Infineon Technologies IPB80P04P405ATMA1

Overview

IPB80P04P405ATMA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET rated for -40 V V_DS, 4.9 mΩ R_DS(on) at -10 V V_GS and -80 A I_D, qualified to AEC standards for automotive power switching in high-side load control, battery disconnect, and reverse polarity protection circuits.

For engineers reviewing the IPB80P04P405ATMA1 datasheet, IPB80P04P405ATMA1 pinout, IPB80P04P405ATMA1 application, or IPB80P04P405ATMA1 equivalent, key selection factors include its 1.2 K/W R_thJC, 100% avalanche-tested ruggedness, -55 °C to +175 °C operating range, and PG-TO263-3-2 surface-mount package with exposed drain pad for thermal performance.

Technical Context

This device operates as a normally-off P-channel power switch with gate threshold voltage between -2.0 V and -4.0 V, enabling direct interface with 3.3 V/5 V logic controllers when used with appropriate level-shifting or gate driver circuitry. Its low 4.9 mΩ on-resistance (SMD version) and 116–151 nC total gate charge support efficient high-current DC switching up to 80 A continuous.

The MOSFET features integrated body diode with -1.3 V V_SD at -80 A and 61 ns t_rr, optimized for freewheeling and synchronous rectification in buck converters and motor H-bridge topologies. Thermal design is enabled by MSL1 reflow compatibility and 175 °C maximum junction temperature rating.

Key Specifications

Pinout & Package

IPB80P04P405ATMA1 uses the PG-TO263-3-2 package: a surface-mount variant of TO-263 with three leads (Drain, Source, Gate), thermally enhanced copper-exposed drain pad on underside, and MSL1 reflow compatibility up to 260 °C peak.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive power switching applications.

Compared with IPP80P04P4L-05 and IPB80P04P4-05, IPB80P04P405ATMA1 delivers superior thermal performance in space-constrained automotive modules due to its PG-TO263-3-2 footprint and MSL1 reflow rating, while maintaining identical electrical behavior and AEC-Q101 compliance.

Availability

IPB80P04P405ATMA1 is available at Aetrix Electronics and suitable for automotive body electronics, battery management systems, and industrial power supplies requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for IPB80P04P405ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This part belongs to the OptiMOS™-P2 P-channel MOSFET product line, engineered specifically for high-efficiency, high-reliability automotive power switching in 12 V and 24 V systems with stringent thermal and ruggedness requirements.

FAQ

What is the maximum junction temperature and how does it impact thermal design?

The IPB80P04P405ATMA1 has a maximum junction temperature of +175 °C, allowing operation in under-hood environments. With R_thJC = 1.2 K/W, a 100 °C temperature rise above case requires ~83 W of power dissipation-well within its 125 W rating at T_C = 25 °C. Designers must ensure adequate PCB copper area and heatsinking to maintain T_j below limit during peak load.

Is this MOSFET suitable for linear mode operation?

No-this device is optimized for switching operation only. Its Safe Operating Area (SOA) curve shows limited linear region capability, and prolonged operation in the ohmic region risks thermal runaway due to positive temperature coefficient of R_DS(on). It must be operated in saturation (fully on) or cutoff (fully off), not in the active region.

How does the body diode performance compare to external Schottky diodes?

The integrated body diode has V_SD = -1.3 V at -80 A and t_rr = 61 ns, making it suitable for freewheeling in low-frequency (<100 kHz) applications. While less efficient than low-V_F Schottkys in high-frequency converters, its co-packaged integration eliminates layout parasitics and reduces component count in space-constrained modules.

Does the "ATMA1" suffix indicate any functional difference from IPB80P04P4-05?

No functional difference exists-the ATMA1 suffix denotes tape-and-reel packaging per EIA-481-D standard and MSL1 moisture sensitivity classification for lead-free reflow. Electrically and thermally, it matches IPB80P04P4-05; the suffix reflects packaging and handling specifications only, not die or performance changes.