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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80P03P4L07ATMA2

Name: IPB80P03P4L07ATMA2
Brand: Infineon Technologies
SKU: IPB80P03P4L07ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80P03P4L07ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80P03P4L07ATMA2.pdf

Description:: MOSFET_(20V 40V) PG-TO263-3

Quantity:: RFQ Add To RFQ list

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Inventory:3,322

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Product details

Overview

IPB80P03P4L07ATMA2 from Infineon Technologies is a P-channel logic-level enhancement-mode MOSFET designed for reverse battery protection in automotive and industrial power systems. It features -30 V V_DS, 5.6–6.9 mΩ R_DS(on) at V_GS = -10 V and I_D = -80 A, 175 °C maximum junction temperature, AEC-Q101 qualification, and 100% single-pulse avalanche tested to 135 mJ. It is used in 12 V/24 V vehicle power distribution modules.

For engineers reviewing the IPB80P03P4L07ATMA2 datasheet, IPB80P03P4L07ATMA2 pinout, IPB80P03P4L07ATMA2 application, or IPB80P03P4L07ATMA2 equivalent, key selection criteria include R_DS(on) at -4.5 V gate drive, thermal resistance (R_thJC = 1.7 K/W), avalanche ruggedness, AEC qualification status, and TO-263-3 package compatibility with high-current PCB layouts.

Technical Context

This device operates as a high-side reverse polarity protection switch in DC power rails, leveraging its logic-level gate threshold (V_GS(th) = -1.0 to -2.0 V) to enable direct microcontroller control without level-shifting. Its low R_DS(on) minimizes conduction loss during normal operation, while robust avalanche capability ensures survivability during load dump or inductive switching events.

The MOSFET uses Infineon's OptiMOS™-P2 silicon process optimized for P-channel performance in automotive-grade packages. Thermal design is enabled by its 1.7 K/W junction-to-case resistance and MSL1-rated reflow compatibility up to 260 °C, supporting automated SMT assembly on thermally enhanced PCBs with ≥6 cm² copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum drain-source blocking voltage for 12 V/24 V automotive battery systems
R_DS(on) @ V_GS = -10 V	5.6–6.9 mΩ - Enables ≤50 mW conduction loss at 80 A continuous current
R_DS(on) @ V_GS = -4.5 V	8.0–12.3 mΩ - Supports direct MCU GPIO drive with <100 mW loss at 40 A
I_D (continuous)	-80 A @ T_C = 25 °C - Rated for high-current reverse-battery protection in engine control units
E_AS	135 mJ - Single-pulse avalanche energy rating ensures reliability during load dump transients
R_thJC	1.7 K/W - Enables efficient heat transfer to heatsink or copper plane in TO-263-3 package
T_j(max)	+175 °C - Supports operation in under-hood environments without derating at full current

Pinout & Package

IPB80P03P4L07ATMA2 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with isolated drain tab, optimized for high-current PCB thermal management. The package supports solder-reflow per MSL1 (260 °C peak).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (P-channel)	Connected to battery positive in reverse-protection configuration; reference node for gate drive
Pin 2 (Gate)	Control input	Logic-level compatible: fully enhanced at -4.5 V; threshold -1.0 to -2.0 V
Pin 3 (Drain)	Power output / Load connection	High-current path to load; electrically tied to exposed copper tab for thermal conduction

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and body electronics per stress test requirements
100% avalanche tested	Each unit screened to 135 mJ single-pulse energy, ensuring field reliability under surge conditions
Logic-level gate drive	V_GS(th) range (-1.0 to -2.0 V) enables direct interface with 3.3 V/5 V MCUs without gate driver IC
MSL1 reflow rating	Compatible with standard lead-free SMT processes up to 260 °C peak, reducing manufacturing risk
RoHS compliant & halogen-free	Meets EU Directive 2011/65/EU and IPC-1752A material declaration requirements

Applications

Automotive Reverse Battery Protection

Industrial 24 V Power Supply Input Stage

Use Scenario: Prevents damage to ECUs and infotainment systems when vehicle battery is connected with reversed polarity.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as active polarity guard in main power rail before DC-DC converters.

Use Value: Eliminates need for series diode, reducing voltage drop from ~0.7 V to <50 mV at 80 A, improving system efficiency and thermal margin.

Use Scenario: Protects programmable logic controllers (PLCs) and HMIs from incorrect field wiring in factory automation cabinets.

IC Role / Device Role / Timing Role: Standalone reverse-polarity switch placed between 24 V DIN-rail supply and downstream SMPS input.

Use Value: Withstands repeated 125 V/50 ms load dump pulses per ISO 7637-2 due to 135 mJ avalanche rating and 175 °C T_j rating.

