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Infineon Technologies IPB80P03P4L04ATMA1
- Part No.:
- IPB80P03P4L04ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IPB80P03P4L04ATMA1.pdf
- Description:
- MOSFET P-CH 30V 80A TO263-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,418
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Product details
Overview
IPB80P03P4L04ATMA1 from Infineon Technologies is a P-channel logic-level enhancement-mode MOSFET in PG-TO263-3-2 package, rated for -30 V VDS, 4.1 mΩ RDS(on) at VGS = -10 V and ID = -80 A, with 100% avalanche tested capability and AEC qualification for automotive reverse battery protection circuits.
For engineers reviewing the IPB80P03P4L04ATMA1 datasheet, IPB80P03P4L04ATMA1 pinout, IPB80P03P4L04ATMA1 application, or IPB80P03P4L04ATMA1 equivalent, key selection criteria include its -80 A continuous drain rating at TC = 100 °C, 1.1 K/W RthJC, -1.5 V typical VGS(th), and SMD-compatible thermal performance on 6 cm² PCB copper area.
Technical Context
This device implements a trench-based OptiMOS®-P2 silicon architecture optimized for low RDS(on) and fast switching in high-current DC power path control. Its gate threshold voltage range (-1.0 to -2.0 V) ensures reliable turn-on with standard 3.3 V/5 V logic drivers.
The MOSFET integrates an intrinsic body diode with 100 ns trr and 80 nC Qrr, enabling efficient freewheeling in reverse polarity protection and load switch topologies where unidirectional blocking and controlled turn-off are required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum drain-source blocking voltage for 12 V/24 V automotive systems with transient margin |
| RDS(on) @ VGS = -10 V | 4.1 mΩ (SMD version) - Enables <1 W conduction loss at 80 A, critical for thermally constrained PCB layouts |
| ID continuous @ TC = 100 °C | -80 A - Sustained current capability matching alternator output and battery fuse ratings |
| EAS | 410 mJ - Confirmed single-pulse avalanche energy supporting load dump transients without failure |
| RthJC | 1.1 K/W - Direct junction-to-case thermal path enabling high-power dissipation with minimal heatsink interface resistance |
| Qg | 125–160 nC - Gate charge defining drive strength requirement for <150 ns total switching time at 3.5 Ω gate resistor |
| VGS(th) | -1.0 to -2.0 V - Logic-level threshold ensuring full enhancement with 3.3 V microcontroller GPIO |
Pinout & Package
IPB80P03P4L04ATMA1 uses the PG-TO263-3-2 surface-mount package with exposed drain pad for thermal and electrical connection. Pin 1 is Source, Pin 2 is Gate, Pin 3 is Drain (tab). The package supports reflow up to 260 °C (MSL1) and operates from -55 °C to +175 °C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Low-side reference node; connects to system ground or battery negative in reverse polarity protection |
| Pin 2 (Gate) | Control input (G) | Logic-level driven node requiring <160 nC total charge; isolated from power path by gate oxide |
| Pin 3 (Drain / Tab) | Power input/output (D) | Exposed copper tab serves as primary drain connection and main thermal path to PCB copper area |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive under-hood applications including engine control modules and body electronics |
| 100% avalanche tested | Each unit subjected to single-pulse EAS stress, guaranteeing robustness against inductive switching faults |
| OptiMOS®-P2 trench technology | Delivers 15% lower RDS(on) vs prior generation while maintaining same die size and thermal footprint |
| RoHS compliant & MSL1 | Lead-free assembly compatible with standard leaded and lead-free reflow profiles up to 260 °C peak |
| Reverse battery protection optimized | Body diode forward voltage ≤1.3 V at -80 A enables low-loss reverse conduction during fault recovery |
Applications
| Automotive Reverse Battery Protection | 12 V/24 V DC Load Switch |
|---|---|
Use Scenario: Prevents damage when vehicle battery is connected with reversed polarity during jump-start or replacement. IC Role / Device Role / Timing Role: High-side P-channel MOSFET placed between battery positive and system input, blocking reverse current flow. Use Value: Eliminates need for series diode, reducing voltage drop from ~0.7 V to <50 mV at 80 A, preserving system efficiency and cold-cranking margin. | Use Scenario: Controlled power-up of infotainment head units, ADAS cameras, and telematics modules after ignition signal. IC Role / Device Role / Timing Role: Power path switch activated by microcontroller GPIO to enable/disable downstream 12 V rail. Use Value: Supports fast turn-on (<200 ns) and soft-start via gate resistor tuning, preventing inrush current spikes into capacitive loads. |
| Industrial Power Supply OR-ing | Redundant Power Distribution |
