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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD031N03M G

Name: IPD031N03M G
Brand: Infineon Technologies
SKU: IPD031N03M G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD031N03M G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD031N03M G.pdf

Description:: MOSFET N-CH 30V 90A TO252-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPD031N03M G from Infineon Technologies is a 30 V, 100 A (pulsed), logic-level N-channel Trench MOSFET in PG-TDSON-8 package with 3.1 mΩ typical R_DS(on) at V_GS = 10 V, optimized for high-efficiency synchronous rectification and DC-DC power stages in server VRMs and telecom POL converters.

For engineers reviewing the IPD031N03M G datasheet, IPD031N03M G pinout, IPD031N03M G application, or IPD031N03M G equivalent, key selection criteria include pulsed drain current rating (140 A), gate charge (49 nC total), low gate threshold (1.7 V), thermal resistance (0.9 K/W junction-to-case), and RoHS-compliant lead-free plating.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology with trench-gate structure and split-gate cell design to achieve ultra-low on-resistance while maintaining fast switching speed and robust avalanche capability. It supports synchronous buck topologies with gate drive voltages down to 4.5 V.

The device features a Kelvin source configuration (pins 1–3 and 7–8 tied internally) to minimize source inductance impact on switching loss, and its SO-8 exposed-pad package enables direct thermal coupling to PCB copper for high-current operation without external heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
R_DS(on) max @ V_GS = 10 V	3.7 mΩ - Enables ≤1.5 W conduction loss at 60 A continuous drain current in 48 V input POL stages.
Q_g total	49 nC - Supports efficient 500 kHz–1 MHz switching with standard gate drivers (e.g., IR35201, UCC27531).
I_D pulsed	140 A - Sustains short-circuit events and transient load steps in server CPU VRMs without thermal runaway.
V_GS(th)	1.2–2.2 V - Ensures full enhancement with 3.3 V or 5 V logic-level gate drive, eliminating level-shifters.
R_θJC	0.9 K/W - Allows >80 W power dissipation with 50°C case temperature rise using 2 oz copper + thermal vias.
E_oss	32 nJ @ 12 V - Reduces turn-off energy loss in hard-switched synchronous rectifiers.
Q_rr	42 nC - Minimizes reverse recovery loss during body diode commutation in buck converters.

Pinout & Package

Package: PG-TDSON-8 (SO-8 variant with exposed thermal pad, 5 mm × 6 mm footprint, 1.0 mm height). Thermal pad must be soldered to PCB ground plane for rated current performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 7, 8	Source (Kelvin-connected)	Low-inductance return path for power source; pins 1–3 and 7–8 are internally paralleled for reduced layout loop inductance.
4, 5, 6	Drain	Main current path to input bus; electrically connected to exposed thermal pad for simultaneous conduction and heat transfer.
9 (exposed pad)	Thermal pad / Drain	Primary thermal interface to PCB; must be soldered to ≥200 mm² of inner-layer copper for R_θJA ≤ 45 K/W.
10	Gate	Control terminal requiring <1.5 V overdrive for full enhancement; sensitive to ESD (HBM 2 kV).

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g figure of merit	153 mΩ·nC - Delivers highest efficiency in 48 V–12 V step-down converters operating above 300 kHz.
100% avalanche-rated	Rated for repetitive unclamped inductive switching (UIS) up to 100 mJ - eliminates need for external snubbers in VRM phase legs.
Lead-free and RoHS-compliant plating	Matte tin (Sn) over nickel on all terminals - compatible with Pb-free reflow profiles (peak 260°C) and avoids tin whisker risk.
Enhanced gate oxide reliability	Qualified to 1000 V HBM ESD and withstands >10⁶ gate cycles under 12 V stress - ensures long-term stability in hot-plug applications.

Applications

Server Voltage Regulator Modules

Telecom Point-of-Load Converters

Use Scenario: High-density 48 V–0.8 V VRM supplying AMD EPYC or Intel Xeon CPUs with 500+ A peak current.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter; switches at 500–1000 kHz with dead-time control.

Use Value: 3.1 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 4.5 mΩ MOSFETs, enabling 95%+ full-load efficiency at 50 A/phase.

Use Scenario: 48 V–12 V intermediate bus converter in 5G base station power shelves with strict thermal limits.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward topology; handles 100 A pulsed drain current during burst-mode operation.

Use Value: 140 A pulsed rating sustains 2× peak load surges without derating; Kelvin source minimizes gate oscillation during fast dI/dt transitions.

Industrial Motor Drive Half-Bridges

Automotive DC-DC Converters

Use Scenario: 24 V–48 V motor control in AGV traction inverters requiring compact, air-cooled designs.

