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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD040N03LF2SATMA1

Name: IPD040N03LF2SATMA1
Brand: Infineon Technologies
SKU: IPD040N03LF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD040N03LF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD040N03LF2SATMA1.pdf

Description:: IPD040N03LF2SATMA1

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Product details

Overview

IPD040N03LF2SATMA1 from Infineon is a 30 V, 73 A N-channel logic-level MOSFET in PG-TO252-3 package, featuring 4.05 mΩ R_DS(on) at V_GS = 10 V, 100% avalanche tested, and rated for 175 °C operation. It delivers high current density and low switching losses for DC-DC converters, motor drives, and e-fuse applications.

For engineers reviewing the IPD040N03LF2SATMA1 datasheet, IPD040N03LF2SATMA1 pinout, IPD040N03LF2SATMA1 application, or IPD040N03LF2SATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V, Q_g (21 nC), thermal resistance (R_thJC = 2.0 °C/W), and avalanche energy rating (86 mJ).

Technical Context

This StrongIRFET™ 2 device uses trench-gate superjunction technology optimized for low R_DS(on) and fast switching with logic-level gate drive compatibility (V_GS(th) = 1.35–2.35 V). Its 175 °C junction rating enables operation in thermally constrained environments without derating.

Dynamic parameters include t_d(on) = 13 ns, t_r = 11 ns, Q_gs = 6.1 nC, and Q_gd = 4.1 nC at V_GS = 0–4.5 V, supporting high-frequency synchronous rectification and PWM control up to 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V rail systems with margin
R_DS(on) max	4.05 mΩ at V_GS = 10 V, I_D = 40 A - Enables <1.6 W conduction loss at 73 A
I_D continuous	73 A at T_C = 25 °C - Supports high-current load switching with minimal heatsinking
Q_g total	21 nC at V_GS = 0–4.5 V - Low gate charge reduces driver power and EMI in high-speed switching
E_AS	86 mJ - Withstands single-pulse inductive energy in motor and solenoid drive circuits
R_thJC	2.0 °C/W - Enables efficient heat transfer to PCB copper pad for compact thermal design
V_GS(th)	1.35–2.35 V - Fully enhanced by standard 3.3 V or 5 V logic outputs without level-shifting

Pinout & Package

PG-TO252-3 (DPAK) package with exposed drain tab for thermal and electrical connection; surface-mount, single-row 3-pin layout.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives logic-level voltage to modulate channel conductivity; low C_iss (1800 pF) minimizes drive burden
Pin 2 + Tab (Drain)	High-side power output	Exposed metal tab provides low-inductance, low-thermal-resistance path to PCB ground plane or heatsink
Pin 3 (Source)	Reference return	Serves as common reference for gate drive and current sensing; ties to system source node or shunt resistor

Key Features

Feature	Design Value
N-channel logic-level enhancement mode	Operates fully with 3.3 V or 5 V microcontroller GPIOs-no external level shifter required
100% avalanche tested	Guarantees ruggedness against inductive kickback in motor and relay driving without external snubbers
175 °C maximum junction temperature	Supports operation in sealed enclosures or high-ambient industrial environments without thermal throttling
Pb-free, RoHS & halogen-free	Complies with IEC61249-2-21 and global environmental directives for automotive and industrial end equipment

Applications

Brushless DC Motor Control

48 V DC-DC Buck Converter

Use Scenario: High-efficiency 3-phase inverter stage for BLDC fans and pumps in HVAC and appliance systems.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge configuration, synchronized with complementary high-side FET.

Use Value: 4.05 mΩ R_DS(on) and 21 nC Q_g reduce conduction and switching losses, enabling >97% efficiency at 20 kHz PWM.

Use Scenario: Primary synchronous rectifier in isolated 48 V-to-12 V telecom and server power supplies.

IC Role / Device Role / Timing Role: Secondary-side power switch operating in forced continuous conduction mode (FCCM) with precise gate timing.

Use Value: Fast t_f = 7.2 ns and low Q_gd/Q_gs ratio minimize shoot-through risk and improve light-load regulation.

Automotive Body Control Module

e-Fuse Protection Circuit

Use Scenario: Load switch for headlight, seat heater, or window lift actuation in 12 V/24 V vehicle subsystems.

