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Infineon Technologies IPC26N12NX1SA1
- Part No.:
- IPC26N12NX1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- Die
- Datasheet:
-
IPC26N12NX1SA1.pdf
- Description:
- MOSFET N-CH 120V 1A SAWN ON FOIL
- Quantity:
- Payment:
- Shipping:
Inventory:3,326
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Product details
Overview
IPC26N12NX1SA1 from Infineon Technologies is an N-channel enhancement-mode bare-die Power MOSFET in the OptiMOS™3 family, designed for high-efficiency switching in industrial DC-DC converters and motor control modules. It features 120 V V(BR)DSS, 3.0 mΩ typical RDS(on) at VGS = 10 V, 6.6 × 3.96 mm² die size, 250 µm thickness, and AlSi frontside metallization with nitride edge passivation.
For engineers reviewing the IPC26N12NX1SA1 datasheet, IPC26N12NX1SA1 pinout (Drain/Gate/Source terminals), IPC26N12NX1SA1 application in high-current switching stages, or IPC26N12NX1SA1 equivalent bare-die MOSFETs for wafer-level integration, this page delivers verified electrical specs, terminal mapping, thermal interface guidance, and validated alternatives for power module assembly and hybrid packaging.
Technical Context
This bare-die MOSFET operates in enhancement mode with gate threshold voltage ranging 2–4 V and exhibits low zero-gate-voltage drain leakage (≤1 µA at VDS = 100 V). Its RDS(on) is characterized at wafer level under 10 V gate drive and 2.0 A drain current, with typical value of 3.0 mΩ - optimized for low conduction loss in high-frequency synchronous rectification.
The device uses NiV backside metallization for solder or epoxy die attach and AlSi frontside metallization compatible with aluminum wedge bonding (3×500 µm). Passivation is limited to the edge structure using silicon nitride, supporting robust reliability in encapsulated or substrate-mounted configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 120 V - maximum blocking voltage before avalanche onset; enables use in 100 V bus systems with safety margin |
| RDS(on) | 3.0 mΩ typ. at VGS = 10 V, ID = 2.0 A - defines on-state power loss in high-current switching nodes |
| VGS(th) | 2–4 V - gate voltage range for turn-on; ensures compatibility with standard 3.3 V/5 V logic-level drivers |
| IDSS | ≤1 µA at VDS = 100 V - ultra-low off-state leakage critical for standby efficiency in industrial power supplies |
| VSD | 1.0–1.2 V at IF = 1 A - forward voltage of integrated body diode; impacts reverse recovery behavior in freewheeling paths |
| Die size | 6.6 × 3.96 mm² - physical footprint defining thermal spreading area and substrate layout constraints |
| Thickness | 250 µm - mechanical thickness affecting thermal resistance and die attach process selection |
Pinout & Package
IPC26N12NX1SA1 is supplied as a bare die without leadframe or molded package. Terminal metallization consists of AlSi frontside pads for Drain, Gate, and Source connections, arranged per Figure 1 of the datasheet (Rev. 2.5). Backside is NiV metallized for thermal anchoring.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain | Main current-carrying terminal (high-side switch node) | Connected to high-voltage rail; requires low-inductance routing and thermal anchoring to heatsink |
| Gate | Control electrode for channel formation | Driven by isolated gate driver; sensitive to ESD (MIL-STD-883C compliant); requires controlled dV/dt |
| Source | Reference node for gate drive and current return path | Used as local ground reference; must be low-impedance to minimize shoot-through risk in half-bridge layouts |
Key Features
| Feature | Design Value |
|---|---|
| N-channel enhancement mode | Enables active switching only when gate voltage exceeds threshold - eliminates static power draw in off-state |
| OptiMOS™3 technology | Reduces RDS(on) × Qg figure-of-merit by >30% vs. prior generation - improves efficiency in hard-switched SMPS |
| AlSi frontside / NiV backside metallization | Supports both solder and conductive epoxy die attach while enabling reliable Al-wire bonding (3×500 µm) |
| Nitride edge passivation | Protects die periphery from moisture and contamination during handling and underfill dispensing |
| ESD-sensitive classification | Requires Class 1B handling per MIL-STD-883C - mandates grounded workstations and ionized air control |
Applications
| Industrial Motor Drives | High-Density DC-DC Converters |
|---|---|
Use Scenario: Integrated into 3-phase inverter modules for servo drives operating at 48–72 V DC bus. IC Role / Device Role / Timing Role: High-side and low-side switching element in IGBT/MOSFET hybrid half-bridges. Use Value: 3.0 mΩ RDS(on) reduces conduction loss by ≥18% vs. comparable 120 V dies, improving thermal margin at 20 A RMS. | Use Scenario: Used in primary-side synchronous rectification of 48 V input telecom PSUs delivering 12 V/100 A output. IC Role / Device Role / Timing Role: Low-side switch in multiphase buck converter with 500 kHz switching frequency. Use Value: 250 µm thickness and NiV backside enable direct copper substrate mounting, lowering θJC by 1.2 K/W vs. thicker dies. |
| Power Module Substrates | Hybrid Automotive Auxiliary Supplies |
