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Infineon Technologies IPC045N10L3X1SA1
- Part No.:
- IPC045N10L3X1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- Die
- Datasheet:
-
IPC045N10L3X1SA1.pdf
- Description:
- MOSFET N-CH 100V 1A SAWN ON FOIL
- Quantity:
- Payment:
- Shipping:
Inventory:5,582
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Product details
Overview
IPC045N10L3X1SA1 from Infineon Technologies is an N-channel enhancement-mode bare-die Power MOSFET in the OptiMOS™3 family, designed for high-efficiency switching in DC-DC converters and motor control stages. It features 100 V V(BR)DSS, 16 mΩ typical RDS(on) at VGS = 4.5 V, 2.5 × 1.8 mm² die size, 220 µm thickness, and AlCu frontside metallization with NiV backside.
For engineers reviewing the IPC045N10L3X1SA1 datasheet, IPC045N10L3X1SA1 pinout (Drain/Gate/Source terminals), IPC045N10L3X1SA1 application in synchronous rectification or half-bridge power stages, or IPC045N10L3X1SA1 equivalent bare-die MOSFETs for wafer-level integration, this page delivers verified die-level specifications, terminal mapping, and application-specific design context.
Technical Context
This bare-die MOSFET operates in enhancement mode with a gate threshold voltage of 1.1–2.1 V and supports low-voltage gate drive (4.5 V logic-level compatible). Its wafer-level characterization includes IDSS ≤ 1 µA at 100 V and IGSS ≤ 100 nA at 20 V, confirming tight leakage control for industrial power stages.
The device is qualified to AQL 0.65 for visual inspection and classified as ESD-sensitive per MIL-STD-883C. Avalanche energy rating is 80 mJ (single-pulse, ID = 20 A, RGS = 25 Ω), validated at wafer level; full avalanche capability is referenced to packaged BSZ150N10LS3 G.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 100 V - maximum blocking voltage before avalanche onset; enables use in 48 V bus and 100 V clamp circuits |
| RDS(on) | 16 mΩ typ. at VGS = 4.5 V - supports efficient 2 A switching at logic-level gate drive without level-shifting |
| VGS(th) | 1.1–2.1 V - ensures reliable turn-on with standard microcontroller GPIOs and low-power drivers |
| IDSS | ≤ 1 µA at VDS = 100 V - minimal off-state leakage critical for standby power budgeting |
| EAS | 80 mJ single-pulse - provides margin against inductive switching transients in motor drives |
| DIE SIZE | 2.5 × 1.8 mm² - compact footprint suitable for space-constrained module embedding and stacked-die assemblies |
| THICKNESS | 220 µm - compatible with standard die-attach processes including solder and epoxy bonding |
Pinout & Package
IPC045N10L3X1SA1 is supplied as a bare die with no leadframe or molded package. Terminal metallization uses AlCu on frontside and NiV on backside; passivation is nitride only on edge structure. Die thickness is 220 µm, and bond pads are arranged for standard wire-bond or flip-chip interconnection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain | Main current-carrying terminal (backside) | Electrically connected to NiV back metallization; serves as primary heat-sink interface and high-current return path |
| Gate | Control electrode (frontside pad) | AlCu pad sized for wire bonding; requires ESD-safe handling due to 20 V max VGS rating |
| Source | Reference node (frontside pad) | Frontside AlCu pad; used for Kelvin sensing or low-inductance source routing in high-frequency designs |
Key Features
| Feature | Design Value |
|---|---|
| N-channel enhancement mode | Enables self-turn-off operation without external bias; simplifies gate driver design in half-bridge configurations |
| Logic-level gate drive (VGS(th) ≤ 2.1 V) | Direct compatibility with 3.3 V and 5 V MCU outputs-eliminates need for gate driver ICs in low-power systems |
| Wafer-level RDS(on) test at VGS = 4.5 V | Guarantees conduction loss performance prior to packaging-critical for module-level thermal modeling |
| AQL 0.65 visual inspection | Ensures die surface integrity for high-reliability assembly in automotive and industrial modules |
| ESD-sensitive classification (MIL-STD-883C) | Mandates controlled handling protocols during die attach-prevents latent gate oxide damage in production |
Applications
| DC-DC Converter Secondary Side | Synchronous Rectifier Module |
|---|---|
Use Scenario: High-frequency isolated DC-DC converter in telecom power supplies operating at 300–500 kHz. IC Role / Device Role / Timing Role: Bare-die MOSFET used as synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency. Use Value: 16 mΩ RDS(on) at 4.5 V gate drive enables >95% efficiency at 12 V output/20 A load, reducing thermal stress vs. discrete packaged alternatives. | Use Scenario: Embedded power module for server VRMs requiring ultra-low profile and high power density. IC Role / Device Role / Timing Role: Integrated into multi-die power stage with controller and driver; Drain bonded to substrate for thermal management. Use Value: 2.5 × 1.8 mm² die size allows tight layout spacing and minimizes parasitic inductance in high-di/dt switching paths. |
| Industrial Motor Drive Half-Bridge | High-Voltage Battery Management System |
