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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80P04P4L08ATMA1

Name: IPB80P04P4L08ATMA1
Brand: Infineon Technologies
SKU: IPB80P04P4L08ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80P04P4L08ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80P04P4L08ATMA1.pdf

Description:: MOSFET P-CH 40V 80A TO263-3

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Product details

Overview

IPB80P04P4L08ATMA1 from Infineon Technologies is a P-channel logic-level enhancement-mode MOSFET rated for -40 V V_DS, 7.9 mΩ R_DS(on) at V_GS = -10 V and I_D = -80 A, with AEC-Q101 qualification and 175 °C maximum junction temperature. It is used in automotive high-side load switching, battery disconnect, and reverse polarity protection circuits where robust avalanche capability (24 mJ E_AS) and MSL1 reflow compatibility are required.

For engineers reviewing the IPB80P04P4L08ATMA1 datasheet, IPB80P04P4L08ATMA1 pinout, IPB80P04P4L08ATMA1 application, or IPB80P04P4L08ATMA1 equivalent, key selection criteria include its -80 A continuous drain rating at T_C = 25 °C, 2.0 K/W R_thJC, gate plateau voltage of -3.7 V, and SMD-optimized thermal performance on 6 cm² PCB copper area.

Technical Context

This device operates as a high-current, high-reliability P-channel power switch optimized for automotive 12 V systems. Its logic-level gate drive enables direct interface with 3.3 V/5 V microcontrollers, while the integrated body diode supports freewheeling in inductive loads with t_rr = 46 ns and Q_rr = 43 nC.

The MOSFET features a fully characterized safe operating area (SOA) up to single-pulse 320 A, validated avalanche energy of 24 mJ, and thermal impedance profile supporting transient power dissipation in pulsed load applications such as solenoid drivers and motor phase control.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum drain-source blocking voltage for 12 V automotive battery rail protection
R_DS(on)	7.9 mΩ @ V_GS = -10 V, I_D = -80 A - Enables <1 W conduction loss at full rated current
I_D (continuous)	-80 A @ T_C = 25 °C - Supports high-power load switching without external heatsink under nominal conditions
E_AS	24 mJ - Confirmed single-pulse avalanche energy for inductive turn-off stress in motor control
R_thJC	2.0 K/W - Enables precise junction temperature estimation from case temperature in thermal design
Q_g	71–92 nC - Determines gate driver power requirement and switching speed in PWM applications
t_r/t_f	11 ns / 35 ns - Supports >100 kHz switching in synchronous buck or half-bridge topologies

Pinout & Package

IPB80P04P4L08ATMA1 uses the PG-TO263-3-2 surface-mount package (D²PAK), with drain connected to the exposed metal tab for low-inductance, high-current thermal path. The package is RoHS-compliant and qualified to MSL1 for lead-free reflow up to 260 °C.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Accepts logic-level negative voltage (-10 V max); threshold range -1.2 V to -2.2 V enables 3.3 V MCU compatibility
Pin 2 / Tab (Drain)	High-side power node	Exposed metal tab serves as primary drain connection and thermal interface to PCB copper
Pin 3 (Source)	Reference node	Connected to system ground or battery positive in high-side configuration; defines gate-source bias reference

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood applications including engine control, body electronics, and ADAS power stages
100% avalanche tested	Each unit undergoes single-pulse E_AS stress test to guarantee ruggedness in inductive switching
Logic-level gate drive	V_GS(th) = -1.2 to -2.2 V ensures reliable turn-on with standard 3.3 V/5 V digital outputs
Green RoHS package	Halogen-free, lead-free construction compliant with EU Directive 2011/65/EU and JESD204
175 °C operation	Extended junction temperature range supports placement near heat sources in compact ECUs

Applications

Automotive Battery Disconnect

Reverse Polarity Protection

Use Scenario: Isolating 12 V battery from vehicle ECU during ignition-off to prevent parasitic drain.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as controlled series switch between battery and load.

Use Value: Low R_DS(on) (7.9 mΩ) limits voltage drop to <0.64 V at 80 A, minimizing power loss and thermal rise.

Use Scenario: Protecting downstream electronics from damage due to incorrect battery terminal connection.

IC Role / Device Role / Timing Role: Reverse-biased P-MOSFET placed in series with positive supply rail.

Use Value: Withstands -40 V reverse voltage and conducts only when polarity is correct, eliminating need for bulky diodes.

Engine Control Solenoid Driver

Body Control Module Load Switch

Use Scenario: Driving fuel injector or turbocharger wastegate solenoids requiring fast, high-current pulses.

