configuration in continuous operation.

Can this MOSFET replace older OptiMOS®-T1 devices in existing designs?

Yes - IPB80N06S3L-06 offers lower R_DS(on) (5.6 mΩ vs. ~7.5 mΩ for T1), reduced Q_g, and improved thermal resistance. No layout change is needed if using PG-TO263-3-2 footprint, but gate drive strength should be verified due to higher C_iss (9417 pF) and Q_g (131–196 nC).

IPB80N06S3L-06 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 5.6mOhm @ 56A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 80µA

Gate Charge (Qg) (Max) @ Vgs:: 196 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 9417 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N06S3L-06 FAQ

1.How can I place an order for IPB80N06S3L-06 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N06S3L-06 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N06S3L-06 reliable?

The price and inventory of IPB80N06S3L-06 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N06S3L-06 is usually 5 days.

3.What payment methods are accepted for IPB80N06S3L-06?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N06S3L-06 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N06S3L-06?

IPB80N06S3L-06 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N06S3L-06 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N06S3L-06?

For technical support, including IPB80N06S3L-06 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N06S3L-06 requirements.

6.How does Aetrix verify that IPB80N06S3L-06 is sourced from the original manufacturer or authorized distributors?

All IPB80N06S3L-06 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N06S3L-06 meets industry standards.

7.What is the process for return or replacement of IPB80N06S3L-06?

All IPB80N06S3L-06 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N06S3L-06, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N06S3L-06 part is unused and in its original packaging.

Return procedure for IPB80N06S3L-06:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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