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Infineon Technologies IPC055N03L3X1SA1
- Part No.:
- IPC055N03L3X1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- Die
- Datasheet:
-
IPC055N03L3X1SA1.pdf
- Description:
- MOSFET N-CH 30V 1A SAWN ON FOIL
- Quantity:
- Payment:
- Shipping:
Inventory:6,247
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Product details
Overview
IPC055N03L3X1SA1 from Infineon Technologies is an N-channel enhancement-mode bare-die Power MOSFET in the OptiMOS™3 family, designed for high-efficiency DC-DC conversion and synchronous rectification. It features 30 V V(BR)DSS, 2.7 mΩ typical RDS(on) at VGS = 10 V / ID = 2.0 A, 3.28 × 1.68 mm² die size, and NiV backside metallization - deployed in industrial power modules and automotive body control units.
For engineers reviewing the IPC055N03L3X1SA1 datasheet, IPC055N03L3X1SA1 pinout (Drain/Gate/Source terminals), IPC055N03L3X1SA1 application in synchronous buck converters or OR-ing circuits, or IPC055N03L3X1SA1 equivalent bare-die MOSFETs with sub-3 mΩ on-resistance and 30 V rating, this page delivers verified die-level specifications, terminal mapping, and validated alternatives for wafer-level integration.
Technical Context
This bare-die MOSFET operates in enhancement mode with gate threshold voltage between 1.0 V and 2.2 V, enabling logic-level drive compatibility. Its RDS(on) is characterized at wafer level under controlled thermal conditions (Tj = 25°C), with test limits defined by equipment capability (e.g., 50 mΩ ceiling for VGS = 4.5 V testing).
The die uses AlCu frontside metallization and NiV backside metallization, supporting solder or epoxy die attach. It is ESD-sensitive per MIL-STD-883C and subject to AQL 0.65 visual inspection - intended for integration into custom packages where thermal and parasitic optimization are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 30 V - maximum drain-source blocking voltage before avalanche onset; defines safe operating range in 24 V systems |
| RDS(on) typ. | 2.7 mΩ at VGS = 10 V / ID = 2.0 A - enables <1 W conduction loss at 20 A in optimized module layouts |
| VGS(th) | 1.0–2.2 V - ensures turn-on with standard 3.3 V or 5 V logic drivers without level shifting |
| Die size | 3.28 × 1.68 mm² - compact footprint suitable for space-constrained multichip power modules |
| Thickness | 175 µm - supports thin-package assembly and low-inductance interconnects in stacked-die configurations |
| EAS | 90 mJ - single-pulse avalanche energy rating at ID = 50 A / RGS = 25 Ω; validates robustness during transient overloads |
Pinout & Package
IPC055N03L3X1SA1 is supplied as a bare die with three exposed metal terminals: Drain (backside), Gate (frontside edge), and Source (frontside center). The die uses NiV backside metallization (Drain) and AlCu frontside metallization (Gate/Source), compatible with solder or conductive epoxy die attach.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Backside metallization | Drain | Primary current-carrying terminal; thermally coupled to heatsink via backside attach |
| Frontside AlCu pad (edge) | Gate | Control input; requires low-inductance wirebond or flip-chip connection to minimize switching losses |
| Frontside AlCu pad (center) | Source | Reference node for gate drive; layout symmetry minimizes source inductance in paralleled configurations |
Key Features
| Feature | Design Value |
|---|---|
| N-channel enhancement mode | Enables self-turn-off behavior and simplifies gate drive design in half-bridge and synchronous rectifier topologies |
| OptiMOS™3 process technology | Delivers 2.7 mΩ RDS(on) in 3.28 × 1.68 mm² die area - 22% lower on-resistance density vs. prior OptiMOS™2 generation |
| AlCu frontside / NiV backside metallization | Supports reliable thermal cycling and high-current wirebonding (up to 4×500 µm Al wedge bonds) without intermetallic degradation |
| Avalanche-rated (EAS = 90 mJ) | Withstands unclamped inductive switching events in motor drives and solenoid controls without parametric shift or failure |
Applications
| Server VRM Power Stage | Automotive Body Control Module |
|---|---|
Use Scenario: High-density 12 V → 1 V/100 A point-of-load converter in AI accelerator servers. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in multiphase buck converter; replaces Schottky diode to reduce conduction loss by >40%. Use Value: 2.7 mΩ RDS(on) enables <0.5 W conduction loss per phase at 25 A, directly improving VRM efficiency and thermal margin. | Use Scenario: Load switch for 12 V lighting and HVAC actuators in centralized body domain controller. IC Role / Device Role / Timing Role: Low-side switch controlling resistive/inductive loads; driven by 3.3 V microcontroller GPIO. Use Value: 1.0–2.2 V VGS(th) ensures full enhancement at 3.3 V drive, eliminating need for external gate driver ICs. |
| Industrial Motor Drive Inverter | Telecom DC-DC Intermediate Bus Converter |
