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Infineon Technologies IPC014N03L3X1SA1
- Part No.:
- IPC014N03L3X1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- Die
- Datasheet:
-
IPC014N03L3X1SA1.pdf
- Description:
- MOSFET N-CH 30V 2A SAWN ON FOIL
- Quantity:
- Payment:
- Shipping:
Inventory:8,668
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Product details
Overview
IPC014N03L3X1SA1 from Infineon is an N-channel enhancement-mode bare-die Power MOSFET in the OptiMOS™3 family, rated for 30 V V(BR)DSS and 13.5 mΩ typical RDS(on) at VGS = 10 V, with die size 1.64 × 0.845 mm² and 175 µm thickness. It serves as a high-efficiency switching element in compact DC-DC converters, motor drive half-bridges, and synchronous rectification stages where thermal and space constraints demand chip-level integration.
For engineers reviewing the IPC014N03L3X1SA1 datasheet, IPC014N03L3X1SA1 pinout (Drain/Gate/Source terminals), IPC014N03L3X1SA1 application in wafer-level power stages, or IPC014N03L3X1SA1 equivalent bare-die MOSFETs, this page delivers verified die-level specifications, bonding interface details (AlCu frontside, NiV backside), ESD handling guidance (MIL-STD-883C), and wafer-level electrical test conditions (Tj = 25°C, ID = 2.0 A).
Technical Context
This bare-die MOSFET operates in enhancement mode with gate threshold voltage VGS(th) between 1.0 V and 2.2 V, enabling low-voltage logic-level drive compatibility. Its RDS(on) of 10.3 mΩ (typ.) at VGS = 10 V and ID = 2.0 A reflects optimized trench-cell design for reduced conduction loss in high-frequency switching.
The device features nitride + imide passivation, AlCu frontside metallization, and NiV backside metallization-engineered for reliable wire-bonding (4×500 µm Al-wedge double stitch) and thermal transfer in hybrid modules or embedded die substrates. Drain-source leakage IDSS remains ≤2 µA at VDS = 30 V, supporting stable off-state blocking in industrial power rails.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 30 V - Ensures safe operation in 24 V nominal bus systems with transient margin. |
| RDS(on) | 10.3 mΩ (typ.) at VGS = 10 V, ID = 2.0 A - Enables <100 mW conduction loss at 3 A continuous drain current. |
| VGS(th) | 1.0–2.2 V - Compatible with 1.8 V/3.3 V microcontroller GPIOs without level-shifting. |
| IDSS | ≤2 µA at VDS = 30 V - Guarantees minimal standby power loss in always-on control circuits. |
| DIE SIZE | 1.64 × 0.845 mm² - Fits standard 2.0 mm pitch wire-bond cavities in multi-chip power modules. |
| THICKNESS | 175 µm - Matches thin-die handling requirements for flip-chip or cavity-down packaging. |
Pinout & Package
IPC014N03L3X1SA1 is supplied as a bare silicon die with three exposed metal terminals: Drain (backside NiV metallization), Gate (frontside AlCu pad), and Source (frontside AlCu pad). No leadframe or molded package is included.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain | High-side power node connection | Backside NiV metallization enables solder or epoxy die attach to heatsink or DBC substrate. |
| Gate | Control input terminal | Frontside AlCu pad sized for 4×500 µm Al-wedge double-stitch bonding; requires ESD-safe handling. |
| Source | Reference node for gate drive and current sensing | Frontside AlCu pad adjacent to Gate; supports Kelvin-source layout for accurate RDS(on)-based current monitoring. |
Key Features
| Feature | Design Value |
|---|---|
| N-channel enhancement mode | Enables self-turn-off behavior and simplifies gate-drive circuitry in half-bridge configurations. |
| OptiMOS™3 trench technology | Delivers 30% lower RDS(on) × Qg figure-of-merit vs. prior-generation bare-die MOSFETs at same voltage class. |
| AlCu frontside / NiV backside metallization | Supports robust thermomechanical reliability under 1000+ thermal cycles in power module assembly. |
| Nitride + imide passivation | Prevents moisture ingress and wire-bond corrosion during reflow and long-term operation at 150°C TJ. |
Applications
| Motor Drive Half-Bridge | Synchronous Rectifier |
|---|---|
Use Scenario: Integrated into a 24 V BLDC motor driver module using stacked-die topology. IC Role / Device Role / Timing Role: Low-side switch in a 20 kHz PWM-driven half-bridge, sharing substrate with gate driver IC. Use Value: 10.3 mΩ RDS(on) limits I²R loss to <95 mW at 3 A RMS, reducing heatsink mass by 35% versus discrete TO-252 equivalents. | Use Scenario: Embedded in an isolated 48 V–12 V DC-DC converter for telecom base station power supply. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in secondary-side full-wave configuration. Use Value: 0.86 V typical VSD reduces forward conduction loss by 42% vs. 45 V Schottky, improving efficiency from 92.1% to 94.7% at 20 A load. |
| Compact DC-DC Converter | Industrial PLC Output Stage |
