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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N07S405ATMA1

Name: IPB80N07S405ATMA1
Brand: Infineon Technologies
SKU: IPB80N07S405ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N07S405ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IPB80N07S405ATMA1.pdf

Description:: MOSFET N-CH TO263-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPB80N07S405ATMA1 from Infineon Technologies is an AEC-Q101-qualified N-channel enhancement-mode power MOSFET in PG-TO263-3-2 package, rated for 75 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 5.2 mΩ max R_DS(on) at V_GS = 10 V. It features 100% single-pulse avalanche testing (240 mJ), 175 °C maximum junction temperature, and MSL1 reflow compatibility up to 260 °C - deployed in automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPB80N07S405ATMA1 datasheet, IPB80N07S405ATMA1 pinout, IPB80N07S405ATMA1 application, or IPB80N07S405ATMA1 equivalent, key selection criteria include its 1.0 K/W R_thJC, 4.5–5.2 mΩ typical R_DS(on) in SMD configuration, integrated body diode with 90 ns t_rr, and AEC qualification for under-hood switching use.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-current 12 V/24 V automotive systems. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS drive compatibility, while the 52–69 nC total gate charge supports efficient PWM operation at frequencies up to 100 kHz.

The integrated body diode exhibits 0.9–1.3 V forward voltage at 80 A and 25 °C, with 60 nC reverse recovery charge and 90 ns recovery time - critical for synchronous rectification and freewheeling in half-bridge topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - supports 24 V nominal battery systems with 3× safety margin against load-dump transients
R_DS(on) max	5.2 mΩ at V_GS = 10 V, T_j = 25 °C - enables <1 W conduction loss at 80 A in compact SMD layout
I_D continuous	80 A at T_C = 25 °C - limited by bondwire; usable up to 80 A with proper heatsinking per R_thJC = 1.0 K/W
E_AS	240 mJ single-pulse avalanche energy - ensures ruggedness during inductive turn-off events in motor drives
t_rr	90 ns - minimizes commutation loss and shoot-through risk in bridge configurations
Q_g	52–69 nC - determines gate driver power requirement and switching speed trade-off at 10–100 kHz
T_j max	+175 °C - allows operation in engine compartment environments without derating below 125 °C ambient

Pinout & Package

IPB80N07S405ATMA1 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal performance. The three terminals are arranged in standard pin-1–pin-2–pin-3 order: Gate (G), Source (S), Drain (D).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 10 V logic-level drive; 2.0–4.0 V V_GS(th) ensures reliable turn-on with automotive MCU outputs
Pin 2 (Source)	Reference node	Common return path for gate drive and load current; tied to PCB ground plane for low-inductance routing
Pin 3 (Drain)	Power output terminal	Connected to high-side switch node or motor phase; requires direct copper pour for thermal transfer (R_thJC = 1.0 K/W)

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements
100% avalanche tested	Each unit passes single-pulse E_AS = 240 mJ test - eliminates field failure due to unclamped inductive switching
MSL1 reflow rating	Withstands peak solder temperatures up to 260 °C - compatible with standard lead-free assembly processes
Green Product (RoHS)	Lead-free, halogen-free, and compliant with EU Directive 2011/65/EU - meets Tier-1 automotive sourcing mandates
Optimized body diode	t_rr = 90 ns and Q_rr = 60 nC enable efficient freewheeling without external diode in H-bridge motor drivers

Applications

Automotive HVAC Blower Control

12 V Automotive DC-DC Converter

Use Scenario: High-side switching of brushed DC blower motors in climate control modules.

IC Role / Device Role / Timing Role: Power switch in half-bridge configuration, operating at 20–50 kHz PWM with 80 A peak load current.

Use Value: 5.2 mΩ R_DS(on) reduces conduction loss by >30% vs. legacy 8 mΩ MOSFETs, enabling smaller heatsinks in space-constrained dash modules.

Use Scenario: Primary-side synchronous rectifier in 12 V input, 5 V/30 A isolated buck converter for ADAS ECUs.

IC Role / Device Role / Timing Role: Low-side switch with fast body diode recovery (t_rr = 90 ns) for zero-voltage switching transitions.

Use Value: Integrated diode eliminates need for discrete Schottky, reducing BOM count and PCB area while maintaining <1.3 V V_SD at full load.

Engine Start-Stop System Solenoid Driver

Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: Driving 12 V solenoid actuators during engine restart cycles with high inrush current.

IC Role / Device Role / Timing Role: Single-pole high-current switch handling 320 A pulsed drain current (I_D,pulse) during engagement.

