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Infineon Technologies IPB80P03P405ATMA1

Part No.:
IPB80P03P405ATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIPB80P03P405ATMA1.pdf
Description:
MOSFET P-CH 30V 80A TO263-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,811

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Product details

Overview

IPB80P03P405ATMA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET rated for -30 V VDS, 4.1–5 mΩ RDS(on) at -10 V VGS and -80 A ID, qualified to AEC-Q101, with 175 °C maximum junction temperature and MSL1 reflow compatibility. It serves as a high-current load switch in automotive body control modules, battery disconnect circuits, and reverse-polarity protection.

For engineers reviewing the IPB80P03P405ATMA1 datasheet, IPB80P03P405ATMA1 pinout, IPB80P03P405ATMA1 application, or IPB80P03P405ATMA1 equivalent, key selection criteria include its -80 A continuous drain rating at TC = 100 °C, 1.1 K/W RthJC, 410 mJ single-pulse avalanche energy, and -1.3 V diode forward voltage at -80 A.

Technical Context

This device operates as a normally-off P-channel power switch with gate threshold voltage between -2.0 V and -4.0 V, enabling robust low-side switching control using standard logic-level drivers. Its optimized charge characteristics-Qg = 100–130 nC, Qgd = 10–20 nC-support fast, low-loss switching in DC-DC converters and motor drive H-bridge high-side configurations.

Thermal design is enabled by its PG-TO263-3-2 package with direct-drain thermal pad and 1.1 K/W junction-to-case resistance. The integrated body diode exhibits trr = 100 ns and Qrr = 80 nC under -100 A/µs di/dt, supporting synchronous rectification and freewheeling in high-frequency power stages.

Key Specifications

ParameterValue and Actual Design Meaning
VDS-30 V - Maximum blocking voltage for 12 V automotive systems with margin against transients.
RDS(on)4.1–5 mΩ @ -10 V VGS, -80 A - Enables <1 W conduction loss at full rated current.
ID (cont.)-80 A @ TC = 100 °C - Sustains high-current loads without derating in compact heatsink designs.
EAS410 mJ - Withstands inductive turn-off energy in solenoid and motor control without failure.
RthJC1.1 K/W - Allows direct thermal coupling to heatsink for high-power density PCB layouts.
Qg100–130 nC - Determines gate driver power requirement and switching speed in 100–500 kHz applications.
VSD-1.3 V @ -80 A - Limits freewheeling loss and heat generation in bidirectional current paths.

Pinout & Package

IPB80P03P405ATMA1 is housed in PG-TO263-3-2 (D²PAK) package with exposed drain pad for thermal and electrical connection. Pin 1: Gate; Pin 2: Source; Pin 3: Drain (tab).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (G)Gate terminalControls channel conduction; requires -10 V for full enhancement; threshold range -2.0 to -4.0 V.
Pin 2 (S)Source terminalReference node for gate drive; connects to system ground or high-side return path.
Pin 3 (D)Drain terminal (exposed tab)High-current output path; electrically and thermally tied to PCB copper pour for cooling.

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive powertrain and chassis applications per stress test requirements.
100% avalanche testedEach unit withstands single-pulse EAS ≥ 410 mJ, ensuring ruggedness in inductive load switching.
MSL1 reflow ratingWithstands peak solder temperatures up to 260 °C without delamination or parametric shift.
175 °C operating temperatureEnables placement near hot components (e.g., engine bay ECUs) without thermal derating.
Low Qgd/Qg ratio~15–20% - Improves switching controllability and reduces Miller-induced shoot-through risk.

Applications

Automotive Body Control Module12 V Battery Disconnect Switch

Use Scenario: Controlling power distribution to lighting, HVAC actuators, and door locks in modern vehicle architectures.

IC Role / Device Role / Timing Role: High-side P-channel switch managing 40–80 A loads with reverse-polarity and short-circuit protection.

Use Value: Eliminates need for external high-side driver ICs due to logic-compatible gate threshold and robust SOA.

Use Scenario: Isolating starter battery from auxiliary systems during cranking or fault conditions.

IC Role / Device Role / Timing Role: Bidirectional current-handling switch with integrated body diode for load dump and jump-start support.

Use Value: Supports >320 A pulsed current and 410 mJ avalanche energy, preventing failure during load dump transients.