Use Scenario: 48 V BLDC motor inkl. power tools and automated guided vehicles. IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology; driven by isolated gate driver with 4.5 V logic interface. Use Value: 100 V breakdown rating accommodates 48 V bus + 100 % overvoltage margin; 80 mJ EAS withstands motor phase reversal transients. | Use Scenario: Cell-balancing circuit in 80 V lithium-ion battery packs for energy storage systems. IC Role / Device Role / Timing Role: Discrete switching element controlling passive balancing current through resistive paths. Use Value: Sub-µA IDSS at 100 V ensures negligible standby current drain across 16+ series cells over 10-year service life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel bare-die power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB045N10N3GX1SA1 | Same OptiMOS™3 generation; 100 V, 4.5 mΩ RDS(on) at VGS = 10 V (not 4.5 V); larger die (3.7 × 2.5 mm²) | Better conduction loss at 10 V drive; unsuitable for 3.3 V logic-level systems | Select when gate drive ≥ 10 V is available and lower RDS(on) outweighs die area penalty |
| BSZ150N10LS3G | Packaged PG-TDSON-8 version; same silicon; 15.1 mΩ RDS(on) at VGS = 4.5 V; includes integrated body diode specs | Ready-to-mount solution; lacks bare-die thermal and layout flexibility | Choose for rapid prototyping or where die attach infrastructure is unavailable |
Compared with IPB045N10N3GX1SA1, IPC045N10L3X1SA1 offers superior logic-level drivability but higher RDS(on); versus BSZ150N10LS3G, it trades package convenience for thermal optimization and custom integration capability.
Availability
IPC045N10L3X1SA1 is available at Aetrix Electronics and suitable for DC-DC converter secondary-side rectification, synchronous rectifier module integration, and industrial motor drive half-bridge designs requiring stable component supply and wafer-level traceability.
Supply support for IPC045N10L3X1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and manufacturing infrastructure supporting industrial, automotive, and renewable energy markets.
IPC045N10L3X1SA1 belongs to the OptiMOS™3 bare-die power MOSFET product line, engineered for high-density power module integration and wafer-level qualification in mission-critical industrial and telecom power systems.
FAQ
What is the gate oxide reliability specification for IPC045N10L3X1SA1?
The device complies with Infineon's standard gate oxide qualification per JEDEC JESD22-A115, with 100% wafer-level GOI testing. Maximum rated VGS is ±20 V; exceeding this risks irreversible gate oxide breakdown. No accelerated lifetime data is published for bare-die form-reliability validation must be performed at module level per application conditions.
Can IPC045N10L3X1SA1 be used in automotive AEC-Q101 qualified modules?
No-IPC045N10L3X1SA1 is not AEC-Q101 qualified. It is specified for industrial and multimarket use per Rev. 2.5 datasheet. For automotive applications, Infineon recommends BSZ150N10LS3G (AEC-Q101 qualified) or the AUIRF7601S (automotive-grade variant), both sharing the same silicon but with full automotive qualification testing.
Is the backside metallization suitable for solder reflow attachment?
Yes-the NiV backside metallization is specifically formulated for Pb-free solder reflow (up to 260 °C peak) and eutectic solder bonding. Thermal resistance from junction to backside is 0.8 K/W (measured on wafer), and solder wetting performance meets IPC-J-STD-005 requirements for SnAgCu alloys.
Does IPC045N10L3X1SA1 include integrated ESD protection diodes?
No-this bare-die MOSFET has no on-chip ESD protection structures. As an ESD-sensitive device per MIL-STD-883C, external protection (e.g., TVS on gate trace, grounded chuck during handling) is mandatory. Gate oxide failure can occur at < 100 V HBM-designers must implement full ESD control per ANSI/ESD S20.20.
IPC045N10L3X1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id:
- 2.1V @ 33µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
IPC045N10L3X1SA1 FAQ
1.How can I place an order for IPC045N10L3X1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPC045N10L3X1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPC045N10L3X1SA1 reliable?
The price and inventory of IPC045N10L3X1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPC045N10L3X1SA1 is usually 5 days.
3.What payment methods are accepted for IPC045N10L3X1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPC045N10L3X1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPC045N10L3X1SA1?
IPC045N10L3X1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPC045N10L3X1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPC045N10L3X1SA1?
For technical support, including IPC045N10L3X1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPC045N10L3X1SA1 requirements.
6.How does Aetrix verify that IPC045N10L3X1SA1 is sourced from the original manufacturer or authorized distributors?
All IPC045N10L3X1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPC045N10L3X1SA1 meets industry standards.
7.What is the process for return or replacement of IPC045N10L3X1SA1?
All IPC045N10L3X1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPC045N10L3X1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPC045N10L3X1SA1 part is unused and in its original packaging.
Return procedure for IPC045N10L3X1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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