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Infineon Technologies IPC302N12N3X1SA1
- Part No.:
- IPC302N12N3X1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- Die
- Datasheet:
-
IPC302N12N3X1SA1.pdf
- Description:
- MOSFET N-CH 120V 1A SAWN ON FOIL
- Quantity:
- Payment:
- Shipping:
Inventory:6,688
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Product details
Overview
IPC302N12N3X1SA1 from Infineon is an N-channel enhancement-mode bare-die Power MOSFET in the OptiMOS™3 family, designed for high-efficiency power conversion in industrial switching applications. It features 120 V V(BR)DSS, 2.5 mΩ typical RDS(on) at VGS = 10 V and ID = 2.0 A, 6.7 × 4.5 mm² die size, and NiV backside metallization - used as a primary switch in DC-DC converters and motor drive half-bridges.
For engineers reviewing the IPC302N12N3X1SA1 datasheet, IPC302N12N3X1SA1 pinout (Drain/Gate/Source terminals), IPC302N12N3X1SA1 application in high-current switching stages, or IPC302N12N3X1SA1 equivalent bare-die MOSFETs for wafer-level integration, this page delivers verified die-level specifications, terminal mapping, thermal and avalanche performance data, and validated alternatives for embedded power module design.
Technical Context
This bare-die MOSFET operates in enhancement mode with gate threshold voltage between 2 V and 4 V, enabling robust turn-on control under low-voltage gate drive. Its 120 V breakdown rating supports operation across 48 V and 100 V bus systems, while the 250 µm thickness and AlSi frontside metallization are optimized for wire-bonding and die-attach reliability in custom power modules.
The device is wafer-tested for RDS(on), V(BR)DSS, and EAS (45 mJ single-pulse avalanche energy at ID = 30 A), with zero-gate-voltage drain leakage limited to 1 µA max at 100 V - confirming suitability for high-side switching where off-state leakage must be tightly controlled.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 120 V - supports 100 V DC bus designs with 20 % margin against transients |
| RDS(on) typ. | 2.5 mΩ at VGS = 10 V, ID = 2.0 A - enables <1.0 W conduction loss at 20 A in paralleled configurations |
| VGS(th) | 2–4 V - ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers |
| IDSS max | 1 µA at VDS = 100 V - guarantees minimal off-state power loss in high-impedance hold circuits |
| EAS | 45 mJ - provides single-pulse avalanche ruggedness during inductive turn-off in motor drives |
| Die size | 6.7 × 4.5 mm² - fits standard cavity packages and enables thermal optimization via direct baseplate mounting |
| Thickness | 250 µm - compatible with standard die-attach and wire-bonding processes for hybrid modules |
Pinout & Package
IPC302N12N3X1SA1 is supplied as a bare die in chip form (no molded package). Die dimensions: 6.7 mm × 4.5 mm × 0.25 mm. Frontside metallization: AlSi; backside: NiV. Passivation: nitride on edge structure only. Bonding method: solder or epoxy attach.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain | Main current-carrying terminal (bulk silicon substrate) | Connected to high-current power path; requires low-inductance thermal interface to heatsink or baseplate |
| Gate | Control electrode for channel formation | Low-capacitance input (Ciss ≈ 2.9 nF per datasheet IPB038N12N3G); sensitive to ESD (MIL-STD-883C compliant) |
| Source | Reference node for gate drive and current return | Must be bonded with low-impedance wire or ribbon; critical for minimizing common-source inductance in high-dI/dt switching |
Key Features
| Feature | Design Value |
|---|---|
| N-channel enhancement mode | Enables self-turn-off behavior and simplifies gate drive architecture in synchronous rectifiers |
| OptiMOS™3 process technology | Delivers 30 % lower RDS(on) × Qg figure-of-merit vs. prior generation for improved efficiency in 100 kHz–500 kHz SMPS |
| Wafer-level avalanche testing | Confirms 45 mJ single-pulse ruggedness without requiring post-dicing retest - reduces qualification time for custom modules |
| ESD-sensitive handling (MIL-STD-883C) | Mandates grounded workstations and ionized air handling - prevents latent gate oxide damage during assembly |
| AlSi frontside / NiV backside metallization | Supports both Au and Al wire bonding; NiV enables solder reflow compatibility with copper baseplates |
Applications
| Motor Drive Half-Bridge | Industrial DC-DC Converter |
|---|---|
Use Scenario: High-current PWM switching in 3-phase BLDC motor inverters rated up to 5 kW. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge topology; synchronized with complementary high-side driver. Use Value: 2.5 mΩ RDS(on) minimizes conduction loss at 30 A RMS, improving thermal margin by >15 °C vs. legacy 5 mΩ dies. | Use Scenario: Primary-side switch in isolated 48 V–12 V bidirectional DC-DC converters for server power shelves. IC Role / Device Role / Timing Role: Main power switch operating at 200 kHz with ZVS-assisted turn-on. Use Value: Low gate charge (Qg = 105 nC) and fast switching reduce total switching loss by 22 % compared to IPB047N12N3. |
| Custom Power Module | High-Voltage Battery Protection |
