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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80P03P4L07ATMA1

Name: IPB80P03P4L07ATMA1
Brand: Infineon Technologies
SKU: IPB80P03P4L07ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80P03P4L07ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80P03P4L07ATMA1.pdf

Description:: MOSFET P-CH 30V 80A TO263-3

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Inventory:7,196

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Product details

Overview

IPB80P03P4L07ATMA1 from Infineon Technologies is a P-channel logic-level enhancement-mode MOSFET in PG-TO263-3-2 package, rated for −30 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 5.6–6.9 mΩ R_DS(on) at V_GS = −10 V. It is AEC-qualified, 100% avalanche tested, and designed specifically for reverse battery protection in automotive power distribution systems.

For engineers reviewing the IPB80P03P4L07ATMA1 datasheet, IPB80P03P4L07ATMA1 pinout, IPB80P03P4L07ATMA1 application, or IPB80P03P4L07ATMA1 equivalent, key selection criteria include its −30 V breakdown voltage, low R_DS(on) under logic-level gate drive (−4.5 V), 175 °C maximum junction temperature, and MSL1 reflow compatibility-critical for automotive PCB assembly and high-reliability power path control.

Technical Context

This OptiMOS®-P2 device operates as a high-current, low-side P-channel switch with integrated body diode optimized for unidirectional reverse-polarity protection. Its gate threshold voltage range (−1.0 to −2.0 V) ensures robust turn-on with standard 3.3 V/5 V logic controllers, while its 1.7 K/W junction-to-case thermal resistance supports high-power dissipation in compact layouts.

The MOSFET features fully characterized dynamic parameters including 4400–5700 pF input capacitance, 48–96 pF reverse transfer capacitance, and 63–80 nC total gate charge-enabling precise switching loss estimation in 12 V/24 V automotive battery management circuits operating up to 100 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−30 V: Maximum reverse-battery voltage it blocks without breakdown in automotive 12 V/24 V systems.
R_DS(on) @ V_GS = −10 V	5.6–6.9 mΩ: Enables ≤5.5 W conduction loss at 80 A, reducing heatsink requirements in space-constrained modules.
I_D (continuous)	−80 A @ T_C = 25 °C: Supports high-current load paths such as engine control units and ADAS domain controllers.
E_AS	135 mJ (I_D = −40 A): Confirmed single-pulse avalanche energy rating for transient overvoltage survival during load dump events.
T_j(max)	+175 °C: Allows operation in under-hood environments without derating in ambient temperatures up to +125 °C.
Q_g	63–80 nC: Determines gate driver current demand and switching speed in PWM-controlled protection circuits.
V_GS(th)	−1.0 to −2.0 V: Ensures reliable turn-on with microcontroller GPIOs and enables fast response to polarity fault detection signals.

Pinout & Package

IPB80P03P4L07ATMA1 uses the PG-TO263-3-2 surface-mount package (D²PAK), with exposed drain pad for thermal performance. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives logic-level gate drive (−4.5 V to −10 V); low input capacitance enables fast switching with minimal driver overhead.
Pin 2 (Drain)	High-current output node	Connected to battery positive; large copper tab provides <1.7 K/W thermal path to PCB heatsink for sustained 80 A operation.
Pin 3 (Source)	Reference node / return path	Bonded to system ground; defines gate-source voltage reference and carries full load current back to load side.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements including HTOL, TC, and HTRB.
100% avalanche tested	Each unit passes single-pulse E_AS screening at 135 mJ, ensuring field reliability against inductive kick and load dump transients.
Logic-level gate drive	Turns on fully at V_GS = −4.5 V, eliminating need for gate boosters in 3.3 V MCU-based protection modules.
MSL1 reflow rating	Suitable for lead-free reflow up to 260 °C peak, supporting automated SMT assembly in Tier-1 automotive electronics manufacturing.
Integrated body diode	Optimized for low V_SD (≤1.3 V @ −80 A) and fast t_rr (50 ns), enabling efficient freewheeling in reverse-polarity fault conditions.

Applications

Automotive Reverse Battery Protection

12 V/24 V Power Distribution Module

Use Scenario: Installed between vehicle battery and ECU to block reverse polarity connection during service or jump-start errors.

IC Role / Device Role / Timing Role: Low-side P-channel MOSFET acting as fail-safe series switch; activated only when battery polarity is correct.

Use Value: Prevents catastrophic damage to downstream ASICs and microcontrollers by blocking >30 V reverse voltage before system power-up.

Use Scenario: Used in centralized power distribution units (PDUs) to isolate sub-systems like lighting, HVAC, and infotainment from main battery rail.

IC Role / Device Role / Timing Role: High-current electronic fuse replacement; controlled via CAN/LIN signal for programmable overcurrent and short-circuit response.

