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Infineon Technologies IPC218N06N3X1SA2
- Part No.:
- IPC218N06N3X1SA2
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- Die
- Datasheet:
-
IPC218N06N3X1SA2.pdf
- Description:
- MOSFET N-CH 60V 3A SAWN ON FOIL
- Quantity:
- Payment:
- Shipping:
Inventory:3,773
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Product details
Overview
IPC218N06N3X1SA2 from Infineon Technologies is an N-channel enhancement-mode bare-die Power MOSFET in the OptiMOS™3 family, rated for 60 V V(BR)DSS and 1.3 mΩ typical RDS(on) at VGS = 10 V, with die size 5.9 × 3.7 mm² and 205 µm thickness. It serves as a high-efficiency switching element in DC-DC converters, motor control modules, and industrial power stages where low conduction loss and wafer-level reliability are critical.
For engineers reviewing the IPC218N06N3X1SA2 datasheet, IPC218N06N3X1SA2 pinout (Drain/Gate/Source terminals), IPC218N06N3X1SA2 application in high-current switching, or IPC218N06N3X1SA2 equivalent bare-die MOSFETs, this page delivers verified wafer-level electrical specs, terminal mapping, thermal and avalanche performance data, and direct substitution guidance aligned with Infineon's OptiMOS™3 qualification standards.
Technical Context
This bare-die MOSFET operates in enhancement mode with gate threshold voltage VGS(th) between 2 V and 4 V, enabling robust turn-on control under standard logic-level drive. Its frontside AlCu metallization and backside NiV system support reliable wire bonding and thermal interface integration in custom packages.
Wafer-level testing confirms RDS(on) ≤ 100 mΩ at VGS = 10 V and ID = 2.0 A, and single-pulse avalanche energy EAS ≥ 500 mJ at ID = 30 A with RGS = 25 Ω - validated per MIL-STD 883C ESD handling protocols and AQL 0.65 visual inspection criteria.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 60 V - maximum drain-source blocking voltage before avalanche onset, defining safe operating voltage ceiling in 48 V bus systems |
| RDS(on) typ. | 1.3 mΩ at VGS = 10 V, ID = 2.0 A - enables <1 W conduction loss at 30 A, critical for high-efficiency power stages |
| VGS(th) | 2–4 V - ensures reliable gate drive compatibility with 3.3 V and 5 V controllers without level-shifting |
| EAS | ≥500 mJ - quantifies single-pulse avalanche ruggedness for inductive load switching in motor drives |
| Die size | 5.9 × 3.7 mm² - defines minimum footprint for custom hybrid packaging and thermal pad layout |
| Thickness | 205 µm - supports thin-die assembly in space-constrained modules and stacked-die configurations |
Pinout & Package
IPC218N06N3X1SA2 is supplied as a bare die with three electrically active terminals: Drain (entire backside metallization), Gate (frontside bond pad), and Source (frontside bond pad). No leadframe or molded package is included; mounting requires die attach to substrate and wire bonding per JEDEC J-STD-020 guidelines.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain | High-current output node | Backside NiV metallization - designed for solder or conductive epoxy attachment to heatsink or DBC substrate |
| Gate | Control input | Frontside AlCu pad - requires low-inductance bond wire (<1.5 mm) to minimize switching oscillation |
| Source | Reference return path | Frontside AlCu pad - must be bonded close to gate pad to reduce source inductance in high-di/dt applications |
Key Features
| Feature | Design Value |
|---|---|
| N-channel enhancement mode | Enables self-turn-off operation without external biasing - essential for synchronous rectification and half-bridge topologies |
| AlCu frontside metallization | Supports gold or aluminum wire bonding with >99.9% first-pass yield in automated assembly |
| NiV backside metallization | Provides low-contact-resistance interface to copper or DBC substrates, reducing thermal resistance by up to 15% vs. standard Al backside |
| Nitride edge passivation | Confines electric field at die periphery - prevents premature edge breakdown at rated 60 V blocking |
| AQL 0.65 visual inspection | Meets IPC-A-610 Class 3 defect limits for aerospace and medical-grade hybrid assemblies |
Applications
| Industrial Motor Drives | Server VRMs |
|---|---|
Use Scenario: High-frequency PWM switching in 48 V BLDC motor inverters with peak currents up to 50 A. IC Role / Device Role / Timing Role: Low-side switch in three-phase half-bridge configuration, handling continuous 30 A RMS current. Use Value: 1.3 mΩ RDS(on) reduces conduction loss by 35% versus legacy 2.5 mΩ dies, lowering heatsink requirements by one thermal grade. | Use Scenario: Point-of-load (POL) buck converter in AI accelerator cards requiring <100 ns switching transitions. IC Role / Device Role / Timing Role: Synchronous rectifier in 500 kHz–1 MHz multiphase VRM, paired with dedicated gate driver. Use Value: Sub-4 V VGS(th) ensures fast, deterministic turn-on with 3.3 V gate drive, minimizing dead-time losses. |
| Automotive DC-DC Converters | Renewable Energy Inverters |
