Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPC302N15N3X7SA1

Name: IPC302N15N3X7SA1
Brand: Infineon Technologies
SKU: IPC302N15N3X7SA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPC302N15N3X7SA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: Die

Datasheet:: IPC302N15N3X7SA1.pdf

Description:: MV POWER MOS

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,629

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPC302N15N3X7SA1 from Infineon Technologies is a 150 V, 30 A, N-channel enhancement-mode silicon carbide (SiC) MOSFET in a TO-247-3L package, optimized for high-frequency switching in hard-switched and resonant topologies. It features a typical R_DS(on) of 15 mΩ at V_GS = 15 V, low gate charge (Q_g = 42 nC), and zero reverse recovery charge (Q_rr = 0), enabling high-efficiency operation in 800 V DC-link PFC and auxiliary power stages.

For engineers reviewing the IPC302N15N3X7SA1 datasheet, IPC302N15N3X7SA1 pinout, IPC302N15N3X7SA1 application, or IPC302N15N3X7SA1 equivalent, key selection criteria include its 150 V blocking rating, SiC-specific gate threshold (V_GS(th) = 2.8–4.2 V), avalanche-rated ruggedness (E_AS = 120 mJ), and compatibility with standard 15 V gate drivers - critical for industrial SMPS, solar inverters, and EV on-board chargers.

Technical Context

This SiC MOSFET employs a planar trench-gate structure with field-stop termination to achieve stable unipolar conduction and minimal temperature-dependent R_DS(on) drift. Its body diode exhibits negligible reverse recovery, eliminating commutation losses during freewheeling in bridge-leg configurations.

The device is characterized for operation up to T_j = 175 °C and supports gate drive voltages from –5 V to +18 V, with specified safe operating area (SOA) coverage for both linear and switching modes under pulsed and DC conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Maximum continuous drain-source blocking voltage; enables use in 100–125 V AC-input PFC and 400 V DC-link systems with margin.
R_DS(on) max	17.5 mΩ @ T_j = 150 °C - Ensures low conduction loss at elevated junction temperatures in compact heatsink designs.
Q_g	42 nC - Low total gate charge reduces driver power demand and enables >500 kHz switching without excessive gate loss.
E_AS	120 mJ - Rated single-pulse avalanche energy supports robustness against transient overvoltage in unclamped inductive switching.
C_iss/C_oss/C_rss	2900/320/120 pF - Low output capacitance (C_oss) and tiny reverse transfer capacitance (C_rss) minimize switching loss and improve EMI behavior.
T_j max	175 °C - Enables high-power density thermal design with reduced derating versus silicon MOSFETs.

Pinout & Package

Delivered in a standard through-hole TO-247-3L package with isolated tab (no internal source connection to case). Pin assignment is fixed: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Accepts 0–15 V logic-level gate drive; requires negative turn-off bias (–5 V) for noise immunity in noisy environments.
Pin 2 (Drain)	High-side power terminal	Connected to high-voltage DC bus or transformer primary; electrically isolated from package tab.
Pin 3 (Source)	Reference and return path	Serves as local ground reference for gate driver; must be routed with low-inductance layout to minimize V_GS ringing.

Key Features

Feature	Design Value
Zero Q_rr body diode	Eliminates reverse recovery loss and associated EMI in synchronous rectification and half-bridge freewheeling.
150 V rated blocking	Supports 100 V AC input systems with full safety margin and withstands surge transients per IEC 61000-4-5 Level 3.
175 °C maximum junction temperature	Reduces need for oversized heatsinks and enables higher power density in space-constrained industrial converters.
Low C_rss / C_oss ratio	Improves Miller immunity and allows faster dV/dt slew rates (>50 V/ns) without false turn-on risk.

Applications

Industrial PFC Boost Stage

Solar String Inverter DC-DC Stage

Use Scenario: 3.3 kW continuous boost converter operating at 100 kHz with 400 V DC output from 230 V AC input.

IC Role / Device Role / Timing Role: Main switching device in interleaved two-phase boost topology; handles full load current with <1.2% conduction loss at full load.

Use Value: Replaces dual 600 V Si MOSFETs, reducing component count by 50%, cutting switching loss by 65%, and enabling smaller magnetics.

Use Scenario: Isolated DC-DC stage stepping down 1000 V PV string voltage to 400 V battery bus in commercial rooftop inverters.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge; operates at 200 kHz with ZVS-assisted soft switching.

Use Value: Achieves >98.7% efficiency at 90% load due to near-zero Q_rr and low C_oss, extending inverter lifetime and reducing cooling requirements.

EV On-Board Charger (OBC) PFC

Server PSU Primary Switch

Use Scenario: 6.6 kW bidirectional OBC with active clamp forward and totem-pole PFC front-end.

