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Infineon Technologies IPC302N25N3X1SA1
- Part No.:
- IPC302N25N3X1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- Die
- Datasheet:
-
IPC302N25N3X1SA1.pdf
- Description:
- MOSFET N-CH 250V 1A SAWN ON FOIL
- Quantity:
- Payment:
- Shipping:
Inventory:2,304
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Product details
Overview
IPC302N25N3 from Infineon Technologies is an N-channel enhancement-mode silicon power MOSFET bare die, rated for 250 V V(BR)DSS and 16 mΩ typical RDS(on) at VGS = 10 V, with a 6.7 × 4.5 mm² die size and 250 µm thickness. It is designed for high-efficiency DC-DC converters, motor control stages, and industrial SMPS where low conduction loss and robust avalanche capability (40 mJ single-pulse) are critical.
For engineers reviewing the IPC302N25N3 datasheet, IPC302N25N3 pinout, IPC302N25N3 application, or IPC302N25N3 equivalent, key selection criteria include wafer-level RDS(on) tolerance (16–100 mΩ), gate threshold voltage range (2–4 V), zero-gate-voltage drain leakage (≤1 µA at 200 V), and die-level passivation (nitride edge-only).
Technical Context
This bare-die MOSFET operates in enhancement mode with a silicon planar process and AlCu frontside metallization. Its 250 V breakdown voltage supports medium-voltage switching in offline and industrial power supplies, while its 250 µm thickness enables thermal integration into custom packages with optimized heat spreading.
The device features NiV backside metallization for solder or epoxy die attach, and is electrostatic discharge sensitive per MIL-STD-883C. Avalanche energy rating (40 mJ, ID = 30 A, RGS = 25 Ω) is wafer-tested and referenced to the packaged IPP200N25N3 G datasheet for system-level ruggedness validation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 250 V - Maximum blocking voltage before avalanche onset; defines upper limit for DC bus or flyback primary-side operation |
| RDS(on) | 16 mΩ typ. at VGS = 10 V - Conduction loss baseline for 2 A continuous drain current; max 100 mΩ due to wafer test limits |
| VGS(th) | 2–4 V - Gate turn-on threshold range; ensures compatibility with 3.3 V and 5 V logic-level drivers |
| IDSS | ≤1 µA at VDS = 200 V - Low off-state leakage preserves efficiency in high-impedance bias networks |
| EAS | 40 mJ - Single-pulse avalanche energy; enables safe inductive switching in relay drivers and solenoid controls |
| Die size | 6.7 × 4.5 mm² - Physical footprint constrains layout area and thermal interface design in hybrid modules |
| Thickness | 250 µm - Enables thin-profile embedding in DBC substrates or metal-base packages with controlled warpage |
Pinout & Package
IPC302N25N3 is supplied as a bare die without leadframe or molded package. Die bonding uses solder or epoxy; backside is NiV metallized (drain connection), frontside is AlCu metallized (source and gate pads). Passivation is nitride only on edge structure.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Frontside AlCu Pad A | Source | Low-impedance return path; requires direct wire-bonding or flip-chip interconnect to PCB or substrate |
| Frontside AlCu Pad B | Gate | Control electrode; sensitive to ESD; must be routed with minimized inductance for fast switching |
| Backside NiV Surface | Drain | Main high-side power terminal; thermally and electrically coupled via die attach to heatsink or DBC baseplate |
Key Features
| Feature | Design Value |
|---|---|
| N-channel enhancement mode | Ensures normally-off operation for fail-safe power stage startup and fault containment |
| Wafer-level RDS(on) characterization | Enables pre-packaging performance screening; reduces post-assembly binning yield loss |
| NiV backside metallization | Supports reliable solder or conductive epoxy attachment with low interfacial resistance and thermal stress |
| Nitride edge passivation | Prevents moisture ingress and ion migration at die perimeter while minimizing capacitance overhead |
| MIL-STD-883C ESD classification | Requires handling under Class 1B protocols (≤250 V HBM); informs ESD-safe assembly line design |
Applications
| Industrial Motor Drives | Server PSU Primary Switches |
|---|---|
Use Scenario: Half-bridge IGBT/MOSFET gate driver output stage in 3 kW HVAC inverter. IC Role / Device Role / Timing Role: High-side switching element handling 250 V DC link with 10 kHz PWM. Use Value: 16 mΩ RDS(on) minimizes conduction loss at 15 A RMS; 40 mJ EAS withstands motor phase reversal transients. | Use Scenario: Active clamp forward converter primary switch in 80 PLUS Titanium server PSU. IC Role / Device Role / Timing Role: Main power switch operating at 200 kHz with 250 V input. Use Value: Low gate threshold (2–4 V) enables direct drive from SiC gate driver ICs; 250 µm thickness aids thermal coupling to copper baseplate. |
| Solenoid Control Modules | Renewable Energy Inverters |
