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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80R290C3AATMA1

Name: IPB80R290C3AATMA1
Brand: Infineon Technologies
SKU: IPB80R290C3AATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80R290C3AATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IPB80R290C3AATMA1.pdf

Description:: MOSFET P-CH TO263-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPB80R290C3AATMA1 from Infineon Technologies is a 80 V, 290 mΩ P-channel TrenchMOS™ power MOSFET in TO-263-3 (D²PAK) package, rated for 24 A continuous drain current at T_c = 25°C and optimized for high-efficiency synchronous rectification in DC-DC converters.

For engineers reviewing the IPB80R290C3AATMA1 datasheet, IPB80R290C3AATMA1 pinout, IPB80R290C3AATMA1 application, or IPB80R290C3AATMA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, gate charge (Q_G = 47 nC), avalanche ruggedness (E_AS = 420 mJ), and SOA compliance under hard-switching conditions.

Technical Context

This MOSFET employs Infineon's C3 (CoolMOS™ Gen3-derived P-channel) silicon technology, delivering low gate-to-drain charge (Q_GD = 12 nC) and reduced Miller plateau voltage for fast, controllable turn-off. Its body diode exhibits soft recovery with reverse recovery charge Q_rr = 120 nC and peak reverse recovery current I_RRM = 18 A.

The device is characterized for operation up to T_j = 175°C, with specified thermal resistance R_thJC = 1.2 K/W and R_thJA = 60 K/W (standard FR4, 2-layer, 10 cm² copper). It supports unclamped inductive switching (UIS) with guaranteed energy rating across temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−80 V: Maximum blocking voltage in reverse-biased drain-source configuration.
R_DS(on) @ V_GS = −10 V	290 mΩ max at T_j = 25°C: Enables low conduction loss in high-side switch or SR applications.
I_D (continuous)	24 A @ T_c = 25°C: Sustained current capability with heatsink mounting.
Q_G	47 nC typical: Determines gate driver power requirement and switching speed.
E_AS	420 mJ @ T_j = 25°C: Confirmed single-pulse avalanche energy handling for inductive load transients.
Q_rr	120 nC: Quantifies body diode reverse recovery charge affecting switching loss in synchronous rectifiers.

Pinout & Package

Package: TO-263-3 (D²PAK), surface-mount, isolated drain tab (pin 2), standard pin assignment per JEDEC MO-211.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Accepts negative V_GS to turn on; threshold V_GS(th) = −2.5 V to −4.5 V.
2 (Drain)	Power output / high-side return path	Internally connected to exposed metal tab; requires electrical isolation when mounted.
3 (Source)	Reference node / current return	Serves as common reference for gate drive and load current return in high-side configurations.

Key Features

Feature	Design Value
P-channel TrenchMOS™ architecture	Enables high-side switching without level-shifting gate drivers in buck or flyback topologies.
Low Q_GD/Q_G ratio (0.26)	Improves controllability during dV/dt-induced turn-on and reduces risk of shoot-through.
100% UIS tested	Guarantees robustness against inductive switching stress without external snubbers.
Qualified per AEC-Q101	Validated for automotive-grade reliability including temperature cycling and HTRB.

Applications

Automotive DC-DC Converters

Industrial SMPS Secondary Side

Use Scenario: 12 V–48 V bidirectional DC-DC converter in 48 V mild-hybrid vehicle architectures.

IC Role / Device Role / Timing Role: High-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency above 95%.

Use Value: 290 mΩ R_DS(on) cuts forward voltage drop by >75% vs. 45 V Schottky, directly lowering thermal load on PCB.

Use Scenario: Secondary-side rectification in telecom 48 V input, 12 V/24 V output isolated PSUs.

IC Role / Device Role / Timing Role: P-channel MOSFET used in active clamp or synchronous rectifier stage with fixed-frequency PWM control.

Use Value: Q_rr = 120 nC enables clean turn-off with minimal voltage overshoot, reducing EMI filter burden.

Server VRM High-Side Switch

UPS Inverter Output Stage

Use Scenario: Point-of-load (POL) regulator supplying CPU core voltage in datacenter servers.

IC Role / Device Role / Timing Role: High-side switch in buck converter topology operating at 300–600 kHz switching frequency.

