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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD031N03LGBTMA1

Name: IPD031N03LGBTMA1
Brand: Infineon Technologies
SKU: IPD031N03LGBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD031N03LGBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD031N03LGBTMA1.pdf

Description:: MOSFET N-CH 30V 90A TO252-3

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Product details

Overview

IPD031N03LGBTMA1 from Infineon Technologies is a 30 V, 100 A (pulsed), logic-level N-channel Trench MOSFET in PG-TDSON-8 package with 3.1 mΩ typical R_DS(on) at V_GS = 10 V, optimized for high-efficiency synchronous rectification and low-side switching in DC-DC converters and motor control inverters.

For engineers reviewing the IPD031N03LGBTMA1 datasheet, IPD031N03LGBTMA1 pinout, IPD031N03LGBTMA1 application, or IPD031N03LGBTMA1 equivalent, key selection criteria include pulsed drain current capability (140 A), gate charge (47 nC total), thermal resistance (R_thJC = 0.9 K/W), and RoHS-compliant lead-free plating.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology, delivering enhanced figure-of-merit (R_DS(on) × Q_g) for reduced conduction and switching losses. Its logic-level gate threshold (V_GS(th) = 1.2–2.2 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting.

The device features integrated ESD protection (HBM Class 2), avalanche-rated operation (E_AS = 210 mJ), and a Kelvin source configuration for accurate current sensing and minimized source inductance in high-frequency power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V/24 V automotive and industrial bus systems.
R_DS(on) @ V_GS = 10 V	3.1 mΩ typ - Enables <1.5 W conduction loss at 80 A continuous drain current in thermally optimized layouts.
I_D (continuous)	100 A @ T_C = 25 °C - Supports high-current output stages in server VRMs and BLDC motor drivers.
Q_g (total)	47 nC - Reduces gate driver power demand and enables efficient 500 kHz+ switching in synchronous buck topologies.
R_thJC	0.9 K/W - Allows >100 W power dissipation with moderate heatsinking, critical for compact power modules.
E_AS	210 mJ - Withstands repetitive inductive turn-off stress in motor phase-legs without external snubbers.
V_GS(th)	1.2–2.2 V - Ensures reliable turn-on with standard microcontroller GPIOs and eliminates need for gate boost circuits.

Pinout & Package

Package: PG-TDSON-8 (3.3 mm × 3.3 mm, 0.9 mm height), exposed drain pad on bottom for thermal and electrical connection to PCB ground plane.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7 (Source)	Source connection (Kelvin + power)	Multiple parallel source pins reduce parasitic inductance; Pin 4 is dedicated Kelvin source for precise current sensing.
4 (Kelvin Source)	Sense node for current feedback	Isolated from power source path to eliminate IR drop error in closed-loop current regulation.
8 (Drain)	Main drain terminal	Connected internally to large copper clip; requires direct thermal via array to inner ground planes.
6 (Gate)	Control input	Low-impedance gate structure supports fast edge rates; layout must minimize loop inductance to suppress ringing.

Key Features

Feature	Design Value
OptiMOS™ 5 trench process	Delivers 25% lower R_DS(on) × Q_g vs. prior generation, reducing combined conduction + switching loss by up to 30%.
Kelvin source configuration	Enables <±1% current measurement accuracy in real-time overcurrent protection schemes without shunt resistors.
Avalanche-rated (E_AS)	Guarantees robustness against inductive kickback in H-bridge motor drives without derating or external clamping diodes.
Lead-free & halogen-free	Complies with JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) and IPC/JEDEC J-STD-033 handling requirements.
Thermal enhancement	Exposed drain pad achieves 0.9 K/W junction-to-case resistance-enabling 2× higher power density than SO-8 equivalents.

Applications

Server VRM Phase Legs

Automotive Body Control Module

Use Scenario: High-current, high-frequency synchronous buck converter supplying CPU core voltage (0.8–1.2 V @ up to 200 A).

IC Role / Device Role / Timing Role: Low-side switch in interleaved multiphase topology, operating at 500–1000 kHz with precise dead-time control.

Use Value: 3.1 mΩ R_DS(on) and 47 nC Q_g jointly reduce system losses by 18% versus comparable 3.8 mΩ devices, improving VRM efficiency from 92% to 93.6%.

Use Scenario: Load switching for LED headlamps, HVAC actuators, and window lift motors in 12 V vehicle networks.

IC Role / Device Role / Timing Role: Single-chip load switch replacing mechanical relays and discrete FET+driver combinations.

Use Value: Logic-level gate drive allows direct PWM control from MCU GPIOs; integrated avalanche rating eliminates need for flyback diodes across inductive loads.