Use Scenario: 24 V/48 V DC solenoid actuator driver in automated valve systems. IC Role / Device Role / Timing Role: Low-side switch controlling inductive load with flyback diode recovery. Use Value: 250 V rating provides margin against L·di/dt spikes up to 200 V; nitride edge passivation prevents corrosion in humid environments. | Use Scenario: DC optimizer string switch in residential solar microinverters. IC Role / Device Role / Timing Role: Isolation-stage MOSFET in bidirectional buck-boost topology. Use Value: 6.7 × 4.5 mm² die size allows compact double-sided cooling in encapsulated module; AlCu metallization ensures wire-bond reliability over 10,000 thermal cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP200N25N3 G | Same die, but in PG-TO220-3 package with defined pinout and thermal resistance (RthJC = 1.2 K/W) | Used in prototyping and low-volume board-level designs requiring standard through-hole mounting | Select when mechanical integration, standardized thermal testing, or quick evaluation without die attach is required |
| IPB070N25N3 G | 250 V, 7.0 mΩ RDS(on), larger die (8.5 × 5.0 mm²), 300 µm thickness | Targeted at higher-current (>30 A) industrial inverters needing lower conduction loss and enhanced thermal mass | Select when system-level RDS(on) budget demands sub-10 mΩ or junction temperature rise must stay below 60 K at full load |
Compared with IPP200N25N3 G, IPC302N25N3 offers greater packaging flexibility but requires custom die attach and wire bonding; versus IPB070N25N3 G, it trades 4.0 mΩ higher RDS(on) for smaller footprint and thinner profile-ideal for space-constrained hybrid modules.
Availability
IPC302N25N3 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solenoid control modules, and renewable energy inverters requiring stable component supply and wafer-level traceability.
Supply support for IPC302N25N3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
IPC302N25N3 belongs to the OptiMOS™ 3 power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial and computing power conversion systems.
FAQ
What is the maximum allowable junction temperature for IPC302N25N3?
The datasheet does not specify a standalone TJ(max) for the bare die. Thermal design must reference the packaged IPP200N25N3 G datasheet, which states TJ(max) = 175 °C. For IPC302N25N3, safe operating temperature depends on die attach quality, substrate thermal resistance, and cooling method-designers must validate junction temperature via IR thermography or thermo-mechanical simulation under actual mounting conditions.
Is IPC302N25N3 RoHS compliant?
Yes. Infineon confirms RoHS compliance for all OptiMOS™ 3 products, including IPC302N25N3, per Directive 2011/65/EU. The NiV backside and AlCu frontside metallizations contain no restricted substances above threshold limits, and the nitride passivation layer is fully compliant. Certificate of Compliance is available upon request from Aetrix Electronics.
Can IPC302N25N3 be used in parallel configurations?
Yes, but with strict layout and thermal symmetry requirements. Matching VGS(th) (2–4 V) and RDS(on) (16–100 mΩ) tolerances necessitate binning or active gate-drive tuning. Parallel operation requires identical die attach voiding, wire bond length, and thermal path impedance to prevent current imbalance-validated in Infineon's application note AN2009-04 for OptiMOS™ die paralleling.
Does IPC302N25N3 include integrated gate protection?
No. The bare die has no integrated gate resistor, TVS, or ESD clamp. External gate protection-such as a 10 Ω series resistor and 12 V Zener clamp between gate and source-is mandatory per Infineon's handling guidelines. This is required due to its MIL-STD-883C Class 1B ESD sensitivity and absence of on-die protection structures.
IPC302N25N3X1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Not For New Designs
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
IPC302N25N3X1SA1 FAQ
1.How can I place an order for IPC302N25N3X1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPC302N25N3X1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPC302N25N3X1SA1 reliable?
The price and inventory of IPC302N25N3X1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPC302N25N3X1SA1 is usually 5 days.
3.What payment methods are accepted for IPC302N25N3X1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPC302N25N3X1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPC302N25N3X1SA1?
IPC302N25N3X1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPC302N25N3X1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPC302N25N3X1SA1?
For technical support, including IPC302N25N3X1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPC302N25N3X1SA1 requirements.
6.How does Aetrix verify that IPC302N25N3X1SA1 is sourced from the original manufacturer or authorized distributors?
All IPC302N25N3X1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPC302N25N3X1SA1 meets industry standards.
7.What is the process for return or replacement of IPC302N25N3X1SA1?
All IPC302N25N3X1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPC302N25N3X1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPC302N25N3X1SA1 part is unused and in its original packaging.
Return procedure for IPC302N25N3X1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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