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Infineon Technologies IPB90N06S4L04ATMA1

Name: IPB90N06S4L04ATMA1
Brand: Infineon Technologies
SKU: IPB90N06S4L04ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB90N06S4L04ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB90N06S4L04ATMA1.pdf

Description:: MOSFET N-CH 60V 90A TO263-3

Quantity:: RFQ Add To RFQ list

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Inventory:6,498

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Product details

Overview

IPB90N06S4L04ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PG-TO263-3-2 package, rated for 60 V V_DS, 3.4 mΩ max R_DS(on) at V_GS = 10 V and I_D = 90 A, with 175 °C maximum junction temperature. It delivers high-current switching in automotive DC-DC converters, motor control inverters, and battery disconnect circuits.

For engineers reviewing the IPB90N06S4L04ATMA1 datasheet, IPB90N06S4L04ATMA1 pinout, IPB90N06S4L04ATMA1 application, or IPB90N06S4L04ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V and 10 V, avalanche energy (331 mJ), thermal resistance (R_thJC = 1.0 K/W), and AEC-Q101 qualification status.

Technical Context

This OptiMOS®-T2 power transistor uses trench-gate superjunction technology to achieve low on-resistance and optimized switching performance. Its gate threshold voltage (1.2–2.2 V) enables robust 3.3 V and 5 V logic-level drive compatibility, while its 100% avalanche-tested design ensures ruggedness under inductive load switching.

The device features a monolithic integrated body diode with 0.6–1.3 V forward voltage at 90 A and 50 ns reverse recovery time. Thermal design is supported by a low junction-to-case resistance (1.0 K/W), enabling high-power operation on minimal PCB copper area (6 cm²).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage for 12 V/24 V automotive systems
R_DS(on) max @ V_GS=10 V	3.4 mΩ - Enables ≤2.7 W conduction loss at 90 A continuous current
I_D continuous @ T_C=100°C	90 A - Sustains full-rated current in high-temperature engine bay environments
E_AS single-pulse	331 mJ - Withstands repetitive inductive turn-off stress without failure
R_thJC	1.0 K/W - Allows direct heatsink mounting for efficient thermal management
Q_g total	133–170 nC - Determines gate driver power requirement and switching speed trade-off
V_GS(th)	1.2–2.2 V - Ensures reliable turn-on with standard microcontroller GPIO outputs

Pinout & Package

IPB90N06S4L04ATMA1 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with isolated drain tab. The three terminals are arranged in standard configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives voltage signal to modulate channel conductivity; requires <170 nC charge for full turn-on
Pin 2 (Drain)	High-side power terminal	Exposed copper tab electrically connected to drain; serves as primary thermal path to heatsink
Pin 3 (Source)	Reference and return path	Common node for gate drive reference and load current return; ties to system ground or low-side switch

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements
100% avalanche tested	Each unit subjected to single-pulse E_AS stress at 45 A, ensuring field reliability under inductive switching
MSL1 rating	Compatible with lead-free reflow up to 260 °C peak, eliminating moisture sensitivity concerns
Green Product (RoHS)	Lead-free, halogen-free construction compliant with EU Directive 2011/65/EU
Optimized body diode	Low V_SD (0.6–1.3 V) and fast t_rr (50 ns) reduce freewheeling losses in synchronous rectification

Applications

Automotive DC-DC Converter

Electric Power Steering (EPS) Inverter

Use Scenario: High-efficiency 12 V to 48 V bidirectional conversion in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier MOSFET in buck-boost topology.

Use Value: 3.4 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 5 mΩ devices at 90 A, improving system efficiency by 1.2%.

Use Scenario: Three-phase motor drive for steering assist actuation in ISO 26262 ASIL-B systems.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg with fast 20 ns fall time.

Use Value: 175 °C operating temperature and AEC-Q101 qualification ensure functional safety compliance under hood ambient extremes.

Battery Disconnect Switch

Onboard Charger (OBC) Input Stage

Use Scenario: High-current isolation between 400 V traction battery and auxiliary systems during fault conditions.

IC Role / Device Role / Timing Role: Single-pole, high-reliability power switch controlled via isolated gate driver.

