Infineon Technologies IPB80N06S4L05ATMA2

Overview

IPB80N06S4L05ATMA2 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PG-TO263-3-2 package, rated for 60 V V_DS, 4.8 mΩ R_DS(on) (max) at V_GS = 10 V and I_D = 80 A, with 175 °C maximum junction temperature. It delivers high-current switching in automotive powertrain and body control modules requiring robust avalanche capability and RoHS-compliant packaging.

For engineers reviewing the IPB80N06S4L05ATMA2 datasheet, IPB80N06S4L05ATMA2 pinout, IPB80N06S4L05ATMA2 application, or IPB80N06S4L05ATMA2 equivalent, key selection criteria include its 1.4 K/W R_thJC, 152 mJ single-pulse E_AS, 80 A continuous drain current at T_C = 25 °C, and gate plateau voltage of 3.7 V - all critical for thermal design and PWM-driven motor control stages.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology to achieve low R_DS(on) × Q_g figure-of-merit while maintaining fast switching (t_r = 4 ns, t_f = 13 ns) and low gate charge (Q_g = 83–110 nC). Its 100% avalanche-tested construction supports unclamped inductive switching in automotive DC-DC converters and H-bridge drivers.

The MOSFET features a 1.2–2.2 V gate threshold (V_GS(th)) and exhibits stable R_DS(on) over temperature (4.2–5.1 mΩ at 80 A/10 V from 25 °C to 175 °C), enabling predictable conduction loss in engine control units operating across extended ambient ranges.

Key Specifications

Pinout & Package

IPB80N06S4L05ATMA2 uses the PG-TO263-3-2 surface-mount package (D²PAK), with drain-connected tab for thermal and electrical performance. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP80N06S4L-05 and IPB80N06S4-04, IPB80N06S4L05ATMA2 balances lowest gate charge (83–110 nC) and industry-standard 4.8 mΩ R_DS(on), making it ideal for automotive PWM applications demanding both thermal headroom and driver efficiency.

Availability

IPB80N06S4L05ATMA2 is available at Aetrix Electronics and suitable for automotive engine control units, electric power steering systems, and on-board chargers requiring stable component supply with AEC-Q101 compliance and long-term production continuity.

Supply support for IPB80N06S4L05ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS®-T2 family, engineered specifically for high-efficiency, high-reliability automotive power switching applications including engine management, ADAS actuation, and electrified drivetrain subsystems.

FAQ

What is the maximum allowable gate-source voltage for IPB80N06S4L05ATMA2?

The absolute maximum gate-source voltage is ±16 V. Operation beyond this range risks permanent gate oxide damage. For reliable 10 V drive, a gate driver with rail-to-rail output and transient suppression (e.g., 15 V Zener clamp) is recommended to prevent overshoot during fast switching transitions.

Does IPB80N06S4L05ATMA2 require a heatsink in automotive under-hood applications?

Yes - due to its 1.4 K/W R_thJC, effective thermal management requires direct attachment of the exposed drain tab to a heatsink or ≥6 cm² copper area on FR4 PCB. At 80 A continuous current and 175 °C T_j, case temperature must be held ≤100 °C using forced air or conductive cooling.

How does the diode forward voltage affect reverse recovery in motor drive applications?

V_SD is 0.6–1.3 V at 80 A and 25 °C, with t_rr = 36 ns and Q_rr = 41 nC. These values minimize body diode conduction loss and reverse recovery spikes during freewheeling in H-bridge configurations, reducing EMI and preventing shoot-through in synchronous rectification.

Is IPB80N06S4L05ATMA2 suitable for 48 V mild-hybrid systems?

Yes - its 60 V V_DS rating provides 20 % margin above nominal 48 V bus, and its 152 mJ E_AS withstands load-dump transients up to ISO 7637-2 Pulse 5a (120 V/100 ms). Combined with AEC-Q101 qualification, it meets functional safety requirements for Class D 48 V architectures.