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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N08S2L07ATMA1

Name: IPB80N08S2L07ATMA1
Brand: Infineon Technologies
SKU: IPB80N08S2L07ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N08S2L07ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N08S2L07ATMA1.pdf

Description:: MOSFET N-CH 75V 80A TO263-3

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Product details

Overview

IPB80N08S2L07ATMA1 from Infineon Technologies is an N-channel logic-level enhancement-mode power MOSFET in PG-TO263-3-2 package, rated for 75 V V_DS, 80 A continuous drain current at T_C = 25 °C, and ultra-low R_DS(on) of 4.8–6.8 mΩ at V_GS = 10 V. It is AEC-Q101 qualified for automotive applications and operates up to 175 °C junction temperature.

For engineers reviewing the IPB80N08S2L07ATMA1 datasheet, IPB80N08S2L07ATMA1 pinout, IPB80N08S2L07ATMA1 application, or IPB80N08S2L07ATMA1 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), avalanche ruggedness (E_AS = 810 mJ), thermal resistance (R_thJC = 0.5 K/W), and SMD-compatible TO263 footprint for high-current motor control and DC-DC converter designs.

Technical Context

This OptiMOS™ device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-efficiency 12 V/24 V automotive and industrial power stages. Its gate threshold voltage range (1.2–2.0 V) ensures reliable turn-on with standard 3.3 V or 5 V logic controllers, while the 5.1–7.1 mΩ R_DS(on) at V_GS = 10 V supports high-current synchronous rectification.

The MOSFET integrates a robust body diode with t_rr = 95–120 ns and Q_rr = 240–300 nC, enabling fast recovery in hard-switched topologies. Thermal design is supported by a low junction-to-case resistance (0.5 K/W) and MSL1 rating for lead-free reflow up to 260 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum blocking voltage for 24 V battery systems with 3× transient margin
R_DS(on) max @ V_GS=10 V	7.1 mΩ - Enables ≤1.5 W conduction loss at 80 A in high-current load switches
I_D continuous @ T_C=25 °C	80 A - Supported by bondwire-limited current handling and 300 W P_tot
E_AS single pulse	810 mJ - Confirmed avalanche energy rating for inductive load switching reliability
Q_g total	183–233 nC - Determines gate driver strength requirement for <100 ns switching transitions
t_r/t_f	55 ns / 22 ns - Fast edge rates enable >200 kHz PWM operation with minimal switching loss
T_j operating range	−55 to +175 °C - Validated for under-hood automotive environments and industrial motor drives

Pinout & Package

IPB80N08S2L07ATMA1 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with isolated heatsink tab. The package features Gull-wing leads, thermally enhanced copper drain pad, and MSL1 reflow compatibility.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for channel current	Low-inductance connection point for PCB ground plane; ties to internal source metallization
Pin 2 (Gate)	Control terminal for channel modulation	High-impedance input requiring <233 nC charge; sensitive to ESD per HBM Class 2A
Pin 3 (Drain)	Main current-carrying terminal (connected to heatsink tab)	Exposed copper pad on underside serves as primary thermal path and high-current drain node

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.2–2.0 V enables direct interface with microcontrollers and ASICs without level-shifting
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements
100% avalanche tested	Each unit passes single-pulse E_AS screening at 810 mJ, ensuring robustness in inductive switching
Green package	Lead-free, halogen-free construction compliant with RoHS and ELV directives
Ultra-low R_DS(on)	4.8 mΩ typ. at V_GS = 10 V reduces I²R losses by >30% vs. prior-generation 80 A MOSFETs

Applications

Automotive Body Control Module (BCM)

Industrial DC Motor Drive

Use Scenario: High-side load switching for headlights, fans, and solenoids in 12 V/24 V vehicle electrical architecture.

IC Role / Device Role / Timing Role: Power switch controlling up to 80 A resistive/inductive loads with PWM dimming capability.

Use Value: Low R_DS(on) minimizes heat generation in confined BCM enclosures; AEC-Q101 ensures long-term reliability across temperature cycles.

Use Scenario: Half-bridge leg in 48 V BLDC motor inverters for factory automation and material handling equipment.

IC Role / Device Role / Timing Role: High-current, high-frequency switching element in synchronous rectification stage.

Use Value: Fast t_r/t_f and low Q_g reduce switching losses at 20–50 kHz; 175 °C rating supports sealed motor housing thermal environments.

