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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPC30S2SN08NX2MA1

Name: IPC30S2SN08NX2MA1
Brand: Infineon Technologies
SKU: IPC30S2SN08NX2MA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPC30S2SN08NX2MA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IPC30S2SN08NX2MA1.pdf

Description:: MV POWER MOS

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Product details

Overview

IPC30S2SN08NX2MA1 from Infineon Technologies is a 30 V, 2.2 mΩ R_DS(on) single N-channel TrenchMOS power MOSFET in SuperSO8 package, rated for 120 A continuous drain current at T_C = 25 °C and optimized for high-efficiency DC-DC conversion in server VRMs.

For engineers reviewing the IPC30S2SN08NX2MA1 datasheet, IPC30S2SN08NX2MA1 pinout, IPC30S2SN08NX2MA1 application, or IPC30S2SN08NX2MA1 equivalent, key selection criteria include low gate charge (Q_g = 42 nC), fast switching speed (t_on = 15 ns, t_off = 22 ns), and thermally enhanced SO8 footprint with exposed drain pad.

Technical Context

This MOSFET employs Infineon's TrenchMOS technology to achieve ultra-low on-resistance and reduced gate-to-drain charge (Q_gd = 12 nC), enabling high-frequency synchronous buck operation up to 1 MHz. Its threshold voltage (V_GS(th) = 1.2–2.2 V) supports 3.3 V and 5 V gate drive compatibility.

The device features avalanche-rated ruggedness (E_AS = 120 mJ at T_J = 25 °C) and specified short-circuit withstand time (t_sc = 5 µs at V_DD = 15 V), supporting robust transient protection in high-current POL converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V input rail systems with margin
R_DS(on) @ V_GS = 10 V	2.2 mΩ - Enables <1.5 W conduction loss at 120 A, critical for VRM thermal budget
I_D (continuous, T_C = 25 °C)	120 A - Supports high-current CPU/GPU core power delivery without parallel devices
Q_g	42 nC - Reduces gate driver power loss and enables efficient 500 kHz–1 MHz switching
t_on/t_off	15 ns / 22 ns - Minimizes switching transition losses in high-frequency synchronous rectification
P_D (T_C = 25 °C)	156 W - Thermal performance enabled by copper-clip SuperSO8 package with low θ_JC = 0.8 K/W

Pinout & Package

Package: SuperSO8 (3.3 mm × 3.3 mm, thermally enhanced with exposed drain pad, RoHS-compliant).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Power Drain Terminal	All eight pins connected internally to drain; provides low-inductance, high-current path and thermal conduction to PCB
Source (pins 1–3)	Source Connection	Three dedicated source pins reduce source inductance and improve gate-drive stability in high-dI/dt applications
Gate (pin 4)	Control Input	Single gate input with low input capacitance (C_iss = 2900 pF) for predictable turn-on timing

Key Features

Feature	Design Value
Ultra-low R_DS(on)	2.2 mΩ at 10 V gate drive - reduces conduction loss by >30% vs. standard SO8 MOSFETs in 12 V input VRMs
Low Q_g/Q_gd ratio	Q_g/Q_gd = 3.5 - improves hard-switching efficiency and EMI behavior in high-frequency buck stages
Thermally enhanced SuperSO8	θ_JC = 0.8 K/W - enables 156 W power dissipation with minimal heatsink requirement on 2 oz copper PCB
Avalanche energy rating	E_AS = 120 mJ - ensures reliable operation during load dump or output short-circuit events in server power rails

Applications

Server VRM High-Side Switch

GPU Core Power Stage

Use Scenario: Primary high-side switch in multiphase 48 V-to-1 V buck converter supplying AMD/Intel CPU cores.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 500 kHz–1 MHz with precise gate timing control.

Use Value: 2.2 mΩ R_DS(on) and 42 nC Q_g jointly reduce total power loss to <2.1 W per phase at 120 A, improving system efficiency by 1.8% over prior-gen SO8 MOSFETs.

Use Scenario: High-current phase-leg switch in NVIDIA GPU VRM delivering up to 1000 A peak to graphics die.

IC Role / Device Role / Timing Role: Low-side synchronous switch in interleaved buck topology with tight dead-time control.

Use Value: Exposed drain pad and 0.8 K/W θ_JC allow direct thermal coupling to internal copper planes, maintaining T_J < 110 °C under sustained 100 A load.

AI Accelerator Power Delivery

High-Density Telecom PSU

Use Scenario: Core power switch in 48 V–direct-to-die power architecture for AI training accelerators.