IC Role / Device Role / Timing Role: High-side switch controlling solenoid coil current with active freewheeling via internal body diode.

Use Value: 46 ns t_rr and 43 nC Q_rr minimize switching losses and voltage spikes during coil de-energization.

Use Scenario: Managing power to lighting, HVAC actuators, or window lift motors in centralized body controllers.

IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays in 12 V distribution modules.

Use Value: -80 A continuous rating and 24 mJ E_AS support repeated inrush currents and short-circuit withstand per ISO 7637-2.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80P04P4L-08	Same die, TO-220-3-1 through-hole package; R_thJA = 62 K/W (leaded), no exposed drain tab	Suitable for prototyping or low-volume assemblies where manual soldering or socketing is preferred	Select for ease of hand assembly or legacy board compatibility; avoid in space-constrained or thermally demanding layouts
IPI80P04P4L-08	Same die, TO-262-3-1 package; R_thJA = 62 K/W (leaded), drain tab not electrically isolated from mounting surface	Used in cost-sensitive industrial power supplies where isolation requirements are less stringent than automotive	Choose when mechanical mounting simplicity outweighs thermal optimization; verify insulation requirements for chassis grounding

Compared with IPP80P04P4L-08 and IPI80P04P4L-08, IPB80P04P4L08ATMA1 offers superior thermal performance (R_thJC = 2.0 K/W) and PCB-integrated cooling via its D²PAK drain tab-critical for sustained high-current operation in automotive ECUs.

Availability

IPB80P04P4L08ATMA1 is available at Aetrix Electronics and suitable for automotive battery management, engine control units, and body electronics requiring stable component supply across extended product lifecycles.

Supply support for IPB80P04P4L08ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to IATF 16949.

This part belongs to the OptiMOS™-P2 family of P-channel MOSFETs, engineered specifically for high-efficiency, high-reliability 12 V automotive power switching with emphasis on low gate charge and robust avalanche performance.

FAQ

What is the maximum allowable gate-source voltage for IPB80P04P4L08ATMA1?

The absolute maximum V_GS rating is -16 V. Operation beyond this value risks permanent gate oxide damage. For reliable logic-level drive, maintain V_GS between -4.5 V and -10 V; the gate threshold voltage range is -1.2 V to -2.2 V, ensuring turn-on with standard 3.3 V microcontroller outputs when referenced correctly.

Is IPB80P04P4L08ATMA1 suitable for high-frequency PWM applications?

Yes-it supports PWM frequencies up to 200 kHz in typical automotive DC-DC and motor control designs. With t_r = 11 ns, t_f = 35 ns, and Q_g = 71–92 nC, switching losses remain manageable using a 1–2 A peak gate driver. Layout must minimize gate loop inductance to preserve timing integrity and reduce ringing.

How does the thermal performance of IPB80P04P4L08ATMA1 compare to TO-220 variants?

Its PG-TO263-3-2 package delivers R_thJC = 2.0 K/W versus ~3.5 K/W for TO-220 equivalents, enabling ~40% higher power density. When mounted on 6 cm² PCB copper, R_thJA drops to 40 K/W-significantly better than the 62 K/W of leaded packages-making it ideal for compact, thermally constrained automotive modules.

Does IPB80P04P4L08ATMA1 include an integrated body diode, and what are its key parameters?

Yes-it features a monolithic body diode rated for -80 A continuous forward current and -320 A pulsed current. Key specs include V_SD = -1.0 to -1.3 V at -80 A and 25 °C, t_rr = 46 ns, and Q_rr = 43 nC. These values are critical for freewheeling efficiency and voltage spike suppression in inductive load switching.

IPB80P04P4L08ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.9mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 120µA

Gate Charge (Qg) (Max) @ Vgs:: 92 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 5430 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 75W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80P04P4L08ATMA1 FAQ

1.How can I place an order for IPB80P04P4L08ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80P04P4L08ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80P04P4L08ATMA1 reliable?

The price and inventory of IPB80P04P4L08ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80P04P4L08ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB80P04P4L08ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80P04P4L08ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80P04P4L08ATMA1?

IPB80P04P4L08ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80P04P4L08ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80P04P4L08ATMA1?

For technical support, including IPB80P04P4L08ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80P04P4L08ATMA1 requirements.

6.How does Aetrix verify that IPB80P04P4L08ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB80P04P4L08ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80P04P4L08ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB80P04P4L08ATMA1?

All IPB80P04P4L08ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80P04P4L08ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80P04P4L08ATMA1 part is unused and in its original packaging.

Return procedure for IPB80P04P4L08ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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