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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N06S4L05ATMA1

Name: IPB80N06S4L05ATMA1
Brand: Infineon Technologies
SKU: IPB80N06S4L05ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N06S4L05ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N06S4L05ATMA1.pdf

Description:: MOSFET N-CH 60V 80A TO263-3

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Product details

Overview

IPB80N06S4L05ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO263-3-2 package, rated for 60 V V_DS, 4.8 mΩ max R_DS(on) at V_GS = 10 V and I_D = 80 A, with 175 °C maximum junction temperature. It delivers high-current switching in automotive DC-DC converters and motor control stages.

For engineers reviewing the IPB80N06S4L05ATMA1 datasheet, IPB80N06S4L05ATMA1 pinout, IPB80N06S4L05ATMA1 application, or IPB80N06S4L05ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, avalanche energy (152 mJ), thermal resistance (1.4 K/W), and AEC-Q101 qualification status for under-hood deployment.

Technical Context

This device uses trench-gate silicon technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (1.2–2.2 V) enables robust TTL/CMOS-level drive compatibility, while the integrated body diode supports synchronous rectification and freewheeling in half-bridge topologies.

The MOSFET features 100% unclamped inductive switching (UIS) tested to 152 mJ at 40 A, and its dynamic parameters-including 83–110 nC total gate charge and 6290–8180 pF input capacitance-support efficient high-frequency PWM operation up to 200 kHz in buck converters and BLDC gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage for 12 V battery rail applications with load dump margin.
R_DS(on) max	4.8 mΩ @ V_GS = 10 V, I_D = 80 A - Enables <1.5 W conduction loss at full current, reducing heatsink requirements.
I_D continuous	80 A @ T_C = 25 °C - Sustains high-current motor phase or solenoid drive without derating at board-level cooling.
E_AS	152 mJ - Confirmed single-pulse avalanche energy supports reliable operation during inductive turn-off transients.
R_thJC	1.4 K/W - Junction-to-case thermal resistance enables direct mounting to heatsinks for high-power density designs.
Q_g typ	96.5 nC - Total gate charge determines driver strength requirement; compatible with standard 2 A peak gate drivers.
V_GS(th)	1.7 V typ - Low threshold ensures turn-on with 3.3 V or 5 V logic, supporting microcontroller direct drive in space-constrained modules.

Pinout & Package

IPB80N06S4L05ATMA1 is housed in a surface-mount PG-TO263-3-2 (D²PAK) package with exposed drain pad for thermal and electrical connection. Pin 1 is Gate, Pin 2 is Drain (tab), Pin 3 is Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; accepts 0–10 V logic-level signals; requires <100 nA leakage current handling.
Pin 2 (D)	Drain	Main power output node; electrically and thermally connected to exposed copper tab for PCB heat sinking.
Pin 3 (S)	Source	Reference node for gate drive; tied to low-side switch common point in half-bridge configurations.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements including HTOL, TC, and UHAST.
175 °C operating temperature	Enables placement near hot components (e.g., exhaust manifolds, inverters) without thermal derating penalties.
100% UIS tested	Each unit verified for 152 mJ avalanche energy, eliminating need for external snubbers in inductive load switching.
Green Product (RoHS)	Lead-free and halogen-free construction compliant with EU Directive 2011/65/EU and IPC-1752A Class 2 reporting.
OptiMOS™-T2 architecture	Trench-based process delivering 15% lower R_DS(on) × Q_g figure-of-merit vs. prior generation for improved efficiency in 100–200 kHz SMPS.

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS) H-Bridge

Use Scenario: 12 V to 5 V/3.3 V step-down conversion in ADAS domain controllers with transient load steps up to 40 A.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in multiphase buck regulator, switching at 150 kHz.

Use Value: 4.8 mΩ R_DS(on) reduces conduction loss by 32% versus 7 mΩ alternatives, enabling >94% peak efficiency at 25 A output.

Use Scenario: Bidirectional motor current control in 12 V EPS systems requiring 80 A peak phase current and fast torque response.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge inverter driving brushed DC assist motor; operated with 10 kHz PWM.

Use Value: 152 mJ avalanche rating eliminates external clamping diodes, simplifying layout and reducing BOM count by one component per phase.

On-Board Charger (OBC) Auxiliary Supplies

Engine Control Unit (ECU) Solenoid Drivers

Use Scenario: Isolated auxiliary supply (12 V → 15 V) powering gate drivers and sensors in 3.3 kW OBCs with CAN FD communication.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward converter, operating at 120 kHz with ZVS capability.