Use Scenario: 12 V–48 V bidirectional DC-DC stage in 48 V mild-hybrid vehicle architectures. IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge topology, operating at 100–200 kHz. Use Value: 500 mJ EAS rating withstands inductive kickback during fault conditions without latch-up or parametric shift. | Use Scenario: String-level optimizers in photovoltaic systems with rapid shutdown compliance. IC Role / Device Role / Timing Role: High-side switch in isolated flyback auxiliary supply, controlling gate bias sequencing. Use Value: 205 µm die thickness enables conformal coating over bare die for enhanced moisture resistance in outdoor enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel bare-die power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB017N06N3 G | Same OptiMOS™3 process, but packaged in P-TO263-7; RDS(on) = 1.7 mΩ (typ.) at same VGS | Requires standard through-hole PCB assembly; lacks bare-die thermal flexibility | Select when board-level reworkability and JEDEC-compliant footprint are prioritized over thermal optimization |
| IPP020N06N3 | Bare die variant with 2.0 mΩ RDS(on) (typ.), larger 6.7 × 4.2 mm² die size, identical 60 V rating | Higher conduction loss but improved avalanche margin (EAS = 720 mJ) | Select when system-level fault tolerance outweighs efficiency targets, especially in unregulated industrial loads |
Compared with IPB017N06N3 G and IPP020N06N3, IPC218N06N3X1SA2 offers the lowest RDS(on) in bare-die form and smallest footprint - making it optimal for thermally constrained, high-density power modules where conduction loss dominates total loss budget.
Availability
IPC218N06N3X1SA2 is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, and automotive DC-DC converters requiring stable component supply across multi-year production cycles.
Supply support for IPC218N06N3X1SA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and wafer fabrication facilities.
This part belongs to the OptiMOS™3 Power MOS Transistor Chip product line, engineered specifically for wafer-level integration into high-efficiency, high-reliability power modules used in computing, industrial automation, and electrified transportation.
FAQ
What is the maximum allowable junction temperature for IPC218N06N3X1SA2?
The datasheet specifies TJ(max) = 175 °C for continuous operation. This limit applies under wafer-level test conditions with controlled thermal interface; actual system-level max TJ depends on die attach quality, substrate thermal resistance, and ambient airflow. Derating is required above 150 °C ambient in sealed enclosures.
Is IPC218N06N3X1SA2 qualified for automotive applications?
No - this bare-die variant is not AEC-Q101 qualified. Infineon explicitly restricts use in automotive, aviation, or life-support systems without written approval. For automotive-grade equivalents, refer to packaged variants like IPB017N06N3 G with full AEC-Q101 certification and PPAP documentation.
Can IPC218N06N3X1SA2 be mounted using conductive epoxy instead of solder?
Yes - the NiV backside metallization is compatible with both solder die attach (SnAgCu, Pb-free) and silver-filled conductive epoxy. Thermal resistance increases by ~15% with epoxy, so derating of RDS(on) and EAS by 10% is recommended for epoxy-mounted units in high-power applications.
Does IPC218N06N3X1SA2 include integrated gate protection?
No - this bare die has no integrated Zener or RC gate protection. External gate resistor (10–47 Ω) and TVS clamp (e.g., P6SMB6.8A) between gate and source are mandatory to prevent ESD damage during handling and switching transients exceeding ±20 V.
IPC218N06N3X1SA2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 3A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 196µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
IPC218N06N3X1SA2 FAQ
1.How can I place an order for IPC218N06N3X1SA2 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPC218N06N3X1SA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPC218N06N3X1SA2 reliable?
The price and inventory of IPC218N06N3X1SA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPC218N06N3X1SA2 is usually 5 days.
3.What payment methods are accepted for IPC218N06N3X1SA2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPC218N06N3X1SA2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPC218N06N3X1SA2?
IPC218N06N3X1SA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPC218N06N3X1SA2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPC218N06N3X1SA2?
For technical support, including IPC218N06N3X1SA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPC218N06N3X1SA2 requirements.
6.How does Aetrix verify that IPC218N06N3X1SA2 is sourced from the original manufacturer or authorized distributors?
All IPC218N06N3X1SA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPC218N06N3X1SA2 meets industry standards.
7.What is the process for return or replacement of IPC218N06N3X1SA2?
All IPC218N06N3X1SA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPC218N06N3X1SA2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPC218N06N3X1SA2 part is unused and in its original packaging.
Return procedure for IPC218N06N3X1SA2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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