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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80P04P407ATMA1

Name: IPB80P04P407ATMA1
Brand: Infineon Technologies
SKU: IPB80P04P407ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80P04P407ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80P04P407ATMA1.pdf

Description:: MOSFET P-CH 40V 80A TO263-3

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Product details

Overview

IPB80P04P407ATMA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET optimized for automotive high-side load switching, featuring -40 V V_DS, 5.7 mΩ typical R_DS(on) at -10 V V_GS and -80 A continuous drain current at T_C = 25 °C. It is AEC-Q101 qualified, rated for 175 °C operation, and 100% avalanche tested for robustness in inductive load control.

For engineers reviewing the IPB80P04P407ATMA1 datasheet, IPB80P04P407ATMA1 pinout, IPB80P04P407ATMA1 application, or IPB80P04P407ATMA1 equivalent, key selection criteria include its low R_DS(on) at -10 V gate drive, MSL1 reflow compatibility, integrated body diode with 48 ns t_rr, and thermal resistance of 1.7 K/W (junction-to-case) for high-power automotive power distribution.

Technical Context

This device operates as a normally-off P-channel switch requiring negative gate-source voltage for conduction. Its gate threshold voltage range (-2.0 to -4.0 V) enables reliable turn-on with standard automotive logic-level drivers, while the 68–89 nC total gate charge supports efficient PWM switching up to ~100 kHz in DC-DC and motor control stages.

The MOSFET integrates a fast-recovery body diode (t_rr = 48 ns, Q_rr = 54 nC) and exhibits low output capacitance (C_oss = 1520–2280 pF), reducing switching losses during hard-commutation events in reverse-battery protection and H-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum blocking voltage for 12 V/24 V automotive systems with reverse-battery and load-dump margin
R_DS(on) typ.	5.7 mΩ @ V_GS = -10 V, I_D = -80 A - Enables <1.5 W conduction loss at full rated current
I_D cont.	-80 A @ T_C = 25 °C - Supports high-current solenoid, fan, and lighting loads without external heatsinking
E_AS	31 mJ - Withstands single-pulse inductive energy without failure in relay or motor coil snubbing
t_r/t_f	15 ns / 41 ns - Fast edge rates reduce switching transition time and associated power dissipation
Q_g	68–89 nC - Determines gate driver current requirement (~1–2 A peak for 100 ns turn-on)
R_thJC	1.7 K/W - Enables direct mounting to chassis or heatsink for thermal management in space-constrained modules

Pinout & Package

IPB80P04P407ATMA1 uses the PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal and electrical performance. The three terminals are arranged in standard TO-263 layout: Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain (tab).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives negative voltage relative to source to modulate channel conductivity; requires ≤±20 V rating
Pin 2 (Source)	Reference node	Serves as return path for gate drive and load current; tied to system ground or battery positive in high-side configuration
Pin 3 (Drain)	Power output	Connected to load; large copper tab provides low-inductance, high-current path and primary thermal conduction path

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood applications including temperature cycling, humidity, and mechanical shock per JESD22
100% unclamped inductive switching (UIS) tested	Guarantees single-pulse avalanche ruggedness up to 31 mJ, critical for relay coil suppression
Green RoHS-compliant package	Halogen-free, lead-free construction meeting EU Directive 2011/65/EU and JEDEC J-STD-020 MSL1 rating
Low gate charge asymmetry	Q_gs:Q_gd ≈ 25:13 nC - Enables predictable Miller plateau timing and reduces risk of shoot-through in half-bridge use

Applications

Reverse-Battery Protection

High-Side Load Switch

Use Scenario: Prevents damage to downstream electronics when vehicle battery is connected with reversed polarity.

IC Role / Device Role / Timing Role: P-channel MOSFET placed between battery and main power rail; conducts only when V_GS < V_th.

Use Value: Blocks -40 V reverse voltage with <0.05 µA leakage at 25 °C, eliminating need for series diode and associated 0.3–0.7 V drop.

Use Scenario: Controls power delivery to engine cooling fans, fuel pumps, or HVAC blowers in 12 V/24 V systems.

IC Role / Device Role / Timing Role: High-side switch driven by microcontroller GPIO or dedicated gate driver IC.

Use Value: Delivers -80 A continuous current with <1.5 W conduction loss, enabling compact PCB layout and reduced thermal mass.

