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Infineon Technologies IPC302N15N3X1SA1
- Part No.:
- IPC302N15N3X1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- Die
- Datasheet:
-
IPC302N15N3X1SA1.pdf
- Description:
- MOSFET N-CH 150V 1A SAWN ON FOIL
- Quantity:
- Payment:
- Shipping:
Inventory:3,192
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Product details
Overview
IPC302N15N3X1SA1 from Infineon Technologies is an N-channel enhancement-mode bare-die Power MOSFET in the OptiMOS™3 family, designed for high-efficiency power conversion in industrial switching applications. It features 150 V V(BR)DSS, 4.9 mΩ typical RDS(on) at VGS = 10 V and ID = 2.0 A, 6.7 × 4.5 mm² die size, 250 µm thickness, and AlCu frontside/NiV backside metallization.
For engineers reviewing the IPC302N15N3X1SA1 datasheet, IPC302N15N3X1SA1 pinout (Drain/Gate/Source terminals), IPC302N15N3X1SA1 application in high-current DC-DC converters or motor drives, or IPC302N15N3X1SA1 equivalent bare-die MOSFETs with comparable RDS(on) and avalanche rating, this page delivers verified wafer-level electrical specs, terminal mapping, and integration guidance for die attach and packaging.
Technical Context
This bare-die MOSFET operates in enhancement mode with gate threshold voltage between 2 V and 4 V, enabling robust turn-on control under industrial bias conditions. Its 150 V breakdown voltage supports operation in 100 V-class bus systems, while the 45 mJ single-pulse avalanche energy rating (ID = 30 A, RGS = 25 Ω) indicates validated ruggedness for inductive load switching.
The device is characterized at wafer level per MIL-STD 883C ESD classification, with nitride passivation limited to edge structure only. Frontside AlCu metallization and NiV backside enable reliable solder or epoxy die bonding, and its 7.2 mΩ max RDS(on) (at VGS = 10 V) reflects production-tested on-resistance limits before packaging.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 150 V - Maximum drain-source blocking voltage before avalanche onset; defines usable bus voltage range in DC-DC and motor drive stages. |
| RDS(on) typ. | 4.9 mΩ @ VGS = 10 V, ID = 2.0 A - Typical on-state resistance measured at wafer level; determines conduction loss in high-current paths. |
| VGS(th) | 2–4 V - Gate threshold voltage range; ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers. |
| EAS | 45 mJ - Single-pulse avalanche energy rating; quantifies safe inductive energy absorption during switching transients. |
| IDSS | ≤1 µA @ VDS = 120 V - Maximum zero-gate-voltage leakage; critical for standby power integrity in always-on systems. |
| DIE SIZE | 6.7 × 4.5 mm² - Physical die footprint; constrains minimum package cavity size and thermal pad layout in custom modules. |
| THICKNESS | 250 µm - Mechanical thickness; impacts thermal resistance in stacked-die or double-sided cooling configurations. |
Pinout & Package
IPC302N15N3X1SA1 is supplied as a bare die without leadframe or molded package. Die mounting uses solder or adhesive bonding; frontside metallization is AlCu (for source/gate interconnect), backside is NiV (for drain contact). Passivation is nitride only on edge structure.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (backside) | High-current output node | Backside NiV metallization serves as primary drain connection; requires direct thermal and electrical contact to heatsink or PCB copper. |
| Gate (frontside) | Control input | Frontside AlCu pad accepts wire bond or flip-chip connection; gate drive must respect 2–4 V VGS(th) and ≤100 nA IGSS. |
| Source (frontside) | Reference node / current return path | Frontside AlCu pad provides low-inductance source return; critical for minimizing switching oscillation in high-dI/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| N-channel enhancement mode | Enables standard high-side or low-side switching topologies without external bias circuitry. |
| Wafer-level characterization | Electrical parameters (RDS(on), V(BR)DSS, VGS(th)) are tested pre-packaging, ensuring consistency prior to module integration. |
| AQL 0.65 visual inspection | Statistical quality control meets industrial-grade defect tolerance for die surface defects and metallization integrity. |
| ESD-sensitive handling | Classified per MIL-STD 883C; mandates grounded workstations and ionized air handling during die placement and wire bonding. |
Applications
| Industrial DC-DC Converters | Motor Drive Half-Bridge Stages |
|---|---|
Use Scenario: High-efficiency 48 V–150 V input isolated DC-DC converters for PLC power supplies and industrial sensors. IC Role / Device Role / Timing Role: Primary switch in synchronous rectifier or active clamp topology, operating at 100–500 kHz. Use Value: 4.9 mΩ RDS(on) minimizes conduction loss at 20–40 A continuous current, improving full-load efficiency by ≥1.2% vs. legacy 10 mΩ dies. | Use Scenario: Low-side switch in 3-phase BLDC motor inverters for HVAC blowers and conveyor drives. IC Role / Device Role / Timing Role: Fast-switching power stage element with controlled dV/dt to reduce EMI in compact motor control modules. Use Value: 45 mJ EAS rating enables reliable commutation under stall or overload, eliminating need for external snubbers in Class A insulation systems. |
| Custom Power Modules | High-Density Telecom Rectifiers |