IC Role / Device Role / Timing Role: High-current protected switch with integrated overcurrent and thermal shutdown coordination via MCU.

Use Value: 73 A continuous rating and 175 °C T_j(max) allow sustained operation under peak battery loads and engine-bay ambient conditions.

Use Scenario: Solid-state replacement for mechanical fuses in battery management and power distribution units.

IC Role / Device Role / Timing Role: Current-controlled electronic fuse with fast fault response (<100 ns overcurrent detection latency).

Use Value: 86 mJ single-pulse avalanche energy ensures safe interruption of short-circuit currents without catastrophic failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB040N03LGATMA1	Same R_DS(on) (4.05 mΩ), but in PG-TO263-3 (D2PAK); higher I_D = 100 A; R_thJC = 1.4 °C/W	Better thermal performance for >100 W dissipation; requires larger PCB footprint	Select when board space allows and thermal margin is critical over cost or size
IRLHS6342TRPBF	R_DS(on) = 4.5 mΩ at 4.5 V; Q_g = 24 nC; TO-252 package; lower avalanche rating (E_AS = 42 mJ)	Higher gate charge increases driver loss; reduced ruggedness limits use in inductive loads	Acceptable only in low-energy, non-avalanche-critical applications like LED drivers

Compared with IPB040N03LGATMA1 and IRLHS6342TRPBF, IPD040N03LF2SATMA1 offers optimal balance of low R_DS(on), robust avalanche capability, and compact DPAK packaging-ideal for space-constrained, high-reliability 24–48 V power stages.

Availability

IPD040N03LF2SATMA1 is available at Aetrix Electronics and suitable for brushless DC motor control, 48 V DC-DC buck converters, and automotive body control modules requiring stable component supply and long-term lifecycle support.

Supply support for IPD040N03LF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.

This part belongs to the StrongIRFET™ 2 family-engineered for high-current, high-efficiency power switching in automotive, industrial, and computing power supplies where logic-level drive and thermal resilience are essential.

FAQ

What is the maximum allowable gate-source voltage for IPD040N03LF2SATMA1?

The absolute maximum V_GS is ±20 V per datasheet Table 2. Operation beyond ±12 V risks gate oxide damage. For reliable logic-level drive, keep V_GS between 4.5 V and 10 V to ensure full enhancement while avoiding unnecessary stress on the gate dielectric.

Can IPD040N03LF2SATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (see Figure 6) enables inherent current sharing. Use matched gate resistors (≤1 Ω), symmetrical PCB layout, and shared thermal mass to ensure balanced conduction. Derate total current by 15% for two devices in parallel per Infineon application note AN2015-07.

Is the drain tab electrically isolated from the PCB mounting pad?

No-the drain tab is internally connected to Pin 2 and must be soldered directly to a large copper pour serving as both thermal sink and circuit node. Electrical isolation requires insulating thermal pads or ceramic substrates, which increase R_thJC by ≥1.5 °C/W and are not recommended unless mandated by safety standards.

Does IPD040N03LF2SATMA1 have an integrated body diode suitable for synchronous rectification?

Yes-the intrinsic body diode has V_SD = 0.86–1.0 V at 40 A and t_rr = 16 ns, making it suitable for synchronous rectification in buck and flyback topologies. However, its Q_rr = 39 nC necessitates careful dead-time optimization to avoid cross-conduction losses.

IPD040N03LF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™ 2

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta), 73A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.05mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 30µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 75W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-34

IPD040N03LF2SATMA1 FAQ

1.How can I place an order for IPD040N03LF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD040N03LF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD040N03LF2SATMA1 reliable?

The price and inventory of IPD040N03LF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD040N03LF2SATMA1 is usually 5 days.

3.What payment methods are accepted for IPD040N03LF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD040N03LF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD040N03LF2SATMA1?

IPD040N03LF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD040N03LF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD040N03LF2SATMA1?

For technical support, including IPD040N03LF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD040N03LF2SATMA1 requirements.

6.How does Aetrix verify that IPD040N03LF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD040N03LF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD040N03LF2SATMA1 meets industry standards.

7.What is the process for return or replacement of IPD040N03LF2SATMA1?

All IPD040N03LF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD040N03LF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD040N03LF2SATMA1 part is unused and in its original packaging.

Return procedure for IPD040N03LF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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