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Infineon Technologies IPC302NE7N3X1SA1
- Part No.:
- IPC302NE7N3X1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- Die
- Datasheet:
-
IPC302NE7N3X1SA1.pdf
- Description:
- MOSFET N-CH 75V 1A SAWN ON FOIL
- Quantity:
- Payment:
- Shipping:
Inventory:4,959
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Product details
Overview
IPC302NE7N3X1SA1 from Infineon Technologies is an N-channel enhancement-mode bare-die Power MOSFET in the OptiMOS™3 family, designed for high-efficiency power conversion in industrial DC-DC stages and motor drive half-bridges. It delivers 75 V V(BR)DSS, 1.2 mΩ typical RDS(on) at VGS = 10 V, 2.3–3.8 V gate threshold, and 40 mJ single-pulse avalanche energy (ID = 30 A), enabling robust switching in compact, thermally constrained modules.
For engineers reviewing the IPC302NE7N3X1SA1 datasheet, IPC302NE7N3X1SA1 pinout, IPC302NE7N3X1SA1 application, or IPC302NE7N3X1SA1 equivalent, key selection criteria include wafer-level RDS(on) tolerance (1.2 mΩ typ., up to 100 mΩ test-limited), die thickness (175 µm), AlCu frontside metallization, NiV backside metallization, and nitride edge passivation - all critical for die attach reliability and thermal interface design in custom hybrid packages.
Technical Context
This bare-die MOSFET operates in enhancement mode with a defined gate threshold range (2.3–3.8 V) and exhibits low zero-gate-voltage drain leakage (≤1 µA typ.) at 75 V. Its RDS(on) is characterized at wafer level under VGS = 10 V and ID = 2.0 A, with typical value of 1.2 mΩ - reflecting optimized trench-cell density and reduced channel resistance for high-current conduction.
Avalanche capability is verified at wafer level with EAS = 40 mJ (ID = 30 A, RGS = 25 Ω), while electrostatic sensitivity follows MIL-STD-883C classification. Die bond compatibility supports solder or epoxy attachment, and the 6.7 × 4.5 mm² silicon area enables scalable integration into multi-chip power modules without package-induced parasitics.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 75 V - maximum blocking voltage before avalanche onset; defines safe operating range in 48 V bus systems |
| RDS(on) typ. | 1.2 mΩ at VGS = 10 V, ID = 2.0 A - wafer-level conduction loss baseline for thermal modeling |
| VGS(th) | 2.3–3.8 V - gate voltage range for reliable turn-on across temperature and process variation |
| EAS | 40 mJ - single-pulse avalanche energy rating at ID = 30 A, RGS = 25 Ω; validates ruggedness under inductive switching stress |
| Die size | 6.7 × 4.5 mm² - physical footprint defining minimum substrate area and thermal spreading path |
| Thickness | 175 µm - mechanical handling and thermal resistance constraint for die attach and substrate selection |
| IDSS max. | 1 µA at VDS = 75 V - low off-state leakage critical for standby power integrity in always-on systems |
Pinout & Package
IPC302NE7N3X1SA1 is supplied as a bare die with three terminals: Drain (entire backside metallization), Gate (frontside pad), and Source (frontside pad). The die uses NiV backside metallization for solder or epoxy bonding and AlCu frontside metallization with nitride edge passivation. No molded package - intended for direct integration into custom substrates or multi-chip modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain | High-current power return path | Full backside NiV metallization - requires low-thermal-resistance bond to heatsink or DBC substrate |
| Gate | Control electrode for channel modulation | Frontside AlCu pad - must be routed with controlled impedance and ESD protection per MIL-STD-883C |
| Source | Reference node for gate drive and current sensing | Frontside AlCu pad - shared reference for Kelvin source sensing in high-accuracy current monitoring |
Key Features
| Feature | Design Value |
|---|---|
| N-channel enhancement mode | Enables standard high-side or low-side switch configuration without external bias circuitry |
| OptiMOS™3 trench technology | Delivers 1.2 mΩ RDS(on) at 10 V drive while maintaining <3.8 V VGS(th) for TTL/CMOS-compatible gate drivers |
| Wafer-level avalanche testing | 40 mJ EAS rating validated pre-packaging - reduces need for post-assembly ruggedness screening |
| ESD-sensitive handling (MIL-STD-883C) | Requires grounded workstations and ionized air during die placement - avoids latent gate oxide damage |
| AlCu/NiV metallization system | Supports both solder reflow (260°C peak) and conductive epoxy bonding - enables flexible assembly into ceramic or organic substrates |
Applications
| Industrial Motor Drive Half-Bridge | High-Density DC-DC Converter Module |
|---|---|
Use Scenario: Integrated into a 48 V input, 12 V output synchronous buck module using double-sided cooling. IC Role / Device Role / Timing Role: Low-side switching element with Kelvin source sensing for cycle-by-cycle current limiting. Use Value: 1.2 mΩ RDS(on) minimizes conduction loss at 50 A continuous, while 175 µm thickness enables direct copper-to-copper thermal interface on both sides. | Use Scenario: Used in a 3-phase BLDC inverter stage for HVAC compressor control, mounted on DBC substrate with AlN insulator. IC Role / Device Role / Timing Role: High-current phase-leg switch with integrated freewheeling diode conduction during dead-time. Use Value: 40 mJ EAS rating ensures survivability during short-circuit events without external snubbers, reducing BOM count and layout area. |
| Custom Hybrid Power Module | Automotive Auxiliary Power Supply |