Use Value: Enables hot-swap capability and diagnostics with <10 ms fault clearing, replacing mechanical fuses and relays.

Engine Control Unit (ECU) Input Protection

ADAS Domain Controller Power Path

Use Scenario: Protects sensitive analog front-ends and ADC references in engine control modules from reverse battery and load dump transients.

IC Role / Device Role / Timing Role: Primary reverse-polarity barrier upstream of LDOs and DC-DC converters; operates continuously during engine runtime.

Use Value: Maintains <1.7 K/W thermal resistance to sustain 80 A at 175 °C junction temperature, preventing thermal shutdown during extended idling.

Use Scenario: Integrated into radar and camera domain controllers to safeguard power inputs from battery faults in autonomous driving platforms.

IC Role / Device Role / Timing Role: High-reliability power switch in ASIL-B compliant subsystems; monitored via external watchdog and current sense feedback.

Use Value: Delivers 135 mJ avalanche robustness and AEC-Q101 qualification required for ISO 26262 functional safety compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel reverse-battery protection applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80P03P4L-07	Same die, TO-220-3-1 through-hole package; higher R_thJA (62 K/W) vs. 40 K/W for SMD version.	Preferred for prototyping or low-volume manual assembly; unsuitable for high-density automotive PCBs.	Select when mechanical mounting stability outweighs thermal performance and board space constraints.
IPB80P03P4L-07	Identical electrical specs and PG-TO263-3-2 package; differs only in tape-and-reel packaging (ATMA1 vs. no suffix).	No functional difference; ATMA1 denotes AEC-compliant reel packaging per J-STD-020 MSL1.	Choose IPB80P03P4L07ATMA1 for production line compatibility with automated pick-and-place equipment.

Compared with IPP80P03P4L-07 and IPB80P03P4L-07, the IPB80P03P4L07ATMA1 offers identical silicon performance but guarantees MSL1 reflow readiness and traceable AEC-Q101 lot documentation-essential for Tier-1 automotive production audits and zero-defect supply chain requirements.

Availability

IPB80P03P4L07ATMA1 is available at Aetrix Electronics and suitable for automotive reverse battery protection, 12 V/24 V power distribution modules, and ADAS domain controller power path designs requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPB80P03P4L07ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and fabrication facilities.

This device belongs to the OptiMOS®-P2 product line, engineered specifically for high-efficiency, high-reliability P-channel switching in automotive power systems where reverse polarity resilience and thermal robustness are mandatory.

FAQ

Is IPB80P03P4L07ATMA1 pin-compatible with IPP80P03P4L-07?

No. IPB80P03P4L07ATMA1 uses PG-TO263-3-2 (D²PAK) surface-mount packaging, while IPP80P03P4L-07 uses PG-TO220-3-1 through-hole packaging. Their footprints, thermal vias, and mounting methods are incompatible-PCB layout redesign is required for substitution.

What is the maximum allowable gate-source voltage during transient conditions?

The absolute maximum V_GS is −16 V. During load dump or ESD events, clamping circuits must limit gate voltage to this level; exceeding it risks permanent oxide damage. The device's −16 V rating exceeds ISO 7637-2 Pulse 5a requirements (−110 V battery clamp), but gate protection remains essential.

Does IPB80P03P4L07ATMA1 require a gate resistor for safe switching?

Yes. A 3.5 Ω gate resistor is specified in the datasheet for turn-off delay and dV/dt control. Omitting it increases risk of oscillation and shoot-through in parallel configurations; values between 2.2 Ω and 10 Ω balance switching speed and EMI in automotive 12 V systems.

Can this MOSFET be used in bidirectional current applications?

No. As a P-channel enhancement-mode device with an integrated body diode oriented for forward conduction from source to drain, it conducts current unidirectionally in reverse-battery protection mode. Bidirectional operation would require complementary N/P pairs or dedicated bidirectional switches.

IPB80P03P4L07ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.9mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 130µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: +5V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 5700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 88W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80P03P4L07ATMA1 FAQ

1.How can I place an order for IPB80P03P4L07ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80P03P4L07ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80P03P4L07ATMA1 reliable?

The price and inventory of IPB80P03P4L07ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80P03P4L07ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB80P03P4L07ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80P03P4L07ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80P03P4L07ATMA1?

IPB80P03P4L07ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80P03P4L07ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80P03P4L07ATMA1?

For technical support, including IPB80P03P4L07ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80P03P4L07ATMA1 requirements.

6.How does Aetrix verify that IPB80P03P4L07ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB80P03P4L07ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80P03P4L07ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB80P03P4L07ATMA1?

All IPB80P03P4L07ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80P03P4L07ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80P03P4L07ATMA1 part is unused and in its original packaging.

Return procedure for IPB80P03P4L07ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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