My Inquiry
My Account
Infineon Technologies IPC173N10N3X1SA1
- Part No.:
- IPC173N10N3X1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- Die
- Datasheet:
-
IPC173N10N3X1SA1.pdf
- Description:
- MOSFET N-CH 100V 1A SAWN ON FOIL
- Quantity:
- Payment:
- Shipping:
Inventory:9,378
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IPC173N10N3X1SA1 from Infineon is an N-channel enhancement-mode bare-die Power MOSFET in the OptiMOS™3 family, designed for high-efficiency power conversion in industrial switching applications. It delivers 100 V V(BR)DSS, 3.6 mΩ typical RDS(on) at VGS = 10 V and ID = 2.0 A, 5.762 × 3.0 mm² die size, and 220 µm thickness - optimized for low-loss synchronous rectification and DC-DC converter primary-side switching.
For engineers reviewing the IPC173N10N3X1SA1 datasheet, IPC173N10N3X1SA1 pinout, IPC173N10N3X1SA1 application, or IPC173N10N3X1SA1 equivalent, key selection criteria include wafer-level RDS(on) tolerance (3.6–100 mΩ), avalanche energy rating (45 mJ, single-pulse), gate threshold voltage range (2.0–3.5 V), and bare-die handling requirements (ESD-sensitive, NiV backside, AlCu frontside).
Technical Context
This bare-die MOSFET operates in enhancement mode with a fixed gate threshold voltage window (2.0–3.5 V) and exhibits low on-resistance due to optimized trench-gate process and thin-oxide design. Its 100 V breakdown voltage supports 48 V bus systems with margin, while the 45 mJ single-pulse avalanche rating enables robustness against inductive turn-off transients without external snubbers.
The device is characterized at wafer level (not packaged), with RDS(on) measured under VGS = 10 V and ID = 2.0 A, and IDSS limited to 1 µA at VDS = 100 V. Passivation uses nitride only on edge structure, and die metallization employs AlCu frontside and NiV backside - critical for thermal interface compatibility in hybrid module assembly.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 100 V - supports 48 V nominal input systems with ≥2× safety margin against transient overvoltage |
| RDS(on) typ. | 3.6 mΩ at VGS = 10 V, ID = 2.0 A - enables <1 W conduction loss at 20 A in parallel-configured modules |
| VGS(th) | 2.0–3.5 V - ensures reliable turn-on with standard 3.3 V or 5 V gate drivers, avoiding partial-enhancement risk |
| EAS | 45 mJ (single-pulse) - withstands inductive energy from 30 A current interruption with 25 Ω gate resistor |
| Die size | 5.762 × 3.0 mm² - fits standard 6 mm × 3 mm cavity layouts in power modules and hybrid substrates |
| Thickness | 220 µm - compatible with standard die-attach processes including soldering and conductive epoxy bonding |
Pinout & Package
IPC173N10N3X1SA1 is supplied as a bare die with three terminals: Drain (entire backside metallization), Gate (frontside pad), and Source (frontside pad). The die uses NiV backside metallization for drain connection and AlCu frontside metallization for gate and source interconnects. Passivation is applied only to edge structures using silicon nitride.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Backside (NiV) | Drain | Primary current-carrying terminal; thermally and electrically connected to heatsink via solder or epoxy |
| Frontside Pad A | Gate | Control electrode; requires ESD-safe handling and ≤20 V gate drive per MIL-STD-883C |
| Frontside Pad B | Source | Reference node for gate drive; forms low-inductance return path in high-frequency switching layouts |
Key Features
| Feature | Design Value |
|---|---|
| N-channel enhancement mode | Enables self-turn-off behavior and simplifies gate drive architecture vs. depletion-mode devices |
| Wafer-level characterization | Guarantees RDS(on), VGS(th), and IDSS before packaging - critical for module yield control |
| AlCu frontside / NiV backside metallization | Supports high-current density (≥100 A/mm²) and thermal cycling reliability in power modules |
| ESD-sensitive classification (MIL-STD-883C) | Mandates Class 1B handling - prevents latent gate oxide damage during assembly |
Applications
| Motor Drive Inverter Module | Industrial DC-DC Converter |
|---|---|
Use Scenario: Integrated into 600 W–2 kW servo drive half-bridge modules for HVAC compressors and CNC axes. IC Role / Device Role / Timing Role: Primary-side switching element in synchronous buck topology, operating at 50–100 kHz with forced-air cooling. Use Value: 3.6 mΩ RDS(on) reduces conduction loss by 35% vs. legacy 6.2 mΩ dies, enabling 97.2% peak efficiency at full load. | Use Scenario: Used in isolated 48 V-to-12 V telecom power supply modules for base station RF amplifiers. IC Role / Device Role / Timing Role: High-side switch in active-clamp forward converter, driven by transformer-isolated gate driver. Use Value: 45 mJ avalanche rating eliminates need for external RCD clamp, reducing BOM count by 4 components per phase. |
| Renewable Energy Inverter | EV Onboard Charger Stage |
