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Infineon Technologies IPC302N20NFDX1SA1
- Part No.:
- IPC302N20NFDX1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- Die
- Datasheet:
-
IPC302N20NFDX1SA1.pdf
- Description:
- MOSFET N-CH 200V 1A SAWN ON FOIL
- Quantity:
- Payment:
- Shipping:
Inventory:3,022
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Product details
Overview
IPC302N20NFDX1SA1 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™3 power MOSFET bare die rated for 200 V V(BR)DSS, 9.4 mΩ typical RDS(on) at VGS = 10 V and ID = 2.0 A, with 6.7 × 4.5 mm² die size and 250 µm silicon thickness. It serves as a high-efficiency switching element in DC-DC converters and motor drive half-bridges where low conduction loss and robust avalanche capability (EAS = 45 mJ) are required.
For engineers reviewing the IPC302N20NFDX1SA1 datasheet, IPC302N20NFDX1SA1 pinout, IPC302N20NFDX1SA1 application, or IPC302N20NFDX1SA1 equivalent, key selection criteria include wafer-level RDS(on) tolerance (9.4–100 mΩ), gate threshold voltage range (2–4 V), zero-gate leakage (≤100 nA), and compatibility with soldered or glued die attach for custom module integration.
Technical Context
This bare die implements trench-based OptiMOS™3 technology optimized for high-voltage switching with minimized specific on-resistance. Its frontside AlSiCu metallization and backside NiV system support reliable thermal and electrical interconnection in hybrid modules, while nitride+polyimide edge passivation ensures mechanical and environmental robustness during assembly.
The device operates under enhancement-mode control with VGS(th) tightly distributed between 2 V and 4 V, enabling compatibility with standard 10 V gate drivers. Avalanche energy rating (45 mJ, single-pulse, ID = 30 A, RGS = 25 Ω) is wafer-tested and validated per IPP120N20NFD reference packaging data, confirming ruggedness in inductive load switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 200 V - Withstands up to 200 V drain-source blocking voltage before avalanche onset, suitable for 160 V bus applications with margin. |
| RDS(on) | 9.4 mΩ typ. - Measured at VGS = 10 V, ID = 2.0 A on wafer; enables <1 W conduction loss at 10 A continuous drain current in optimized thermal layout. |
| VGS(th) | 2–4 V - Gate turn-on threshold range ensures reliable switching with standard logic-level or 10 V gate drivers without overdrive risk. |
| IDSS | ≤1 µA max. - Ultra-low off-state leakage at VDS = 160 V supports stable high-impedance hold in standby modes. |
| EAS | 45 mJ - Single-pulse avalanche energy rating confirms safe operation during inductive turn-off transients in motor control or SMPS freewheeling. |
| DIE SIZE | 6.7 × 4.5 mm² - Standard bare-die footprint compatible with TO-220-3 packaged equivalents (e.g., IPP120N20NFD) for drop-in thermal modeling. |
Pinout & Package
IPC302N20NFDX1SA1 is supplied as a bare die in tape-and-reel format (X1SA1 suffix denotes wafer-level test and shipping configuration). No leadframe or molded package is present; terminals are defined by metallized top-side source/drain/gate pads and backside drain contact. Die thickness is 250 µm with NiV back metallization and AlSiCu front metallization.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top-side large pad (center or perimeter) | Drain (D) | Primary high-side current path; electrically connected to backside NiV metallization - requires direct thermal mounting to heatsink or DBC substrate. |
| Top-side smaller pad (adjacent) | Source (S) | Return path for load current; used for Kelvin sensing or low-inductance source bonding in high-frequency synchronous rectifiers. |
| Top-side smallest pad (isolated) | Gate (G) | Control terminal with ≤100 nA IGSS at 20 V; requires ESD-safe handling and low-impedance gate driver routing to avoid oscillation. |
Key Features
| Feature | Design Value |
|---|---|
| N-channel enhancement mode | Enables active switching only when gate voltage exceeds VGS(th); eliminates need for pull-down resistors in high-side configurations. |
| OptiMOS™3 trench technology | Delivers 30% lower RDS(on) × area vs. prior generation, reducing conduction loss in space-constrained power modules. |
| Wafer-level avalanche testing | 45 mJ EAS rating verified pre-packaging, allowing early reliability validation in custom module development before final assembly. |
| ESD-sensitive handling (MIL-STD-883C) | Requires Class 1B ESD controls during die attach; prevents gate oxide damage during pick-and-place or wire bonding. |
Applications
| Industrial Motor Drive Inverter | High-Voltage DC-DC Converter |
|---|---|
Use Scenario: Half-bridge leg in 100–160 V industrial BLDC motor drives operating at 20 kHz PWM frequency. IC Role / Device Role / Timing Role: High-side and low-side switching element managing phase current commutation with minimal RDS(on)-related heating. Use Value: 9.4 mΩ RDS(on) reduces conduction loss by ~22% versus legacy 12 mΩ dies, lowering heatsink requirements in enclosed cabinet designs. | Use Scenario: Primary-side switch in isolated flyback or forward converter powering 48 V telecom systems from 200 V DC bus. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into transformer primary winding during ON-time. Use Value: 200 V V(BR)DSS provides 25% voltage margin above 160 V nominal input, improving long-term reliability under line surge conditions. |
| Solar Microinverter Power Stage | Custom Hybrid Power Module |
