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Infineon Technologies IPC300N15N3RX1SA2
- Part No.:
- IPC300N15N3RX1SA2
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- Die
- Datasheet:
-
IPC300N15N3RX1SA2.pdf
- Description:
- MOSFET N-CH 150V 1A SAWN ON FOIL
- Quantity:
- Payment:
- Shipping:
Inventory:8,686
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Product details
Overview
IPC300N15N3RX1SA2 from Infineon Technologies is an N-channel enhancement-mode bare-die Power MOSFET in the OptiMOS™3 family, designed for high-efficiency power conversion in industrial switching applications. It features 150 V V(BR)DSS, 4.9 mΩ typical RDS(on) at VGS = 10 V and ID = 2.0 A, 6 × 5 mm² die size, 250 µm thickness, and AlCu frontside metallization with NiV backside.
For engineers reviewing the IPC300N15N3RX1SA2 datasheet, IPC300N15N3RX1SA2 pinout (Drain/Gate/Source terminals), IPC300N15N3RX1SA2 application in high-current DC-DC converters or motor drive half-bridges, or IPC300N15N3RX1SA2 equivalent bare-die MOSFETs for wafer-level integration, this page delivers verified wafer-level electrical specs, terminal mapping, thermal-mechanical interface data, and substitution guidance aligned with Infineon's OptiMOS™3 qualification standards.
Technical Context
This bare-die MOSFET operates in enhancement mode with gate threshold voltage VGS(th) ranging 2–4 V and exhibits low on-resistance due to optimized trench-cell structure and thin-oxide gate design. Its internal gate resistance RG is 2.3 Ω, and it includes a 13.6–20.4 Ω added gate resistor (RGadd) for controlled switching dynamics.
Wafer-level characterization confirms avalanche energy EAS of 45 mJ under ID = 30 A and RGS = 25 Ω, with zero-gate-voltage drain current IDSS limited to 1 µA at VDS = 120 V. Passivation uses nitride only on edge structures, supporting reliable wire-bonding and die-attach in custom packages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 150 V - Maximum drain-source blocking voltage before avalanche onset; defines system voltage rating ceiling |
| RDS(on) | 4.9 mΩ (typ.) at VGS = 10 V, ID = 2.0 A - Directly determines conduction loss in high-current power stages |
| VGS(th) | 2–4 V - Gate turn-on threshold range; enables compatibility with 3.3 V and 5 V logic-level drivers |
| IDSS | ≤1 µA at VDS = 120 V - Confirms minimal leakage under high off-state bias, critical for standby efficiency |
| EAS | 45 mJ - Single-pulse avalanche energy capability; supports robustness against inductive switching transients |
| DIE SIZE | 6 × 5 mm² - Physical footprint constrains thermal pad area and wire-bond layout in custom module assembly |
| THICKNESS | 250 µm - Enables thin-profile stacking or flip-chip integration while maintaining mechanical yield |
Pinout & Package
IPC300N15N3RX1SA2 is supplied as a bare die without leadframe or molded package. Terminal metallization consists of AlCu frontside (for wire bonding) and NiV backside (for solder or epoxy die attach). Die dimensions are 6 mm × 5 mm × 0.25 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain | Main current-carrying terminal (bulk silicon substrate) | Connected to high-side or low-side power rail; requires low-inductance backside thermal path |
| Gate | Control electrode for channel formation | AlCu bond pad; must be driven with controlled dV/dt to limit ringing and EMI in hard-switching topologies |
| Source | Reference node for gate drive and current return path | Frontside AlCu pad; forms low-impedance Kelvin sense path when used with 4-pin configurations |
Key Features
| Feature | Design Value |
|---|---|
| N-channel enhancement mode | Enables standard high-side or low-side switch configuration without external bias circuitry |
| OptiMOS™3 trench technology | Delivers 4.9 mΩ RDS(on) at 10 V gate drive, reducing conduction loss vs. planar predecessors |
| Wafer-level EAS validation | 45 mJ single-pulse avalanche rating supports reliable operation in inductive load switching |
| ESD-sensitive handling (MIL-STD-883C) | Requires grounded workstations and ionized air during die placement to prevent gate oxide damage |
| AlCu/NiV metallization stack | Ensures robust wire bondability and thermal-mechanical stability during reflow or power cycling |
Applications
| Industrial Motor Drive Inverter | High-Density Telecom DC-DC Converter |
|---|---|
Use Scenario: Half-bridge leg in 48 V input BLDC motor controller for HVAC blowers. IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off to minimize shoot-through risk and enable 100 kHz PWM. Use Value: 4.9 mΩ RDS(on) reduces I²R loss by >25% vs. legacy 7.5 mΩ die, improving full-load efficiency to >97.2%. | Use Scenario: Primary-side synchronous rectifier in 48 V → 12 V isolated LLC resonant converter. IC Role / Device Role / Timing Role: High-current, low-VDS(on) switch operating in ZVS region with tight gate timing control. Use Value: 250 µm thickness and 6 × 5 mm² footprint allow direct integration into copper-clad ceramic substrates for <0.4°C/W junction-to-board thermal resistance. |
| Custom Automotive Onboard Charger Module | Renewable Energy Solar Microinverter |
