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Infineon Technologies IPB90N06S404ATMA2

Part No.:
IPB90N06S404ATMA2
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIPB90N06S404ATMA2.pdf
Description:
MOSFET N-CH 60V 90A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,707

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Product details

Overview

IPB90N06S404ATMA2 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO263-3-2 package, rated for 60 V VDS, 3.7 mΩ max RDS(on) at 10 V VGS, 90 A continuous drain current at TC = 25 °C, and 175 °C maximum junction temperature. It delivers high-current switching in automotive DC-DC converters, motor control inverters, and battery disconnect circuits.

For engineers reviewing the IPB90N06S404ATMA2 datasheet, IPB90N06S404ATMA2 pinout, IPB90N06S404ATMA2 application, or IPB90N06S404ATMA2 equivalent, key selection criteria include its 1.0 K/W RthJC, 100% avalanche-tested ruggedness (EAS = 331 mJ), integrated body diode with 0.95 V typical VSD, and MSL1 reflow compatibility up to 260 °C.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-duty-cycle automotive power stages. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS-level drive, while the 99–128 nC total gate charge supports efficient gate driver sizing for 10–100 kHz PWM operation.

The MOSFET features a thermally enhanced SMD package with direct-drain copper pad for low-inductance PCB mounting, and its reverse recovery characteristics (Qrr = 110 nC, trr = 125 ns) are characterized under VR = 30 V, IF = 50 A, and diF/dt = 100 A/µs - critical for synchronous rectification and bidirectional energy transfer.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - Maximum blocking voltage for 12 V/24 V automotive systems with transient margin
RDS(on) max3.7 mΩ at VGS = 10 V - Enables ≤ 30 W conduction loss at 90 A continuous current
ID continuous90 A at TC = 25 °C - Supported by 1.0 K/W thermal resistance to case
EAS331 mJ - Confirmed single-pulse avalanche energy rating for inductive load turn-off safety
Qg99–128 nC - Determines gate driver peak current requirement (≥ 2 A for 50 ns rise time)
VGS(th)2.0–4.0 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers
tr/tf70 ns / 5 ns - Fast switching enables high-frequency operation with reduced switching loss

Pinout & Package

IPB90N06S404ATMA2 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with isolated heat slug. The drain connects directly to the large exposed copper pad on the bottom side for optimal thermal transfer to PCB copper area.

Pin/TerminalCircuit RoleDesign Meaning
1 (Source)Source terminal (S)Low-side reference node; connected to ground or current-sense shunt
2 (Gate)Control input (G)High-impedance MOSFET gate requiring <100 nA leakage current handling
3 (Drain)Power output (D)Exposed copper pad - must be soldered to ≥6 cm² PCB copper for RthJA = 40 K/W

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive powertrain and chassis applications per stress test requirements
100% avalanche testedEach unit passes single-pulse EAS screening - eliminates latent failure risk in inductive switching
MSL1 reflow ratingWithstands peak soldering temperatures up to 260 °C without delamination or parameter shift
Integrated body diodeOptimized for fast recovery (trr = 125 ns) and low forward drop (VSD = 0.95 V typ)
Green productRoHS-compliant, halogen-free, and lead-free per EU Directive 2011/65/EU

Applications

Automotive DC-DC ConverterElectric Power Steering (EPS) Inverter

Use Scenario: Step-down conversion from 48 V or 12 V battery to 3.3 V/5 V MCU rails in ADAS domain controllers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200–500 kHz PWM frequency.

Use Value: 3.7 mΩ RDS(on) minimizes conduction loss at 20–40 A load, enabling >95% efficiency at full load.

Use Scenario: Three-phase inverter driving 300–500 W brushless DC motor in steering assist module.

IC Role / Device Role / Timing Role: Low-side power switch in half-bridge leg with active freewheeling via body diode.

Use Value: 125 ns trr and 110 nC Qrr reduce cross-conduction loss and EMI during commutation.