Use Value: 331 mJ avalanche energy rating allows safe clamping of 400 V bus transients without external snubbers.

Use Scenario: Active rectification in AC/DC front-end of 6.6 kW OBC using totem-pole PFC.

IC Role / Device Role / Timing Role: Fast-switching, low-Q_gd MOSFET (12–24 nC) minimizing Miller-induced shoot-through risk.

Use Value: Crss of 90–180 pF and Q_gd/Q_gs ratio <0.7 enable stable 100+ kHz operation with standard gate drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP90N06S4L-04	PG-TO220-3-1 through-hole package; identical electrical specs but higher R_thJA (62 K/W)	Suitable for prototyping or lower-power industrial SMPS where heatsinking is less constrained	Select when manual assembly, cost sensitivity, or legacy footprint compatibility outweighs thermal density needs
IPB80N06S4-05	60 V, 80 A, 4.5 mΩ R_DS(on); same OptiMOS®-T2 process but lower current rating	Preferred for 60–70 A applications where margin for transient overloads is reduced	Choose when board space or BOM count reduction justifies slightly higher conduction loss

Compared with IPP90N06S4L-04 and IPB80N06S4-05, IPB90N06S4L04ATMA1 provides superior thermal performance in surface-mount layouts and highest current capability within the 60 V OptiMOS®-T2 family, making it optimal for production automotive modules requiring compact, high-power density solutions.

Availability

IPB90N06S4L04ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering inverters, and battery disconnect switches requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPB90N06S4L04ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS®-T2 power transistor product line, engineered specifically for high-efficiency, high-reliability switching in automotive power systems including 12 V/48 V architectures and electric drivetrain subsystems.

FAQ

What is the maximum allowable gate-source voltage for IPB90N06S4L04ATMA1?

The absolute maximum gate-source voltage is ±16 V. Operation beyond this range risks permanent gate oxide damage. Recommended drive is 10 V for full R_DS(on) optimization, with 4.5 V sufficient for partial conduction in logic-level applications. Transient overshoot must be clamped below ±16 V using gate resistors and Zener protection.

Does IPB90N06S4L04ATMA1 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For 90 A switching at 100 kHz, a 3.5 Ω resistor is validated in Infineon's reference designs. Lower values increase switching speed but raise EMI and gate driver stress; higher values reduce losses but extend transition times and increase switching loss.

How does the body diode performance compare to discrete Schottky diodes in freewheeling applications?

The integrated body diode has V_SD = 0.6–1.3 V at 90 A and t_rr = 50 ns, offering lower forward drop than silicon PN diodes but higher than 0.45 V Schottky alternatives. Its soft recovery minimizes voltage spikes, making it preferable to Schottky in high-di/dt inductive loads despite slightly higher conduction loss.

Is IPB90N06S4L04ATMA1 suitable for use in ASIL-D functional safety systems?

No - while AEC-Q101 qualified and widely used in ASIL-B systems (e.g., EPS), it lacks ISO 26262 hardware metrics (FMEDA, SPFM, LFM) and diagnostic coverage documentation required for ASIL-D. For ASIL-D, Infineon recommends complementing with external monitoring or selecting certified safety components like the HITFET+ series.

IPB90N06S4L04ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.4mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 90µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 13000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB90N06S4L04ATMA1 FAQ

1.How can I place an order for IPB90N06S4L04ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB90N06S4L04ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB90N06S4L04ATMA1 reliable?

The price and inventory of IPB90N06S4L04ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB90N06S4L04ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB90N06S4L04ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB90N06S4L04ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB90N06S4L04ATMA1?

IPB90N06S4L04ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB90N06S4L04ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB90N06S4L04ATMA1?

For technical support, including IPB90N06S4L04ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB90N06S4L04ATMA1 requirements.

6.How does Aetrix verify that IPB90N06S4L04ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB90N06S4L04ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB90N06S4L04ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB90N06S4L04ATMA1?

All IPB90N06S4L04ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB90N06S4L04ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB90N06S4L04ATMA1 part is unused and in its original packaging.

Return procedure for IPB90N06S4L04ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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