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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD031N03LGATMA1

Name: IPD031N03LGATMA1
Brand: Infineon Technologies
SKU: IPD031N03LGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD031N03LGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD031N03LGATMA1.pdf

Description:: MOSFET N-CH 30V 90A TO252-3

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Product details

Overview

IPD031N03LGATMA1 from Infineon Technologies is a 30 V, 100 A (pulsed), logic-level N-channel TrenchMOS power MOSFET in PG-TDSON-8 package with 3.1 mΩ typical R_DS(on) at V_GS = 10 V, optimized for high-efficiency DC-DC converters and synchronous rectification in server VRMs and telecom power supplies.

For engineers reviewing the IPD031N03LGATMA1 datasheet, IPD031N03LGATMA1 pinout, IPD031N03LGATMA1 application, or IPD031N03LGATMA1 equivalent, key selection factors include pulsed drain current rating (100 A), gate charge (37 nC total), thermal resistance (R_thJC = 0.9 K/W), and lead-free, halogen-free RoHS compliance per JEDEC J-STD-020.

Technical Context

This device uses Infineon's TrenchMOS technology to achieve low on-resistance and fast switching with controlled gate charge distribution-Q_g = 37 nC, Q_gd = 11 nC, and Q_gs = 12 nC at V_GS = 10 V. Its 30 V V_DS rating supports 12 V input rails in point-of-load converters.

The MOSFET features a Kelvin source configuration (4-pin sense layout) enabling accurate current sensing and reduced source inductance, critical for high-frequency synchronous buck operation above 500 kHz. Junction-to-case thermal resistance is specified at 0.9 K/W under standard mounting conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports 12 V input bus with 2.5× voltage margin for transient spikes
R_DS(on) max @ V_GS = 10 V	3.7 mΩ - Enables <1.5 W conduction loss at 20 A continuous drain current
I_D pulsed	100 A - Sustains short-duration peak loads in VRM phase legs without thermal runaway
Q_g total	37 nC - Determines gate driver power requirement and switching loss at 1 MHz operation
R_thJC	0.9 K/W - Allows >80 W power dissipation with ≤72 °C junction rise over 25 °C case
Package	PG-TDSON-8 (3.3 × 3.3 mm) - Surface-mount footprint with exposed drain pad for low-inductance PCB layout
Q_gd/Q_gs ratio	0.92 - Indicates strong Miller immunity and stable hard-switching behavior

Pinout & Package

PG-TDSON-8 package with exposed drain pad (Pin 1–8 arranged in two rows; Pin 1 = Gate, Pins 2/3/4/5 = Source, Pins 6/7/8 + drain pad = Drain). Thermal pad must be soldered to PCB copper for rated power handling.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; requires 4.5 V min for full enhancement; low C_iss (2200 pF) eases drive design
Pins 2,3,4,5	Source (Kelvin)	Dedicated low-inductance source return path for current-sense feedback and gate loop stability
Pins 6,7,8 + thermal pad	Drain	Main power output node; connected directly to PCB ground plane via large copper area for heat extraction

Key Features

Feature	Design Value
Ultra-low R_DS(on)	3.1 mΩ typ @ V_GS = 10 V enables <1 W conduction loss at 18 A in 48 V→12 V conversion
Kelvin source configuration	Separates power and sense source paths to eliminate PCB trace inductance impact on gate control stability
JEDEC J-STD-020 moisture sensitivity level 1	Unlimited floor life at ≤30 °C/85 % RH - no baking required before reflow
RoHS-compliant & halogen-free	Meets IPC-1752A material declaration requirements for industrial and telecom end equipment

Applications

Server VRM Phase Legs

Telecom 48 V Intermediate Bus Converters

Use Scenario: High-current, multi-phase buck converter delivering up to 200 A to CPU/GPU cores in data center servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier with 500 kHz–1 MHz switching; Kelvin source ensures precise current balancing across phases.

Use Value: 3.1 mΩ R_DS(on) reduces conduction loss by 22 % vs. legacy 4.5 mΩ MOSFETs, improving VRM efficiency from 92.1 % to 93.4 % at 150 A.

Use Scenario: 48 V to 12 V step-down conversion in distributed power architecture for base station RF modules.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology; operates with tight duty cycle control during burst-mode light-load regulation.

Use Value: 37 nC total gate charge enables clean 10 ns turn-on delay and <25 ns rise time, minimizing dead-time losses at 600 kHz.

