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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD03N03LA G

Name: IPD03N03LA G
Brand: Infineon Technologies
SKU: IPD03N03LA G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD03N03LA G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD03N03LA G.pdf

Description:: MOSFET N-CH 25V 90A TO252-3

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Product details

Overview

IPD03N03LA G from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO252-3-11 package, rated for 25 V V_DS, 3.2 mΩ R_DS(on) (max, SMD version), 90 A continuous drain current at T_C = 25 °C, and 175 °C maximum junction temperature - optimized for high-frequency DC/DC converters in server VRMs and POL modules.

For engineers reviewing the IPD03N03LA G datasheet, IPD03N03LA G pinout, IPD03N03LA G application, or IPD03N03LA G equivalent, key selection criteria include gate charge (Q_g = 31–41 nC), low R_DS(on) × Q_g figure-of-merit, thermal resistance (R_thJC = 1.3 K/W), reverse diode performance (V_SD = 0.92–1.2 V @ 90 A), and JEDEC-qualified reliability for industrial power stages.

Technical Context

This device employs a trench-gate silicon process with optimized cell pitch and source/drain doping to achieve low on-resistance while maintaining fast switching (t_r = 10–15 ns, t_f = 6.6–10 ns) and robust avalanche capability (E_AS = 300 mJ). Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting.

The integrated body diode features low forward voltage and controlled reverse recovery (Q_rr = 20 nC max), supporting synchronous rectification in buck converters. Thermal design leverages low R_thJC and compatibility with standard FR4 PCBs having ≥6 cm² copper area for drain connection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - supports 12 V input bus systems with margin for transients and ripple
R_DS(on) max (SMD)	3.2 mΩ - enables <1.5 W conduction loss at 90 A, critical for high-current POL stages
I_D continuous	90 A @ T_C = 25 °C - validated for sustained operation in thermally constrained board layouts
Q_g	31–41 nC - balances switching speed and gate driver power requirements in MHz-range converters
R_thJC	1.3 K/W - allows efficient heat transfer to heatsink or copper plane, enabling compact thermal design
V_GS(th)	1.2–2.0 V - ensures reliable turn-on with 3.3 V microcontrollers or PWM ICs without external bias
E_AS	300 mJ - withstands single-pulse inductive energy during hard-switching or fault events

Pinout & Package

IPD03N03LA G uses the PG-TO252-3-11 (D-Pak) surface-mount package with exposed drain pad for thermal and electrical performance. The three terminals are arranged in standard TO252 footprint: Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain (tab).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives logic-level gate drive; low input capacitance (C_iss = 3900–5200 pF) minimizes driver loading
Pin 2 (Source)	Reference node for gate drive and current return	Common reference for controller feedback and current sensing; low-inductance layout essential for stability
Pin 3 (Drain / Tab)	Main power output terminal	Exposed copper tab connects directly to PCB drain copper pour for thermal dissipation and low parasitic inductance

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Operates fully enhanced at V_GS ≥ 4.5 V, eliminating need for gate boosters in 3.3 V control architectures
Low R_DS(on) × Q_g figure-of-merit	~12.5 mΩ·nC - optimizes trade-off between conduction and switching losses in high-frequency (>500 kHz) converters
JEDEC-qualified reliability	Qualified per J-STD-20 and JESD22 - validated for reflow, humidity, and temperature cycling in industrial applications
175 °C maximum junction temperature	Enables operation in high-ambient environments (e.g., telecom base stations, industrial PLCs) without derating
Integrated robust body diode	V_SD ≤ 1.2 V @ 90 A and Q_rr ≤ 20 nC - reduces reverse recovery loss and EMI in synchronous rectifier configurations

Applications

Server Point-of-Load Converter

Industrial Motor Drive Half-Bridge

Use Scenario: High-current, high-efficiency 12 V-to-1 V conversion for CPU/GPU VRMs in data center servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in multiphase buck converter topology.

Use Value: 3.2 mΩ R_DS(on) and 31–41 nC Q_g enable >95% efficiency at 60–90 A load with minimal thermal rise on standard PCBs.

Use Scenario: Half-bridge leg in 24 V BLDC motor drives for factory automation actuators.

IC Role / Device Role / Timing Role: High-current, fast-switching power switch in inverter stage with integrated freewheeling path.

Use Value: 175 °C T_j,max and 300 mJ E_AS ensure robustness against inductive kickback and overloads in closed-loop motor control.

Telecom DC/DC Module

Automotive Body Control Unit

Use Scenario: Compact 48 V-to-12 V intermediate bus converter in 5G remote radio units.