IC Role / Device Role / Timing Role: High-current half-bridge leg switch; operated with 100 ns dead time to prevent shoot-through.

Use Value: 0.9 K/W R_θJC allows 85 W dissipation at 70°C case temperature - eliminates need for forced-air cooling in IP65 enclosures.

Use Scenario: 48 V–12 V bidirectional DC-DC in mild-hybrid vehicles (e.g., 48 V starter-generator systems).

IC Role / Device Role / Timing Role: Isolated synchronous rectifier in dual-active-bridge topology; subjected to 1000 V transients per ISO 7637-2.

Use Value: 100% UIS-rated avalanche capability absorbs load-dump energy without clamping diodes, reducing BOM count by two components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	R_DS(on) = 2.2 mΩ @ 10 V, Q_g = 62 nC, SO-8FL package with smaller thermal pad (4.2 mm × 4.2 mm)	Higher conduction loss but lower gate drive power; limited to ≤70 A continuous due to higher R_θJC (1.3 K/W)	Prefer when gate driver supply is constrained (<1 W available) and peak current ≤90 A.
ON Semiconductor NTMFS5C673NL	R_DS(on) = 3.4 mΩ @ 10 V, Q_g = 42 nC, PowerTDFN 5×6 package with 0.75 mm height	Lower profile enables ultra-thin VRMs; no Kelvin source, so layout-sensitive to source inductance	Choose for space-constrained telecom modules where board height <1.2 mm is mandatory.

Compared with STL220N3LLH6 and NTMFS5C673NL, IPD031N03M G delivers the best balance of low R_DS(on), moderate Q_g, and proven Kelvin-source layout robustness-making it optimal for high-reliability, high-current server and industrial power stages where thermal margin and switching stability are critical.

Availability

IPD031N03M G is available at Aetrix Electronics and suitable for server voltage regulator modules, telecom point-of-load converters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IPD031N03M G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and RF solutions, with global manufacturing and R&D centers in Europe, Asia, and the Americas.

This part belongs to the OptiMOS™ 3 family, engineered specifically for high-frequency, high-current DC-DC conversion in datacenter, telecom, and industrial power supplies where efficiency, thermal performance, and reliability are non-negotiable.

FAQ

What is the maximum continuous drain current for IPD031N03M G at 100°C case temperature?

The maximum continuous drain current is 60 A at T_C = 100°C, based on thermal derating from the 100 A rating at T_C = 25°C and R_DS(on) temperature coefficient of +0.65%/°C. This assumes proper PCB copper area (≥400 mm²) and thermal via density (≥9 vias, 0.3 mm diameter) under the exposed pad.

Does IPD031N03M G support 3.3 V gate drive in logic-level applications?

Yes - with a guaranteed V_GS(th) range of 1.2–2.2 V and R_DS(on) = 4.8 mΩ max at V_GS = 4.5 V, the device achieves full enhancement using 3.3 V logic outputs. However, gate drive strength must exceed 2 A peak to ensure <20 ns turn-on delay in high-dI/dt applications.

How is the Kelvin source configuration implemented in the PG-TDSON-8 package?

Pins 1–3 and 7–8 are internally bonded to separate source metallization layers: one for power return (pins 4–6 and exposed pad), the other for gate driver reference (pins 1–3, 7–8). This separates high-current source paths from gate loop impedance, reducing voltage spikes during switching transitions.

What is the recommended PCB layout for thermal management of IPD031N03M G?

Use ≥200 mm² of 2 oz copper on the primary layer connected to the exposed thermal pad via ≥12 thermal vias (0.3 mm diameter, 0.8 mm pitch). Connect inner-layer copper planes (at least two) with ≥25 additional vias to form a vertical thermal stack. Avoid placing signal traces under the device footprint.

IPD031N03M G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.1mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5300 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD031N03M G FAQ

1.How can I place an order for IPD031N03M G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD031N03M G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD031N03M G reliable?

The price and inventory of IPD031N03M G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD031N03M G is usually 5 days.

3.What payment methods are accepted for IPD031N03M G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD031N03M G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD031N03M G?

IPD031N03M G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD031N03M G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD031N03M G?

For technical support, including IPD031N03M G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD031N03M G requirements.

6.How does Aetrix verify that IPD031N03M G is sourced from the original manufacturer or authorized distributors?

All IPD031N03M G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD031N03M G meets industry standards.

7.What is the process for return or replacement of IPD031N03M G?

All IPD031N03M G units undergo pre-shipment inspection (PSI). If there is an issue with IPD031N03M G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD031N03M G part is unused and in its original packaging.

Return procedure for IPD031N03M G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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