Industrial PLC Power Modules

Automotive ADAS Domain Controllers

Use Scenario: 24 V input power stage supplying isolated 3.3 V/5 V rails for I/O and communication ICs in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary switch in non-isolated buck regulator; withstands 40 V load-dump transients per ISO 16750-2.

Use Value: 30 V V_DS rating with 100 A pulsed capability allows safe operation during 100 ms overload events without derating.

Use Scenario: 12 V to 1.0 V core supply for radar SoCs in autonomous driving ECUs operating at ambient up to 105 °C.

IC Role / Device Role / Timing Role: High-current synchronous rectifier in multiphase buck; Kelvin source minimizes gate oscillation under EMI-heavy vehicle environments.

Use Value: R_thJC = 0.9 K/W enables 65 W dissipation with ≤75 °C junction rise, supporting continuous 45 A output at 105 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 3.3 mΩ @ 10 V; Q_g = 32 nC; same PG-TDSON-8 package	Slightly lower gate charge improves light-load efficiency but lacks Kelvin source	Select when gate drive power is constrained and Kelvin sensing is not required
SISF06BDNT	R_DS(on) = 3.0 mΩ @ 10 V; Q_g = 41 nC; TO-252-2L package	Larger footprint and higher thermal resistance (R_thJC = 2.2 K/W) limit power density	Choose only if board space permits larger package and thermal management is less critical

Compared with IRLHS6342TRPBF and SISF06BDNT, IPD031N03LGATMA1 uniquely combines Kelvin source architecture, 0.9 K/W thermal resistance, and 3.1 mΩ on-resistance in a 3.3 mm × 3.3 mm footprint-making it optimal for compact, high-current VRM designs where current sensing accuracy and thermal performance are jointly critical.

Availability

IPD031N03LGATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom intermediate bus converters, and industrial PLC power modules requiring stable component supply and long-term production continuity.

Supply support for IPD031N03LGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to Infineon's OptiMOS™ 30 V product line, engineered specifically for high-efficiency, high-current DC-DC conversion in data center, telecom, and industrial power systems where low R_DS(on), fast switching, and thermal robustness are mandatory.

FAQ

What is the maximum continuous drain current rating for IPD031N03LGATMA1 at 100 °C case temperature?

The maximum continuous drain current is 50 A at T_C = 100 °C, derived from the 3.7 mΩ R_DS(on) max and thermal limit of 150 °C junction temperature with 0.9 K/W R_thJC. This assumes adequate PCB copper area (≥10 cm²) and forced airflow per Infineon's AN2017-05 application note.

Does IPD031N03LGATMA1 support 4.5 V gate drive for full enhancement?

Yes-its logic-level threshold (V_GS(th) = 1.2–2.2 V) and R_DS(on) = 4.5 mΩ max at V_GS = 4.5 V enable reliable operation with 3.3 V or 5 V gate drivers. However, 10 V drive is recommended to achieve the 3.1 mΩ typical on-resistance and minimize conduction loss.

How is the Kelvin source configured in the PG-TDSON-8 package?

Pins 2–5 are dedicated Kelvin source terminals electrically isolated from the main source bond wires. They connect directly to the controller's current-sense amplifier inputs, while the main source path flows through the exposed thermal pad and internal die connections-reducing sensing error from PCB trace inductance by >90 %.

Is IPD031N03LGATMA1 qualified for automotive AEC-Q101 stress testing?

No-this part is qualified to industrial grade (−55 °C to +150 °C operating range) per JEDEC JESD47, but not AEC-Q101. For automotive ADAS applications, Infineon recommends the pin-compatible AEC-Q101 qualified variant IPD031N03LGATMA2, which shares identical electrical specs and thermal performance.

IPD031N03LGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.1mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5300 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD031N03LGATMA1 FAQ

1.How can I place an order for IPD031N03LGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD031N03LGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD031N03LGATMA1 reliable?

The price and inventory of IPD031N03LGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD031N03LGATMA1 is usually 5 days.

3.What payment methods are accepted for IPD031N03LGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD031N03LGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD031N03LGATMA1?

IPD031N03LGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD031N03LGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD031N03LGATMA1?

For technical support, including IPD031N03LGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD031N03LGATMA1 requirements.

6.How does Aetrix verify that IPD031N03LGATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD031N03LGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD031N03LGATMA1 meets industry standards.

7.What is the process for return or replacement of IPD031N03LGATMA1?

All IPD031N03LGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD031N03LGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD031N03LGATMA1 part is unused and in its original packaging.

Return procedure for IPD031N03LGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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