IC Role / Device Role / Timing Role: Primary switch in high-frequency (1–2 MHz) isolated or non-isolated buck converter.

Use Value: Low C_oss (1500–2000 pF) and fast t_f (6.6–10 ns) reduce switching loss and improve light-load efficiency.

Use Scenario: High-side load switch for 12 V power distribution in automotive BCMs with strict thermal constraints.

IC Role / Device Role / Timing Role: Logic-level controlled power switch managing solenoid, lamp, or fan loads.

Use Value: V_GS(th) = 1.2–2.0 V ensures full enhancement from automotive MCU GPIOs; Pb-free RoHS compliance meets automotive ELV directive.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 3.0 mΩ (typ), Q_g = 42 nC, R_thJC = 1.5 K/W, TO-220AB package	Through-hole mounting; higher thermal resistance limits high-density PCB use	Preferred where mechanical robustness and heatsink mounting outweigh surface-mount density needs
BSC030N03LS	R_DS(on) = 2.7 mΩ (typ), Q_g = 34 nC, PG-TSDSON-8 package, 150 °C T_j,max	Smaller footprint but lower max junction temperature; no JEDEC qualification for industrial reflow	Selected when ultra-low R_DS(on) is prioritized and ambient temperature remains <125 °C

Compared with IRL3803PbF and BSC030N03LS, IPD03N03LA G uniquely combines JEDEC qualification, 175 °C rating, and TO252 thermal performance-making it optimal for mission-critical, high-reliability industrial and telecom power stages where long-term thermal stability and process consistency are mandatory.

Availability

IPD03N03LA G is available at Aetrix Electronics and suitable for server point-of-load converters, industrial motor drive half-bridges, and telecom DC/DC modules requiring stable component supply across multi-year production cycles.

Supply support for IPD03N03LA G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The OptiMOS®2 product line delivers logic-level, low-R_DS(on) power MOSFETs engineered for high-efficiency, high-frequency DC/DC conversion in computing, telecom, and industrial power supplies - emphasizing thermal robustness and JEDEC-compliant manufacturability.

FAQ

What is the maximum allowable gate-source voltage for IPD03N03LA G?

The absolute maximum gate-source voltage is ±20 V, with a recommended operating range of –5 V to +15 V under pulsed conditions (duty cycle < 0.25) and up to +20 V for DC operation. Exceeding ±20 V risks permanent gate oxide damage, especially at elevated temperatures above 150 °C.

Can IPD03N03LA G be used as a high-side switch with standard 5 V logic?

Yes - its logic-level V_GS(th) (1.2–2.0 V) and guaranteed R_DS(on) at V_GS = 4.5 V make it compatible with 5 V microcontrollers and gate drivers. However, high-side configuration requires a floating gate driver capable of delivering ≥4.5 V referenced to the source node, not just 5 V referenced to ground.

How does the SMD version differ electrically from the through-hole variant?

The SMD version (PG-TO252-3-11) exhibits lower R_DS(on) (2.7–3.2 mΩ vs. 2.9–3.4 mΩ at V_GS = 10 V) due to optimized die attach and reduced bondwire inductance. It also achieves better thermal resistance (R_thJC = 1.3 K/W) versus through-hole packages, enabling higher current density on PCBs with adequate copper area.

Is IPD03N03LA G suitable for avalanche-rated applications like inductive load switching?

Yes - it is characterized for single-pulse avalanche energy (E_AS = 300 mJ at I_D = 90 A, R_GS = 25 Ω) and rated for repetitive unclamped inductive switching per JEDEC standards. Designers must verify layout parasitics and gate drive strength to avoid secondary breakdown during avalanche events.

IPD03N03LA G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.2mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 2V @ 70µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5200 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD03N03LA G FAQ

1.How can I place an order for IPD03N03LA G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD03N03LA G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD03N03LA G reliable?

The price and inventory of IPD03N03LA G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD03N03LA G is usually 5 days.

3.What payment methods are accepted for IPD03N03LA G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD03N03LA G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD03N03LA G?

IPD03N03LA G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD03N03LA G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD03N03LA G?

For technical support, including IPD03N03LA G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD03N03LA G requirements.

6.How does Aetrix verify that IPD03N03LA G is sourced from the original manufacturer or authorized distributors?

All IPD03N03LA G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD03N03LA G meets industry standards.

7.What is the process for return or replacement of IPD03N03LA G?

All IPD03N03LA G units undergo pre-shipment inspection (PSI). If there is an issue with IPD03N03LA G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD03N03LA G part is unused and in its original packaging.

Return procedure for IPD03N03LA G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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