Use Value: 83–110 nC Q_g allows clean 10 ns rise/fall times with 2 A gate driver, minimizing switching loss contribution to <12% of total loss budget.

Use Scenario: High-current fuel injector or turbocharger VGT actuator driver in diesel ECUs with 12 V nominal supply and 24 V load dump.

IC Role / Device Role / Timing Role: Single-ended low-side driver with integrated freewheeling path via body diode.

Use Value: 0.6–1.3 V V_SD forward voltage at 80 A ensures <1.04 W diode conduction loss during flyback, reducing thermal stress on PCB copper.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N06S4L-05	Same die, TO-220-3-1 package; R_thJA = 62 K/W (no PCB copper area); no exposed drain pad.	Suitable for prototyping or low-volume through-hole assembly; not recommended for high-power density automotive modules.	Select when mechanical mounting constraints require through-hole leads and thermal performance is secondary to cost.
IPI80N06S4L-05	Same die, TO-262-3-1 package; R_thJC = 1.4 K/W identical, but leadframe design limits max I_D to 78 A at 100 °C case.	Used in industrial motor drives where ambient temperature exceeds 85 °C but vibration resistance is less critical than in automotive.	Prefer for industrial HVAC blowers where JEDEC MSL1 reflow is unnecessary and leaded thermal interface suffices.

Compared with IPP80N06S4L-05 and IPI80N06S4L-05, IPB80N06S4L05ATMA1 offers superior thermal integration via D²PAK's exposed drain pad and optimized PCB copper coupling-critical for maintaining 175 °C junction temperature in compact, sealed automotive enclosures.

Availability

IPB80N06S4L05ATMA1 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering, and engine control unit applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IPB80N06S4L05ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T2 product line, engineered specifically for high-efficiency, high-reliability 12 V automotive power systems including DC-DC conversion, motor control, and solenoid actuation.

FAQ

What is the maximum allowable gate-source voltage for IPB80N06S4L05ATMA1?

The absolute maximum gate-source voltage is ±16 V, as specified in the datasheet's "Maximum ratings" table. Operation beyond this range risks permanent gate oxide damage. For reliable 12 V system designs, gate drive circuits should be clamped to ≤12 V with transient suppression, especially during load dump events where coupled noise may exceed 20 V.

Does IPB80N06S4L05ATMA1 support 4.5 V logic-level gate drive?

Yes - R_DS(on) is guaranteed at 5.7 mΩ max with V_GS = 4.5 V and I_D = 40 A, enabling direct drive from 5 V microcontrollers. However, full 80 A current capability requires ≥10 V gate drive to achieve the 4.8 mΩ typical R_DS(on); use level-shifting or dedicated gate drivers for high-current, high-efficiency operation.

Is the body diode suitable for continuous freewheeling in H-bridge configurations?

Yes - the integrated body diode is rated for 80 A continuous forward current and 320 A pulsed current, with V_SD = 0.95 V typical at 80 A and 25 °C. Its 36 ns reverse recovery time and 41 nC Q_rr support efficient commutation in 10–100 kHz H-bridge motor drives without external Schottky supplementation.

How does the MSL1 rating impact reflow soldering of IPB80N06S4L05ATMA1?

The MSL1 classification confirms the device withstands peak reflow temperatures up to 260 °C without popcorn cracking or delamination. This permits standard lead-free SAC305 reflow profiles (e.g., JEDEC J-STD-020) with 60-second exposure above 217 °C, making it compatible with high-volume SMT lines used in automotive module manufacturing.

IPB80N06S4L05ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 60µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 8180 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N06S4L05ATMA1 FAQ

1.How can I place an order for IPB80N06S4L05ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N06S4L05ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N06S4L05ATMA1 reliable?

The price and inventory of IPB80N06S4L05ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N06S4L05ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB80N06S4L05ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N06S4L05ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N06S4L05ATMA1?

IPB80N06S4L05ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N06S4L05ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N06S4L05ATMA1?

For technical support, including IPB80N06S4L05ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N06S4L05ATMA1 requirements.

6.How does Aetrix verify that IPB80N06S4L05ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB80N06S4L05ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N06S4L05ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB80N06S4L05ATMA1?

All IPB80N06S4L05ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N06S4L05ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N06S4L05ATMA1 part is unused and in its original packaging.

Return procedure for IPB80N06S4L05ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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