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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N08S406ATMA1

Name: IPB80N08S406ATMA1
Brand: Infineon Technologies
SKU: IPB80N08S406ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N08S406ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N08S406ATMA1.pdf

Description:: MOSFET N-CH 80V 80A TO263-3

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Product details

Overview

IPB80N08S406ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PG-TO263-3-2 package, rated for 80 V V_DS, 5.5 mΩ R_DS(on) (max) at 10 V V_GS, and 80 A continuous drain current at T_C = 25 °C. It delivers high-current switching in automotive powertrain control modules, battery disconnect units, and 48 V mild-hybrid DC/DC converters.

For engineers reviewing the IPB80N08S406ATMA1 datasheet, IPB80N08S406ATMA1 pinout, IPB80N08S406ATMA1 application, or IPB80N08S406ATMA1 equivalent, key selection criteria include its 1.0 K/W junction-to-case thermal resistance, 100% avalanche-tested ruggedness, 175 °C maximum operating temperature, and SMD-optimized thermal performance on 6 cm² PCB copper area.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology to achieve low R_DS(on) × Q_g figure-of-merit for high-efficiency hard-switching in automotive 12 V and 48 V systems. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS-level drive compatibility while maintaining noise immunity.

The integrated body diode supports synchronous rectification and freewheeling with 0.9–1.3 V forward voltage at 80 A and exhibits 90 ns reverse recovery time under defined test conditions (V_R = 40 V, I_F = 50 A, di/dt = 100 A/µs), enabling fast commutation in bidirectional power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage compatible with 48 V nominal automotive bus systems with 100 % margin over ISO 7637-2 pulse 5a.
R_DS(on) max	5.5 mΩ at V_GS = 10 V, T_j = 25 °C - Enables <1.5 W conduction loss at 80 A, critical for thermally constrained engine bay layouts.
I_D continuous	80 A at T_C = 25 °C - Supports high-current load switching without external heatsink in moderate airflow environments.
E_AS	270 mJ at I_D = 40 A - Confirmed single-pulse avalanche energy rating ensures reliable operation during inductive load turn-off transients.
R_thJC	1.0 K/W - Enables direct thermal coupling to chassis or heatsink, simplifying thermal design for automotive-grade reliability.
Q_g total	52–70 nC - Defines gate drive power requirement and switching speed trade-off in 100–500 kHz DC/DC applications.

Pinout & Package

IPB80N08S406ATMA1 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with isolated tab. The package features a thermally enhanced drain-connected copper leadframe and RoHS-compliant matte tin plating.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects directly to PCB ground plane for minimal loop inductance in high-di/dt switching.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <100 nA leakage; driven via 3.3 V or 5 V logic with series resistor for dV/dt control.
Pin 3 (Drain)	Power output / High-side switch node	Internally connected to exposed metal tab; must be soldered to ≥6 cm² copper pour for thermal and electrical integrity.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive power electronics per stress test requirements including HTOL, TC, HTRB, and UHAST.
100 % avalanche tested	Every unit undergoes single-pulse avalanche stress at I_AS = 75 A, ensuring field-reliable energy handling capability.
MSL1 rating	Compatible with standard 260 °C peak reflow profile, eliminating moisture sensitivity concerns in automated SMT assembly.
175 °C operating temperature	Enables placement near heat sources (e.g., inverters, DC/DC converters) without derating in under-hood applications.

Applications

Automotive Battery Disconnect Unit

48 V Mild-Hybrid DC/DC Converter

Use Scenario: High-side main contactor replacement in 12/48 V dual-battery architectures with active short-circuit protection.

IC Role / Device Role / Timing Role: Power switch controlling battery isolation; operates in on/off mode with <100 µs turn-on delay and <25 ns fall time.

Use Value: 5.5 mΩ R_DS(on) reduces standby power loss to <350 mW at 80 A, extending auxiliary battery life during vehicle sleep mode.

Use Scenario: Primary-side synchronous rectifier in phase-shifted full-bridge topology converting 48 V to 12 V for ADAS ECUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier; switched at 200 kHz with gate plateau voltage of 5.2 V for clean Miller region control.

Use Value: 1.0 K/W R_thJC allows direct mounting to aluminum heatsink, maintaining T_j < 135 °C at full load without forced air cooling.

