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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD035N06L3GATMA1

Name: IPD035N06L3GATMA1
Brand: Infineon Technologies
SKU: IPD035N06L3GATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD035N06L3GATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD035N06L3GATMA1.pdf

Description:: MOSFET N-CH 60V 90A TO252-3

Quantity:: RFQ Add To RFQ list

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Inventory:7,430

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Product details

Overview

IPD035N06L3GATMA1 from Infineon Technologies is a 60 V, 3.5 mΩ N-channel Trench MOSFET in PG-TDSON-8 package, optimized for high-efficiency DC-DC converters and synchronous rectification. It features 100 A continuous drain current (T_C = 25 °C), 170 A pulsed drain current, and gate threshold voltage of 2.0–3.0 V.

For engineers reviewing the IPD035N06L3GATMA1 datasheet, IPD035N06L3GATMA1 pinout, IPD035N06L3GATMA1 application, or IPD035N06L3GATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V and 10 V gate drive, thermal resistance (R_thJC = 0.9 K/W), SOA compliance, and avalanche-rated ruggedness for hard-switching topologies.

Technical Context

This MOSFET uses Infineon's OptiMOS™ 3 technology with trench-gate process and optimized cell layout to minimize conduction and switching losses simultaneously. Its low gate charge (Q_g = 42 nC at V_GS = 10 V) and low output charge (Q_oss = 120 nC) support high-frequency operation up to 1 MHz in buck converters.

The device is fully characterized for unclamped inductive switching (UIS) with single-pulse avalanche energy rating of 530 mJ, and qualified per AEC-Q101 for automotive-grade reliability. Its drain-source breakdown voltage is rated at 60 V with zero-temperature-coefficient R_DS(on) behavior above 100 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage before avalanche onset; supports 48 V bus systems with 20 % margin.
R_DS(on) max @ V_GS = 10 V	3.5 mΩ - Enables <1 W conduction loss at 100 A DC, critical for high-current point-of-load stages.
I_D cont @ T_C = 25 °C	100 A - Continuous current capability under ideal heatsink conditions; derates to 65 A at T_C = 100 °C.
Q_g	42 nC - Total gate charge determines driver strength requirement; enables fast turn-on with ≤1 A peak gate current.
E_AS	530 mJ - Single-pulse avalanche energy rating ensures robustness against inductive load transients without external snubbers.
R_thJC	0.9 K/W - Junction-to-case thermal resistance enables efficient heat transfer to PCB copper or heatsink in compact layouts.
V_GS(th)	2.0–3.0 V - Gate threshold range ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers.

Pinout & Package

IPD035N06L3GATMA1 is housed in PG-TDSON-8 (exposed drain pad), a thermally enhanced surface-mount package with 5 mm × 6 mm footprint and 0.95 mm height. The exposed drain pad occupies >80 % of the bottom area and must be soldered to a large copper pour for optimal thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Drain (D)	Internally connected to exposed metal pad; primary current path and thermal conduction path to PCB.
4	Gate (G)	Control terminal; requires low-inductance routing and local 10 nF gate-to-source decoupling.
8	Source (S)	Reference node for gate drive; connects to power ground plane with minimal loop inductance.

Key Features

Feature	Design Value
Optimized for 4.5 V drive	R_DS(on) = 4.8 mΩ at V_GS = 4.5 V - Enables direct interface with 5 V microcontrollers and PWM controllers without level-shifting.
Avalanche-rated (UIS)	Rated for repetitive unclamped inductive switching - eliminates need for external clamping diodes in flyback or boost converters.
Thermally enhanced package	PG-TDSON-8 with 2.5× larger copper area than SO-8 - reduces junction temperature rise by ≥15 °C vs. legacy packages at same power dissipation.
Lead-free and RoHS-compliant	Meets JEDEC J-STD-020 moisture sensitivity level 1 - allows standard reflow without baking or special handling.

Applications

Server VRM

Automotive ADAS ECU

Use Scenario: High-current, high-frequency buck converter supplying core voltage to Xeon or EPYC CPUs.

IC Role / Device Role / Timing Role: Synchronous rectifier in 2-phase or 3-phase multiphase controller topology.

Use Value: 3.5 mΩ R_DS(on) and 42 nC Q_g reduce total power loss by 18 % vs. prior-gen 5 mΩ devices at 1 MHz switching.

Use Scenario: Power supply for radar processing unit requiring stable 1.2 V/60 A output with automotive temperature range.

IC Role / Device Role / Timing Role: Low-side switch in dual-phase buck regulator with AEC-Q101 qualification.

