Infineon Technologies IPB80N06S407ATMA1

Overview

IPB80N06S407ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO263-3-2 package, rated for 60 V V_DS, 7.1 mΩ max R_DS(on) at 10 V V_GS, 80 A continuous drain current at T_C = 25 °C, and 175 °C maximum junction temperature. It delivers high-current switching in automotive DC-DC converters, motor control inverters, and battery disconnect circuits.

For engineers reviewing the IPB80N06S407ATMA1 datasheet, IPB80N06S407ATMA1 pinout, IPB80N06S407ATMA1 application, or IPB80N06S407ATMA1 equivalent, key selection criteria include R_DS(on) at 100 °C, single-pulse avalanche energy (71 mJ), gate charge profile (Q_g = 43–56 nC), thermal resistance (R_thJC = 1.9 K/W), and AEC-Q101 qualification status.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its 3460–4500 pF input capacitance (C_iss) and 35–70 pF reverse transfer capacitance (C_rss) support controlled turn-on/turn-off transitions with t_d(on) = 15 ns and t_d(off) = 23 ns under standard test conditions.

The integrated body diode exhibits V_SD = 0.6–1.3 V at I_F = 80 A and T_j = 25 °C, with t_rr = 39 ns and Q_rr = 38 nC, enabling efficient synchronous rectification and freewheeling in hard-switched topologies.

Key Specifications

Pinout & Package

IPB80N06S407ATMA1 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP80N06S4-07 and IPB80N06S4-07R, the IPB80N06S407ATMA1 offers identical silicon performance in optimized D²PAK packaging with MSL1 reflow compatibility-making it the preferred choice for automotive-grade SMT production requiring AEC-Q101 traceability and thermal reliability.

Availability

IPB80N06S407ATMA1 is available at Aetrix Electronics and suitable for automotive battery management systems, electric power steering modules, and industrial motor starters requiring stable component supply, long-term lifecycle assurance, and AEC-Q101 compliance.

Supply support for IPB80N06S407ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global R&D and fabrication facilities.

This part belongs to the OptiMOS®-T2 power transistor product line, engineered specifically for high-current, high-temperature automotive and industrial switching applications demanding low R_DS(on), robust avalanche capability, and AEC-Q101 validation.

FAQ

What is the maximum allowable gate-source voltage for IPB80N06S407ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this rating risks permanent gate oxide damage. Recommended drive voltage is 10 V for full enhancement, with minimum 6 V required to sustain 80 A drain current at elevated temperatures. Gate drive circuits must include clamping or zener protection to prevent transient overshoot.

Does IPB80N06S407ATMA1 include an integrated body diode, and what are its key parameters?

Yes, it features a monolithic body diode with forward voltage V_SD = 0.6–1.3 V at I_F = 80 A and T_j = 25 °C, reverse recovery time t_rr = 39 ns, and recovered charge Q_rr = 38 nC. These values are measured at V_R = 30 V, I_F = 50 A, and di_F/dt = 100 A/µs, supporting use in freewheeling and synchronous rectification roles.

How does the thermal resistance R_thJC of 1.9 K/W translate to real-world heatsinking requirements?

With R_thJC = 1.9 K/W and maximum P_tot = 79 W at T_C = 25 °C, the junction-to-case temperature rise is 150 K at full power. To maintain T_j ≤ 175 °C at ambient 85 °C, total system thermal resistance (case-to-ambient) must be ≤ 1.1 K/W - achievable with a medium-sized aluminum heatsink and thermal interface material, assuming proper solder coverage on the drain pad.

Is IPB80N06S407ATMA1 suitable for linear-mode operation, such as in electronic loads or hot-swap controllers?

Yes - its 100% avalanche-tested structure and SOA curves (page 4 of datasheet) confirm safe operation in linear region up to V_DS = 60 V and I_D = 80 A for short durations. However, sustained linear operation requires active thermal monitoring and derating per the Safe Operating Area chart, especially above 100 °C case temperature.