Use Scenario: Used in a 12 V input, 3.3 V output point-of-load regulator with integrated magnetics. IC Role / Device Role / Timing Role: High-side switch operating at 1 MHz with 50 ns dead-time control. Use Value: 1.0–2.2 V VGS(th) allows direct drive from FPGA I/O banks, eliminating external level shifters and saving 2.1 mm² PCB area. | Use Scenario: Mounted on ceramic DBC substrate in a DIN-rail mounted programmable logic controller output card. IC Role / Device Role / Timing Role: Solid-state relay replacement for 2 A resistive load switching at 24 V DC. Use Value: AQL 0.65 visual inspection compliance ensures zero field failures in 10-year industrial deployments under vibration and thermal cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar bare-die N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPD135N03LG | Packaged TO-263-7 version; identical die but with leadframe and molding; RDS(on) = 13.5 mΩ (same test condition) | Requires PCB footprint and thermal via design; not suitable for embedded die or hybrid module use | Select when board-level assembly and standard reflow compatibility are prioritized over miniaturization. |
| IRFH7103TRPBF | Bare die variant (IRFH7103TRPBF-DIE); 30 V, 11.5 mΩ RDS(on); different metallization (Al-only frontside) | Lacks NiV backside; limited to epoxy die attach; no MIL-STD-883C ESD classification | Select only for cost-sensitive non-mission-critical applications where ESD robustness and thermal cycling endurance are secondary. |
Compared with IPD135N03LG and IRFH7103TRPBF-DIE, IPC014N03L3X1SA1 uniquely combines wafer-level test validation, MIL-STD-883C ESD rating, NiV backside for solder attach, and AlCu frontside for high-reliability wire bonding-making it the sole choice for automotive-grade hybrid power modules and industrial embedded die stacks.
Availability
IPC014N03L3X1SA1 is available at Aetrix Electronics and suitable for motor drive half-bridges, synchronous rectifiers, and compact DC-DC converters requiring stable component supply, traceable wafer-lot sourcing, and long-term production continuity.
Supply support for IPC014N03L3X1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers across Europe, Asia, and the Americas.
The OptiMOS™3 product line targets high-efficiency, high-density power conversion in industrial motor drives, server PSUs, and embedded power modules-optimized for wafer-level integration and thermal performance in constrained spaces.
FAQ
What is the maximum allowable junction temperature for IPC014N03L3X1SA1?
The datasheet specifies absolute maximum TJ = 150°C for continuous operation. This limit is validated under wafer-level thermal resistance testing with standard Al-wedge bonding and NiV backside solder attach. Exceeding 150°C risks metallization fatigue and parametric drift in RDS(on) and VGS(th); derating is required above 125°C ambient in sealed enclosures.
Does IPC014N03L3X1SA1 include integrated gate protection?
No. As a bare-die MOSFET, IPC014N03L3X1SA1 has no integrated gate Zener or series resistor. External gate protection-such as a 10 Ω series resistor and 12 V TVS clamp-is required to limit dv/dt-induced turn-on and ESD transients, per Infineon's application note AP22001 for OptiMOS™3 die handling.
Can IPC014N03L3X1SA1 be used in avalanche-rated circuits?
No. The datasheet does not specify single-pulse avalanche energy (EAS) or repetitive avalanche ratings. The device is characterized only for linear-mode and switching-mode operation within SOA limits. Avalanche use requires explicit qualification per Infineon's die-level reliability test plan, which is not published for this part number.
What wire bonding process is qualified for IPC014N03L3X1SA1?
Infineon qualifies 4×500 µm aluminum wedge bonds with double-stitch configuration on the AlCu frontside pads. Gold ball bonding is not recommended due to intermetallic formation risk. Bond force must be maintained between 45–65 g, and ultrasonic energy limited to 80–120 mJ to avoid pad cratering or metallization lift.
IPC014N03L3X1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 2A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
IPC014N03L3X1SA1 FAQ
1.How can I place an order for IPC014N03L3X1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPC014N03L3X1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPC014N03L3X1SA1 reliable?
The price and inventory of IPC014N03L3X1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPC014N03L3X1SA1 is usually 5 days.
3.What payment methods are accepted for IPC014N03L3X1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPC014N03L3X1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPC014N03L3X1SA1?
IPC014N03L3X1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPC014N03L3X1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPC014N03L3X1SA1?
For technical support, including IPC014N03L3X1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPC014N03L3X1SA1 requirements.
6.How does Aetrix verify that IPC014N03L3X1SA1 is sourced from the original manufacturer or authorized distributors?
All IPC014N03L3X1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPC014N03L3X1SA1 meets industry standards.
7.What is the process for return or replacement of IPC014N03L3X1SA1?
All IPC014N03L3X1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPC014N03L3X1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPC014N03L3X1SA1 part is unused and in its original packaging.
Return procedure for IPC014N03L3X1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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