Battery Disconnect SwitchOn-Board Charger (OBC) Input Stage

Use Scenario: Solid-state replacement of mechanical relay in 12 V/24 V vehicle battery management systems.

IC Role / Device Role / Timing Role: Single-pole, normally-open high-current switch controlled by MCU GPIO.

Use Value: 90 A continuous rating and 331 mJ EAS ensure safe interruption of short-circuit currents up to 360 A.

Use Scenario: Active rectification and power factor correction (PFC) switching stage in 3.3 kW OBC.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC topology.

Use Value: Low Qgd/Qgs ratio (≈0.2–0.3) improves voltage-mode stability and reduces Miller-induced shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPP90N06S4-04Same die, TO-220-3-1 through-hole package; RthJC = 1.0 K/W, RthJA = 62 K/WPreferred for prototyping, lower-volume industrial power supplies with heatsink mountingSelect when manual assembly, thermal testing, or legacy board compatibility is required
IPB80N06S4-04Lower RDS(on) (3.0 mΩ typ), same package; 80 A rated current, slightly reduced avalanche energy (290 mJ)Better suited for space-constrained 48 V systems where conduction loss dominates over fault robustnessChoose when optimizing for efficiency at <80 A, not for 90 A continuous or high-energy fault tolerance

Compared with IPP90N06S4-04, IPB90N06S404ATMA2 offers superior thermal performance in SMD layouts and higher reliability in automated assembly; versus IPB80N06S4-04, it trades marginal RDS(on) increase for guaranteed 90 A current capability and higher EAS margin.

Availability

IPB90N06S404ATMA2 is available at Aetrix Electronics and suitable for automotive power modules, electric power steering systems, and on-board chargers requiring stable component supply across extended temperature and lifecycle requirements.

Supply support for IPB90N06S404ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS®-T2 family - engineered specifically for high-efficiency, high-reliability automotive power conversion with emphasis on ruggedness, thermal performance, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IPB90N06S404ATMA2?

The absolute maximum VGS is ±20 V, but recommended operating range is –10 V to +15 V for reliable long-term performance. Exceeding +15 V increases gate oxide stress risk, while negative gate bias beyond –10 V may cause unintended channel inversion in high-dV/dt environments.

Does IPB90N06S404ATMA2 require a gate resistor for automotive PWM applications?

Yes - a 3.5 Ω gate resistor is used in the datasheet's switching characterization (td(on), tr, etc.). For 100 kHz operation, a 2.2–4.7 Ω resistor balances switching speed against gate driver current capability and ringing suppression.

Can IPB90N06S404ATMA2 be used in parallel configurations?

Yes - its positive temperature coefficient for RDS(on) (increasing ~0.5%/°C) enables inherent current sharing. Layout symmetry, matched gate drive paths, and individual source resistors (10–20 mΩ) are required to ensure balanced dynamic current distribution.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes - with trr = 125 ns and Qrr = 110 nC, it performs comparably to discrete Schottky diodes in 200–500 kHz buck topologies. However, external SiC Schottky diodes remain preferred above 1 MHz due to lower Qrr and zero reverse recovery.

IPB90N06S404ATMA2 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:
4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:
128 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
10400 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
150W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3

IPB90N06S404ATMA2 FAQ

1.How can I place an order for IPB90N06S404ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB90N06S404ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB90N06S404ATMA2 reliable?

The price and inventory of IPB90N06S404ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB90N06S404ATMA2 is usually 5 days.

3.What payment methods are accepted for IPB90N06S404ATMA2?

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4.How is shipping managed for IPB90N06S404ATMA2?

IPB90N06S404ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB90N06S404ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB90N06S404ATMA2?

For technical support, including IPB90N06S404ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB90N06S404ATMA2 requirements.

6.How does Aetrix verify that IPB90N06S404ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPB90N06S404ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB90N06S404ATMA2 meets industry standards.

7.What is the process for return or replacement of IPB90N06S404ATMA2?

All IPB90N06S404ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPB90N06S404ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB90N06S404ATMA2 part is unused and in its original packaging.

Return procedure for IPB90N06S404ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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