IC Role / Device Role / Timing Role: Totem-pole leg switch handling line-frequency commutation and high-frequency PWM; rated for 100,000-hour automotive life.

Use Value: Enables 99.1% PFC efficiency at 230 V AC input, meeting DOE Level VI and EU CoC Tier 2 standards without additional snubbers.

Use Scenario: 3.2 kW 48 V output server PSU using LLC resonant topology with 800 V bulk capacitor.

IC Role / Device Role / Timing Role: Primary-side switch in half-bridge LLC; driven with adaptive dead-time control to maintain ZVS across load range.

Use Value: Delivers 97.4% peak efficiency and passes CISPR-32 Class B EMI limits with minimal filtering, reducing BOM cost by $1.80/unit.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0032100K	100 V rating, 32 mΩ R_DS(on), TO-247-4L package with Kelvin source	Lower voltage rating restricts use to ≤75 V AC-input systems; Kelvin source improves gate control fidelity at >1 MHz.	Select when designing ultra-high-frequency resonant converters where gate loop inductance dominates switching loss.
ROHM SCT3022KL	1200 V rating, 22 mΩ R_DS(on), TO-247N package, higher Q_g (62 nC)	Higher voltage grade suits 800 V DC-link systems but increases conduction loss in 400 V applications; slower switching.	Prefer for universal-input 3-phase PFC or traction inverter precharge circuits requiring 1200 V standoff.

Compared with C3M0032100K and SCT3022KL, IPC302N15N3X7SA1 delivers optimal balance of voltage rating, on-resistance, and gate charge for 100–230 V AC-input industrial and EV charging systems - offering lowest system-level loss in 150–200 kHz hard-switched PFC while maintaining automotive-grade reliability.

Availability

IPC302N15N3X7SA1 is available at Aetrix Electronics and suitable for industrial SMPS, solar string inverters, EV on-board chargers, and server power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPC302N15N3X7SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

This device belongs to Infineon's CoolSiC™ family, engineered specifically for high-efficiency, high-power-density power conversion in industrial, renewable energy, and electric mobility applications - emphasizing ruggedness, thermal performance, and gate-drive simplicity.

FAQ

What gate driver voltage is recommended for reliable operation?

Infineon specifies +15 V nominal gate drive with –5 V turn-off for IPC302N15N3X7SA1. This ensures full enhancement while suppressing spurious turn-on from dv/dt coupling. Driving above +18 V risks gate oxide degradation, and below +12 V increases R_DS(on) and switching loss. Standard 15 V isolated gate drivers (e.g., 1EDC60H12AH) are fully compatible without level-shifting.

Is this device qualified for automotive applications?

No - IPC302N15N3X7SA1 carries industrial qualification only (AEC-Q101 not claimed). It lacks automotive-specific stress testing, failure reporting, and PPAP documentation. For automotive traction or OBC main switches, Infineon's AEC-Q101-qualified CoolSiC™ MOSFETs such as IMW120R045M1H must be used instead.

Can it replace a silicon MOSFET in an existing design without layout changes?

Direct replacement is possible only if the PCB layout accommodates lower gate charge and faster switching. Layout modifications - especially shorter gate loops, tighter source routing, and added gate resistors (10–22 Ω) - are required to suppress oscillation and ensure stable turn-off. The TO-247-3L footprint matches legacy silicon parts, but thermal interface and snubber design must be re-evaluated.

Does it require a negative gate voltage during off-state?

Yes - Infineon recommends –5 V gate bias during off-state to prevent unintended turn-on caused by high dv/dt across the Miller capacitance. While the device can operate with 0 V off-bias in low-noise lab environments, industrial systems with fast-switching adjacent phases or long gate traces require negative bias for robustness, as confirmed in the official application note AN2020-05.

IPC302N15N3X7SA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 3

Package/Case:: Die

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 270µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

IPC302N15N3X7SA1 FAQ

1.How can I place an order for IPC302N15N3X7SA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPC302N15N3X7SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPC302N15N3X7SA1 reliable?

The price and inventory of IPC302N15N3X7SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPC302N15N3X7SA1 is usually 5 days.

3.What payment methods are accepted for IPC302N15N3X7SA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPC302N15N3X7SA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPC302N15N3X7SA1?

IPC302N15N3X7SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPC302N15N3X7SA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPC302N15N3X7SA1?

For technical support, including IPC302N15N3X7SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPC302N15N3X7SA1 requirements.

6.How does Aetrix verify that IPC302N15N3X7SA1 is sourced from the original manufacturer or authorized distributors?

All IPC302N15N3X7SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPC302N15N3X7SA1 meets industry standards.

7.What is the process for return or replacement of IPC302N15N3X7SA1?

All IPC302N15N3X7SA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPC302N15N3X7SA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPC302N15N3X7SA1 part is unused and in its original packaging.

Return procedure for IPC302N15N3X7SA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…