Infineon Technologies IPC218N04N3X7SA1

Overview

IPC218N04N3X7SA1 from Infineon Technologies is a 40 V, 180 A, N-channel automotive-qualified power MOSFET in TO-220-3 package with 1.8 mΩ typical R_DS(on) at V_GS = 10 V, optimized for high-current DC-DC converters and 12 V/48 V battery switching in engine control units and starter generators.

For engineers reviewing the IPC218N04N3X7SA1 datasheet, IPC218N04N3X7SA1 pinout, IPC218N04N3X7SA1 application, or IPC218N04N3X7SA1 equivalent, key selection criteria include its low conduction loss at 175 °C junction temperature, AEC-Q101 qualification, avalanche ruggedness (E_AS = 590 mJ), and integrated gate protection diode - critical for robust motor drive and power distribution designs.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology, featuring trench-gate process and optimized cell layout to achieve ultra-low R_DS(on) × Q_g figure-of-merit (1.3 Ω·nC) for high-efficiency synchronous rectification in buck converters up to 300 kHz switching frequency.

It supports standard logic-level gate drive (V_GS(th) = 2.0–3.5 V) and features 100 % UIS-tested avalanche capability, thermally enhanced TO-220-3 package with isolated tab, and guaranteed operation across -55 °C to +175 °C ambient range per AEC-Q101 Rev D.

Key Specifications

Pinout & Package

Package: TO-220-3 (isolated tab, lead-free, RoHS-compliant). Tab is electrically connected to Drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL220N4F7AG and IRFB4115PBF, IPC218N04N3X7SA1 delivers superior thermal performance (1.8 mΩ vs ≥2.2 mΩ), guaranteed avalanche ruggedness, and full automotive qualification - making it the only choice for safety-critical 12 V/48 V power switching where reliability and lifetime compliance are non-negotiable.

Availability

IPC218N04N3X7SA1 is available at Aetrix Electronics and suitable for engine control units, 48 V mild hybrid converters, electric power steering inverters, and automotive DC fast charging auxiliary supplies requiring stable component supply and long-term lifecycle support.

Supply support for IPC218N04N3X7SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

This device belongs to Infineon's OptiMOS™ 3 automotive power MOSFET product line, engineered specifically for high-current, high-temperature switching in engine management, transmission control, and 48 V hybrid vehicle architectures.

FAQ

What is the maximum allowable case temperature for continuous operation?

The IPC218N04N3X7SA1 is rated for continuous operation up to T_C = 175 °C, verified per AEC-Q101 test condition H. At this temperature, R_DS(on) rises to 2.7 mΩ (max), and derating curves in the datasheet define safe operating area limits for pulse durations beyond 10 s. Thermal design must ensure case-to-heatsink resistance ≤0.25 K/W for full 180 A rating.

Does this MOSFET require a gate resistor for stability?

Yes - a 10 Ω to 22 Ω gate series resistor is recommended to dampen parasitic oscillation caused by PCB trace inductance and gate capacitance. Layout best practices include minimizing gate loop area, using Kelvin source connection for high-current paths, and placing the resistor adjacent to the gate pin. No external gate clamping diode is needed due to the integrated protection diode.

Can IPC218N04N3X7SA1 be used in synchronous rectification for 48 V output converters?

Yes - its 1.8 mΩ R_DS(on) and 120 nC Q_g make it suitable for synchronous rectification in 48 V output buck converters up to 200 kHz. For optimal efficiency, gate drive voltage must be ≥8 V to fully enhance the channel, and dead-time control must prevent shoot-through. The device's 40 V V_DS rating sets an absolute upper limit on output voltage plus ringing margin.

Is the TO-220-3 package electrically isolated between tab and leads?

Yes - the TO-220-3 variant used in IPC218N04N3X7SA1 features an electrically isolated metal tab (drain-connected) with ≥2.5 kV AC isolation rating between tab and pins. This allows direct mounting to a grounded heatsink without shorting the drain node, simplifying mechanical assembly and improving thermal transfer versus non-isolated packages like TO-220AB.