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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPBE65R075CFD7AATMA1

Name: IPBE65R075CFD7AATMA1
Brand: Infineon Technologies
SKU: IPBE65R075CFD7AATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPBE65R075CFD7AATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Datasheet:: IPBE65R075CFD7AATMA1.pdf

Description:: MOSFET N-CH 650V 32A TO263-7

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Product details

Overview

IPBE65R075CFD7AATMA1 from Infineon is a 650 V, 75 mΩ automotive-qualified CoolMOS™ CFD7A superjunction MOSFET in PG-TO263-7-11 (D²-PAK 7-pin) package with Kelvin source contact, integrated fast body diode (diF/dt = 1300 A/µs), and AEC-Q101 qualification. It delivers ultra-low Qrr (0.86 µC), low Eoss (8.8 µJ @ 400 V), and optimized FOM (RDS(on) × Qg = 5.1 nC·Ω), targeting high-efficiency PFC and resonant DC-DC stages in on-board chargers.

For engineers reviewing the IPBE65R075CFD7AATMA1 datasheet, IPBE65R075CFD7AATMA1 pinout, IPBE65R075CFD7AATMA1 application, or IPBE65R075CFD7AATMA1 equivalent, key selection criteria include its 139 A pulsed drain current, 100% avalanche-tested ruggedness, Kelvin source for precise gate control, and suitability for ZVS phase-shift full-bridge and LLC topologies under 475 V battery systems.

Technical Context

This MOSFET employs Infineon's 7th-generation CoolMOS™ CFD7A silicon with charge-compensation superjunction structure and integrated fast-recovery body diode. Its dv/dt ruggedness (120 V/ns) and reverse diode commutation speed (1300 A/µs) enable stable operation in hard- and soft-switching converters without external snubbers.

The device features a dedicated Kelvin source pin (Pin 2) separate from power source pins (Pins 3–7), enabling accurate gate drive referencing and minimizing source inductance effects. Gate plateau voltage is 5.7 V at 400 V VDD and 16.4 A ID, supporting robust turn-on control in high-noise automotive environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC bus voltages up to 475 V battery systems with margin for transients and cosmic radiation effects.
R_DS(on), max	75 mΩ @ T_j = 150 °C - Enables low conduction loss in high-current PFC boost stages and DC-DC primary switches.
Q_g, typ	68 nC @ V_GS = 0–10 V - Low gate charge supports high-frequency switching (>100 kHz) with reduced driver power demand.
E_oss	8.8 µJ @ 400 V - Minimizes turn-off energy loss in resonant topologies, improving light-load efficiency in LLC converters.
di_F/dt	1300 A/µs - Fast body diode recovery enables zero-voltage switching in phase-shifted full-bridge without oscillation or shoot-through risk.
T_j max	150 °C - Rated for continuous operation in under-hood automotive environments with validated thermal derating curves.
R_thJC	0.73 °C/W - Enables high-power dissipation (171 W @ T_C = 25 °C) with standard heatsinking in compact SMD layouts.

Pinout & Package

Package: PG-TO263-7-11 (D²-PAK 7-pin) with isolated tab (Drain), Kelvin source terminal, and 4× parallel power source pins for low-inductance, high-current PCB routing.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Standard gate input; requires <20 V absolute max rating; Kelvin source separation prevents gate overdrive during high di/dt events.
Pin 2	Kelvin Source	Dedicated low-inductance sense path for gate driver feedback; not interchangeable with power source pins-exchange causes malfunction.
Pins 3–7	Power Source	Four parallel source terminals + one auxiliary source; collectively handle 32 A continuous current with minimized bond-wire inductance.
Tab (Drain)	Drain	Exposed metal tab electrically connected to Drain; provides primary thermal path and must be soldered to copper pour for R_thJC = 0.73 °C/W.

Key Features

Feature	Design Value
Integrated fast body diode	di_F/dt = 1300 A/µs and t_rr = 156 ns - Eliminates need for external anti-parallel SiC/Si diodes in bidirectional DC-DC and PFC.
Kelvin source contact	Dedicated Pin 2 with <1 nH loop inductance - Enables stable gate control under >100 A/µs switching currents without false turn-off.
AEC-Q101 qualification	100% avalanche tested (E_AS = 164 mJ) and cosmic radiation assessment support - Meets automotive functional safety requirements for OBC and traction inverters.
Low R_DS(on) × Q_g FOM	5.1 nC·Ω - Balances conduction and switching losses for optimal efficiency across 65–150 kHz PFC and LLC operating ranges.
Increased creepage distance	Package meets reinforced insulation requirements per IEC 60664-1 - Supports 400 V AC isolation in on-board charger secondary-side gate drivers.

Applications

On-Board Charger (OBC) PFC Stage

LLC Resonant DC-DC Converter

Use Scenario: Unidirectional 11 kW OBC front-end boost converter operating at 65–100 kHz with 400 V nominal battery voltage.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 32 A continuous drain current and 139 A pulse current during transient load steps.

Use Value: Ultra-low Q_rr (0.86 µC) reduces body diode conduction loss by >40% vs. prior CFD generation, extending thermal headroom at full load.

Use Scenario: Isolated 3.3 kW DC-DC stage converting 400 V battery to 48 V auxiliary supply in dual-phase LLC topology.

IC Role / Device Role / Timing Role: Resonant tank switch synchronized to zero-voltage crossing; leverages fast di_F/dt for reliable ZVS across 20–95% load range.

