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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB90N06S404ATMA1

Name: IPB90N06S404ATMA1
Brand: Infineon Technologies
SKU: IPB90N06S404ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB90N06S404ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB90N06S404ATMA1.pdf

Description:: MOSFET N-CH 60V 90A TO263-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPB90N06S404ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO263-3-2 package, rated for 60 V V_DS, 3.7 mΩ max R_DS(on) at 10 V V_GS, 90 A continuous drain current at T_C = 25 °C, and 175 °C maximum junction temperature. It delivers high-current switching in automotive DC-DC converters, motor control inverters, and battery disconnect circuits.

For engineers reviewing the IPB90N06S404ATMA1 datasheet, IPB90N06S404ATMA1 pinout, IPB90N06S404ATMA1 application, or IPB90N06S404ATMA1 equivalent, key selection criteria include its 1.0 K/W R_thJC, 100% avalanche-tested ruggedness (331 mJ E_AS), low gate charge (Q_g = 99–128 nC), and SMD-optimized thermal performance on 6 cm² PCB copper.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology to achieve low R_DS(on) × Q_g figure-of-merit while maintaining robust short-circuit withstand capability. Its gate threshold voltage (2.0–4.0 V) enables reliable 3.3 V and 5 V logic-level drive compatibility in automotive microcontroller interfaces.

The integrated body diode exhibits low forward voltage (V_SD = 0.6–1.3 V at 90 A) and fast reverse recovery (t_rr = 125 ns, Q_rr = 110 nC), supporting synchronous rectification and freewheeling in high-frequency buck and half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 48 V automotive systems with 2× transient margin
R_DS(on) max	3.7 mΩ at V_GS = 10 V - Enables <1.5 W conduction loss at 90 A continuous load
I_D continuous	90 A at T_C = 25 °C - Supported by 1.0 K/W junction-to-case thermal resistance
E_AS	331 mJ - Single-pulse avalanche energy rating ensures robustness against inductive switching transients
Q_g	99–128 nC - Total gate charge determines required driver peak current and switching loss trade-off
t_r/t_f	70 ns / 5 ns - Fast switching transitions reduce overlap losses in hard-switched converters
V_GS(th)	2.0–4.0 V - Threshold range supports stable turn-on with standard 3.3 V/5 V MCU GPIOs

Pinout & Package

IPB90N06S404ATMA1 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal dissipation. The package complies with MSL1 reflow profile up to 260 °C and supports vertical mounting on FR4 PCB with 6 cm² copper area.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connected to ground or current-sense shunt
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <100 nA leakage and precise 0–10 V drive
Pin 3 (Drain)	Power output	Exposed metal pad - primary thermal path to PCB copper; electrically tied to load/high-side rail

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements
100% avalanche tested	Each unit screened for single-pulse E_AS ≥ 331 mJ at I_D = 45 A
Green Product (RoHS)	Lead-free, halogen-free construction compliant with EU Directive 2011/65/EU
175 °C operation	Junction temperature rating enables use in under-hood environments without derating
Optimized for SMD	Thermal resistance R_thJA = 40 K/W on 6 cm² PCB - 35% lower than leaded alternatives

Applications

Automotive DC-DC Converter

Electric Power Steering (EPS) Inverter

Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in mild hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200–500 kHz with zero-voltage switching assist.

Use Value: 3.7 mΩ R_DS(on) reduces conduction loss by >40% vs. legacy 6.5 mΩ devices, improving system efficiency by 1.2% at 60 A load.

Use Scenario: Three-phase inverter driving 3 kW brushless DC motor in steering column actuator.

IC Role / Device Role / Timing Role: Low-side power switch handling 90 A peak phase current with <5 ns fall time for precise PWM edge control.

Use Value: 125 ns t_rr and 110 nC Q_rr minimize diode reverse recovery loss, reducing thermal stress during regenerative braking events.

Battery Disconnect Unit (BDU)

On-Board Charger (OBC) Input Stage

Use Scenario: Solid-state contactor replacing mechanical relay in 400 V EV battery main contactor circuit.