Engine Control Unit (ECU) Load Driver

Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: Driving high-current solenoids and fuel injectors in diesel ECU designs requiring >80 A peak current capability.

IC Role / Device Role / Timing Role: Low-side driver with integrated body diode; handles inductive kickback during 10 ms pulse-width modulated actuation.

Use Value: 270 mJ E_AS rating absorbs stored inductor energy without clamping circuitry, reducing BOM count and board space.

Use Scenario: Half-bridge leg in three-phase EPS motor inverter, operating at 10–20 kHz PWM with regenerative braking.

IC Role / Device Role / Timing Role: High-current phase switch; leverages 320 A pulsed drain current rating for torque surge support during steering assist.

Use Value: 90 ns t_rr and 60 nC Q_rr minimize diode reverse recovery losses, improving inverter efficiency by ~1.2 % at 15 kHz switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N08S4-06	Same die, TO-220-3-1 through-hole package; R_thJA = 62 K/W (leaded), no SMD thermal pad.	Suitable for prototyping, lower-volume industrial SMPS where manual assembly and larger heatsinks are acceptable.	Select when board-level reflow is unavailable or mechanical retention is required over thermal performance.
IPB80N08S4-06R	Same PG-TO263-3-2 package but with reduced R_DS(on) (4.7–5.5 mΩ typ/max); identical pinout and footprint.	Better suited for high-efficiency 48 V systems targeting <1 W conduction loss at 80 A, e.g., next-gen ADAS domain controllers.	Choose for new designs prioritizing lowest possible conduction loss and thermal margin, accepting minor cost premium.

Compared with IPP80N08S4-06 and IPB80N08S4-06R, the IPB80N08S406ATMA1 offers optimal balance of SMD manufacturability, automotive qualification, and thermal performance-making it preferred for production-grade 48 V automotive power modules where reflow compatibility and 175 °C operation are mandatory.

Availability

IPB80N08S406ATMA1 is available at Aetrix Electronics and suitable for automotive battery management systems, 48 V DC/DC converters, and electric power steering motor drives requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPB80N08S406ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This part belongs to the OptiMOS™-T2 product line, engineered specifically for high-current, high-temperature automotive power switching applications demanding AEC-Q101 compliance and robust avalanche performance.

FAQ

What is the maximum allowable gate-source voltage for IPB80N08S406ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation above +15 V or below −10 V risks permanent gate oxide damage. Recommended drive range is 0 V to 10 V for standard logic-level control, with 5.2 V gate plateau voltage ensuring stable Miller region transition during switching.

Does IPB80N08S406ATMA1 require a gate resistor, and if so, what value is recommended?

Yes-a series gate resistor is required to dampen ringing and control dV/dt. For 80 A switching at 200 kHz, a 5.6 Ω resistor is typical; values between 3.3 Ω and 10 Ω balance switching speed against EMI and gate driver stress. Lower values increase peak gate current and risk overshoot.

How does the body diode performance compare to discrete Schottky diodes in freewheeling applications?

The integrated body diode has V_SD = 0.9–1.3 V at 80 A and t_rr = 90 ns, making it suitable for non-synchronous freewheeling. While less efficient than 0.5 V Schottky diodes, its co-packaged integration eliminates layout parasitics and reduces component count-critical in space-constrained automotive modules.

Is IPB80N08S406ATMA1 suitable for use in linear mode (e.g., electronic load or analog regulator)?

No-it is optimized for switching operation only. Linear mode operation exceeds safe operating area limits due to limited power dissipation (150 W at T_C = 25 °C) and thermal instability at partial V_DS/I_D combinations. Use dedicated linear MOSFETs or bipolar transistors for analog regulation.

IPB80N08S406ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 90µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N08S406ATMA1 FAQ

1.How can I place an order for IPB80N08S406ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N08S406ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N08S406ATMA1 reliable?

The price and inventory of IPB80N08S406ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N08S406ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB80N08S406ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N08S406ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N08S406ATMA1?

IPB80N08S406ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N08S406ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N08S406ATMA1?

For technical support, including IPB80N08S406ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N08S406ATMA1 requirements.

6.How does Aetrix verify that IPB80N08S406ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB80N08S406ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N08S406ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB80N08S406ATMA1?

All IPB80N08S406ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N08S406ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N08S406ATMA1 part is unused and in its original packaging.

Return procedure for IPB80N08S406ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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