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Infineon Technologies IPC218N06N3X7SA1
- Part No.:
- IPC218N06N3X7SA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- Die
- Datasheet:
-
IPC218N06N3X7SA1.pdf
- Description:
- MV POWER MOS
- Quantity:
- Payment:
- Shipping:
Inventory:9,691
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Product details
Overview
IPC218N06N3X7SA1 from Infineon Technologies is an N-channel enhancement-mode bare-die Power MOSFET in the OptiMOS™3 family, designed for high-efficiency power conversion in industrial switching applications. It features 60 V V(BR)DSS, 1.3 mΩ typical RDS(on) at VGS = 10 V and ID = 2.0 A, 5.9 × 3.7 mm² die size, and NiV backside metallization - used as a primary switch in DC-DC converters and motor drive half-bridges.
For engineers reviewing the IPC218N06N3X7SA1 datasheet, IPC218N06N3X7SA1 pinout (Drain/Gate/Source terminals), IPC218N06N3X7SA1 application in high-current switching stages, or IPC218N06N3X7SA1 equivalent bare-die MOSFETs for wafer-level integration, this page delivers verified terminal mapping, wafer-level electrical specs, thermal interface constraints, and validated alternatives for die bonding and packaging design.
Technical Context
This bare-die MOSFET operates in enhancement mode with gate threshold voltage VGS(th) between 2 V and 4 V at VDS = VGS and ID = 196 µA. Its zero-gate-voltage drain leakage IDSS is limited to 3 µA at VDS = 60 V, and gate-source leakage IGSS remains ≤100 nA at VGS = 20 V.
Rated for single-pulse avalanche energy EAS of 500 mJ under ID = 30 A and RGS = 25 Ω, it is wafer-tested per MIL-STD 883C for ESD sensitivity. Passivation uses nitride only on edge structure; frontside metallization is AlCu, backside is NiV.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 60 V - maximum blocking voltage before avalanche onset at ID = 1 mA |
| RDS(on) | 1.3 mΩ typ. - conduction loss baseline at VGS = 10 V, ID = 2.0 A, wafer-level test |
| VGS(th) | 2–4 V - gate voltage range enabling turn-on with defined transconductance slope |
| IDSS | ≤3 µA - off-state leakage limiting standby power in high-side configurations |
| EAS | 500 mJ - single-pulse avalanche robustness supporting inductive load switching |
| Die size | 5.9 × 3.7 mm² - physical footprint dictating thermal pad area and wire-bond layout |
| Thickness | 205 µm - mechanical constraint for die attach pressure and warpage control |
Pinout & Package
IPC218N06N3X7SA1 is supplied as a bare die without leadframe or molded package. Terminal configuration follows standard Power MOSFET topology: Drain (entire backside metallization), Gate (frontside bond pad), Source (frontside bond pad). Die thickness is 205 µm; backside metallization is NiV; frontside is AlCu with nitride edge passivation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain | High-current output node | Backside NiV layer - requires solder or conductive epoxy attachment to heatsink or DBC substrate |
| Gate | Control input | Frontside AlCu pad - must be wire-bonded with <15 µm gold or aluminum wire; sensitive to ESD |
| Source | Reference return path | Frontside AlCu pad - bonded separately to minimize source inductance in high-di/dt switching |
Key Features
| Feature | Design Value |
|---|---|
| N-channel enhancement mode | Enables active switching control without external bias; compatible with standard gate drivers |
| Wafer-level RDS(on) = 1.3 mΩ | Reduces conduction loss in high-current DC-DC phases where die-level optimization is critical |
| NiV backside metallization | Supports reliable solder die attach and thermal cycling endurance up to 1000 cycles |
| AlCu frontside metallization | Enables robust wire bonding with low intermetallic growth rate under thermal stress |
| MIL-STD 883C ESD classification | Requires Class 1B handling protocols - limits static discharge risk during assembly |
Applications
| Industrial DC-DC Converter | Automotive HVAC Blower Driver |
|---|---|
Use Scenario: High-efficiency 48 V–12 V buck converter in factory automation PLC power supplies. IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier switch operating at 200–500 kHz. Use Value: 1.3 mΩ RDS(on) minimizes I²R loss at 30 A continuous current, improving system efficiency by ≥1.2% over comparable 2.2 mΩ dies. | Use Scenario: PWM-controlled blower motor driver in passenger cabin HVAC systems. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration driving brushed DC motor. Use Value: 500 mJ EAS rating withstands inductive kickback during rapid PWM turn-off without snubber circuitry. |
| Solar Microinverter Half-Bridge | Server VRM High-Current Phase |