IC Role / Device Role / Timing Role: Bidirectional current-handling switch with integrated avalanche ruggedness for fault current interruption.

Use Value: 331 mJ E_AS rating allows safe clamping of 400 V inductive kickback without external snubber, simplifying BOM.

Use Scenario: Active front-end (AFE) PFC switch in 6.6 kW bidirectional OBC converting AC grid to 400 V DC bus.

IC Role / Device Role / Timing Role: Fast-switching, low-R_DS(on) switch in totem-pole topology operating at 100 kHz.

Use Value: 99–128 nC Q_g enables efficient gate drive with 2 A peak driver ICs, reducing gate driver power consumption by 22%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP90N06S4-04	Same die, TO-220-3-1 package - higher R_thJA (62 K/W), no exposed drain pad	Suitable for prototyping or low-volume through-hole assembly; not for high-power SMD designs	Select when manual soldering, heatsink mounting, or legacy footprint compatibility is required
IPB80N06S4-04	Lower R_DS(on) (3.0 mΩ typ), same package - reduced conduction loss but higher Q_g (135 nC)	Better for low-frequency, high-current apps; less optimal for >200 kHz switching due to increased switching loss	Select when thermal budget is tight but switching frequency ≤ 100 kHz

Compared with IPP90N06S4-04, IPB90N06S404ATMA1 offers superior thermal performance in SMD layouts; compared with IPB80N06S4-04, it trades 0.7 mΩ higher R_DS(on) for 36 nC lower Q_g, favoring high-frequency efficiency in automotive converters.

Availability

IPB90N06S404ATMA1 is available at Aetrix Electronics and suitable for automotive battery management systems, electric power steering inverters, and on-board charger front-end stages requiring stable component supply across extended temperature and lifecycle demands.

Supply support for IPB90N06S404ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™-T2 power transistor product line, engineered specifically for high-efficiency, high-reliability 12 V–48 V automotive power conversion and motor control applications.

FAQ

What is the maximum allowable gate-source voltage for IPB90N06S404ATMA1?

The absolute maximum V_GS is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. For reliable 10 V drive, use a gate driver with tight regulation and transient suppression - typical gate plateau voltage is 5.4 V, confirmed by Q_gs/Q_gd curves in the datasheet.

Does IPB90N06S404ATMA1 require a gate resistor, and what value is recommended?

Yes - a gate resistor controls dV/dt and ringing. For 90 A switching at 200 kHz, a 3.5 Ω resistor is validated in the datasheet (t_d(on), t_r, t_d(off), t_f test conditions). Lower values increase switching speed but risk shoot-through; higher values reduce EMI but raise switching loss.

Can IPB90N06S404ATMA1 be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (R_DS(on) increases with T_j) enables inherent current sharing. Layout symmetry, matched gate drive paths, and individual source resistors (10–22 mΩ) are required to ensure balanced dynamic current distribution across paralleled units.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes - the body diode has V_SD = 0.6–1.3 V at 90 A and t_rr = 125 ns, making it viable for synchronous rectification up to 300 kHz. However, external Schottky diodes may be preferred above 200 kHz to minimize Q_rr-related losses in high-efficiency designs.

IPB90N06S404ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.7mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 4V @ 90µA

Gate Charge (Qg) (Max) @ Vgs:: 128 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB90N06S404ATMA1 FAQ

1.How can I place an order for IPB90N06S404ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB90N06S404ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB90N06S404ATMA1 reliable?

The price and inventory of IPB90N06S404ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB90N06S404ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB90N06S404ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB90N06S404ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB90N06S404ATMA1?

IPB90N06S404ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB90N06S404ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB90N06S404ATMA1?

For technical support, including IPB90N06S404ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB90N06S404ATMA1 requirements.

6.How does Aetrix verify that IPB90N06S404ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB90N06S404ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB90N06S404ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB90N06S404ATMA1?

All IPB90N06S404ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB90N06S404ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB90N06S404ATMA1 part is unused and in its original packaging.

Return procedure for IPB90N06S404ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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