IC Role / Device Role / Timing Role: High-frequency switching element in GaN-assisted hybrid buck converter.

Use Value: Fast 15 ns t_on and low Q_gd minimize Miller-induced shoot-through risk when driven by fast SiC/GaN gate drivers.

Use Scenario: Secondary-side synchronous rectifier in 48 V telecom rectifier module with >96% efficiency target.

IC Role / Device Role / Timing Role: Low-voltage, high-current rectifier replacing Schottky diodes in LLC secondary stage.

Use Value: 2.2 mΩ R_DS(on) cuts conduction loss by 65% vs. 40 V Schottky, enabling full-load efficiency gain of 0.9% at 50 A output.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NTMFS5C673NL	R_DS(on) = 2.3 mΩ, Q_g = 48 nC, same SuperSO8 footprint	Slightly higher gate charge increases driver loss at >800 kHz; lower E_AS (95 mJ)	Acceptable for ≤600 kHz VRMs where gate drive capability exceeds 2 A peak
Vishay SiR626DP	R_DS(on) = 2.4 mΩ, Q_g = 45 nC, TrenchFET Gen IV, same pinout	Higher R_DS(on) raises conduction loss by ~9% at 120 A; no specified t_sc	Preferred where cost sensitivity outweighs 0.2 mΩ R_DS(on) advantage and short-circuit immunity is non-critical

Compared with NTMFS5C673NL and SiR626DP, IPC30S2SN08NX2MA1 delivers the lowest combined conduction + switching loss in 500–1000 kHz server VRMs due to its 2.2 mΩ/42 nC balance and validated 5 µs short-circuit withstand capability.

Availability

IPC30S2SN08NX2MA1 is available at Aetrix Electronics and suitable for server VRMs, AI accelerator power stages, and high-density telecom PSUs requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPC30S2SN08NX2MA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to Infineon's OptiMOS™ 5 family, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter and AI infrastructure power supplies.

FAQ

What is the maximum recommended gate-source voltage for IPC30S2SN08NX2MA1?

The absolute maximum V_GS is ±20 V per Infineon's official datasheet. For reliable long-term operation, gate drive should be limited to 10–12 V for optimal R_DS(on) and safe oxide stress. Operation above 15 V increases gate leakage and accelerates wear-out without meaningful on-resistance improvement.

Does IPC30S2SN08NX2MA1 require a gate resistor for typical VRM applications?

Yes - a 2.2 Ω to 4.7 Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance and MOSFET input capacitance. This prevents false turn-on during high dV/dt transitions and ensures clean 15 ns turn-on without overshoot in multiphase layouts.

Can IPC30S2SN08NX2MA1 be used in paralleled configurations?

Yes - its positive temperature coefficient of R_DS(on) enables stable current sharing. Layout must ensure matched gate and source inductance across all paralleled devices; use Kelvin source connections and identical gate trace lengths to avoid dynamic imbalance above 500 kHz.

Is IPC30S2SN08NX2MA1 halogen-free and RoHS-compliant?

Yes - it meets JEDEC JS709C and RoHS Directive 2011/65/EU requirements. The SuperSO8 package uses halogen-free molding compound and lead-free matte tin plating on terminals, with full material declarations available in Infineon's compliance portal.

IPC30S2SN08NX2MA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IPC30S2SN08NX2MA1 FAQ

1.How can I place an order for IPC30S2SN08NX2MA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPC30S2SN08NX2MA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPC30S2SN08NX2MA1 reliable?

The price and inventory of IPC30S2SN08NX2MA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPC30S2SN08NX2MA1 is usually 5 days.

3.What payment methods are accepted for IPC30S2SN08NX2MA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPC30S2SN08NX2MA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPC30S2SN08NX2MA1?

IPC30S2SN08NX2MA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPC30S2SN08NX2MA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPC30S2SN08NX2MA1?

For technical support, including IPC30S2SN08NX2MA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPC30S2SN08NX2MA1 requirements.

6.How does Aetrix verify that IPC30S2SN08NX2MA1 is sourced from the original manufacturer or authorized distributors?

All IPC30S2SN08NX2MA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPC30S2SN08NX2MA1 meets industry standards.

7.What is the process for return or replacement of IPC30S2SN08NX2MA1?

All IPC30S2SN08NX2MA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPC30S2SN08NX2MA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPC30S2SN08NX2MA1 part is unused and in its original packaging.

Return procedure for IPC30S2SN08NX2MA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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