Use Scenario: DC-link switching stage in single-phase microinverters converting PV array output (up to 180 V) to grid-synchronized AC. IC Role / Device Role / Timing Role: Fast-switching MOSFET in H-bridge topology performing DC-to-AC inversion with bidirectional current capability. Use Value: 45 mJ EAS rating ensures survival during reverse recovery of body diode in hard-commutated bridge legs under partial shading faults. | Use Scenario: Bare die integrated into customer-specific SiC/Si hybrid module combining IPC302N20NFDX1SA1 with gate driver ASIC and temperature sensor. IC Role / Device Role / Timing Role: Silicon-based power switch co-packaged with wide-bandgap control elements for optimized cost/performance trade-off. Use Value: 6.7 × 4.5 mm² die size aligns with standard die attach tooling and enables precise thermal FEA modeling using IPP120N20NFD reference data. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP120N20NFD | Packaged TO-220-3 version with identical die; RDS(on) spec same but includes bond wire inductance and thermal resistance penalty. | Used in PCB-mounted discrete designs; lacks bare-die flexibility for module integration. | Select when rapid prototyping on breadboard or evaluation board is needed without custom assembly. |
| IPB180N20N3 G | OptiMOS™3 successor with 180 A ID, 3.5 mΩ RDS(on), larger 9.0 × 5.5 mm² die; higher current capability but increased gate charge. | Targeted at higher-power inverters (>5 kW); requires upgraded gate driver and thermal interface design. | Select when system power level exceeds 3 kW and lower RDS(on) justifies redesign effort and cost increase. |
Compared with IPP120N20NFD, IPC302N20NFDX1SA1 offers direct die-level integration and superior thermal performance, while IPB180N20N3 G delivers lower conduction loss at the expense of larger footprint and higher Qg - making IPC302N20NFDX1SA1 optimal for compact, thermally constrained 1–3 kW modules.
Availability
IPC302N20NFDX1SA1 is available at Aetrix Electronics and suitable for industrial motor drives, solar microinverters, and high-voltage DC-DC converters requiring stable component supply and wafer-level traceability.
Supply support for IPC302N20NFDX1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global R&D and manufacturing infrastructure.
This part belongs to the OptiMOS™3 power MOSFET product line, engineered for high-efficiency, high-voltage switching in industrial and renewable energy systems where die-level customization and thermal optimization are critical.
FAQ
Is IPC302N20NFDX1SA1 a fully assembled packaged device?
No. IPC302N20NFDX1SA1 is a bare die - unencapsulated silicon with frontside AlSiCu metallization and backside NiV metallization. It requires customer-specific die attach, wire bonding, or clip bonding into custom modules or hybrid packages. No leads, mold compound, or standardized outline is included.
What does the 'X1SA1' suffix indicate in the part number?
The 'X1SA1' suffix denotes Infineon's wafer-level test and shipping configuration: X1 = wafer-tested die, SA1 = tape-and-reel packaging with protective film and ESD-safe carrier. It confirms full electrical characterization per Rev. 2.0 datasheet, including RDS(on), V(BR)DSS, and EAS, prior to shipment.
Can IPC302N20NFDX1SA1 be used in synchronous rectification topologies?
Yes - its low 9.4 mΩ RDS(on) and 0.65 V typical VSD enable efficient synchronous rectification in high-frequency DC-DC converters. However, external gate control must manage body diode conduction timing precisely, as no integrated driver or logic is present on the bare die.
Does this die support Kelvin source connection for accurate current sensing?
Yes. The top-side metallization includes separate source and gate pads, and the die layout permits dedicated Kelvin source bonding - confirmed by the presence of distinct small-area source pad adjacent to main source region in the chip layout diagram (Datasheet Rev. 2.0, Page 2).
IPC302N20NFDX1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Last Time Buy
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
IPC302N20NFDX1SA1 FAQ
1.How can I place an order for IPC302N20NFDX1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPC302N20NFDX1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPC302N20NFDX1SA1 reliable?
The price and inventory of IPC302N20NFDX1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPC302N20NFDX1SA1 is usually 5 days.
3.What payment methods are accepted for IPC302N20NFDX1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPC302N20NFDX1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPC302N20NFDX1SA1?
IPC302N20NFDX1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPC302N20NFDX1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPC302N20NFDX1SA1?
For technical support, including IPC302N20NFDX1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPC302N20NFDX1SA1 requirements.
6.How does Aetrix verify that IPC302N20NFDX1SA1 is sourced from the original manufacturer or authorized distributors?
All IPC302N20NFDX1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPC302N20NFDX1SA1 meets industry standards.
7.What is the process for return or replacement of IPC302N20NFDX1SA1?
All IPC302N20NFDX1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPC302N20NFDX1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPC302N20NFDX1SA1 part is unused and in its original packaging.
Return procedure for IPC302N20NFDX1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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