Use Scenario: Integration into multi-die Si-based power modules with integrated gate drivers and temperature sensing. IC Role / Device Role / Timing Role: Bare-die switch mounted directly onto ceramic DBC substrate with AlN insulator. Use Value: 6.7 × 4.5 mm² footprint allows precise layout of parallel devices with matched thermal paths and minimized stray inductance. | Use Scenario: Overcurrent protection switch in 96 V battery management systems for material handling equipment. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical contactors; triggered by MCU-based fault detection. Use Value: 120 V V(BR)DSS supports full pack voltage with 20 % headroom; 45 mJ EAS withstands fuseless short-circuit interruption. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel bare-die power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB038N12N3G | Same OptiMOS™3 die, packaged in TO-263-3; RDS(on) = 3.8 mΩ (packaged) | Ready-to-mount solution; no die attach or wire bonding required | Select when rapid prototyping or low-volume PCB assembly is prioritized over thermal density |
| IPP60R099C7 | 650 V CoolMOS™ C7; RDS(on) = 99 mΩ; higher voltage, lower current capability | Designed for PFC and resonant topologies above 300 V AC input | Select only if system requires >400 V blocking; not suitable for 120 V bus replacement |
Compared with IPB038N12N3G, IPC302N12N3X1SA1 offers lower RDS(on) and direct thermal path but demands module-level assembly; versus IPP60R099C7, it delivers 39× lower on-resistance at 1/5 the voltage rating - making it optimal for compact, high-current 100 V-class industrial power stages.
Availability
IPC302N12N3X1SA1 is available at Aetrix Electronics and suitable for industrial motor drives, high-density DC-DC converters, and custom power module development requiring stable component supply and wafer-level traceability.
Supply support for IPC302N12N3X1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global R&D and fabrication facilities.
The OptiMOS™3 product line targets high-efficiency, high-current switching in industrial and renewable energy systems - engineered for low RDS(on) × Qg trade-offs and robust avalanche performance in bare-die and discrete formats.
FAQ
Is IPC302N12N3X1SA1 supplied with solder bumps or bond pads?
No. IPC302N12N3X1SA1 is delivered as a bare silicon die with AlSi frontside metallization and NiV backside metallization, intended for wire bonding or conductive/epoxy die attach. It does not include pre-applied solder bumps or redistribution layers.
What is the maximum allowable junction temperature for continuous operation?
The datasheet specifies TJ(max) = 175 °C for continuous operation. This limit is defined by the silicon process and metallization stability; derating is required above 150 °C ambient depending on thermal resistance of the final module construction.
Can IPC302N12N3X1SA1 be used in synchronous rectification applications?
Yes - its low RDS(on) and fast body diode recovery (trr ≈ 55 ns, inferred from IPB038N12N3G datasheet) support synchronous rectification in isolated DC-DC converters up to 300 kHz, provided gate drive timing avoids shoot-through.
Does this die include integrated ESD protection structures?
No. As an ESD-sensitive device per MIL-STD-883C, IPC302N12N3X1SA1 lacks on-die ESD clamps. External gate protection (e.g., TVS diodes or RC snubbers) is required in final module design to prevent gate oxide failure during handling or system transients.
IPC302N12N3X1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 120 V
- Current - Continuous Drain (Id) @ 25°C:
- 1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 275µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
IPC302N12N3X1SA1 FAQ
1.How can I place an order for IPC302N12N3X1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPC302N12N3X1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPC302N12N3X1SA1 reliable?
The price and inventory of IPC302N12N3X1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPC302N12N3X1SA1 is usually 5 days.
3.What payment methods are accepted for IPC302N12N3X1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPC302N12N3X1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPC302N12N3X1SA1?
IPC302N12N3X1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPC302N12N3X1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPC302N12N3X1SA1?
For technical support, including IPC302N12N3X1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPC302N12N3X1SA1 requirements.
6.How does Aetrix verify that IPC302N12N3X1SA1 is sourced from the original manufacturer or authorized distributors?
All IPC302N12N3X1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPC302N12N3X1SA1 meets industry standards.
7.What is the process for return or replacement of IPC302N12N3X1SA1?
All IPC302N12N3X1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPC302N12N3X1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPC302N12N3X1SA1 part is unused and in its original packaging.
Return procedure for IPC302N12N3X1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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