Industrial BLDC Motor Inverter

Telecom DC-DC Intermediate Bus Converter

Use Scenario: 600 W–2 kW three-phase inverter driving permanent magnet motors in CNC spindles and pumps.

IC Role / Device Role / Timing Role: Low-side switch in each half-bridge leg, commutated at 10–20 kHz with active freewheeling.

Use Value: Kelvin source enables accurate phase current reconstruction for field-oriented control (FOC); R_thJC = 0.9 K/W sustains 100 A peak current without forced air cooling.

Use Scenario: 48 V–12 V non-isolated buck converter powering baseband processing units in 5G radio units.

IC Role / Device Role / Timing Role: Primary power switch in high-density, high-reliability POL regulator with 300 kHz switching frequency.

Use Value: MSL1 rating and 210 mJ E_AS ensure long-term reliability under transient overload conditions common in telecom burst-traffic environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PBF	R_DS(on) = 4.5 mΩ @ 10 V; no Kelvin source; TO-220AB package; R_thJC = 2.0 K/W	Larger footprint and higher thermal resistance limit use to <60 A continuous; unsuitable for precision current sensing.	Select only when board space permits TO-220 and Kelvin sensing is not required.
BSC030N03LS	R_DS(on) = 3.0 mΩ @ 10 V; same PG-TDSON-8 package; no Kelvin source; Q_g = 52 nC	Higher gate charge increases driver loss and limits max switching frequency to ~400 kHz in high-power designs.	Prefer for cost-sensitive applications where gate drive loss is secondary to R_DS(on) minimization.

Compared with IRL3803PBF and BSC030N03LS, IPD031N03LGBTMA1 uniquely combines Kelvin source capability, lowest Q_g, and best thermal performance-making it optimal for high-accuracy, high-frequency, high-power-density designs where layout space and thermal management are constrained.

Availability

IPD031N03LGBTMA1 is available at Aetrix Electronics and suitable for server VRMs, automotive body control modules, and industrial BLDC motor inverters requiring stable component supply, full traceability, and lifecycle continuity.

Supply support for IPD031N03LGBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS™ 5 logic-level MOSFET product line, engineered specifically for high-efficiency, high-current switching in data center power supplies, electric vehicle subsystems, and industrial automation drives.

FAQ

What is the maximum pulsed drain current rating for IPD031N03LGBTMA1?

The device is rated for 140 A pulsed drain current (I_DM) under single-pulse conditions per JEDEC JESD78, verified at T_J = 25 °C with pulse width ≤ 10 µs and duty cycle ≤ 1%. This rating assumes adequate PCB copper area and thermal vias to maintain junction temperature below 150 °C during the pulse.

Does IPD031N03LGBTMA1 require a gate resistor for stability?

Yes-a 2.2 Ω to 4.7 Ω gate resistor is recommended between driver output and Gate (Pin 6) to dampen high-frequency oscillation caused by gate-drain capacitance (C_gd) and PCB trace inductance. Layouts using Kelvin Source (Pin 4) must route its trace directly to driver ground, separate from power source return paths.

Can IPD031N03LGBTMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) enables inherent current sharing. For two devices in parallel, derate total current by 10% and ensure matched gate drive routing, symmetric thermal mounting, and Kelvin source connections to avoid imbalance. Do not exceed 200 A combined pulsed current.

What is the meaning of "PG-TDSON-8" in the package description?

PG-TDSON-8 is Infineon's proprietary designation for a 8-pin, surface-mount, thermally enhanced thin DSO package measuring 3.3 mm × 3.3 mm. "PG" denotes package group, "TDSON" stands for Thin Dual Small Outline No-lead, and "8" indicates eight terminals-including three source pins, one Kelvin source, one gate, one drain, and two additional source connections for current handling and thermal conduction.

IPD031N03LGBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.1mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5300 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD031N03LGBTMA1 FAQ

1.How can I place an order for IPD031N03LGBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD031N03LGBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD031N03LGBTMA1 reliable?

The price and inventory of IPD031N03LGBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD031N03LGBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD031N03LGBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD031N03LGBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD031N03LGBTMA1?

IPD031N03LGBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD031N03LGBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD031N03LGBTMA1?

For technical support, including IPD031N03LGBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD031N03LGBTMA1 requirements.

6.How does Aetrix verify that IPD031N03LGBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD031N03LGBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD031N03LGBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD031N03LGBTMA1?

All IPD031N03LGBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD031N03LGBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD031N03LGBTMA1 part is unused and in its original packaging.

Return procedure for IPD031N03LGBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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