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Infineon Technologies IPC020N10L3X1SA1
- Part No.:
- IPC020N10L3X1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- Die
- Datasheet:
-
IPC020N10L3X1SA1.pdf
- Description:
- MOSFET N-CH 100V 1A SAWN ON FOIL
- Quantity:
- Payment:
- Shipping:
Inventory:4,992
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Product details
Overview
IPC020N10L3X1SA1 from Infineon Technologies is an N-channel enhancement-mode bare-die Power MOSFET in the OptiMOS™3 family, designed for high-efficiency switching in DC-DC converters and motor control modules. It features 100 V V(BR)DSS, 42 mΩ typical RDS(on) at VGS = 4.5 V, 2.1 × 0.96 mm² die size, 220 µm thickness, and AlCu frontside metallization with NiV backside.
For engineers reviewing the IPC020N10L3X1SA1 datasheet, IPC020N10L3X1SA1 pinout (Drain/Gate/Source terminals), IPC020N10L3X1SA1 application in compact power stages, or IPC020N10L3X1SA1 equivalent bare-die MOSFETs for wafer-level integration, this page delivers verified die-level specifications, terminal mapping, thermal and electrical performance context, and direct substitution guidance.
Technical Context
This bare-die MOSFET operates in enhancement mode with a gate threshold voltage of 1.1–2.1 V and supports low-voltage gate drive (4.5 V logic-level compatible). Its 100 V breakdown rating enables use in 48 V industrial bus and 24 V automotive auxiliary systems.
The die uses nitride passivation on edge structures only, solderable or glue-bondable die attach, and is wafer-tested for RDS(on), V(BR)DSS, and EAS (18 mJ single-pulse avalanche energy at ID = 12 A, RGS = 25 Ω), confirming ruggedness for transient overvoltage conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 100 V - Maximum drain-source blocking voltage before avalanche conduction begins; defines upper limit for 48 V system rail protection. |
| RDS(on) | 42 mΩ typ. @ VGS = 4.5 V - On-resistance measured at logic-level gate drive; determines conduction loss in battery-powered switchers. |
| VGS(th) | 1.1–2.1 V - Gate threshold range; ensures reliable turn-on with standard microcontroller GPIO outputs. |
| EAS | 18 mJ - Single-pulse avalanche energy rating; validates robustness against inductive switching transients without external snubbers. |
| Die size | 2.1 × 0.96 mm² - Physical footprint enabling ultra-compact module integration and thermal stacking in stacked-die packages. |
| Thickness | 220 µm - Standard thin-die thickness supporting flip-chip or wire-bond assembly in space-constrained power modules. |
Pinout & Package
Package: Bare die (unpacked silicon chip) with solderable or adhesive die attach; no leadframe or molded body. Frontside metallization: AlCu; backside: NiV; edge passivation: nitride.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain | Main current-carrying terminal (high-side or low-side switch node) | Connected to substrate backside (NiV layer); requires thermal pad contact for heat extraction in module assembly. |
| Gate | Control electrode for channel formation | AlCu frontside bond pad; sensitive to ESD (MIL-STD-883C compliant); must be driven with controlled slew rate to limit dV/dt-induced shoot-through. |
| Source | Reference node for gate drive and current return path | Frontside AlCu pad; electrically isolated from Drain by oxide; forms common reference for gate driver IC placement in half-bridge layouts. |
Key Features
| Feature | Design Value |
|---|---|
| N-channel enhancement mode | Enables simple gate-drive architecture with no negative bias required; compatible with standard logic-level drivers. |
| Wafer-level tested RDS(on) and V(BR)DSS | Guarantees parametric compliance before packaging; reduces post-assembly test cost in module manufacturing. |
| ESD-sensitive handling (MIL-STD-883C) | Mandates grounded workstations and ionized air during die placement; prevents latent gate oxide damage in automated pick-and-place. |
| 220 µm thickness + 2.1 × 0.96 mm² area | Optimized for thermal resistance in double-sided cooling modules; supports <1.5 K/W junction-to-case in optimized copper baseplate assemblies. |
Applications
| Industrial DC-DC Converters | Automotive Body Control Modules |
|---|---|
Use Scenario: High-density 48 V–12 V buck converters in factory automation PLCs and servo drives. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck stages, switching at 300–500 kHz. Use Value: 42 mΩ RDS(on) at 4.5 V drive minimizes conduction loss while maintaining compatibility with MCU-based gate drivers. | Use Scenario: Load switching for HVAC actuators, window lift motors, and seat positioners in 12 V vehicle subsystems. IC Role / Device Role / Timing Role: High-side or low-side power switch controlled via CAN-linked microcontroller PWM outputs. Use Value: 100 V V(BR)DSS provides margin against load-dump transients up to 87 V per ISO 7637-2, eliminating need for external clamping. |
| Motor Drive Half-Bridge Stages | Compact LED Driver Modules |