Use Value: 240 mJ avalanche energy rating prevents failure during solenoid coil de-energization transients without snubber networks.

Use Scenario: Phase-leg switching in 3-phase 24 V EPS motor inverter with 80 A RMS phase current.

IC Role / Device Role / Timing Role: N-channel MOSFET in each half-bridge leg, operated with 100 kHz PWM and active freewheeling via body diode.

Use Value: 175 °C T_j,max and 1.0 K/W R_thJC allow sustained 80 A operation in sealed EPS housing with minimal thermal margin loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N07S4-05	Same die, TO-220-3-1 through-hole package; R_thJA = 62 K/W (leaded), no exposed drain pad	Better suited for prototyping or low-volume industrial controls where manual assembly and heatsink mounting are preferred	Select when board-level reflow is unavailable or mechanical retention via screw-mount heatsink is required
IPB80N07S404ATMA1	Same package but 4.0 mΩ max R_DS(on); higher gate charge (75 nC) and cost	Used where <0.8 W conduction loss at 80 A is mandatory, e.g., high-efficiency traction inverters	Choose only if system efficiency gain justifies 15–20% higher gate drive power and unit cost

Compared with IPP80N07S4-05 and IPB80N07S404ATMA1, IPB80N07S405ATMA1 delivers optimal balance of SMD manufacturability, thermal performance (R_thJC = 1.0 K/W), and cost for volume automotive power stages - avoiding TO-220 assembly overhead and over-spec'd R_DS(on) premium.

Availability

IPB80N07S405ATMA1 is available at Aetrix Electronics and suitable for automotive HVAC blower control, 12 V DC-DC converters, and electric power steering motor phases requiring stable component supply across multi-year vehicle production programs.

Supply support for IPB80N07S405ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T2 power transistor product line, engineered specifically for high-current, high-reliability switching in automotive 12 V/24 V systems - emphasizing avalanche ruggedness, AEC-Q101 compliance, and thermally optimized packaging.

FAQ

Is IPB80N07S405ATMA1 pin-compatible with IPP80N07S4-05?

No - IPB80N07S405ATMA1 uses PG-TO263-3-2 (D²PAK) surface-mount packaging with exposed drain pad, while IPP80N07S4-05 uses PG-TO220-3-1 through-hole packaging. Pin numbering differs: D²PAK assigns Gate–Source–Drain to pins 1–2–3; TO-220 assigns Gate–Drain–Source to pins 1–2–3. Mechanical and thermal layouts are not interchangeable.

What is the maximum recommended gate resistor value for 50 kHz PWM operation?

For 50 kHz PWM with 80 A load, a 3.5 Ω gate resistor is validated in Infineon's reference design (V_DD = 60 V, I_D = 80 A). Using >5 Ω increases switching time beyond 50 ns rise/fall, raising dynamic losses. Below 2 Ω risks gate driver overshoot and ringing due to 52–69 nC Q_g and PCB trace inductance.

Does this MOSFET require a negative gate voltage for safe turn-off in high-di/dt environments?

No - the device has ±20 V V_GS rating and stable 2.0–4.0 V V_GS(th) across –55 to +175 °C. A 0 V turn-off is sufficient; applying –5 V offers no reliability benefit and complicates gate driver design. Negative bias is unnecessary unless shared-source parasitic inductance exceeds 10 nH in multi-device paralleling.

Can IPB80N07S405ATMA1 replace older OptiMOS™-T1 devices like IPB80N07S2-05 in existing designs?

Yes - it is a direct drop-in replacement with identical pinout, lower R_DS(on) (5.2 mΩ vs. 6.2 mΩ), improved E_AS (240 mJ vs. 180 mJ), and same AEC-Q101 qualification. Thermal design remains valid; however, reduced gate charge may require minor gate driver timing adjustment to maintain optimal dV/dt control.

IPB80N07S405ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IPB80N07S405ATMA1 FAQ

1.How can I place an order for IPB80N07S405ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N07S405ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N07S405ATMA1 reliable?

The price and inventory of IPB80N07S405ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N07S405ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB80N07S405ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N07S405ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N07S405ATMA1?

IPB80N07S405ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N07S405ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N07S405ATMA1?

For technical support, including IPB80N07S405ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N07S405ATMA1 requirements.

6.How does Aetrix verify that IPB80N07S405ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB80N07S405ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N07S405ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB80N07S405ATMA1?

All IPB80N07S405ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N07S405ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N07S405ATMA1 part is unused and in its original packaging.

Return procedure for IPB80N07S405ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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