Infineon Technologies IPC80N04S403ATMA1
- Part No.:
- IPC80N04S403ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
IPC80N04S403ATMA1.pdf
- Description:
- MOSFET N-CH 40V 80A TDSON-8-23
- Quantity:
- Payment:

- Shipping:

Inventory:5,330
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Product details
Overview
IPC80N04S403ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PG-TDSON-8-23 package, rated for 40 V VDS, 3.3 mΩ RDS(on) at VGS = 10 V and ID = 40 A, with 100% single-pulse avalanche testing and MSL1 reflow compatibility - deployed in automotive DC-DC converters and motor control inverters.
For engineers reviewing the IPC80N04S403ATMA1 datasheet, IPC80N04S403ATMA1 pinout, IPC80N04S403ATMA1 application, or IPC80N04S403ATMA1 equivalent, key selection criteria include its 1.5 K/W RthJC, 80 A continuous drain current at TC = 25 °C, 215 mJ EAS, 4400–5720 pF Ciss, and AEC qualification for under-hood power stages.
Technical Context
This OptiMOSTM-T2 MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its gate threshold voltage (2.0–4.0 V) ensures robust noise immunity, while the 5.6 V gate plateau voltage supports stable Miller region control during hard-switching.
The device integrates a co-packaged body diode with 0.9–1.3 V VSD at 40 A and 45 ns trr, enabling synchronous rectification and freewheeling in half-bridge topologies. Thermal resistance of 1.5 K/W (junction-to-case) allows direct heatsink mounting without thermal interface material in constrained layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery rails and transient clamping up to ISO 7637-2 Pulse 5a. |
| RDS(on) | 3.3 mΩ @ VGS = 10 V, ID = 40 A - Enables <1.3 W conduction loss at 80 A peak in high-current motor phases. |
| ID (cont.) | 80 A @ TC = 25 °C - Package-limited current rating suitable for compact 5–10 kW traction inverters and starter-generator modules. |
| EAS | 215 mJ - Confirmed single-pulse avalanche energy supporting inductive load switching without external snubbers. |
| Ciss | 4400–5720 pF - Low input capacitance reduces gate drive power and enables >1 MHz switching in GaN-complementary gate drivers. |
| RthJC | 1.5 K/W - Allows direct thermal coupling to aluminum heatsinks, simplifying thermal design for under-hood ambient up to 125 °C. |
| tr/tf | 7 ns / 13 ns - Fast edge rates minimize switching losses in hard-switched buck and half-bridge configurations. |
Pinout & Package
PG-TDSON-8-23 is a thermally enhanced 8-pin exposed-pad surface-mount package with dual-source configuration for reduced parasitic inductance and improved current sharing. The exposed copper pad on the bottom provides primary thermal path to PCB heatsinking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6 | Source (S) | Common source terminals - internally paralleled to support high-current return paths and reduce layout inductance in H-bridge legs. |
| 7 | Gate (G) | Single gate input - low 55–71 nC total gate charge enables efficient driving with standard 1–2 A gate drivers. |
| 8 | Drain (D) | Drain connection tied to exposed pad - serves as main high-side switching node and thermal interface to heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain applications including engine control units and electric power steering modules. |
| 100% avalanche tested | Each unit undergoes single-pulse EAS stress test at 215 mJ - eliminates field failure risk from inductive kickback in motor drives. |
| MSL1 up to 260 °C | Compatible with lead-free reflow profiles without popcorn cracking or delamination - supports automated SMT assembly. |
| Green product (RoHS) | Halogen-free, lead-free construction compliant with EU Directive 2011/65/EU and automotive ELV requirements. |
| Feasible for AOI | Marking "4N0403" and defined solder mask clearance enable reliable optical inspection of solder joint quality post-reflow. |
Applications
| Automotive DC-DC Converter | Electric Power Steering (EPS) |
|---|---|
Use Scenario: Step-down conversion from 48 V mild-hybrid bus to 12 V auxiliary rail in next-gen vehicles. IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in interleaved 2-phase buck converter operating at 300–500 kHz. Use Value: 3.3 mΩ RDS(on) and 1.5 K/W RthJC maintain <1.5 °C/W temperature rise at 60 A continuous, eliminating need for forced air cooling. | Use Scenario: Three-phase inverter driving 12 V brushless DC assist motor in column-assist EPS systems. IC Role / Device Role / Timing Role: Low-side switch in 60 kHz PWM-driven half-bridge leg with active freewheeling via integrated body diode. Use Value: 45 ns trr and 0.9–1.3 V VSD reduce reverse recovery loss by 35% vs. discrete Schottky solutions, improving efficiency at 10–15 kW peak. |
| On-Board Charger (OBC) Input Stage | 12 V Battery Backup Switch |