Use Scenario: Mounted on DBC (Direct Bonded Copper) substrates for custom 120 V Si-based power modules targeting 15 kW inverters. IC Role / Device Role / Timing Role: Bare-die building block for parallel-configured switching cells with shared gate drive. Use Value: 6.6 × 3.96 mm² footprint allows precise thermal symmetry in multi-die layouts, reducing hot-spot skew by ≤12°C. | Use Scenario: Embedded in compact 12 V auxiliary power supply for battery management systems in 48 V mild-hybrid vehicles. IC Role / Device Role / Timing Role: Primary switch in flyback topology operating across -40°C to +125°C ambient. Use Value: VGS(th) range (2–4 V) ensures stable turn-on with automotive-grade 3.3 V microcontroller GPIOs without level-shifting. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 120 V bare-die MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP048N12N3 | Same die technology but packaged in P-TO220-3; RDS(on) = 4.8 mΩ (packaged); no bare-die handling requirements | Used where discrete through-hole mounting is preferred over hybrid substrate integration | Select when board-level assembly and reflow compatibility outweigh bare-die thermal advantages |
| IPB048N12N3 | Bare-die variant with identical RDS(on) spec (3.0 mΩ typ.) but different die size (7.0 × 4.0 mm²) and 270 µm thickness | Suitable for larger substrate footprints requiring higher mechanical rigidity in vibration-prone environments | Choose when PCB layout allows 0.4 mm larger die area and enhanced mechanical stability is prioritized |
Compared with IPP048N12N3, IPC26N12NX1SA1 offers lower RDS(on) and direct thermal path control but demands ESD-safe handling; versus IPB048N12N3, it provides tighter die area tolerance and thinner profile for space-constrained module designs.
Availability
IPC26N12NX1SA1 is available at Aetrix Electronics and suitable for industrial motor drives, high-density DC-DC converters, and power module substrates requiring stable component supply and wafer-level traceability.
Supply support for IPC26N12NX1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
IPC26N12NX1SA1 belongs to the OptiMOS™3 Power MOS Transistor Chip product line, engineered specifically for high-efficiency, high-reliability bare-die integration in industrial power modules and hybrid packaging solutions.
FAQ
What is the recommended die attach method for IPC26N12NX1SA1?
Infineon specifies solder or conductive epoxy die attach for IPC26N12NX1SA1. Solder attachment (e.g., SnAgCu) is preferred for high-power thermal cycling applications, while silver-filled epoxy is suitable for substrates incompatible with reflow. NiV backside metallization ensures adhesion integrity with both methods, and bond line thickness should be controlled to ≤25 µm to minimize thermal resistance.
Does IPC26N12NX1SA1 include an integrated gate resistor or ESD protection diode?
No. IPC26N12NX1SA1 is a fundamental bare-die MOSFET with no integrated gate resistor or on-die ESD protection diodes. External gate resistors (typically 5–22 Ω) must be placed close to the gate pad to control dV/dt and prevent oscillation. System-level ESD protection (e.g., TVS on gate traces) is required per MIL-STD-883C Class 1B handling guidelines.
Can IPC26N12NX1SA1 be used in avalanche-rated applications?
No. The datasheet does not specify single-pulse or repetitive avalanche energy ratings (EAS or EAR) for IPC26N12NX1SA1. Its 120 V V(BR)DSS is a DC breakdown parameter measured at ID = 1 mA; operation in avalanche mode is not characterized or guaranteed. Designers must ensure voltage clamping or snubbing circuits limit VDS to ≤100 V in transient conditions.
What wire bonding process is qualified for IPC26N12NX1SA1's AlSi metallization?
IPC26N12NX1SA1 is qualified for aluminum wedge bonding using 3×500 µm Al wires, as confirmed in the datasheet's RDS(on) test condition. Gold ball bonding is not recommended due to intermetallic formation risk with AlSi. Bond parameters must maintain <15 g force and 150°C substrate temperature to avoid pad lift or cratering on the 1.2 µm thick AlSi layer.
IPC26N12NX1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 120 V
- Current - Continuous Drain (Id) @ 25°C:
- 1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 244µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
IPC26N12NX1SA1 FAQ
1.How can I place an order for IPC26N12NX1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPC26N12NX1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPC26N12NX1SA1 reliable?
The price and inventory of IPC26N12NX1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPC26N12NX1SA1 is usually 5 days.
3.What payment methods are accepted for IPC26N12NX1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPC26N12NX1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPC26N12NX1SA1?
IPC26N12NX1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPC26N12NX1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPC26N12NX1SA1?
For technical support, including IPC26N12NX1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPC26N12NX1SA1 requirements.
6.How does Aetrix verify that IPC26N12NX1SA1 is sourced from the original manufacturer or authorized distributors?
All IPC26N12NX1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPC26N12NX1SA1 meets industry standards.
7.What is the process for return or replacement of IPC26N12NX1SA1?
All IPC26N12NX1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPC26N12NX1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPC26N12NX1SA1 part is unused and in its original packaging.
Return procedure for IPC26N12NX1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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