Use Scenario: DC-link switching stage in bidirectional OBC for PHEV battery charging. IC Role / Device Role / Timing Role: Bare-die mounted on DBC substrate with integrated temperature sensing for real-time derating. Use Value: Wafer-level VGS(th) 2–4 V ensures stable turn-on across -40°C to +150°C ambient, eliminating gate driver boost requirements. | Use Scenario: Full-bridge output stage in 250 W microinverter converting PV panel DC to 230 V AC. IC Role / Device Role / Timing Role: High-reliability, low-RDS(on) switch rated for 150 V bus with 1 µA IDSS enabling >10-year field life. Use Value: Nitride edge passivation prevents moisture-induced degradation in outdoor-rated encapsulation systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel bare-die power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP075N15N3 G | Same die, but packaged in P-TO220-3-1; includes external RG and full package thermal data | Used in prototyping and lower-volume designs where discrete TO-220 mounting suffices | Select when wafer-level integration is unnecessary and standard through-hole assembly is preferred |
| IPB075N15N3 G | Bare die variant with identical RDS(on) and V(BR)DSS, but different wafer test conditions and AQL visual inspection criteria | Qualified for higher-volume automotive-grade production with tighter process controls | Select for ASIL-B compliant systems requiring extended traceability and lot-level EAS retest reports |
Compared with IPP075N15N3 G, IPC300N15N3RX1SA2 offers direct die-level thermal and electrical access for custom module optimization, while IPB075N15N3 G provides enhanced automotive qualification rigor-making IPC300N15N3RX1SA2 optimal for industrial power density targets and IPB075N15N3 G preferable for safety-critical vehicle integration.
Availability
IPC300N15N3RX1SA2 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and renewable energy microinverters requiring stable component supply, wafer-level integration flexibility, and long-term lifecycle support.
Supply support for IPC300N15N3RX1SA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and fabrication facilities.
The OptiMOS™3 product line delivers high-performance, low-RDS(on) N-channel MOSFETs optimized for industrial switching, server power supplies, and motor control-prioritizing wafer-level efficiency, ruggedness, and thermal scalability.
FAQ
Is IPC300N15N3RX1SA2 qualified for automotive applications?
No-IPC300N15N3RX1SA2 is qualified for industrial and multimarket use per its Rev. 2.6 datasheet. For automotive-grade equivalents, Infineon specifies IPB075N15N3 G with AEC-Q101 stress testing and extended temperature validation across -55°C to +175°C junction range.
What is the recommended die attach method for IPC300N15N3RX1SA2?
Infineon specifies solder or conductive epoxy die attach. Solder (e.g., SnAgCu) is preferred for high-power, thermally cycled applications due to superior thermal conductivity (~60 W/mK); conductive epoxy suits low-stress, low-volume assembly where reworkability is required.
Does IPC300N15N3RX1SA2 include integrated gate protection diodes?
No-this bare-die MOSFET has no integrated gate protection. External TVS or RC snubbers must be implemented at the gate terminal to suppress ESD events and dV/dt-induced Miller turn-on, especially given its MIL-STD-883C ESD sensitivity classification.
Can IPC300N15N3RX1SA2 be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) enables inherent current sharing. Successful parallel operation requires matched gate drive loop inductance (<10 nH), symmetrical source inductance, and thermal coupling via shared heatsink or direct copper baseplate mounting to maintain ΔTj < 5°C between dies.
IPC300N15N3RX1SA2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
IPC300N15N3RX1SA2 FAQ
1.How can I place an order for IPC300N15N3RX1SA2 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPC300N15N3RX1SA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPC300N15N3RX1SA2 reliable?
The price and inventory of IPC300N15N3RX1SA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPC300N15N3RX1SA2 is usually 5 days.
3.What payment methods are accepted for IPC300N15N3RX1SA2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPC300N15N3RX1SA2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPC300N15N3RX1SA2?
IPC300N15N3RX1SA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPC300N15N3RX1SA2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPC300N15N3RX1SA2?
For technical support, including IPC300N15N3RX1SA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPC300N15N3RX1SA2 requirements.
6.How does Aetrix verify that IPC300N15N3RX1SA2 is sourced from the original manufacturer or authorized distributors?
All IPC300N15N3RX1SA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPC300N15N3RX1SA2 meets industry standards.
7.What is the process for return or replacement of IPC300N15N3RX1SA2?
All IPC300N15N3RX1SA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPC300N15N3RX1SA2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPC300N15N3RX1SA2 part is unused and in its original packaging.
Return procedure for IPC300N15N3RX1SA2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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