Use Scenario: Half-bridge leg in 24 V BLDC inverter for factory automation conveyors. IC Role / Device Role / Timing Role: High-side and low-side switching element; integrated into custom ceramic substrate module with SiC gate driver. Use Value: 90 mJ EAS rating withstands flyback energy during short-circuit events, reducing need for external snubbers. | Use Scenario: Primary-side switch in 48 V → 12 V isolated forward converter for base station power shelves. IC Role / Device Role / Timing Role: High-frequency (300 kHz) hard-switched MOSFET; mounted on copper-inlay PCB for enhanced thermal spreading. Use Value: 175 µm thickness and 3.28 × 1.68 mm² footprint enable low-profile, low-parasitic packaging - critical for EMI compliance at 300+ kHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V bare-die MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB050N03LG | Bare die variant of same OptiMOS™3 platform; 2.5 mΩ RDS(on) at VGS = 10 V but larger 4.1 × 2.1 mm² die size | Higher current handling (ID,max = 120 A vs. 100 A) at cost of 35% larger footprint | Select when higher pulse current capability outweighs board space constraints |
| IRFH7103TRPBF | 30 V TrenchFET® Gen IV bare die; 2.8 mΩ RDS(on); Al frontside only, no NiV backside | Lacks NiV backside metallization - limits thermal cycling reliability in automotive under-hood modules | Prefer for cost-sensitive telecom power where thermal cycling is less severe than automotive |
Compared with IPC055N03L3X1SA1, IPB050N03LG trades footprint for higher current headroom, while IRFH7103TRPBF offers comparable on-resistance but reduced thermal interface durability - making IPC055N03L3X1SA1 optimal for space-constrained, high-reliability industrial modules requiring both low RDS(on) and proven NiV backside performance.
Availability
IPC055N03L3X1SA1 is available at Aetrix Electronics and suitable for server VRMs, automotive body control modules, and industrial motor drives requiring stable component supply and wafer-level traceability.
Supply support for IPC055N03L3X1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
IPC055N03L3X1SA1 belongs to the OptiMOS™3 Power MOS Transistor Chip product line, engineered specifically for high-power-density, wafer-level integration into custom power modules and hybrid packages.
FAQ
Is IPC055N03L3X1SA1 supplied with a leadframe or pre-molded package?
No. IPC055N03L3X1SA1 is delivered as a bare die only - no leadframe, mold compound, or pre-attached bond wires. It requires customer-specific assembly into custom packages using die attach, wire bonding, or flip-chip processes per Infineon's wafer-level qualification guidelines.
What is the maximum continuous drain current rating for IPC055N03L3X1SA1?
The datasheet does not specify a fixed ID,cont rating because thermal performance depends entirely on the user's package design, heatsinking, and mounting method. At 25°C case temperature and 2.7 mΩ RDS(on), theoretical conduction-limited current exceeds 100 A - but practical limits are set by junction-to-case thermal resistance achieved in the final module.
Does IPC055N03L3X1SA1 include integrated gate protection diodes?
No. This bare-die MOSFET has no integrated gate protection structures. External gate resistors and TVS diodes must be implemented in the application circuit to limit dv/dt-induced gate stress and ESD transients, consistent with MIL-STD-883C Class 1A handling requirements.
Can IPC055N03L3X1SA1 be used in parallel configurations?
Yes - its positive temperature coefficient of RDS(on) and matched threshold voltage distribution across wafers enable stable current sharing. Successful paralleling requires symmetrical PCB layout, matched gate drive paths, and identical die attach quality to avoid thermal runaway between units.
IPC055N03L3X1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
IPC055N03L3X1SA1 FAQ
1.How can I place an order for IPC055N03L3X1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPC055N03L3X1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPC055N03L3X1SA1 reliable?
The price and inventory of IPC055N03L3X1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPC055N03L3X1SA1 is usually 5 days.
3.What payment methods are accepted for IPC055N03L3X1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPC055N03L3X1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPC055N03L3X1SA1?
IPC055N03L3X1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPC055N03L3X1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPC055N03L3X1SA1?
For technical support, including IPC055N03L3X1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPC055N03L3X1SA1 requirements.
6.How does Aetrix verify that IPC055N03L3X1SA1 is sourced from the original manufacturer or authorized distributors?
All IPC055N03L3X1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPC055N03L3X1SA1 meets industry standards.
7.What is the process for return or replacement of IPC055N03L3X1SA1?
All IPC055N03L3X1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPC055N03L3X1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPC055N03L3X1SA1 part is unused and in its original packaging.
Return procedure for IPC055N03L3X1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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