Use Value: E_oss = 8.8 µJ @ 400 V cuts turn-off loss by 32% versus comparable 650 V Si MOSFETs, enabling >97.2% peak efficiency.

ZVS Phase-Shift Full-Bridge Inverter

Bidirectional DC-DC for Vehicle-to-Grid (V2G)

Use Scenario: 22 kW bi-directional inverter for grid-tied charging/discharging, using phase-shift control with 50–120 kHz switching.

IC Role / Device Role / Timing Role: High-side bridge arm switch with Kelvin source referenced gate driver to suppress parasitic turn-on during cross-conduction.

Use Value: 120 V/ns dv/dt ruggedness ensures immunity to Miller-induced false triggering even with 100 V/ns PCB layout parasitics.

Use Scenario: Dual-active-bridge (DAB) converter enabling regenerative braking energy return to grid via 400 V DC link.

IC Role / Device Role / Timing Role: Bidirectional synchronous rectifier and active switch; body diode conducts reverse current during half-cycle commutation.

Use Value: Integrated fast diode eliminates discrete anti-parallel diode count, reducing BOM cost by $0.38/unit and PCB area by 14 mm² per switch.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R080CFD7XKSA1	80 mΩ R_DS(on), TO-247-3L package, no Kelvin source	Lacks Kelvin source; unsuitable for high-di/dt ZVS designs requiring gate drive stability	Prefer for cost-sensitive industrial PFC where layout inductance is tightly controlled and di/dt < 500 A/µs
STW65N65M5	650 V, 75 mΩ, but Q_rr = 2.1 µC and no AEC-Q101 qualification	Higher Q_rr increases body diode loss in resonant converters; not automotive qualified	Select only for non-automotive 400 V industrial SMPS where PPAP compliance is not required

Compared with IPW65R080CFD7XKSA1 and STW65N65M5, IPBE65R075CFD7AATMA1 uniquely combines Kelvin source, AEC-Q101, and industry-lowest Q_rr, making it the sole choice for production-grade automotive OBC and V2G systems demanding both reliability and ZVS robustness.

Availability

IPBE65R075CFD7AATMA1 is available at Aetrix Electronics and suitable for on-board chargers, LLC DC-DC converters, and ZVS phase-shift full-bridge inverters requiring stable component supply, automotive-grade traceability, and long-term lifecycle support.

Supply support for IPBE65R075CFD7AATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure serving automotive, industrial, and renewable energy markets.

This part belongs to the CoolMOS™ CFD7A product line, engineered specifically for high-efficiency, high-reliability automotive power conversion-including on-board chargers, traction inverters, and bidirectional DC-DC-where low Q_rr, Kelvin source control, and AEC-Q101 validation are mandatory.

FAQ

Can IPBE65R075CFD7AATMA1 be used in linear mode operation?

No. Infineon explicitly states that CoolMOS™ devices including this part are not recommended for linear mode operation due to thermal instability and localized hot-spot risks. Linear-mode use requires direct technical evaluation and approval from Infineon's sales office before design-in.

What is the maximum allowable gate voltage during dynamic operation?

The dynamic gate-source voltage rating is ±30 V (V_GSk,pulse), applicable for pulses ≤2 ns and repetition rates ≤100 kHz. Exceeding this limit-even briefly-risks permanent gate oxide damage; gate drivers must include clamping circuits to enforce this boundary.

Why are the source and Kelvin source pins not interchangeable?

Pin 2 (Kelvin source) is internally bonded to the source metallization with minimal inductance for gate driver reference, while Pins 3–7 carry high-current source return paths. Swapping them introduces ~5 nH of unintended inductance into the gate loop, causing oscillation, false turn-on, and potential device failure under high di/dt.

Is reflow soldering supported, and what is the MSL level?

Yes-reflow soldering is supported at peak temperature ≤260 °C (MSL Level 1), with no floor life limitation. The PG-TO263-7-11 package is qualified for standard lead-free reflow profiles; post-solder inspection must verify full tab solder joint coverage to maintain R_thJC = 0.73 °C/W.

IPBE65R075CFD7AATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7A

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 75mOhm @ 16.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 820µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3288 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 171W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-3-10

IPBE65R075CFD7AATMA1 FAQ

1.How can I place an order for IPBE65R075CFD7AATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPBE65R075CFD7AATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPBE65R075CFD7AATMA1 reliable?

The price and inventory of IPBE65R075CFD7AATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPBE65R075CFD7AATMA1 is usually 5 days.

3.What payment methods are accepted for IPBE65R075CFD7AATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPBE65R075CFD7AATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPBE65R075CFD7AATMA1?

IPBE65R075CFD7AATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPBE65R075CFD7AATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPBE65R075CFD7AATMA1?

For technical support, including IPBE65R075CFD7AATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPBE65R075CFD7AATMA1 requirements.

6.How does Aetrix verify that IPBE65R075CFD7AATMA1 is sourced from the original manufacturer or authorized distributors?

All IPBE65R075CFD7AATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPBE65R075CFD7AATMA1 meets industry standards.

7.What is the process for return or replacement of IPBE65R075CFD7AATMA1?

All IPBE65R075CFD7AATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPBE65R075CFD7AATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPBE65R075CFD7AATMA1 part is unused and in its original packaging.

Return procedure for IPBE65R075CFD7AATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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