Truck & Bus Body Control Module

Off-Highway Equipment Power Management

Use Scenario: Secures power entry in multi-voltage (12 V/24 V) commercial vehicle lighting and HVAC control units.

IC Role / Device Role / Timing Role: Primary reverse-polarity protection element upstream of fuse and transient suppressors.

Use Value: -80 A continuous rating allows integration into compact modules without external heatsinks, saving board space vs. discrete diode solutions.

Use Scenario: Ensures safe power-up in construction and agricultural machinery with long cable runs and high EMI exposure.

IC Role / Device Role / Timing Role: Fault-tolerant input stage in battery-powered telematics gateways operating across -40 °C to +85 °C ambient.

Use Value: MSL1 reflow compatibility and 175 °C T_j support extended service life in sealed, non-ventilated enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse battery protection applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80P03P4L-07	Same die, TO-220-3-1 through-hole package; R_thJA ≈ 62 K/W (no PCB copper benefit)	Better suited for prototyping or low-volume manual assembly; lacks SMT thermal scalability	Select when board-level reflow is unavailable or mechanical mounting requires screw terminals
IPI80P03P4L-07	Same die, TO-262-3-1 (I²PAK) package; R_thJC identical but lower creepage/clearance than TO-263	Preferred where higher isolation voltage (>500 V) is not required and cost-per-unit is prioritized	Choose for cost-sensitive industrial designs where thermal performance matches TO-263 but footprint is less constrained

Compared with IPP80P03P4L-07 and IPI80P03P4L-07, IPB80P03P4L07ATMA2 delivers superior thermal performance in SMT production via its TO-263-3 package-enabling 20% higher sustained current density on standard FR4 PCBs with 6 cm² copper area, critical for space-constrained automotive modules.

Availability

IPB80P03P4L07ATMA2 is available at Aetrix Electronics and suitable for automotive ECU power management, industrial PLC input protection, and off-highway telematics systems requiring stable component supply across extended product lifecycles.

Supply support for IPB80P03P4L07ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-P2 P-channel MOSFET product line, engineered specifically for high-efficiency reverse polarity protection and high-side switching in harsh-environment automotive and industrial power systems.

FAQ

What is the maximum gate-source voltage rating for IPB80P03P4L07ATMA2?

The absolute maximum gate-source voltage is -16 V (negative polarity, as it is a P-channel device). Operation beyond this rating risks permanent gate oxide damage. Recommended gate drive stays within -4.5 V to -10 V for optimal R_DS(on) and switching speed, with transient spikes clamped using Zener diodes if needed.

Does IPB80P03P4L07ATMA2 require a gate resistor in reverse battery protection circuits?

Yes-a gate resistor (typically 10–100 Ω) is recommended to dampen ringing during turn-on/turn-off and limit peak gate current from MCU GPIOs. This improves EMI behavior and prevents oscillation, especially when driving large C_iss (4400–5700 pF) at high dV/dt rates in noisy automotive environments.

Can IPB80P03P4L07ATMA2 be used in parallel configurations?

Yes, but only with careful layout: matched gate drive paths, symmetrical source inductance, and thermal coupling to ensure current sharing. Its positive R_DS(on) temperature coefficient (R_DS(on) increases with T_j) supports inherent current balancing, though gate resistance matching remains critical to avoid shoot-through during transitions.

Is the drain tab of IPB80P03P4L07ATMA2 electrically isolated?

No-the drain is internally connected to the exposed copper tab in the PG-TO263-3-2 package. This tab must be routed to the drain net on the PCB and thermally bonded to a heatsink or copper pour. Electrical isolation requires insulating hardware or a separate isolated heatsink solution.

IPB80P03P4L07ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.9mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 130µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: +5V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 5700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 88W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80P03P4L07ATMA2 FAQ

1.How can I place an order for IPB80P03P4L07ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80P03P4L07ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80P03P4L07ATMA2 reliable?

The price and inventory of IPB80P03P4L07ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80P03P4L07ATMA2 is usually 5 days.

3.What payment methods are accepted for IPB80P03P4L07ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80P03P4L07ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80P03P4L07ATMA2?

IPB80P03P4L07ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80P03P4L07ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80P03P4L07ATMA2?

For technical support, including IPB80P03P4L07ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80P03P4L07ATMA2 requirements.

6.How does Aetrix verify that IPB80P03P4L07ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPB80P03P4L07ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80P03P4L07ATMA2 meets industry standards.

7.What is the process for return or replacement of IPB80P03P4L07ATMA2?

All IPB80P03P4L07ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80P03P4L07ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80P03P4L07ATMA2 part is unused and in its original packaging.

Return procedure for IPB80P03P4L07ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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