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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD040N03LGBTMA1

Name: IPD040N03LGBTMA1
Brand: Infineon Technologies
SKU: IPD040N03LGBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD040N03LGBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD040N03LGBTMA1.pdf

Description:: MOSFET N-CH 30V 90A TO252-31

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Product details

Overview

IPD040N03LGBTMA1 from Infineon Technologies is an N-channel logic-level OptiMOS®3 power MOSFET in PG-TO252-3-11 package, rated for 30 V V_DS, 4.0 mΩ R_DS(on) at V_GS = 10 V, and 90 A continuous drain current at T_C = 25 °C. It is avalanche-rated, RoHS-compliant, and optimized for high-efficiency DC/DC converters and synchronous rectification in SMPS.

For engineers reviewing the IPD040N03LGBTMA1 datasheet, IPD040N03LGBTMA1 pinout, IPD040N03LGBTMA1 application, or IPD040N03LGBTMA1 equivalent, key selection criteria include its low gate charge × R_DS(on) figure of merit (FOM), fast switching performance (t_r = 6.8 ns, t_f = 4.2 ns), and robust 60 mJ single-pulse avalanche energy rating under defined test conditions.

Technical Context

This MOSFET employs Infineon's OptiMOS®3 silicon technology to minimize conduction and switching losses simultaneously. Its logic-level gate drive (V_GS(th) = 1–2.2 V) enables direct interfacing with 3.3 V and 5 V controllers, while the low R_DS(on) and optimized C_iss/C_oss/C_rss values (2900–3900 pF / 1100–1500 pF / 60 pF) support high-frequency operation up to several hundred kHz in hard-switched topologies.

The device integrates a robust body diode with 66 A continuous forward current capability and low V_SD (0.83–1.1 V at I_F = 30 A, T_j = 25 °C), making it suitable for synchronous buck stages and reverse polarity protection where diode recovery Q_rr (≤20 nC) and softness are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	30 V - Supports 24 V input rail systems with margin for transient spikes.
R_DS(on) max	4.0 mΩ at V_GS = 10 V - Enables <1.5 W conduction loss at 60 A, reducing heatsink requirements.
I_D Continuous	90 A at T_C = 25 °C - Delivers high current density in compact SMD footprint with thermal resistance R_thJC = 1.9 K/W.
Q_g Total	18–24 nC - Low gate charge reduces driver power and enables efficient 500 kHz+ switching in LLC or phase-shifted full-bridge.
E_AS	60 mJ - Withstands single-pulse inductive energy without failure, enhancing system reliability in uncontrolled turn-off events.
V_GS(th)	1–2.2 V - Ensures full enhancement with standard logic-level microcontrollers and PWM ICs without level-shifting.
Q_rr	≤20 nC - Minimizes diode recovery loss and EMI in synchronous rectifier applications.

Pinout & Package

IPD040N03LGBTMA1 is housed in a PG-TO252-3-11 (D-Pak) thermally enhanced surface-mount package with exposed drain tab for PCB heat sinking. The package complies with JEDEC MO-238 and supports 75 K/W junction-to-ambient thermal resistance on minimal footprint (6 cm² copper area).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or common source bus; carries full load current.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate; requires low-inductance routing and gate resistor (R_G = 1.5 Ω typical) for controlled dv/dt.
Pin 3 (Drain)	Power output (D)	Exposed metal tab - electrically connected to drain; must be soldered to large copper pour for thermal and current path integrity.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced from 4.5 V supply - eliminates need for gate drivers in low-voltage control circuits.
Low FOM (Q_g × R_DS(on))	~85 nC·mΩ - balances switching speed and conduction loss for peak efficiency in 300–1000 kHz DC/DC designs.
Avalanche-rated	Rated for repetitive single-pulse avalanche (I_AS = 90 A, E_AS = 60 mJ) - improves ruggedness in inductive load switching.
Optimized body diode	Q_rr ≤20 nC and soft recovery - reduces voltage overshoot and EMI in synchronous rectification.
Pb-free & RoHS	Meets JESD22-A110 and J-STD-020 - qualified for lead-free reflow and industrial temperature cycling.

Applications

Server VRM

USB-C PD Adapter

Use Scenario: High-current, multi-phase 12 V → 1.8 V conversion for CPU/GPU core rails.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in high-side or low-side position; switched at 500–800 kHz.

Use Value: 4.0 mΩ R_DS(on) and 24 nC Q_g enable >95% efficiency at 60 A per phase with minimal thermal derating.

Use Scenario: Secondary-side synchronous rectification in 65 W USB-C Power Delivery adapters.

IC Role / Device Role / Timing Role: Low-voltage, high-current switch replacing Schottky diode in flyback or active-clamp forward topology.