Reverse Polarity ProtectionIndustrial DC Power Distribution

Use Scenario: Preventing damage from incorrect battery connection in telematics units and ADAS cameras.

IC Role / Device Role / Timing Role: Low-loss series pass element placed between input connector and downstream regulator.

Use Value: Achieves <0.5 V drop at 80 A due to 4.1 mΩ RDS(on), minimizing heat and voltage sag.

Use Scenario: Managing redundant 24 V DC feeds in factory automation controllers and PLC backplanes.

IC Role / Device Role / Timing Role: Hot-swap and OR-ing controller with fast turn-off (<100 ns fall time) and low thermal impedance.

Use Value: 1.1 K/W RthJC enables stable operation at 80 A with minimal heatsink area on industrial PCBs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-current switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPP80P03P4-05PG-TO220-3-1 package; higher RthJA (62 K/W); identical electrical specs.Limited to lower-power or forced-air-cooled designs due to reduced thermal performance.Select when cost-sensitive TO-220 mounting is preferred and thermal budget allows.
IPI80P03P4-05PG-TO262-3-1 package; same RthJC as IPB80P03P405ATMA1 but no exposed drain pad.Requires additional thermal interface material and mechanical mounting for equivalent cooling.Choose when TO-262 footprint compatibility is required and board-level thermal design accommodates padless layout.

Compared with IPP80P03P4-05 and IPI80P03P4-05, IPB80P03P405ATMA1 delivers superior thermal transfer via its exposed drain pad in D²PAK, enabling higher sustained current in space-constrained automotive modules without external heatsinks.

Availability

IPB80P03P405ATMA1 is available at Aetrix Electronics and suitable for automotive body electronics, battery management systems, and industrial power distribution requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IPB80P03P405ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This part belongs to the OptiMOS™-P2 family of P-channel MOSFETs, engineered specifically for high-efficiency, high-reliability switching in 12 V and 24 V automotive power networks.

FAQ

What is the maximum safe operating temperature for IPB80P03P405ATMA1?

The device supports continuous operation up to +175 °C junction temperature, validated per AEC-Q101 stress testing. At TC = 100 °C, it delivers full -80 A continuous drain current with VGS ≤ -6 V. Derating begins above this case temperature, and thermal design must maintain Tj ≤ 175 °C under worst-case ambient and power dissipation conditions.

Does IPB80P03P405ATMA1 require a negative gate driver?

No - it is a P-channel device that turns on with a gate voltage *lower* than the source, but standard 0 V / -12 V logic or microcontroller outputs can drive it directly. With VGS(th) between -2.0 V and -4.0 V, a -10 V gate-source bias fully enhances the channel, while 0 V gate relative to source ensures full turn-off in high-side configurations.

Can IPB80P03P405ATMA1 be used in synchronous rectification?

Yes - its low RDS(on) (4.1–5 mΩ), fast switching (tf = 20 ns), and well-characterized body diode (trr = 100 ns, Qrr = 80 nC) make it suitable for synchronous rectification in isolated DC-DC converters. However, external gate timing control is required to avoid shoot-through, as the device lacks integrated adaptive dead-time control.

Is the PG-TO263-3-2 package lead-free and RoHS compliant?

Yes - IPB80P03P405ATMA1 is RoHS compliant and uses lead-free terminations. Its MSL1 rating confirms compatibility with standard lead-free reflow profiles peaking at 260 °C, and the package meets JEDEC J-STD-020 moisture sensitivity requirements without dry-packaging or baking prior to assembly.

IPB80P03P405ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:
4V @ 253µA
Gate Charge (Qg) (Max) @ Vgs:
130 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
10300 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
137W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3-2

IPB80P03P405ATMA1 FAQ

1.How can I place an order for IPB80P03P405ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80P03P405ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80P03P405ATMA1 reliable?

The price and inventory of IPB80P03P405ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80P03P405ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB80P03P405ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80P03P405ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80P03P405ATMA1?

IPB80P03P405ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80P03P405ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80P03P405ATMA1?

For technical support, including IPB80P03P405ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80P03P405ATMA1 requirements.

6.How does Aetrix verify that IPB80P03P405ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB80P03P405ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80P03P405ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB80P03P405ATMA1?

All IPB80P03P405ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80P03P405ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80P03P405ATMA1 part is unused and in its original packaging.

Return procedure for IPB80P03P405ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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