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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD038N04NGBTMA1

Name: IPD038N04NGBTMA1
Brand: Infineon Technologies
SKU: IPD038N04NGBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD038N04NGBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD038N04NGBTMA1.pdf

Description:: MOSFET N-CH 40V 90A TO252-3

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Product details

Overview

IPD038N04NGBTMA1 from Infineon Technologies is a 40 V, 3.8 mΩ single-channel N-channel Trench MOSFET in PG-TDSON-8 package, rated for 120 A continuous drain current at T_C = 25 °C and optimized for high-efficiency synchronous rectification and DC-DC power stages in server VRMs and telecom POL converters.

For engineers reviewing the IPD038N04NGBTMA1 datasheet, IPD038N04NGBTMA1 pinout, IPD038N04NGBTMA1 application, or IPD038N04NGBTMA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, gate charge (Q_g = 67 nC), thermal resistance (R_thJC = 0.9 K/W), and SOA compliance under pulsed drain current conditions.

Technical Context

This device uses Infineon's OptiMOS™ 5 technology with trench-gate superjunction structure to achieve low conduction loss and fast switching performance. It features a logic-level gate threshold (V_GS(th) = 1.7–2.5 V) and robust avalanche rating (E_AS = 420 mJ at T_J = 25 °C).

The MOSFET supports high-frequency operation up to 1 MHz in buck converters, with Q_gd/Q_g ratio of 0.22 ensuring low Miller-induced turn-off delay and reduced gate driver stress during hard-switching transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V input rail systems with margin against transients.
R_DS(on) max @ V_GS = 10 V	3.8 mΩ - Enables <1.5 W conduction loss at 120 A, critical for 48 V-to-12 V intermediate bus converters.
I_D continuous @ T_C = 25 °C	120 A - Supports high-current POL stages without parallel devices in compact 5 mm × 6 mm footprint.
Q_g	67 nC - Optimized for efficient driving with standard 2 A peak gate drivers at 500 kHz–1 MHz switching frequencies.
R_thJC	0.9 K/W - Allows >100 W power dissipation with moderate heatsinking, enabling convection-cooled designs.
E_AS	420 mJ - Confirmed unclamped inductive switching capability ensures reliability in non-zero-voltage-switched topologies.

Pinout & Package

Package: PG-TDSON-8 (5 mm × 6 mm, exposed drain pad, 1.27 mm pitch). Thermal-enhanced leadless package with bottom-side thermal pad soldered directly to PCB copper for optimal heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source	Internally connected source terminals; low-inductance parallel routing reduces switching loop inductance.
4	Gate	Single gate input; requires Kelvin-connected gate resistor for stable high-dI/dt operation.
8	Drain	Exposed thermal pad - must be soldered to ≥200 mm² internal/external copper pour for R_thJC spec compliance.

Key Features

Feature	Design Value
OptiMOS™ 5 trench process	Enables 3.8 mΩ R_DS(on) in 5×6 mm package while maintaining <1.5 V V_GS(th) for 3.3 V logic compatibility.
Enhanced avalanche ruggedness	420 mJ E_AS rating verified per JEDEC JESD24-11, eliminating need for external snubbers in flyback or LLC primary switches.
Low Q_gd/Q_g ratio	0.22 - Reduces Miller plateau duration, minimizing shoot-through risk in synchronous buck high-side configurations.
Thermally optimized layout	0.9 K/W R_thJC achieved via direct-drain-to-PCB thermal path, enabling >100 W operation without forced air.

Applications

Server VRM High-Side Switch

Telecom POL Converter

Use Scenario: 48 V input to 1.2 V/200 A output in AI accelerator card VRM.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter operating at 1 MHz.

Use Value: 3.8 mΩ R_DS(on) limits conduction loss to 15.2 W per phase, enabling 95.2% efficiency at full load.

Use Scenario: 12 V intermediate bus to 3.3 V/60 A supply for baseband processing units.

IC Role / Device Role / Timing Role: Low-side switch in dual-phase interleaved buck with integrated controller.