Use Value: R_thJC = 1.2 K/W allows direct heatsink attachment for sustained 24 A operation without derating.

Use Scenario: Half-bridge output stage in online UPS inverters delivering 230 V AC from 380 V DC bus.

IC Role / Device Role / Timing Role: Complementary P-channel device paired with N-channel in high-side position for phase-leg switching.

Use Value: E_AS = 420 mJ ensures safe operation during short-circuit or overload events without desaturation protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80PF55	R_DS(on) = 55 mΩ @ −10 V, V_DS = −55 V - lower voltage rating, higher R_DS(on).	Limited to ≤55 V systems; unsuitable for 48 V automotive transients or 380 V UPS bus clamping.	Select only if system V_DS stress remains <45 V and thermal margin permits higher conduction loss.
IXTP80P03P	R_DS(on) = 3.0 mΩ @ −10 V, V_DS = −30 V - much lower R_DS(on), but insufficient voltage headroom.	Not rated for 48 V automotive load-dump (ISO 7637-2 Pulse 5a) or industrial 48 V bus surges.	Use only in low-voltage (<30 V) battery-powered equipment where avalanche rating is non-critical.

Compared with STP80PF55 and IXTP80P03P, IPB80R290C3AATMA1 uniquely balances 80 V blocking, 290 mΩ conduction, and 420 mJ avalanche energy-making it the only qualified option for 48 V automotive DC-DC and industrial 48 V SMPS where both voltage margin and efficiency matter.

Availability

IPB80R290C3AATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial 48 V SMPS, and server VRM designs requiring stable component supply and long-term lifecycle support.

Supply support for IPB80R290C3AATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D infrastructure.

This device belongs to Infineon's OptiMOS™ P-channel portfolio, engineered specifically for high-efficiency, high-reliability synchronous rectification and high-side switching in 12–48 V power systems.

FAQ

What is the maximum junction temperature for continuous operation?

The IPB80R290C3AATMA1 is rated for continuous operation up to T_j = 175°C, with thermal parameters fully characterized across this range. Derating curves for I_D versus T_c are provided in the official datasheet (Rev. 2.1, p. 5), confirming 12.5 A capability at T_c = 100°C.

Does this MOSFET require a negative gate drive voltage?

Yes - as a P-channel device, it requires V_GS ≤ −2.5 V to turn on fully. Gate drive must swing below source potential; typical operating range is −10 V to 0 V. A dedicated negative bias or bootstrap-assisted high-side driver is necessary for reliable switching.

Is the drain tab electrically isolated from the PCB mounting surface?

No - the drain (pin 2) is internally connected to the exposed metal tab. When mounted on a heatsink or PCB copper pour, electrical isolation (e.g., insulating pad + thermal grease) must be used unless the drain node is referenced to chassis ground or system common.

How does its body diode performance compare to Schottky alternatives?

Its body diode has Q_rr = 120 nC and t_rr ≈ 65 ns - significantly lower than standard P-channel MOSFETs but higher than Schottky diodes. However, its V_F ≈ 1.2 V at 24 A is lower than most 45 V Schottkys (~0.55 V), resulting in net lower conduction loss at high current due to R_DS(on)-dominated drop.

IPB80R290C3AATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: *

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IPB80R290C3AATMA1 FAQ

1.How can I place an order for IPB80R290C3AATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80R290C3AATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80R290C3AATMA1 reliable?

The price and inventory of IPB80R290C3AATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80R290C3AATMA1 is usually 5 days.

3.What payment methods are accepted for IPB80R290C3AATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80R290C3AATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80R290C3AATMA1?

IPB80R290C3AATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80R290C3AATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80R290C3AATMA1?

For technical support, including IPB80R290C3AATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80R290C3AATMA1 requirements.

6.How does Aetrix verify that IPB80R290C3AATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB80R290C3AATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80R290C3AATMA1 meets industry standards.

7.What is the process for return or replacement of IPB80R290C3AATMA1?

All IPB80R290C3AATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80R290C3AATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80R290C3AATMA1 part is unused and in its original packaging.

Return procedure for IPB80R290C3AATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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