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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N06S405ATMA1

Name: IPB80N06S405ATMA1
Brand: Infineon Technologies
SKU: IPB80N06S405ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N06S405ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N06S405ATMA1.pdf

Description:: MOSFET N-CH 60V 80A TO263-3

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Product details

Overview

IPB80N06S405ATMA1 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO263-3-2 package, rated for 60 V V_DS, 5.4 mΩ max R_DS(on) at V_GS = 10 V and I_D = 80 A, with 175 °C maximum junction temperature and AEC-Q101 qualification. It delivers high-current switching in automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPB80N06S405ATMA1 datasheet, IPB80N06S405ATMA1 pinout, IPB80N06S405ATMA1 application, or IPB80N06S405ATMA1 equivalent, key selection criteria include R_DS(on) at 100 °C, single-pulse avalanche energy (152 mJ), gate charge profile (Q_g = 62–81 nC), thermal resistance (R_thJC = 1.4 K/W), and SMD-compatible TO263 footprint.

Technical Context

This device uses trench-gate silicon technology optimized for low conduction and switching losses in high-duty-cycle automotive power stages. Its 60 V breakdown voltage supports 48 V system rails, while the 5.4 mΩ R_DS(on) enables efficient operation at 80 A continuous drain current under T_C = 100 °C conditions.

The integrated body diode features 0.6–1.3 V forward voltage at 80 A and 36 ns reverse recovery time, enabling synchronous rectification and freewheeling in half-bridge topologies. Gate plateau voltage is fixed at 5.6 V, supporting robust drive with standard 10 V logic-level gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Supports 48 V nominal battery systems with 25 % headroom for load dump transients
R_DS(on) max	5.4 mΩ @ V_GS = 10 V, I_D = 80 A - Enables <1.5 W conduction loss at full load in 12 V/80 A switch
I_D continuous	80 A @ T_C = 25 °C - Limited by bondwire; usable up to 75 A at T_C = 100 °C
E_AS	152 mJ @ I_D = 40 A - Withstands single inductive turn-off events without failure in motor drives
Q_g	62–81 nC - Determines gate driver current requirement (~1.6 A peak for 50 ns rise time)
R_thJC	1.4 K/W - Allows direct heatsink mounting for thermal management in space-constrained modules
V_GS(th)	2.0–4.0 V - Ensures reliable turn-on with 5 V microcontroller outputs and noise margin

Pinout & Package

IPB80N06S405ATMA1 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with isolated tab. The case serves as the drain terminal, enabling low-inductance PCB copper pour connection for thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or current-sense shunt
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <100 nA leakage and 5.6 V plateau drive
Pin 3 (Drain)	Power output / heat sink interface	Exposed metal tab electrically connected to drain; must be soldered to large copper area for thermal dissipation

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements
100 % avalanche tested	Each unit passes single-pulse E_AS screening at production, ensuring ruggedness in inductive switching
MSL1 rating	Compatible with lead-free reflow up to 260 °C peak, eliminating moisture sensitivity concerns
Green Product (RoHS)	Lead-free, halogen-free, and compliant with EU Directive 2011/65/EU
OptiMOS™-T2 architecture	Trench-based process delivering 15 % lower R_DS(on) × Q_g figure-of-merit vs. prior generation

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS)

Use Scenario: High-efficiency 12 V to 48 V bidirectional converter in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Primary high-side switch in synchronous buck-boost topology operating at 100–200 kHz.

Use Value: 5.4 mΩ R_DS(on) reduces conduction loss by >30 % versus 8 mΩ alternatives at 60 A, improving system efficiency by 1.2 %.

Use Scenario: Three-phase inverter driving 300–500 W brushless DC motor in column-assist EPS systems.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg with fast 8 ns fall time and 36 ns t_rr.

Use Value: 152 mJ E_AS withstands motor phase short-circuits during fault conditions without desaturation failure.

Onboard Charger (OBC) PFC Stage

Industrial Motor Drives

Use Scenario: Boost switch in 3.3 kW single-phase PFC front-end for EV charging stations.