Use Value: 67 nC Q_g allows clean 10 ns gate rise/fall times using 2 A drivers, reducing switching loss by 22% vs. legacy MOSFETs.

Industrial Motor Drive Inverter

EV On-Board Charger PFC Stage

Use Scenario: 24 V DC link in servo drive half-bridge for 500 W BLDC motor control.

IC Role / Device Role / Timing Role: Low-side switch in 20 kHz PWM inverter stage with active freewheeling.

Use Value: 0.9 K/W R_thJC permits 45 W dissipation with 2-layer PCB copper, eliminating heatsink requirement.

Use Scenario: 400 V boost PFC switch in 3.3 kW OBC with 65 kHz switching frequency.

IC Role / Device Role / Timing Role: Fast-switching MOSFET in continuous conduction mode (CCM) boost stage.

Use Value: 420 mJ E_AS withstands line surge events without failure, meeting IEC 61000-4-5 Level 3 requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 4.2 mΩ @ 10 V; Q_g = 58 nC; R_thJC = 1.1 K/W	Lower gate charge but higher on-resistance and thermal resistance - suitable only for <100 A continuous loads.	Select when gate drive strength is limited and thermal margin exceeds 15 °C/W.
STL220N4F7AG	R_DS(on) = 3.5 mΩ @ 10 V; Q_g = 82 nC; R_thJC = 0.85 K/W; no avalanche rating specified	Better conduction loss and thermal performance, but lacks validated E_AS - requires external clamping in inductive switching.	Select for conduction-limited, low-frequency (<200 kHz) applications where avalanche stress is absent.

Compared with IRLHS6342TRPBF and STL220N4F7AG, IPD038N04NGBTMA1 delivers the best balance of low R_DS(on), controlled Q_g, and guaranteed avalanche ruggedness-making it preferred for high-reliability, high-frequency server and telecom power stages.

Availability

IPD038N04NGBTMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, industrial motor drives, and EV on-board chargers requiring stable component supply and long-term production continuity.

Supply support for IPD038N04NGBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

This part belongs to the OptiMOS™ 5 product line, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, telecom, and industrial power systems where low R_DS(on), fast switching, and thermal robustness are mandatory.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C. For reliable long-term operation, derating is required above 125 °C ambient; thermal design must ensure T_J ≤ 150 °C under worst-case load and airflow conditions per JEDEC JESD51-2 standards.

Does IPD038N04NGBTMA1 support gate drive voltages below 4.5 V?

Yes - its V_GS(th) range is 1.7–2.5 V, and R_DS(on) is characterized down to 4.5 V. At V_GS = 4.5 V, R_DS(on) ≤ 5.2 mΩ, making it compatible with 3.3 V logic-level controllers in space-constrained designs.

Is the exposed drain pad electrically isolated from other pins?

No - the exposed pad (Pin 8) is internally connected to the drain terminal and must be soldered to a PCB copper area tied to the drain net. It is not insulated and must never be connected to ground or source potential.

What is the recommended PCB layout for thermal performance?

A minimum 200 mm² thermal pad area on inner or outer layers, connected via ≥8 thermal vias (0.3 mm diameter, 0.8 mm pitch) to internal ground or drain planes, is required to achieve the specified 0.9 K/W R_thJC. Avoid solder mask over the pad to ensure full copper contact.

IPD038N04NGBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 4V @ 45µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4500 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD038N04NGBTMA1 FAQ

1.How can I place an order for IPD038N04NGBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD038N04NGBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD038N04NGBTMA1 reliable?

The price and inventory of IPD038N04NGBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD038N04NGBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD038N04NGBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD038N04NGBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD038N04NGBTMA1?

IPD038N04NGBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD038N04NGBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD038N04NGBTMA1?

For technical support, including IPD038N04NGBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD038N04NGBTMA1 requirements.

6.How does Aetrix verify that IPD038N04NGBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD038N04NGBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD038N04NGBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD038N04NGBTMA1?

All IPD038N04NGBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD038N04NGBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD038N04NGBTMA1 part is unused and in its original packaging.

Return procedure for IPD038N04NGBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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