Server PSU OR-ing FET

Telecom DC-DC Converter Primary Switch

Use Scenario: Hot-swap and redundancy management in 12 V intermediate bus architectures with parallel power supplies.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET acting as ideal diode replacement with bidirectional conduction control.

Use Value: Ultra-low R_DS(on) cuts forward voltage drop to <0.4 V at 80 A, improving system efficiency over Schottky solutions.

Use Scenario: Primary-side switch in isolated 48 V–12 V flyback or active-clamp forward converters for telecom base stations.

IC Role / Device Role / Timing Role: High-voltage, high-current switching node handling repetitive 75 V transients and 80 A peak currents.

Use Value: Avalanche ruggedness (810 mJ) absorbs leakage inductance spikes without external snubbers; TO263 thermal performance sustains 300 W dissipation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N08S2L-07	Same die, PG-TO220-3-1 through-hole package; R_thJA = 62 K/W (leaded) vs. 40 K/W (SMD, 6 cm²)	Preferred for prototyping, lower-volume industrial controls where manual assembly is acceptable	Select IPP80N08S2L-07 when board space allows through-hole mounting and thermal management uses heatsinks rather than PCB copper area
IPB80N06S4-05	60 V V_DS, 5.0 mΩ R_DS(on) @ 10 V, same package; not AEC-Q101 qualified	Suitable for non-automotive 12 V systems where higher voltage margin is not required	Choose IPB80N06S4-05 only for cost-sensitive consumer or computing power supplies without automotive qualification needs

Compared with IPP80N08S2L-07, IPB80N08S2L07ATMA1 offers superior thermal performance in SMD layouts and automotive compliance; versus IPB80N06S4-05, it trades 15 V headroom and AEC-Q101 for slightly higher R_DS(on), making it the preferred choice for ruggedized 24 V vehicle subsystems.

Availability

IPB80N08S2L07ATMA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor drives, and telecom power supply designs requiring stable component supply, long lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for IPB80N08S2L07ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™ 2nd generation power transistor product line, engineered specifically for high-current, high-efficiency switching in automotive and industrial 12–48 V power systems.

FAQ

What is the maximum allowable gate-source voltage for IPB80N08S2L07ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this rating risks permanent gate oxide damage. Recommended gate drive is 10 V for full enhancement, with 4.5 V sufficient for logic-level turn-on due to V_GS(th) range of 1.2–2.0 V. Gate driver circuits must include clamping or limiting to prevent overshoot during fast switching.

Does IPB80N08S2L07ATMA1 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and suppress ringing. For 80 A switching at 100 kHz, a 1.1 Ω resistor is validated in the datasheet for V_DD = 60 V, I_D = 80 A conditions. Lower values increase switching speed but risk shoot-through; higher values reduce EMI but raise switching losses. Layout-dependent parasitic inductance also influences optimal value.

Can IPB80N08S2L07ATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (see Fig. 9) enables inherent current sharing. Parallel operation requires matched layout symmetry, identical gate drive paths, and thermal coupling via shared heatsink or copper area. Derating to 70–75 A per device is advised to account for parametric spread and thermal imbalance in production systems.

Is the drain-source breakdown voltage tested per unit, or is it a design specification?

V_(BR)DSS = 75 V is a guaranteed minimum parameter tested on every production lot per AEC-Q101 requirements. Individual units are sampled for 100% avalanche testing (E_AS), but V_(BR)DSS is verified statistically using wafer-level and packaged-device sampling plans defined in Infineon's quality management system.

IPB80N08S2L07ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 233 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N08S2L07ATMA1 FAQ

1.How can I place an order for IPB80N08S2L07ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N08S2L07ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N08S2L07ATMA1 reliable?

The price and inventory of IPB80N08S2L07ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N08S2L07ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB80N08S2L07ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N08S2L07ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N08S2L07ATMA1?

IPB80N08S2L07ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N08S2L07ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N08S2L07ATMA1?

For technical support, including IPB80N08S2L07ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N08S2L07ATMA1 requirements.

6.How does Aetrix verify that IPB80N08S2L07ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB80N08S2L07ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N08S2L07ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB80N08S2L07ATMA1?

All IPB80N08S2L07ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N08S2L07ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N08S2L07ATMA1 part is unused and in its original packaging.

Return procedure for IPB80N08S2L07ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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