Use Value: 0.83 V V_SD and 20 nC Q_rr reduce conduction loss by >40% vs. 40 V Schottky, improving no-load and light-load efficiency.

Industrial PLC I/O Module

Automotive Body Control Unit

Use Scenario: Solid-state load switching for 24 V solenoid, relay, and LED driver outputs.

IC Role / Device Role / Timing Role: High-side or low-side power switch with integrated overcurrent and thermal protection interface.

Use Value: Avalanche rating and 90 A pulsed current support safe interruption of inductive loads without snubbers.

Use Scenario: Reverse polarity protection and power distribution in 12 V automotive subsystems.

IC Role / Device Role / Timing Role: Low-R_DS(on) pass element in ideal diode configuration with external controller.

Use Value: 4.0 mΩ on-resistance limits voltage drop to <0.5 V at 125 A, meeting ISO 16750-2 cold-crank requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PBF	R_DS(on) = 6.0 mΩ @ 10 V; higher Q_g (32 nC); TO-220 package	Larger footprint, higher thermal resistance (R_thJC = 3.0 K/W), less suited for high-density SMD layouts	Prefer when through-hole mounting or legacy board compatibility required
SUD09N10-60-E3	R_DS(on) = 6.0 mΩ @ 10 V; V_DS = 100 V; SO-8 package	Higher voltage rating but lower current capability (I_D = 9 A); unsuitable for >30 A continuous use	Select only for low-current, high-voltage margin applications where space is constrained

Compared with IRL3803PBF and SUD09N10-60-E3, IPD040N03LGBTMA1 delivers superior current density (90 A in D-Pak), lowest R_DS(on), and best FOM for high-efficiency, high-frequency 24–30 V DC/DC systems - making it the optimal choice where thermal and layout constraints dominate.

Availability

IPD040N03LGBTMA1 is available at Aetrix Electronics and suitable for server VRMs, USB-C PD adapters, industrial PLC I/O modules, and automotive body control units requiring stable component supply and long-term production continuity.

Supply support for IPD040N03LGBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control solutions, with leadership in silicon and wide-bandgap devices.

This part belongs to the OptiMOS®3 product line, engineered specifically for high-efficiency, high-current DC/DC conversion in server, telecom, and industrial power supplies where low R_DS(on) and fast switching are critical.

FAQ

Is IPD040N03LGBTMA1 suitable for synchronous rectification in a 30 V input flyback converter?

Yes. With its 30 V V_DS rating, 4.0 mΩ R_DS(on), and low Q_rr (≤20 nC), it is explicitly designed for secondary-side synchronous rectification in 24 V–30 V output flyback and forward converters. Its logic-level gate ensures reliable turn-on with standard PWM controllers.

What is the maximum recommended PCB copper area for thermal performance in the PG-TO252-3-11 package?

The datasheet specifies optimal thermal performance with a 6 cm² (40 mm × 40 mm) single-layer 70 µm copper area connected to the drain tab on FR4 PCB. This achieves R_thJA = 50 K/W. Smaller footprints increase thermal resistance - e.g., minimal footprint yields R_thJA = 75 K/W.

Does IPD040N03LGBTMA1 require a gate resistor, and what value is recommended?

Yes. A gate resistor is required to control switching speed and suppress ringing. The datasheet recommends R_G = 1.6 Ω for standard 15 V drive with 30 A load. For 4.5 V logic-level drive, 1–2 Ω is typical. Values below 0.5 Ω risk excessive dv/dt and EMI; above 10 Ω significantly increases switching loss.

How does the avalanche rating impact system-level design?

The 60 mJ single-pulse avalanche energy rating allows the device to safely absorb inductive energy during unclamped inductive switching events - such as MOSFET short-circuit or transformer saturation - without immediate failure. This enables simplified protection circuitry and improves fault tolerance in motor drives and high-current switching nodes.

IPD040N03LGBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3900 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD040N03LGBTMA1 FAQ

1.How can I place an order for IPD040N03LGBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD040N03LGBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD040N03LGBTMA1 reliable?

The price and inventory of IPD040N03LGBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD040N03LGBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD040N03LGBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD040N03LGBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD040N03LGBTMA1?

IPD040N03LGBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD040N03LGBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD040N03LGBTMA1?

For technical support, including IPD040N03LGBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD040N03LGBTMA1 requirements.

6.How does Aetrix verify that IPD040N03LGBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD040N03LGBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD040N03LGBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD040N03LGBTMA1?

All IPD040N03LGBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD040N03LGBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD040N03LGBTMA1 part is unused and in its original packaging.

Return procedure for IPD040N03LGBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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