Use Scenario: Embedded in 3.3 kW photovoltaic microinverter power stage with SiC diode co-packaging. IC Role / Device Role / Timing Role: Low-side switch in interleaved boost converter, synchronized to 100 kHz PWM carrier. Use Value: 220 µm thickness enables direct copper sintering to DBC substrate, improving thermal resistance by 0.4 K/W vs. 300 µm dies. | Use Scenario: Deployed in 6.6 kW bidirectional OBC PFC stage for Level 2 EV charging. IC Role / Device Role / Timing Role: Fast-switching switch in totem-pole PFC bridge leg, operated with zero-voltage switching. Use Value: 2.0–3.5 V VGS(th) window ensures stable turn-on across -40°C to +150°C junction temperature range without gate bias adjustment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET bare-die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP045N10N3 G | Packaged P-TO220-3 version; RDS(on) = 4.5 mΩ (min), same die technology and wafer specs | Used where discrete through-hole mounting and manual prototyping are required | Select when board-level assembly and thermal testing precede module integration |
| IPB180N10N3 G | Bare die with larger 7.2 × 3.5 mm² footprint; RDS(on) = 1.8 mΩ typ., higher current rating (180 A) | Suitable for >5 kW industrial inverters requiring lower conduction loss and higher thermal mass | Choose when system power scaling demands ≥150 A continuous current capability and space allows larger die area |
Compared with IPP045N10N3 G, IPC173N10N3X1SA1 offers identical die performance but no leadframe - enabling tighter thermal paths in modules; versus IPB180N10N3 G, it trades 50% lower RDS(on) for 30% smaller footprint and reduced gate charge, favoring high-frequency, space-constrained designs.
Availability
IPC173N10N3X1SA1 is available at Aetrix Electronics and suitable for industrial motor drives, renewable energy inverters, and EV onboard charger stages requiring stable component supply and wafer-level traceability.
Supply support for IPC173N10N3X1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.
The OptiMOS™3 product line targets high-efficiency power conversion in compact, thermally demanding applications - emphasizing low RDS(on), fast switching, and robust avalanche performance in bare-die and packaged formats.
FAQ
Is IPC173N10N3X1SA1 qualified for automotive applications?
No. This bare-die MOSFET is specified for industrial and multimarket use per its Rev. 2.5 datasheet. Infineon explicitly states that use in automotive, aviation, aerospace, or life-support systems requires express written approval - which is not granted for this part number. Automotive qualification would require AEC-Q101 stress testing and extended temperature validation not performed on this die.
What gate drive voltage is recommended for reliable operation?
A minimum gate drive of 10 V is required to achieve the specified 3.6 mΩ RDS(on); operation at 8 V yields higher on-resistance and increased conduction loss. The 2.0–3.5 V VGS(th) range ensures turn-on with 3.3 V logic-level drivers only if gate overshoot is controlled - however, 10 V is strongly recommended for full enhancement and thermal stability across temperature.
Can IPC173N10N3X1SA1 be mounted using conductive epoxy instead of solder?
Yes. The datasheet explicitly permits both soldered and glued die bond methods. Conductive epoxy is viable for low-volume prototyping or substrates incompatible with reflow soldering, provided thermal interface resistance remains ≤0.8 K·cm²/W and epoxy cure profile avoids exceeding 200°C peak temperature to preserve AlCu metallization integrity.
Does this die include integrated ESD protection diodes?
No. IPC173N10N3X1SA1 is classified as an electrostatic discharge sensitive device per MIL-STD-883C, with no on-die ESD clamps. External gate protection (e.g., 10 Ω series resistor + 12 V TVS) is mandatory during handling and PCB assembly to prevent gate oxide rupture from human-body-model discharges exceeding 2 kV.
IPC173N10N3X1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
IPC173N10N3X1SA1 FAQ
1.How can I place an order for IPC173N10N3X1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPC173N10N3X1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPC173N10N3X1SA1 reliable?
The price and inventory of IPC173N10N3X1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPC173N10N3X1SA1 is usually 5 days.
3.What payment methods are accepted for IPC173N10N3X1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPC173N10N3X1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPC173N10N3X1SA1?
IPC173N10N3X1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPC173N10N3X1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPC173N10N3X1SA1?
For technical support, including IPC173N10N3X1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPC173N10N3X1SA1 requirements.
6.How does Aetrix verify that IPC173N10N3X1SA1 is sourced from the original manufacturer or authorized distributors?
All IPC173N10N3X1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPC173N10N3X1SA1 meets industry standards.
7.What is the process for return or replacement of IPC173N10N3X1SA1?
All IPC173N10N3X1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPC173N10N3X1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPC173N10N3X1SA1 part is unused and in its original packaging.
Return procedure for IPC173N10N3X1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IPC173N10N3X1SA1 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