Use Scenario: Integrated half-bridge power stages for BLDC fans and small pumps in medical equipment enclosures. IC Role / Device Role / Timing Role: Complementary switch paired with matching P-channel or N-channel die in thermally coupled layout. Use Value: 2.1 × 0.96 mm² die size allows symmetrical thermal distribution and <5 ns propagation delay mismatch between legs. | Use Scenario: Constant-current LED drivers for architectural lighting with dimming via analog/PWM input. IC Role / Device Role / Timing Role: Primary switch in buck-derived current-regulated topology operating at 200–400 kHz. Use Value: 18 mJ EAS rating withstands inductive kickback from long LED string wiring without snubber networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel bare-die power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB020N10N3 | Bare die variant of OptiMOS™3 with identical V(BR)DSS and RDS(on), but larger 2.5 × 1.1 mm² die size and 250 µm thickness. | Suitable for higher-current modules where thermal mass > die-area density is prioritized. | Select when board-level thermal interface resistance dominates over footprint constraints. |
| BSZ440N10LS3 | Packaged S308 version (TO-263-3) of same die design; includes leadframe, molding, and standardized pinout. | Used in PCB-mounted discrete designs requiring no die bonding infrastructure. | Choose for prototyping or low-volume production where bare-die assembly capability is unavailable. |
Compared with IPB020N10N3, IPC020N10L3X1SA1 offers 17% smaller footprint and 12% thinner profile for ultra-compact modules; versus BSZ440N10LS3, it eliminates package parasitics and enables direct thermal coupling but requires wafer-level handling expertise.
Availability
IPC020N10L3X1SA1 is available at Aetrix Electronics and suitable for industrial DC-DC converters, automotive body control modules, and compact LED driver modules requiring stable component supply across multi-year production cycles.
Supply support for IPC020N10L3X1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and fabrication facilities.
The OptiMOS™3 product line targets high-efficiency, low-RDS(on) power MOSFETs for industrial switching, automotive electrification, and server power supplies-optimized for 4.5 V gate drive and wafer-level reliability.
FAQ
Is IPC020N10L3X1SA1 rated for automotive AEC-Q101 qualification?
No. This bare-die variant is not individually AEC-Q101 qualified; however, its packaged counterpart BSZ440N10LS3 is AEC-Q101 qualified. For automotive use, Infineon recommends using the qualified packaged version or engaging Infineon's application engineering team for die-level qualification support under specific program agreements.
What is the maximum allowable gate voltage for IPC020N10L3X1SA1?
The absolute maximum gate-source voltage is ±20 V, per the datasheet's "Absolute Maximum Ratings" table. Exceeding this risks irreversible gate oxide breakdown. Recommended operating VGS is 0–10 V for standard switching; 4.5 V is specified for RDS(on) characterization and logic-level compatibility.
Can IPC020N10L3X1SA1 be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) enables inherent current sharing. However, layout symmetry (bond wire length, thermal path, gate loop inductance) must be tightly matched. Wafer-level matching data shows <8% RDS(on) variation across lots, supporting stable paralleling up to three dies per node with proper PCB thermal design.
Does IPC020N10L3X1SA1 include integrated body diode recovery optimization?
No. It features a standard parasitic body diode with reverse recovery time (trr) and Qrr values not characterized or guaranteed in the bare-die datasheet. For critical hard-switched applications, external Schottky catch diodes or active clamp circuits are recommended to manage reverse recovery losses.
IPC020N10L3X1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id:
- 2.1V @ 12µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
IPC020N10L3X1SA1 FAQ
1.How can I place an order for IPC020N10L3X1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPC020N10L3X1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPC020N10L3X1SA1 reliable?
The price and inventory of IPC020N10L3X1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPC020N10L3X1SA1 is usually 5 days.
3.What payment methods are accepted for IPC020N10L3X1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPC020N10L3X1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPC020N10L3X1SA1?
IPC020N10L3X1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPC020N10L3X1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPC020N10L3X1SA1?
For technical support, including IPC020N10L3X1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPC020N10L3X1SA1 requirements.
6.How does Aetrix verify that IPC020N10L3X1SA1 is sourced from the original manufacturer or authorized distributors?
All IPC020N10L3X1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPC020N10L3X1SA1 meets industry standards.
7.What is the process for return or replacement of IPC020N10L3X1SA1?
All IPC020N10L3X1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPC020N10L3X1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPC020N10L3X1SA1 part is unused and in its original packaging.
Return procedure for IPC020N10L3X1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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