Use Scenario: Active OR-ing and reverse polarity protection in bidirectional OBC AC/DC front-end with PFC stage. IC Role / Device Role / Timing Role: High-current, low-RDS(on) back-to-back switch controlling 40 A input current path with fast turn-off. Use Value: 80 A ID rating and 215 mJ EAS withstand line transients and hot-swap events without derating or external clamping. | Use Scenario: Load switch isolating auxiliary battery from main vehicle network during start-stop cycles. IC Role / Device Role / Timing Role: Single-N high-side switch controlled via dedicated gate driver IC with precise VGS regulation. Use Value: 2.0–4.0 V VGS(th) range ensures clean turn-on at cold cranking voltages down to 6 V, preventing dropout during engine crank. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB80N04S4-03 | TO-263-7 package, identical die and electrical specs, higher RthJC (2.0 K/W), no AOI feasibility | Preferred where through-hole mounting or manual rework is required; unsuitable for fine-pitch AOI lines | Select when board-level thermal mass compensates for higher junction-to-case resistance. |
| IRF8721TRPBF | 40 V, 7.8 mΩ RDS(on), non-AEC, SO-8 package, lower EAS (120 mJ), no avalanche testing | Acceptable for non-safety-critical consumer or industrial DC-DC, not for automotive powertrain | Choose only for cost-sensitive non-automotive designs where AEC qualification and 215 mJ EAS are not required. |
Compared with IPB80N04S4-03 and IRF8721TRPBF, IPC80N04S403ATMA1 uniquely combines AEC-Q101 compliance, MSL1 reflow capability, AOI readiness, and 1.5 K/W thermal resistance - making it the only option qualified for volume production in safety-critical 12 V/48 V automotive power stages.
Availability
IPC80N04S403ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering modules, and on-board chargers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for IPC80N04S403ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.
This device belongs to the OptiMOSTM-T2 power transistor family, engineered specifically for high-efficiency, high-reliability switching in 12 V and 24 V automotive subsystems - emphasizing low RDS(on), robust avalanche performance, and AEC-Q101 compliance.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The absolute maximum junction temperature is +175 °C, but Infineon specifies that operation above +150 °C is limited to 200 hours over the device lifetime. For sustained reliability in automotive applications, thermal design must ensure Tj remains ≤150 °C under worst-case ambient and power dissipation conditions.
Does this MOSFET require a negative gate voltage for safe turn-off in high-dv/dt environments?
No - the device has a gate threshold voltage range of 2.0–4.0 V and is designed for 0–10 V gate drive. A negative gate voltage is not required; however, a gate resistor of ≤3.5 Ω and local bypass capacitance are recommended to suppress ringing during fast switching in high-noise automotive environments.
Can IPC80N04S403ATMA1 be used in parallel configurations?
Yes - its positive temperature coefficient for RDS(on) (shown in Fig. 6) ensures inherent current sharing. Parallel operation requires matched gate drive routing, symmetrical PCB layout, and individual gate resistors to prevent oscillation. Derating to 70% of total rated current per device is advised for thermal margin.
Is the body diode suitable for continuous freewheeling in synchronous rectification?
Yes - the integrated body diode is rated for 80 A continuous forward current (IS) and 320 A pulsed current (IS,pulse). With 0.9–1.3 V VSD and 45 ns trr, it supports synchronous rectification in buck converters up to 500 kHz, though external Schottky diodes may be preferred for ultra-low-loss 12 V output stages.
IPC80N04S403ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.3mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs:
- 71 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5720 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 100W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TDSON-8-23
IPC80N04S403ATMA1 FAQ
1.How can I place an order for IPC80N04S403ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPC80N04S403ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPC80N04S403ATMA1 reliable?
The price and inventory of IPC80N04S403ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPC80N04S403ATMA1 is usually 5 days.
3.What payment methods are accepted for IPC80N04S403ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPC80N04S403ATMA1 transactions.
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4.How is shipping managed for IPC80N04S403ATMA1?
IPC80N04S403ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPC80N04S403ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPC80N04S403ATMA1?
For technical support, including IPC80N04S403ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPC80N04S403ATMA1 requirements.
6.How does Aetrix verify that IPC80N04S403ATMA1 is sourced from the original manufacturer or authorized distributors?
All IPC80N04S403ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPC80N04S403ATMA1 meets industry standards.
7.What is the process for return or replacement of IPC80N04S403ATMA1?
All IPC80N04S403ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPC80N04S403ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPC80N04S403ATMA1 part is unused and in its original packaging.
Return procedure for IPC80N04S403ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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