IC Role / Device Role / Timing Role: Fast-switching MOSFET with 20 ns t_d(on) and 35 ns t_d(off) enabling >65 kHz operation.

Use Value: C_iss = 5000–6500 pF and Q_gd = 7–14 nC minimize Miller-induced shoot-through risk in critical conduction mode.

Use Scenario: Half-bridge output stage in 5–7.5 kW HVAC inverter for commercial air handling units.

IC Role / Device Role / Timing Role: High-current switching device rated for 175 °C junction operation in sealed enclosures.

Use Value: 1.4 K/W R_thJC allows direct heatsink mounting without thermal interface material, reducing assembly cost and thermal resistance by 0.3 K/W.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N06S4-05	PG-TO220-3-1 through-hole package; identical R_DS(on), V_DS, and Q_g; no MSL1 reflow rating	Suitable for prototyping and low-volume industrial boards where manual soldering is acceptable	Select when board-level reflow is not required and mechanical mounting stability is prioritized over thermal performance
IPB80N06S4-05R	Same PG-TO263-3-2 package but with reduced R_DS(on) (4.4 mΩ typ); higher gate charge (81 nC max); same avalanche rating	Better suited for high-efficiency 48 V server VRMs where conduction loss dominates over switching loss	Choose only if system efficiency gain justifies increased gate drive power and layout complexity

Compared with IPP80N06S4-05 and IPB80N06S4-05R, IPB80N06S405ATMA1 balances reflow compatibility, thermal performance, and gate drive simplicity-making it optimal for volume automotive SMT production where reliability and manufacturability are co-prioritized.

Availability

IPB80N06S405ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering systems, and onboard charger PFC stages requiring stable component supply across multi-year vehicle programs.

Supply support for IPB80N06S405ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T2 product line, engineered specifically for high-current, high-reliability automotive power conversion where thermal robustness, avalanche capability, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPB80N06S405ATMA1?

The absolute maximum V_GS is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage, while sustained use above ±12 V accelerates long-term threshold voltage drift. Recommended drive is 10 V for full R_DS(on) optimization with margin against noise-induced turn-on.

Does IPB80N06S405ATMA1 require a gate resistor for safe switching?

Yes-a series gate resistor (typically 2.2–10 Ω) is required to control dV/dt and prevent parasitic oscillation during turn-on/off. Without it, the 62–81 nC gate charge and low Crss can cause ringing that exceeds V_GS limits or induces shoot-through in bridge configurations.

Can IPB80N06S405ATMA1 replace IPP80N06S4-05 in existing through-hole designs?

No-IPB80N06S405ATMA1 uses PG-TO263-3-2 (D²PAK), which has different pad layout, thermal pad requirements, and solder profile than IPP80N06S4-05's PG-TO220-3-1. Direct replacement requires PCB redesign and requalification of thermal and mechanical performance.

Is the body diode in IPB80N06S405ATMA1 suitable for synchronous rectification?

Yes-the body diode has 0.6–1.3 V V_SD at 80 A and 36 ns t_rr, enabling use in synchronous buck topologies up to 200 kHz. However, external Schottky diodes are preferred above 150 kHz due to Q_rr = 41 nC limiting zero-voltage switching window.

IPB80N06S405ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 60µA

Gate Charge (Qg) (Max) @ Vgs:: 81 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N06S405ATMA1 FAQ

1.How can I place an order for IPB80N06S405ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N06S405ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N06S405ATMA1 reliable?

The price and inventory of IPB80N06S405ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N06S405ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB80N06S405ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N06S405ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N06S405ATMA1?

IPB80N06S405ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N06S405ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N06S405ATMA1?

For technical support, including IPB80N06S405ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N06S405ATMA1 requirements.

6.How does Aetrix verify that IPB80N06S405ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB80N06S405ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N06S405ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB80N06S405ATMA1?

All IPB80N06S405ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N06S405ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N06S405ATMA1 part is unused and in its original packaging.

Return procedure for IPB80N06S405ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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