My Inquiry
My Account
Infineon Technologies IPC045N10N3X1SA1
- Part No.:
- IPC045N10N3X1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- Die
- Datasheet:
-
IPC045N10N3X1SA1.pdf
- Description:
- MOSFET N-CH 100V 1A SAWN ON FOIL
- Quantity:
- Payment:
- Shipping:
Inventory:6,259
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IPC045N10N3X1SA1 from Infineon Technologies is an N-channel enhancement-mode bare-die Power MOSFET in the OptiMOS™3 family, designed for high-efficiency switching in DC-DC converters and motor control modules. It features 100 V V(BR)DSS, 15.2 mΩ typical RDS(on) at VGS = 10 V and ID = 2.0 A, 2.5 × 1.8 mm² die size, 220 µm thickness, and AlCu frontside metallization with NiV backside.
For engineers reviewing the IPC045N10N3X1SA1 datasheet, IPC045N10N3X1SA1 pinout (Drain/Gate/Source terminals), IPC045N10N3X1SA1 application in high-density power modules, or IPC045N10N3X1SA1 equivalent for wafer-level integration, this page delivers verified die-level specifications, terminal mapping, thermal and electrical performance context, and validated alternative bare-die options.
Technical Context
This bare-die MOSFET operates in enhancement mode with gate threshold voltage VGS(th) ranging from 2.0 V to 3.5 V at VDS = VGS and ID = 33 µA. Its zero-gate-voltage drain current IDSS is limited to 1 µA at VDS = 100 V, and gate-source leakage IGSS remains ≤100 nA at VGS = 20 V.
The device is wafer-tested for avalanche energy EAS = 45 mJ under single-pulse conditions (ID = 30 A, RGS = 25 Ω), and its RDS(on) is characterized at wafer level with typical value of 15.2 mΩ - lower than the packaged IPP180N10N3G's 18.0 mΩ due to absence of bondwire and package parasitics.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 100 V - maximum blocking voltage before avalanche onset; enables use in 48 V industrial bus and 24 V automotive subsystems |
| RDS(on) typ. | 15.2 mΩ at VGS = 10 V, ID = 2.0 A - wafer-level on-resistance; lower than packaged variants due to no interconnect losses |
| VGS(th) | 2.7 V typical - ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers |
| IDSS max. | 1 µA at VDS = 100 V - low off-state leakage supports standby power budgets in always-on systems |
| EAS | 45 mJ - single-pulse avalanche capability measured on wafer; informs ruggedness in inductive switching |
| Die size | 2.5 × 1.8 mm² - compact footprint suitable for stacked-die modules and space-constrained hybrid assemblies |
| Thickness | 220 µm - compatible with standard die-attach processes including soldering and conductive epoxy bonding |
Pinout & Package
IPC045N10N3X1SA1 is supplied as a bare die without leadframe or molded package. The die uses standard top-side metallization layout with three exposed terminals: Drain (entire backside, NiV), Gate (front-side pad), and Source (front-side pad). Bonding is performed via solder or conductive adhesive.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain | High-current output node | Backside NiV metallization; requires thermal and electrical connection to heatsink or substrate |
| Gate | Control input | Front-side AlCu pad; sensitive to ESD (JEDEC Class 1C); must be driven with controlled slew rate |
| Source | Reference return path | Front-side AlCu pad; forms common reference for gate drive and current sensing |
Key Features
| Feature | Design Value |
|---|---|
| N-channel enhancement mode | Enables self-turn-off operation and simplifies gate drive design versus depletion-mode devices |
| AlCu frontside / NiV backside metallization | Supports robust wire bonding and solder die-attach while minimizing intermetallic growth at elevated temperatures |
| Nitride edge passivation | Protects active die periphery from moisture and contamination during module assembly and long-term operation |
| AQL 0.65 visual inspection | Ensures high yield in automated die placement and reduces field failure risk in mission-critical power modules |
Applications
| Motor Control Module | DC-DC Converter Core |
|---|---|
Use Scenario: Integrated half-bridge in BLDC motor driver for HVAC blowers and industrial pumps. IC Role / Device Role / Timing Role: High-side and low-side switching element in synchronous rectification topology. Use Value: 15.2 mΩ RDS(on) minimizes conduction loss at 2–5 A continuous load, improving efficiency by >1.2% over legacy 25 mΩ dies. | Use Scenario: Primary-side switch in isolated 48 V-to-12 V buck-boost converter for telecom base station power supplies. IC Role / Device Role / Timing Role: Main switching transistor operating at 200–500 kHz with hard-switched PWM. Use Value: 100 V rating and 45 mJ EAS support safe operation under transient overvoltage and inductive kickback events. |
| Power Module Substrate | Automotive Body Control Unit |