Use Value: 530 mJ UIS rating and -55 to +175 °C operating range ensure fault tolerance during cold-crank and load-dump events.

Industrial PLC I/O Module

Telecom Base Station PSU

Use Scenario: 24 V input to 5 V/20 A isolated DC-DC stage powering digital I/O banks.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology.

Use Value: 0.9 K/W R_thJC enables full 20 A load without forced air cooling in sealed enclosures.

Use Scenario: 48 V intermediate bus converter delivering 12 V/40 A to RF power amplifiers.

IC Role / Device Role / Timing Role: Primary-side high-side switch in phase-shifted full-bridge configuration.

Use Value: 60 V V_DS rating provides 30 % overvoltage margin on 48 V telecom bus, reducing risk of field failures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7AG	R_DS(on) = 3.2 mΩ @ 10 V, Q_g = 54 nC, R_thJC = 1.1 K/W	Slightly lower R_DS(on) but higher gate charge increases switching loss at >500 kHz	Prefer for lower conduction-loss priority in <300 kHz designs with adequate gate drive.
IRF7470PBF	R_DS(on) = 4.0 mΩ @ 10 V, Q_g = 36 nC, non-automotive grade, R_thJC = 1.3 K/W	Lacks AEC-Q101 qualification and avalanche rating; lower thermal performance	Acceptable only for cost-sensitive industrial applications with derated current and no transient stress.

Compared with STL220N6F7AG and IRF7470PBF, IPD035N06L3GATMA1 delivers best-in-class balance of low R_DS(on), moderate Q_g, and automotive-grade ruggedness-making it optimal for high-reliability, high-frequency DC-DC converters where both efficiency and robustness are mandatory.

Availability

IPD035N06L3GATMA1 is available at Aetrix Electronics and suitable for server VRMs, automotive ADAS ECUs, and industrial PLC I/O modules requiring stable component supply across multi-year production cycles.

Supply support for IPD035N06L3GATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™ 3 family, designed specifically for high-efficiency, high-current DC-DC conversion in computing, automotive, and telecom infrastructure where low R_DS(on) and fast switching are essential.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C. For reliable long-term operation, Infineon recommends limiting T_j to ≤150 °C under steady-state conditions. Derating curves in the datasheet show that at T_C = 100 °C, the device supports 65 A continuous drain current, assuming proper PCB copper area and thermal vias beneath the exposed drain pad.

Is IPD035N06L3GATMA1 suitable for paralleling multiple devices?

Yes-its positive temperature coefficient of R_DS(on) ensures inherent current sharing when paralleled. Layout symmetry is critical: matched gate trace lengths, individual gate resistors (≤5 Ω), and shared source connection via star grounding. Thermal coupling between devices must be minimized using separate thermal pads or spaced placement to avoid localized hot spots.

Does this MOSFET require a gate resistor for stability in hard-switching applications?

Yes-a gate resistor (typically 2–10 Ω) is required to dampen gate ringing caused by parasitic inductance and Miller capacitance. Without it, overshoot exceeding 20 V can trigger spurious turn-on or oscillation. The recommended value balances switching speed (lower R_g) and EMI/noise suppression (higher R_g), verified in Infineon's application note AN2015-04 for TDSON-8 layouts.

Can IPD035N06L3GATMA1 be used in linear-mode (saturation) operation?

No-it is not characterized or qualified for linear-mode operation. Its Safe Operating Area (SOA) curve is defined only for pulse widths ≤10 ms and does not extend into DC or long-duration linear regions. Attempting linear regulation risks thermal runaway due to negative thermal feedback in the channel, especially above V_DS > 10 V and I_D > 5 A.

IPD035N06L3GATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 93µA

Gate Charge (Qg) (Max) @ Vgs:: 79 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD035N06L3GATMA1 FAQ

1.How can I place an order for IPD035N06L3GATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD035N06L3GATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD035N06L3GATMA1 reliable?

The price and inventory of IPD035N06L3GATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD035N06L3GATMA1 is usually 5 days.

3.What payment methods are accepted for IPD035N06L3GATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD035N06L3GATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD035N06L3GATMA1?

IPD035N06L3GATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD035N06L3GATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD035N06L3GATMA1?

For technical support, including IPD035N06L3GATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD035N06L3GATMA1 requirements.

6.How does Aetrix verify that IPD035N06L3GATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD035N06L3GATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD035N06L3GATMA1 meets industry standards.

7.What is the process for return or replacement of IPD035N06L3GATMA1?

All IPD035N06L3GATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD035N06L3GATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD035N06L3GATMA1 part is unused and in its original packaging.

Return procedure for IPD035N06L3GATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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