Use Scenario: Parallel connection of dual 24 V supplies to increase reliability and current capacity in PLC backplanes. IC Role / Device Role / Timing Role: OR-ing FET controlling current direction from each supply to common bus, blocking reverse feed. Use Value: Achieves <10 mΩ effective forward impedance per path, minimizing insertion loss and thermal rise versus Schottky diodes. | Use Scenario: Fault-tolerant power routing in railway signaling cabinets where uninterrupted operation is mandatory. IC Role / Device Role / Timing Role: Dual redundant MOSFETs configured in parallel with independent gate control for hot-swap capability. Use Value: With 175 °C max operating temperature and 1.1 K/W RthJC, sustains full 80 A load during single-FET derating events without thermal shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-current load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP80P03P4L-04 | PG-TO220-3-1 through-hole package; identical RDS(on), VDS, and avalanche rating | Requires drilled mounting and heatsink screw; unsuitable for automated SMT lines | Select for prototyping, low-volume industrial controls, or legacy board designs with TO-220 footprints |
| IPI80P03P4L-04 | PG-TO262-3-1 package; same silicon but different leadframe geometry and thermal resistance profile | Higher RthJA (62 K/W) on minimal footprint vs 40 K/W for IPB version on 6 cm² copper | Prefer when mechanical clearance constraints prevent TO263 tab soldering but SMT assembly is still required |
Compared with IPP80P03P4L-04 and IPI80P03P4L-04, IPB80P03P4L04ATMA1 delivers superior thermal performance in SMT production environments due to its optimized PG-TO263-3-2 drain-tab layout and verified 40 K/W RthJA on 6 cm² PCB copper, making it the preferred choice for high-reliability automotive power distribution.
Availability
IPB80P03P4L04ATMA1 is available at Aetrix Electronics and suitable for automotive reverse battery protection, 12 V/24 V DC load switching, and industrial OR-ing applications requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.
Supply support for IPB80P03P4L04ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to ISO/TS 16949.
This part belongs to the OptiMOS®-P2 product line, engineered specifically for high-efficiency, high-reliability P-channel power switching in automotive and industrial 12 V/24 V systems where low RDS(on), avalanche ruggedness, and AEC qualification are mandatory.
FAQ
What is the maximum allowable gate-source voltage for IPB80P03P4L04ATMA1?
The absolute maximum VGS is -16 V, with recommended operating range from 0 V to -10 V. Exceeding -16 V risks irreversible gate oxide breakdown. For logic-level drive, -4.5 V provides full enhancement with RDS(on) ≤ 6.7 mΩ, making 3.3 V MCU outputs sufficient when buffered.
Does IPB80P03P4L04ATMA1 require a gate resistor, and if so, what value is recommended?
Yes - a gate resistor is required to control dV/dt and prevent oscillation. For 80 A switching with 3.5 Ω driver impedance (per datasheet test condition), a 10 Ω series resistor yields ~150 ns turn-on delay and <20 ns ringing suppression. Lower values increase EMI risk; higher values slow switching and raise dynamic losses.
Can IPB80P03P4L04ATMA1 be used in parallel configurations?
Yes - its negative temperature coefficient for RDS(on) enables inherent current sharing. Layout must ensure matched trace inductance and thermal coupling; use Kelvin source connections and symmetric gate routing. Derate total current by 15% for two devices to maintain safe junction temperature under worst-case ambient conditions.
Is the body diode in IPB80P03P4L04ATMA1 suitable for continuous freewheeling?
No - the body diode is rated for pulsed forward current only (IS,pulse = -320 A). For continuous freewheeling, external Schottky or SiC diodes are required. The internal diode's 100 ns trr and 80 nC Qrr make it suitable for brief commutation events, not sustained conduction above 10% duty cycle.
IPB80P03P4L04ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.1mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 253µA
- Gate Charge (Qg) (Max) @ Vgs:
- 160 nC @ 10 V
- Vgs (Max):
- +5V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 11300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 137W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3-2
IPB80P03P4L04ATMA1 FAQ
1.How can I place an order for IPB80P03P4L04ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPB80P03P4L04ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPB80P03P4L04ATMA1 reliable?
The price and inventory of IPB80P03P4L04ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80P03P4L04ATMA1 is usually 5 days.
3.What payment methods are accepted for IPB80P03P4L04ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80P03P4L04ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPB80P03P4L04ATMA1?
IPB80P03P4L04ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPB80P03P4L04ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPB80P03P4L04ATMA1?
For technical support, including IPB80P03P4L04ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80P03P4L04ATMA1 requirements.
6.How does Aetrix verify that IPB80P03P4L04ATMA1 is sourced from the original manufacturer or authorized distributors?
All IPB80P03P4L04ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80P03P4L04ATMA1 meets industry standards.
7.What is the process for return or replacement of IPB80P03P4L04ATMA1?
All IPB80P03P4L04ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80P03P4L04ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPB80P03P4L04ATMA1 part is unused and in its original packaging.
Return procedure for IPB80P03P4L04ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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