Use Scenario: AC-coupled microinverter stage converting 40–60 V PV string output to 230 VAC. IC Role / Device Role / Timing Role: Low-side switch in interleaved half-bridge with SiC diode clamp. Use Value: 5.9 × 3.7 mm² die size enables compact thermal interface design on ceramic DBC substrates with <0.4°C/W junction-to-case resistance. | Use Scenario: 30 A+ CPU core power delivery using multiphase buck topology. IC Role / Device Role / Timing Role: Synchronous rectifier in 600 kHz phase-leg with integrated driver feedback loop. Use Value: 2–4 V VGS(th) ensures clean turn-on margin with 5 V gate drive, reducing shoot-through risk in tight-timing layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel bare-die power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB017N06N3 G | Same OptiMOS™3 process, but packaged in P-TO263-7; RDS(on) = 1.7 mΩ (packaged) | Requires PCB footprint and thermal via design; not suitable for direct die bonding | Select when board-level assembly and reflow compatibility are prioritized over thermal density |
| IPP60R099C7 | 600 V CoolMOS™ C7, RDS(on) = 99 mΩ - higher voltage, lower current density, different technology node | Targeted at offline SMPS, not 60 V industrial DC-DC; incompatible die geometry and metallization | Select only if system requires >400 V blocking and can accept 75× higher RDS(on) |
Compared with IPB017N06N3 G, IPC218N06N3X7SA1 offers lower RDS(on) and direct thermal path but demands custom die attach; versus IPP60R099C7, it delivers 76× lower on-resistance at 60 V but lacks high-voltage ruggedness - choice hinges on voltage class, thermal architecture, and assembly capability.
Availability
IPC218N06N3X7SA1 is available at Aetrix Electronics and suitable for industrial DC-DC converters, automotive HVAC motor drives, and solar microinverter half-bridges requiring stable component supply and wafer-level performance consistency.
Supply support for IPC218N06N3X7SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and fabrication facilities.
The OptiMOS™3 product line targets high-efficiency, high-current power switching in industrial, server, and renewable energy systems - optimized for low RDS(on), fast switching, and robust avalanche performance at 25–100 V.
FAQ
Is IPC218N06N3X7SA1 supplied with solder bumps or gold stud bumps?
No. IPC218N06N3X7SA1 is delivered as a bare die with planar AlCu frontside metallization and NiV backside - no pre-applied bumps. Customers must implement wire bonding (Au/Al) or solder die attach per their assembly process.
What is the maximum allowable die attach temperature for IPC218N06N3X7SA1?
The die supports peak reflow temperatures up to 260 °C for ≤30 seconds when using Pb-free solder (SAC305), consistent with JEDEC J-STD-020. Thermal shock testing confirms reliability up to 1000 cycles between −40 °C and +125 °C.
Can IPC218N06N3X7SA1 be used in parallel configurations?
Yes - its positive temperature coefficient of RDS(on) enables inherent current sharing. Designers must match die placement symmetry, bond wire length, and thermal interface resistance to within ±5% across paralleled units to avoid imbalance above 20 A per die.
Does IPC218N06N3X7SA1 include integrated gate protection diodes?
No. This bare-die MOSFET has no on-chip gate protection. External Zener clamping (e.g., 15 V TVS between gate and source) is required to limit VGS to ≤20 V during transient events, per datasheet absolute maximum ratings.
IPC218N06N3X7SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™ 3
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 196µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
IPC218N06N3X7SA1 FAQ
1.How can I place an order for IPC218N06N3X7SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPC218N06N3X7SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPC218N06N3X7SA1 reliable?
The price and inventory of IPC218N06N3X7SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPC218N06N3X7SA1 is usually 5 days.
3.What payment methods are accepted for IPC218N06N3X7SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPC218N06N3X7SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPC218N06N3X7SA1?
IPC218N06N3X7SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPC218N06N3X7SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPC218N06N3X7SA1?
For technical support, including IPC218N06N3X7SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPC218N06N3X7SA1 requirements.
6.How does Aetrix verify that IPC218N06N3X7SA1 is sourced from the original manufacturer or authorized distributors?
All IPC218N06N3X7SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPC218N06N3X7SA1 meets industry standards.
7.What is the process for return or replacement of IPC218N06N3X7SA1?
All IPC218N06N3X7SA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPC218N06N3X7SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPC218N06N3X7SA1 part is unused and in its original packaging.
Return procedure for IPC218N06N3X7SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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