Use Scenario: Embedded die in multi-chip power modules (MCPMs) integrating gate drivers and current sensing. IC Role / Device Role / Timing Role: Bare-die power switch co-packaged with SiC driver ICs and shunt resistors in hermetic ceramic substrates. Use Value: 6.7 × 4.5 mm² footprint allows tight die spacing and <0.8 mm interconnect pitch, supporting >50 kW/L power density targets. | Use Scenario: OR-ing FET in 48 V telecom rectifier shelves with hot-swap and redundancy requirements. IC Role / Device Role / Timing Role: Low-RDS(on) reverse-blocking switch placed between rectifier output and system bus. Use Value: 150 V V(BR)DSS exceeds 48 V + 100 V surge margin; 1 µA IDSS ensures <10 µW standby loss per FET in parallel arrays. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel bare-die power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB072N15N3G | Same silicon, but packaged in P-TO263-3; RDS(on) max 7.2 mΩ (same spec), but includes full package thermal and SOA data. | Used where board-level through-hole mounting and standardized heatsinking are preferred over custom die attach. | Select IPB072N15N3G when avoiding bare-die handling, wire bonding, or module assembly complexity. |
| IPP60R099C7 | 650 V CoolMOS™ C7, 99 mΩ RDS(on); higher voltage rating but significantly higher on-resistance and different gate charge profile. | Suitable for universal-input SMPS (>300 V AC), not for 150 V bus systems requiring low conduction loss. | Choose IPP60R099C7 only if system requires >400 V blocking capability; not a drop-in replacement for IPC302N15N3X1SA1's 150 V/4.9 mΩ operating point. |
Compared with IPB072N15N3G, IPC302N15N3X1SA1 trades package convenience for superior thermal interface control and smaller footprint; versus IPP60R099C7, it offers 20× lower RDS(on) at one-quarter the voltage rating-making it optimal for space-constrained, high-current 150 V industrial power stages.
Availability
IPC302N15N3X1SA1 is available at Aetrix Electronics and suitable for industrial DC-DC converters, motor drive half-bridge stages, and custom power modules requiring stable component supply and wafer-level traceability.
Supply support for IPC302N15N3X1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and fabrication facilities.
The OptiMOS™3 product line delivers high-performance, wafer-tested discrete power MOSFETs optimized for industrial switching efficiency, thermal reliability, and integration flexibility in custom power modules.
FAQ
What is the maximum allowable gate-source voltage for IPC302N15N3X1SA1?
The absolute maximum VGS rating is ±20 V, as specified in the Rev. 2.5 datasheet. Exceeding this risks gate oxide breakdown. For reliable operation, gate drive should be clamped to ≤15 V during switching transitions and held at 0 V when off, especially given its 2–4 V VGS(th) range and 100 nA IGSS limit at 20 V.
Does IPC302N15N3X1SA1 include integrated gate protection diodes?
No. This bare-die MOSFET has no on-die gate protection structures. External Zener clamping (e.g., 12–15 V TVS) between gate and source is required to prevent ESD-induced gate failure during handling and assembly, consistent with its MIL-STD 883C ESD-sensitive classification.
Can IPC302N15N3X1SA1 be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) enables inherent current sharing. However, layout symmetry (matched trace inductance/resistance), identical die attach pressure, and uniform thermal coupling to the heatsink are mandatory. Wafer-level RDS(on) variation (±15%) requires individual gate resistor tuning for dynamic balancing in >3-die arrays.
What is the recommended die attach material for IPC302N15N3X1SA1?
Both solder (e.g., AuSn or PbSn alloys) and conductive epoxy are qualified. Solder provides lower thermal resistance (<0.3 K/W) and higher reliability under thermal cycling; epoxy offers lower processing temperature (<200 °C) and stress relief for thin-die handling. Backside NiV metallization is compatible with both, per Infineon's die bond qualification report for OptiMOS™3.
IPC302N15N3X1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
IPC302N15N3X1SA1 FAQ
1.How can I place an order for IPC302N15N3X1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPC302N15N3X1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPC302N15N3X1SA1 reliable?
The price and inventory of IPC302N15N3X1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPC302N15N3X1SA1 is usually 5 days.
3.What payment methods are accepted for IPC302N15N3X1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPC302N15N3X1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPC302N15N3X1SA1?
IPC302N15N3X1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPC302N15N3X1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPC302N15N3X1SA1?
For technical support, including IPC302N15N3X1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPC302N15N3X1SA1 requirements.
6.How does Aetrix verify that IPC302N15N3X1SA1 is sourced from the original manufacturer or authorized distributors?
All IPC302N15N3X1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPC302N15N3X1SA1 meets industry standards.
7.What is the process for return or replacement of IPC302N15N3X1SA1?
All IPC302N15N3X1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPC302N15N3X1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPC302N15N3X1SA1 part is unused and in its original packaging.
Return procedure for IPC302N15N3X1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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