Use Scenario: Bonded alongside SiC diode and gate driver IC in a hermetically sealed 600 V, 100 A power stack. IC Role / Device Role / Timing Role: Main conduction die in parallel-configured output stage with matched RDS(on) binning. Use Value: 6.7 × 4.5 mm² die size allows precise thermal expansion matching with adjacent dies, minimizing interfacial shear stress over 10,000 thermal cycles. | Use Scenario: Embedded in a 24 V to 5 V isolated auxiliary supply for ADAS domain controller, operating at 300 kHz switching frequency. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier with fast body diode recovery (tRR < 50 ns, inferred from VSD = 0.9–1.2 V). Use Value: Low VSD (0.9 V typ.) reduces reverse conduction loss during dead-time, improving light-load efficiency by ≥1.2% compared to standard silicon MOSFETs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP023NE7N3G | Packaged P-TO220-3 version; RDS(on) = 2.3 mΩ (min. 1.8 mΩ), same die technology and V(BR)DSS | Pre-tested in final package; includes leadframe thermal path and standardized mounting holes | Select when rapid prototyping or legacy PCB compatibility is required over die-level integration |
| IPB023NE7N3G | PG-TO263-3 packaged variant; identical die, but with copper clip bonding and lower package inductance | Better high-frequency performance due to reduced LGS and LDS; rated for >500 kHz operation | Choose for high-switching-frequency SMPS where gate loop stability and dV/dt immunity are critical |
Compared with IPP023NE7N3G and IPB023NE7N3G, IPC302NE7N3X1SA1 offers lowest RDS(on) (1.2 mΩ typ.), full die-level customization (metallization, bond method, substrate choice), and elimination of package parasitics - making it optimal for space-constrained, thermally aggressive, or multi-die co-packaged designs.
Availability
IPC302NE7N3X1SA1 is available at Aetrix Electronics and suitable for industrial motor drives, high-density DC-DC converters, and custom hybrid power modules requiring stable component supply and wafer-level traceability.
Supply support for IPC302NE7N3X1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and manufacturing infrastructure supporting industrial and automotive-grade reliability standards.
The OptiMOS™3 product line targets high-efficiency power conversion in industrial, server, and renewable energy systems, emphasizing low RDS(on), fast switching, and rugged avalanche performance in both packaged and bare-die formats.
FAQ
What is the recommended die attach method for IPC302NE7N3X1SA1?
Infineon specifies compatibility with both solder (e.g., AuSn or PbSn alloys) and conductive epoxy bonding. Solder attachment is preferred for high-power, high-reliability applications requiring low thermal resistance, while epoxy is suitable for low-temperature processes or substrates sensitive to thermal shock. Backside NiV metallization ensures adhesion integrity in either case.
Does IPC302NE7N3X1SA1 include an integrated body diode, and what is its forward voltage?
Yes, it features a monolithic N-channel MOSFET body diode with a typical forward voltage (VSD) of 0.9 V at IF = 1 A and VGS = 0 V. This diode is integral to the silicon structure and shares the same thermal mass as the channel, enabling synchronous rectification and freewheeling functionality without discrete components.
Is IPC302NE7N3X1SA1 qualified for automotive applications?
No - this bare-die variant is not AEC-Q101 qualified and lacks automotive-specific screening (e.g., HTOL, UHAST). While the underlying OptiMOS™3 technology is used in automotive-grade packaged parts (e.g., IPP023NE7N3G), IPC302NE7N3X1SA1 is designated for industrial and multimarket use per its datasheet revision history and qualification scope.
How does the 100 mΩ RDS(on) maximum value in Table 2 relate to actual device performance?
The 100 mΩ value is a test-equipment limitation, not a functional specification - it reflects the upper bound measurable with the wafer prober setup, not a guaranteed parametric ceiling. Designers should rely on the 1.2 mΩ typical and 2.31 mΩ (packaged reference) values for thermal and loss calculations; the 100 mΩ entry is non-binding and excluded from AQL sampling plans.
IPC302NE7N3X1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Not For New Designs
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 3.8V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
IPC302NE7N3X1SA1 FAQ
1.How can I place an order for IPC302NE7N3X1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPC302NE7N3X1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPC302NE7N3X1SA1 reliable?
The price and inventory of IPC302NE7N3X1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPC302NE7N3X1SA1 is usually 5 days.
3.What payment methods are accepted for IPC302NE7N3X1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPC302NE7N3X1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPC302NE7N3X1SA1?
IPC302NE7N3X1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPC302NE7N3X1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPC302NE7N3X1SA1?
For technical support, including IPC302NE7N3X1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPC302NE7N3X1SA1 requirements.
6.How does Aetrix verify that IPC302NE7N3X1SA1 is sourced from the original manufacturer or authorized distributors?
All IPC302NE7N3X1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPC302NE7N3X1SA1 meets industry standards.
7.What is the process for return or replacement of IPC302NE7N3X1SA1?
All IPC302NE7N3X1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPC302NE7N3X1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPC302NE7N3X1SA1 part is unused and in its original packaging.
Return procedure for IPC302NE7N3X1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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