Use Scenario: Stacked-die configuration with SiC diode on ceramic DBC substrate for traction inverter auxiliary supply. IC Role / Device Role / Timing Role: Low-voltage auxiliary rail switch enabling fast dynamic response and reduced thermal coupling. Use Value: 2.5 × 1.8 mm² die size allows precise layout matching to thermal vias and current paths, lowering junction-to-case resistance by ~12%. | Use Scenario: Load switch for LED headlamp dimming and window lift motor control in BCM modules. IC Role / Device Role / Timing Role: Protected high-side switch with integrated gate protection and thermal monitoring interface. Use Value: VGS(th) = 2.7 V typical ensures compatibility with 3.3 V microcontroller GPIO, eliminating need for level-shifting circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar bare-die N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP180N10N3 G | Packaged TO-220 variant; RDS(on) = 18.0 mΩ; includes bondwires and plastic housing | Suitable for discrete PCB mounting; not for direct die bonding or multichip modules | Select when board-level assembly and manual rework are required instead of hybrid packaging. |
| IPB180N10N3 G | PG-TO263-3 package; same die but with copper clip; RDS(on) = 17.5 mΩ; higher thermal conductivity | Better suited for high-power surface-mount designs with forced-air cooling | Choose when thermal resistance < 2.5 K/W is mandatory and die-level integration is unnecessary. |
Compared with IPP180N10N3 G and IPB180N10N3 G, IPC045N10N3X1SA1 offers lowest RDS(on) and smallest footprint but requires custom die-attach and wire-bonding infrastructure - making it optimal for volume power module manufacturing rather than prototyping or single-board use.
Availability
IPC045N10N3X1SA1 is available at Aetrix Electronics and suitable for high-density power modules, automotive body control units, and industrial motor drives requiring stable component supply across multi-year production cycles.
Supply support for IPC045N10N3X1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The OptiMOS™3 product line targets high-efficiency, high-reliability power switching in space-constrained and thermally demanding applications such as server VRMs, e-mobility subsystems, and programmable logic controller outputs.
FAQ
Is IPC045N10N3X1SA1 RoHS-compliant and halogen-free?
Yes. Per Infineon's official documentation (Rev. 2.5, 2014), IPC045N10N3X1SA1 meets RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. The die uses NiV backside and AlCu frontside metallization with nitride edge passivation - all compliant materials confirmed in the product's material declaration.
What is the maximum allowable junction temperature for continuous operation?
The datasheet specifies TJ(max) = 175 °C for continuous operation. This limit is derived from wafer-level characterization and applies under steady-state thermal conditions with proper die-attach quality and substrate thermal resistance ≤ 1.8 K/W. Derating is required above 150 °C ambient in sealed enclosures.
Does IPC045N10N3X1SA1 include integrated gate protection?
No. As a bare-die MOSFET, IPC045N10N3X1SA1 has no integrated gate protection circuitry. External gate resistors (≥10 Ω), TVS clamps, and controlled drive slew rates must be implemented in the module design to prevent ESD damage and oscillation - consistent with JEDEC Class 1C ESD sensitivity noted in the datasheet.
Can IPC045N10N3X1SA1 be used in parallel configurations?
Yes, but only with matched die sorting and symmetrical layout. The datasheet confirms positive temperature coefficient of RDS(on), enabling current sharing. Successful parallel operation requires identical thermal paths, <50 µm die height tolerance, and gate drive skew <2 ns - practices validated in Infineon's OptiMOS™3 multi-die reference designs for 48 V server power stages.
IPC045N10N3X1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Not For New Designs
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 33µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
IPC045N10N3X1SA1 FAQ
1.How can I place an order for IPC045N10N3X1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPC045N10N3X1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPC045N10N3X1SA1 reliable?
The price and inventory of IPC045N10N3X1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPC045N10N3X1SA1 is usually 5 days.
3.What payment methods are accepted for IPC045N10N3X1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPC045N10N3X1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPC045N10N3X1SA1?
IPC045N10N3X1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPC045N10N3X1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPC045N10N3X1SA1?
For technical support, including IPC045N10N3X1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPC045N10N3X1SA1 requirements.
6.How does Aetrix verify that IPC045N10N3X1SA1 is sourced from the original manufacturer or authorized distributors?
All IPC045N10N3X1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPC045N10N3X1SA1 meets industry standards.
7.What is the process for return or replacement of IPC045N10N3X1SA1?
All IPC045N10N3X1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPC045N10N3X1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPC045N10N3X1SA1 part is unused and in its original packaging.
Return procedure for IPC045N10N3X1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IPC045N10N3X1SA1 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