Automotive LED Headlamp Driver

Start-Stop System Power Management

Use Scenario: Supplies regulated current to high-intensity LED arrays in adaptive front-lighting systems (AFS).

IC Role / Device Role / Timing Role: PWM-controlled high-side switch operating at 100–500 Hz with fast t_r/t_f to minimize flicker and EMI.

Use Value: 48 ns reverse recovery and 54 nC Q_rr suppress voltage spikes during LED current commutation, improving EMC compliance.

Use Scenario: Manages auxiliary power rail during engine cranking, maintaining stable supply to infotainment and ADAS modules.

IC Role / Device Role / Timing Role: High-current power switch activated by start-stop controller to isolate non-critical loads during voltage sag.

Use Value: 175 °C rated junction temperature ensures reliability during extended cranking events where ambient exceeds 125 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB80P04P412ATMA1	R_DS(on) max = 8.5 mΩ (vs. 7.7 mΩ); same package and AEC-Q101 rating	Higher on-resistance increases conduction loss by ~25% at full load	Select when cost sensitivity outweighs thermal margin requirements
IPP80P04P4LXKSA1	TO-220-3-1 package; R_DS(on) typ = 6.0 mΩ; no MSL1 reflow rating	Through-hole mounting limits automated assembly; unsuitable for reflow-only production	Choose for prototyping or legacy through-hole designs where thermal derating is acceptable

Compared with IPB80P04P407ATMA1, the IPB80P04P412ATMA1 trades lower cost for higher R_DS(on), while the IPP80P04P4LXKSA1 sacrifices SMT compatibility and reflow robustness for mechanical serviceability-neither offers identical thermal or process integration capability.

Availability

IPB80P04P407ATMA1 is available at Aetrix Electronics and suitable for automotive power distribution, reverse-battery protection, and high-side load switching requiring stable component supply across Tier-1 supplier programs, ADAS module builds, and engine control unit (ECU) manufacturing.

Supply support for IPB80P04P407ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and wafer fabrication infrastructure.

This device belongs to the OptiMOS™-P2 product line, engineered specifically for high-efficiency, high-reliability P-channel switching in 12 V and 24 V automotive power networks-including start-stop, body electronics, and powertrain subsystems.

FAQ

What is the maximum allowable gate-source voltage for IPB80P04P407ATMA1?

The absolute maximum V_GS is ±20 V, as specified in the datasheet's "Maximum Ratings" table. Exceeding this limit risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to -12 V maximum during transients, especially in noisy automotive environments with load dump or inductive kickback.

Does IPB80P04P407ATMA1 require a gate resistor, and if so, what value is recommended?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. A 10 Ω resistor is typical for 100 kHz PWM switching with a 1–2 A gate driver. Lower values (≤5 Ω) may be used for faster turn-on but increase EMI risk; higher values (>22 Ω) slow switching and raise dynamic losses. Layout parasitics must also be minimized.

Can IPB80P04P407ATMA1 be used in parallel configurations for higher current handling?

Yes, but only with careful attention to gate drive matching, thermal coupling, and current-sharing resistors. The device's negative temperature coefficient for R_DS(on) promotes self-balancing, yet mismatched PCB trace inductance or gate resistance can cause uneven sharing. Derate total current by ≥15% versus sum of individual ratings.

Is the body diode suitable for freewheeling in synchronous rectification applications?

No-it is not optimized for synchronous rectification. While it supports reverse recovery (t_rr = 48 ns), its V_SD = -1.3 V at -80 A and Q_rr = 54 nC result in higher conduction and switching losses than discrete Schottky or SiC diodes. Use only for clamping or emergency freewheeling, not continuous high-frequency rectification.

IPB80P04P407ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 89 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6085 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 88W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80P04P407ATMA1 FAQ

1.How can I place an order for IPB80P04P407ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80P04P407ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80P04P407ATMA1 reliable?

The price and inventory of IPB80P04P407ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80P04P407ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB80P04P407ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80P04P407ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80P04P407ATMA1?

IPB80P04P407ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80P04P407ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80P04P407ATMA1?

For technical support, including IPB80P04P407ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80P04P407ATMA1 requirements.

6.How does Aetrix verify that IPB80P04P407ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB80P04P407ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80P04P407ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB80P04P407ATMA1?

All IPB80P04P407ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80P04P407ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80P04P407ATMA1 part is unused and in its original packaging.

Return procedure for IPB80P04P407ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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